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1. 发明授权

US07488936B2 TFT array inspecting apparatus 失效
标题翻译： TFT阵列检查装置
公开(公告)号：US07488936B2
公开(公告)日：2009-02-10
申请号：US11188719
申请日：2005-07-26
申请人： Ho Seok Choi , Vasily Lenyashine , Hyeong Min Ahn , Jeong Su Ha , Sergey Antonov , Mi Jeong Song
发明人： Ho Seok Choi , Vasily Lenyashine , Hyeong Min Ahn , Jeong Su Ha , Sergey Antonov , Mi Jeong Song
IPC分类号： G21K7/00
CPC分类号： H01J37/20 , H01J37/28 , H01J2237/20207 , H01J2237/2817
摘要： A TFT array inspecting apparatus inspects a TFT array disposed at either an inclined position and a level position. The TFT array inspecting apparatus includes a vacuum chamber, a stage disposed in the vacuum chamber so that a TFT array to be inspected is disposed on the stage, an electron gun disposed opposite to the stage in the vacuum chamber to generate an electron beam onto the TFT array, an electron detecting unit to detect secondary electrons emitted from the TFT array by the electron gun, and at least one elevating unit to move the TFT array move between a level position and an inclined position having a designated angle with the level position.
摘要翻译： TFT阵列检查装置检查设置在倾斜位置和水平位置的TFT阵列。 TFT阵列检查装置包括真空室，设置在真空室中的台，使得待检查的TFT阵列设置在台架上，电子枪与真空室中的台相对设置，以产生电子束 TFT阵列，用于检测由电子枪从TFT阵列发射的二次电子的电子检测单元，以及用于移动TFT阵列的至少一个升降单元在与位置之间具有指定角度的水平位置和倾斜位置之间移动。

2. 发明授权

US07362123B2 Inspection apparatus for thin film transistor substrate 失效
标题翻译：薄膜晶体管基板检测装置
公开(公告)号：US07362123B2
公开(公告)日：2008-04-22
申请号：US11328177
申请日：2006-01-10
申请人： Ho-seok Choi , Sergey Antonov , Hyeong-min Ahn , Jeong-su Ha , Lemjachine Vassili , Mi-jeong Song
发明人： Ho-seok Choi , Sergey Antonov , Hyeong-min Ahn , Jeong-su Ha , Lemjachine Vassili , Mi-jeong Song
IPC分类号： G01R31/26 , G01R31/302
CPC分类号： G01N23/00 , G01R31/307 , G09G3/006 , Y10S345/904
摘要： An inspection apparatus for a TFT substrate formed with a plurality of pixels, includes a reference substrate being opposite to and spaced from the TFT substrate and formed with a plurality of reference patterns corresponding to the pixels, a power supply to supply power to both a predetermined number of the pixels and the corresponding reference pattern to form an electric field in a space between the TFT substrate and the reference substrate, an electron beam emitter to emit an electron beam to travel from a first side to a second side of the space, an electron beam detector to detect the electron beam emitted from the electron beam emitter and passed through the space, and a controller to determine whether the TFT substrate includes a defective pixel based on a location of the electron beam detected by the electron beam detector. Thus, the inspection apparatus can correctly and quickly inspect the TFT substrate for defects in a low vacuum state regardless a size of the TFT substrate.
摘要翻译：一种用于形成有多个像素的TFT基板的检查装置，包括与TFT基板相对并且与TFT基板隔开的基准基板，并且形成有与像素对应的多个基准图案，供给两个预定的像素数和相应的参考图案，以在TFT基板和参考基板之间的空间中形成电场，发射电子束从空间的第一侧移动到第二侧的电子束发射器，电子束检测器，用于检测从电子束发射器发射并通过空间的电子束，以及控制器，用于基于由电子束检测器检测到的电子束的位置来确定TFT基板是否包括缺陷像素。因此，与TFT基板的尺寸无关地，检查装置可以正确且快速地检查TFT基板中的低真空状态的缺陷。

