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    • 9. 发明授权
    • Semiconductor element, semiconductor storage device using the same, data writing method thereof, data reading method thereof, and manufacturing method of those
    • 半导体元件,使用其的半导体存储装置,其数据写入方法,数据读取方法及其制造方法
    • US07727843B2
    • 2010-06-01
    • US11651108
    • 2007-01-09
    • Hiroshi IshiharaKenji MaruyamaTetsuro TamuraHiromasa Hoko
    • Hiroshi IshiharaKenji MaruyamaTetsuro TamuraHiromasa Hoko
    • H01L21/336
    • G11C11/22H01L21/28291H01L27/11585H01L27/1159H01L29/78391
    • The invention relates to a semiconductor element used for a nonvolatile semiconductor storage device or the like, a semiconductor storage device using the same, a data writing method thereof, a data reading method thereof and a manufacturing method of those, and has an object to provide a semiconductor element in which scaling and integration of cells are possible, storage characteristics of data are excellent, and reduction in power consumption is possible, a semiconductor storage device using the same, a data writing method thereof, a data reading method thereof, and a manufacturing method of those. A pn junction diode GD with a ferroelectric gate as the semiconductor element includes a gate electrode formed on a ferroelectric film, an inversion layer formation region in which an inversion layer is formed in a semiconductor substrate below the ferroelectric film according to a polarization direction of the ferroelectric film, a cathode region formed on one of both sides of the inversion layer formation region, and an anode region formed on the other of both the sides.
    • 本发明涉及用于非易失性半导体存储器件等的半导体元件,使用该半导体存储器件的半导体存储器件,其数据写入方法,数据读取方法及其制造方法,其目的是提供 可以进行单元的缩放和积分的半导体元件,数据的存储特性优异,功耗的降低成为可能,使用该半导体元件的半导体存储装置,其数据写入方法,数据读取方法以及 制造方法。 具有铁电栅极作为半导体元件的pn结二极管GD包括形成在铁电体膜上的栅极电极,根据所述铁电体的极化方向在所述铁电体的下方的半导体基板中形成有反型层的反型层形成区域 铁电体膜,形成在反型层形成区域的两侧之一上的阴极区域和形成在两侧的另一侧的阳极区域。