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1. 发明授权

US5946085A Dielectric dispersion determining method in terahertz region using femtosecond ultrashort visible optical pulse 失效
标题翻译：使用飞秒超短可见光脉冲在太赫兹区域中的介电色散测定方法
公开(公告)号：US5946085A
公开(公告)日：1999-08-31
申请号：US37424
申请日：1998-03-10
申请人： Hitoshi Kawashima , Fumio Sasaki , Shunsuke Kobayashi , Toshiro Tani
发明人： Hitoshi Kawashima , Fumio Sasaki , Shunsuke Kobayashi , Toshiro Tani
IPC分类号： G01R27/26 , G01J1/00 , G01J11/00 , G01N21/41
CPC分类号： G01N21/41 , G01N21/3581
摘要： A dielectric dispersion determining method applying a transient grating method. The transient response of a sample is observed by the transient grating method using a femtosecond ultrashort visible optical pulse. A vibrational waveform b(t) is determined such that its square b(t).sup.2 replicates vibrational components observed in the transient response. The vibrational waveform b(t) is converted into b(.omega.) through the Fourier transform. The dielectric constant .epsilon.(.omega.) is obtained by substituting the converted value for b(.omega.)/.omega..sup.2 on the right-hand side of the following equation (1) derived from Maxwell's equations. The dielectric constant and/or refraction index can be directly obtained from the transient response to the femtosecond ultrashort visible optical pulse without passing through the dispersion relation which leaves some ambiguity in its definition. ##EQU1##
摘要翻译：一种应用瞬态光栅法的介质色散测定方法。通过使用飞秒超短可见光脉冲的瞬态光栅法观察样品的瞬态响应。确定振动波形b（t）使其平方b（t）2复制在瞬态响应中观察到的振动分量。通过傅里叶变换将振动波形b（t）转换为b（ω）。通过将从麦克斯韦方程导出的下式（1）的右侧的转换值代入b（ω）/ω2获得介电常数ε（ω）。介电常数和/或折射率可以直接从对飞秒超短可见光脉冲的瞬态响应获得，而不会通过在其定义中留下一些歧义的色散关系。

2. 发明授权

US6085966A Sputtering target assembly production method 失效
标题翻译：溅射靶组装生产方法
公开(公告)号：US6085966A
公开(公告)日：2000-07-11
申请号：US984130
申请日：1997-12-03
申请人： Hitoshi Shimomuki , Fumio Sasaki , Eiichi Shimizu
发明人： Hitoshi Shimomuki , Fumio Sasaki , Eiichi Shimizu
IPC分类号： B23K20/02 , B23K20/233 , C23C14/34 , H01L21/203 , B23K20/00 , B23K31/02 , B23K1/19 , C22F1/09
CPC分类号： B23K20/233 , B23K20/021 , C23C14/3407 , B23K2203/12
摘要： A method for producing a sputtering target assembly consisting of a target member used for sputtering and a backing plate bonded to the target member, which assembly has a high adherence strength and a high bonding strength as well as a sufficient tensile strength even under a high temperature. When producing a sputtering target assembly consisting of a target member used for sputtering and a backing plate bonded to the target member, bonding surfaces of the target member and the backing plate are made flat so as to have an arithmetic mean roughness Ra of 0.01 to 1.0 .mu.m before carrying out solid phase diffusion bonding between the target member and the backing plate.
摘要翻译：一种溅射靶组件的制造方法，该溅射靶组件由用于溅射的目标构件和与该靶构件结合的背板组成，该组件具有高的粘附强度和高的接合强度，并且即使在高温下也具有足够的拉伸强度。当制造由用于溅射的目标构件和结合到目标构件的背板组成的溅射靶组件时，目标构件和背板的接合表面被制成平坦的，以便具有0.01至1.0的算术平均粗糙度Ra 在目标构件和背板之间进行固相扩散接合之前。