3. 发明申请

US20060186335A1 Inspection apparatus for thin film transistor substrate 失效
标题翻译：薄膜晶体管基板检测装置
公开(公告)号：US20060186335A1
公开(公告)日：2006-08-24
申请号：US11328177
申请日：2006-01-10
申请人： Ho-seok Choi , Sergey Antonov , Hyeong-min Ahn , Jeong-su Ha , Lemiachine Vassili , Mi-jeong Song
发明人： Ho-seok Choi , Sergey Antonov , Hyeong-min Ahn , Jeong-su Ha , Lemiachine Vassili , Mi-jeong Song
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： G01N23/00 , G01R31/307 , G09G3/006 , Y10S345/904
摘要： An inspection apparatus for a TFT substrate formed with a plurality of pixels, includes a reference substrate being opposite to and spaced from the TFT substrate and formed with a plurality of reference patterns corresponding to the pixels, a power supply to supply power to both a predetermined number of the pixels and the corresponding reference pattern to form an electric field in a space between the TFT substrate and the reference substrate, an electron beam emitter to emit an electron beam to travel from a first side to a second side of the space, an electron beam detector to detect the electron beam emitted from the electron beam emitter and passed through the space, and a controller to determine whether the TFT substrate includes a defective pixel based on a location of the electron beam detected by the electron beam detector. Thus, the inspection apparatus can correctly and quickly inspect the TFT substrate for defects in a low vacuum state regardless a size of the TFT substrate.
摘要翻译：一种用于形成有多个像素的TFT基板的检查装置，包括与TFT基板相对并且与TFT基板隔开的基准基板，并且形成有与像素对应的多个基准图案，供给两个预定的像素数和相应的参考图案，以在TFT基板和参考基板之间的空间中形成电场，发射电子束从空间的第一侧移动到第二侧的电子束发射器，电子束检测器，用于检测从电子束发射器发射并通过空间的电子束，以及控制器，用于基于由电子束检测器检测到的电子束的位置来确定TFT基板是否包括缺陷像素。因此，与TFT基板的尺寸无关地，检查装置可以正确且快速地检查TFT基板中的低真空状态的缺陷。

4. 发明申请

US20060163475A1 TFT array inspecting apparatus 失效
公开(公告)号：US20060163475A1
公开(公告)日：2006-07-27
申请号：US11188719
申请日：2005-07-26
申请人： Ho Choi , Vasily Lenyashine , Hyeong Ahn , Jeong Ha , Sergey Antonov , Mi Song
发明人： Ho Choi , Vasily Lenyashine , Hyeong Ahn , Jeong Ha , Sergey Antonov , Mi Song
IPC分类号： G21K7/00
CPC分类号： H01J37/20 , H01J37/28 , H01J2237/20207 , H01J2237/2817
摘要： A TFT array inspecting apparatus inspects a TFT array disposed at either an inclined position and a level position. The TFT array inspecting apparatus includes a vacuum chamber, a stage disposed in the vacuum chamber so that a TFT array to be inspected is disposed on the stage, an electron gun disposed opposite to the stage in the vacuum chamber to generate an electron beam onto the TFT array, an electron detecting unit to detect secondary electrons emitted from the TFT array by the electron gun, and at least one elevating unit to move the TFT array move between a level position and an inclined position having a designated angle with the level position.

5. 发明申请

US20060180803A1 Phase change memory devices and fabrication methods thereof 有权
公开(公告)号：US20060180803A1
公开(公告)日：2006-08-17
申请号：US11336791
申请日：2006-01-23
申请人： Dong-Seok Suh , Yeon-Ho Khang , Vassill Leniachine , Mi-Jeong Song , Sergey Antonov
发明人： Dong-Seok Suh , Yeon-Ho Khang , Vassill Leniachine , Mi-Jeong Song , Sergey Antonov
IPC分类号： H01L29/04
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/16
摘要： In a memory device, at least one conductive contact having a width of less than, or equal to, about 30 nm may be formed on a first electrode. A dielectric layer may be formed on the sides of the at least one conductive contact, and a phase change material film may be formed on the conductive contact. A second electrode may be formed on the phase change material.

6. 发明申请

US20090039338A1 Phase change memory devices and fabrication methods thereof 审中-公开
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20090039338A1
公开(公告)日：2009-02-12
申请号：US12285523
申请日：2008-10-08
申请人： Dong-Seok Suh , Yeon-Ho Khang , VassIII Leniachine , Mi-Jeong Song , Sergey Antonov
发明人： Dong-Seok Suh , Yeon-Ho Khang , VassIII Leniachine , Mi-Jeong Song , Sergey Antonov
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/16
摘要： In a memory device, at least one conductive contact having a width of less than, or equal to, about 30 nm may be formed on a first electrode. A dielectric layer may be formed on the sides of the at least one conductive contact, and a phase change material film may be formed on the conductive contact. A second electrode may be formed on the phase change material.
摘要翻译：在存储器件中，可以在第一电极上形成具有小于或等于约30nm的宽度的至少一个导电接触。可以在至少一个导电接触的侧面上形成电介质层，并且可以在导电接触件上形成相变材料膜。可以在相变材料上形成第二电极。

7. 发明授权

US07449360B2 Phase change memory devices and fabrication methods thereof 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US07449360B2
公开(公告)日：2008-11-11
申请号：US11336791
申请日：2006-01-23
申请人： Dong-Seok Suh , Yeon-Ho Khang , Vassill Leniachine , Mi-Jeong Song , Sergey Antonov
发明人： Dong-Seok Suh , Yeon-Ho Khang , Vassill Leniachine , Mi-Jeong Song , Sergey Antonov
IPC分类号： H01L21/06
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/16
摘要： In a memory device, at least one conductive contact having a width of less than, or equal to, about 30 nm may be formed on a first electrode. A dielectric layer may be formed on the sides of the at least one conductive contact, and a phase change material film may be formed on the conductive contact. A second electrode may be formed on the phase change material.
摘要翻译：在存储器件中，可以在第一电极上形成具有小于或等于约30nm的宽度的至少一个导电接触。可以在至少一个导电接触的侧面上形成电介质层，并且可以在导电接触件上形成相变材料膜。可以在相变材料上形成第二电极。

8. 发明授权

US07804264B2 Commutation method and apparatus for a DC to AC inverter driving a three-phase asynchronous AC motor 有权
标题翻译：用于直流到交流变频器驱动三相异步交流电动机的换向方法和装置
公开(公告)号：US07804264B2
公开(公告)日：2010-09-28
申请号：US12025027
申请日：2008-02-02
申请人： Sergey Antonov , Alexei I Antonov
发明人： Sergey Antonov , Alexei I Antonov
IPC分类号： H02K23/00
CPC分类号： H02M7/53875 , H02M2007/53876
摘要： Present invention belongs to the field of inventers, motor controllers and pulse modulated waveform generation methods and circuits. More specifically it belongs to such methods and circuits utilizing fundamental vectors. This invention features better and more efficient fundamental vectors. The proposed method offers reduced losses, increased efficiency and longer life time of inverters and motor controllers. Better approximation of a three-phase voltage waveform approaching the ideal one is a significant advantage of the proposed method. Another advantage is an easy decomposition of any point of an ideal sinusoidal voltage waveform into the fundamental vectors. This invention is particularly useful for a vector control of asynchronous AC motors.
摘要翻译：本发明属于发明人，电机控制器和脉冲调制波形生成方法和电路领域。更具体地说，它属于利用基本向量的这种方法和电路。本发明具有更好和更有效的基本向量。所提出的方法可减少变频器和电机控制器的损耗，提高效率和延长使用寿命。接近理想的三相电压波形的更好的近似是所提出的方法的显着优点。另一个优点是将理想正弦波电压波形的任何一点容易地分解成基本矢量。本发明对异步交流电动机的矢量控制特别有用。

9. 发明授权

US07518194B2 Current amplifying integrated circuit 失效
标题翻译：电流放大集成电路
公开(公告)号：US07518194B2
公开(公告)日：2009-04-14
申请号：US11419493
申请日：2006-05-20
申请人： Sergey Antonov , Alexei I Antonov
发明人： Sergey Antonov , Alexei I Antonov
IPC分类号： H01L29/00 , H01L29/73
CPC分类号： H01L21/8249 , H01L27/0705 , H01L29/7393
摘要： Present invention proposes a dramatic improvement of CMOS IC technology by providing high speed bipolar current amplifiers compatible with CMOS technological process while retaining the footprint compatible to one of standard CMOS devices. This invention promises further increase of speed of ICs as well as a reduction of power dissipation.
摘要翻译：本发明通过提供兼容CMOS技术工艺的高速双极性电流放大器，同时保持与标准CMOS器件之一兼容的覆盖范围，提出了CMOS IC技术的显着改进。本发明可以进一步提高IC的速度以及降低功耗。

10. 发明申请

US20060196402A1 Wheel-controlled sails 失效
标题翻译：车轮控制帆
公开(公告)号：US20060196402A1
公开(公告)日：2006-09-07
申请号：US11306441
申请日：2005-12-28
申请人： Sergey Antonov , Alexei Antonov
发明人： Sergey Antonov , Alexei Antonov
IPC分类号： B63H9/04
CPC分类号： B63H9/06 , B63H9/04
摘要： The present invention simplifies sailing providing control of one or more sails with a wheel. The proposed system eliminates the need to control boom-footed sails separately, giving benefits of less gear and rig for short handed sailing. The wheel controlling the sails provides visible and obvious correlation between sails control action and achieved result, much like rudder control.
摘要翻译：本发明简化了航行，提供了一个或多个具有车轮的帆的控制。所提出的系统不需要单独控制悬臂脚踏风帆，从而减少短距离航行的齿轮和钻机的益处。控制风帆的轮子提供了风帆控制动作和实现结果之间可见和明显的相关性，很像舵控制。

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