3. 发明申请

US20080224253A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080224253A1
公开(公告)日：2008-09-18
申请号：US12046033
申请日：2008-03-11
申请人： Yoshitomo SAGAE , Fumio Sasaki , Ryoichi Ohara
发明人： Yoshitomo SAGAE , Fumio Sasaki , Ryoichi Ohara
IPC分类号： H01L23/58
CPC分类号： H01L27/1203 , H01L21/76264 , H01L21/823878 , H01L23/552 , H01L23/66 , H01L29/16 , H01L29/78603 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor device receiving as input a radio frequency signal having a frequency of 500 MHz or more and a power of 20 dBm or more is provided. The semiconductor device includes: a silicon substrate; a silicon oxide film formed on the silicon substrate; a radio frequency interconnect provided on the silicon oxide film and passing the radio frequency signal; a fixed potential interconnect provided on the silicon oxide film and placed at a fixed potential; and an acceptor-doped layer. The acceptor-doped layer is formed in a region of the silicon substrate. The region is in contact with the silicon oxide film. The acceptor-doped layer is doped with acceptors.
摘要翻译：作为输入接收具有500MHz以上的频率和20dBm以上的功率的射频信号的半导体装置。半导体器件包括：硅衬底; 形成在硅衬底上的氧化硅膜; 设置在氧化硅膜上并通过射频信号的射频互连; 设置在氧化硅膜上并以固定电位放置的固定电位互连; 和受主掺杂层。受主掺杂层形成在硅衬底的区域中。该区域与氧化硅膜接触。受主掺杂层掺杂有受体。

4. 发明申请

US20090159222A1 HOLDING MEMBER FOR WINDOW SCREEN 审中-公开
标题翻译：控制会员窗口窗口
公开(公告)号：US20090159222A1
公开(公告)日：2009-06-25
申请号：US12096391
申请日：2007-08-03
申请人： Masato Moriya , Fumio Sasaki
发明人： Masato Moriya , Fumio Sasaki
IPC分类号： E06B9/24
CPC分类号： E06B9/52 , E06B2009/527 , F16B5/0692
摘要： [Object] To provide a holding member for a net for a screen door effective for fixing a net for a screen door having fine filaments and a fine mesh compared with a known insect protection net to a frame body for use in a screen door.[Solving Means] A holding member 14 is constructed by providing a pair of elastically deformable leg ridges 16 being fitted into a latch groove 18 under a condition of being in pressure contact with an inward projecting edge 19 thereof, to a cover plate 15 for covering the latch groove 18. A soft pressure-contact portion 15a being in pressure contact with the net 12 sandwiched between the same and an outer surface 19a of the inward projecting edge 19 of the latch groove 18 is integrally formed at an outer side of the leg ridge 16 of the cover plate 15. In the pressure-contact portion 15a, an acute head-shaped projecting ridge 15b being elastically in pressure contact with the net sandwiched between the same and the outer surface of the inward projecting edge 19 of the latch groove 18 is projected and the projecting ridge has elasticity so as to be deformed by unevenness of the net surface.
摘要翻译：本发明提供一种用于筛网门的保持构件，其有效地固定具有细丝的筛网的网和与已知的防虫网相比较的细筛网到用于筛网门的框体。 [解决方案]保持构件14通过在与其向内突出的边缘19压力接触的状态下设置一对可弹性变形的腿脊16而构成，并将其嵌入到闩锁槽18中，以覆盖盖板15 闩锁槽18.与被夹在其间的网12压力接触的软压接部15a和闩锁槽18的向内突出的边缘19的外表面19a一体地形成在腿的外侧在压接部分15a中，与夹在其间的网与弹性槽的向内突出的边缘19的外表面弹性地压接的尖锐的头部形状的突出脊15b 18突出并且突出的脊具有弹性，以便由于网表面的不平坦而变形。

5. 发明申请

US20120146176A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20120146176A1
公开(公告)日：2012-06-14
申请号：US13399779
申请日：2012-02-17
申请人： Yoshitomo Sagae , Fumio Sasaki , Ryoichi Ohara
发明人： Yoshitomo Sagae , Fumio Sasaki , Ryoichi Ohara
IPC分类号： H01L23/58
CPC分类号： H01L27/1203 , H01L21/76264 , H01L21/823878 , H01L23/552 , H01L23/66 , H01L29/16 , H01L29/78603 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor device receiving as input a radio frequency signal having a frequency of 500 MHz or more and a power of 20 dBm or more is provided. The semiconductor device includes: a silicon substrate; a silicon oxide film formed on the silicon substrate; a radio frequency interconnect provided on the silicon oxide film and passing the radio frequency signal; a fixed potential interconnect provided on the silicon oxide film and placed at a fixed potential; and an acceptor-doped layer. The acceptor-doped layer is formed in a region of the silicon substrate. The region is in contact with the silicon oxide film. The acceptor-doped layer is doped with acceptors.
摘要翻译：作为输入接收具有500MHz以上的频率和20dBm以上的功率的射频信号的半导体装置。半导体器件包括：硅衬底; 形成在所述硅基板上的氧化硅膜; 设置在氧化硅膜上并通过射频信号的射频互连; 设置在氧化硅膜上并以固定电位放置的固定电位互连; 和受主掺杂层。受主掺杂层形成在硅衬底的区域中。该区域与氧化硅膜接触。受主掺杂层掺杂有受体。

6. 发明授权

US6024852A Sputtering target and production method thereof 失效
标题翻译：溅射靶材及其制备方法
公开(公告)号：US6024852A
公开(公告)日：2000-02-15
申请号：US984132
申请日：1997-12-03
申请人： Hidemasa Tamura , Norio Yokoyama , Eiichi Shimizu , Fumio Sasaki
发明人： Hidemasa Tamura , Norio Yokoyama , Eiichi Shimizu , Fumio Sasaki
IPC分类号： C22C14/00 , C23C14/34 , C23C14/00
CPC分类号： C22C14/00 , C23C14/3407
摘要： The present invention provides a sputtering target which generates a reduced quantity of particles during a sputtering and a method for producing such a sputtering target.Mirror treatment is carried out to a sputter surface 2 which is sputtered when forming a thin film, so that the sputter surface 2 has an arithmetic mean roughness Ra of 0.01 .mu.m or below. A sputtering target 1 with such a smooth sputter surface 2 having a small surface roughness enables to reduce a number of particles generated during a sputtering.
摘要翻译：本发明提供溅射时产生粒子减少的溅射靶，以及溅射靶的制造方法。对溅射表面2进行镜面处理，溅射表面2在形成薄膜时溅射，使得溅射表面2具有0.01μm或更小的算术平均粗糙度Ra。具有这种具有小表面粗糙度的光滑溅射表面2的溅射靶1能够减少在溅射期间产生的颗粒数量。

7. 发明授权

US08134224B2 Radio frequency semiconductor device 有权
标题翻译：射频半导体器件
公开(公告)号：US08134224B2
公开(公告)日：2012-03-13
申请号：US12046033
申请日：2008-03-11
申请人： Yoshitomo Sagae , Fumio Sasaki , Ryoichi Ohara
发明人： Yoshitomo Sagae , Fumio Sasaki , Ryoichi Ohara
IPC分类号： H01L21/02 , H01L21/425
CPC分类号： H01L27/1203 , H01L21/76264 , H01L21/823878 , H01L23/552 , H01L23/66 , H01L29/16 , H01L29/78603 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor device receiving as input a radio frequency signal having a frequency of 500 MHz or more and a power of 20 dBm or more is provided. The semiconductor device includes: a silicon substrate; a silicon oxide film formed on the silicon substrate; a radio frequency interconnect provided on the silicon oxide film and passing the radio frequency signal; a fixed potential interconnect provided on the silicon oxide film and placed at a fixed potential; and an acceptor-doped layer. The acceptor-doped layer is formed in a region of the silicon substrate. The region is in contact with the silicon oxide film. The acceptor-doped layer is doped with acceptors.
摘要翻译：作为输入接收具有500MHz以上的频率和20dBm以上的功率的射频信号的半导体装置。半导体器件包括：硅衬底; 形成在硅衬底上的氧化硅膜; 设置在氧化硅膜上并通过射频信号的射频互连; 设置在氧化硅膜上并以固定电位放置的固定电位互连; 和受主掺杂层。受主掺杂层形成在硅衬底的区域中。该区域与氧化硅膜接触。受主掺杂层掺杂有受体。

8. 发明申请

US20080064358A1 SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080064358A1
公开(公告)日：2008-03-13
申请号：US11853423
申请日：2007-09-11
申请人： Yoshitomo Sagae , Fumio Sasaki
发明人： Yoshitomo Sagae , Fumio Sasaki
IPC分类号： H01L27/12 , H01L21/84 , H04B1/28
CPC分类号： H01L27/1203 , H01L21/84
摘要： A semiconductor device includes: an SOI substrate with a silicon oxide layer 123 formed on a silicon substrate 122 and a semiconductor layer formed thereon; and a MOSFET formed within the semiconductor layer, wherein a region of the silicon substrate 122 through the silicon oxide layer 123 is removed by etching, which corresponds to a region of the semiconductor layer where the MOSFET is formed.
摘要翻译：半导体器件包括：形成在硅衬底122上的氧化硅层123和其上形成的半导体层的SOI衬底; 以及形成在半导体层内的MOSFET，其中通过蚀刻去除硅衬底122的穿过氧化硅层123的区域，其对应于形成MOSFET的半导体层的区域。

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