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1. 发明申请

US20120223305A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120223305A1
公开(公告)日：2012-09-06
申请号：US13404516
申请日：2012-02-24
申请人： Hitomi SATO , Takayuki SAITO , Kosei NODA , Toru TAKAYAMA
发明人： Hitomi SATO , Takayuki SAITO , Kosei NODA , Toru TAKAYAMA
IPC分类号： H01L29/12
CPC分类号： H01L29/7869 , H01L27/10873 , H01L27/1156 , H01L29/4908 , H01L29/78603 , H01L29/78606
摘要： Provided is a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which a semiconductor film whose threshold voltage is difficult to control is used as an active layer. By using a silicon oxide film having a negative fixed charge as a film in contact with the active layer of the transistor or a film in the vicinity of the active layer, a negative electric field is always applied to the active layer due to the negative fixed charge and the threshold voltage of the transistor can be shifted in the positive direction. Thus, the highly reliable semiconductor device can be manufactured by giving stable electric characteristics to the transistor.
摘要翻译：提供了一种高可靠性的半导体器件，其通过对其中阈值电压难以控制的半导体膜用作有源层的晶体管给予稳定的电特性。通过使用具有负固定电荷的氧化硅膜作为与晶体管的有源层或有源层附近的膜接触的膜，由于负固定，总是向有源层施加负电场电荷和晶体管的阈值电压可以向正方向移动。因此，可以通过给晶体管提供稳定的电特性来制造高度可靠的半导体器件。

2. 发明申请

US20130029447A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, DELAMINATION METHOD, AND TRANSFERRING METHOD 有权
标题翻译：半导体器件及其制造方法，分层方法和传输方法
公开(公告)号：US20130029447A1
公开(公告)日：2013-01-31
申请号：US13587111
申请日：2012-08-16
申请人： Junya MARUYAMA , Toru TAKAYAMA , Yumiko OHNO , Shunpei YAMAZAKI
发明人： Junya MARUYAMA , Toru TAKAYAMA , Yumiko OHNO , Shunpei YAMAZAKI
IPC分类号： H01L33/08
CPC分类号： H01L27/1218 , H01L21/76251 , H01L27/1214 , H01L27/1248 , H01L27/1266 , H01L29/78603 , H01L33/24 , H01L33/44 , H01L33/56 , H01L33/62 , H01L2221/68368
摘要： A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.
摘要翻译：在基板上形成金属膜的状态下，通过物理手段或机械装置分离基板和分层膜，以及包含包含金属的氧化物膜和包含硅的膜的分层，其形成在提供金属膜。具体地说，通过在金属膜上形成包含金属的氧化物层而获得的TFT; 通过热处理使氧化层结晶; 并且在氧化物层的一层或氧化物层的界面上形成分层。

3. 发明申请

US20130015441A1 IC CARD AND BOOKING-ACCOUNT SYSTEM USING THE IC CARD 有权
标题翻译：使用IC卡的IC卡和预订帐号系统
公开(公告)号：US20130015441A1
公开(公告)日：2013-01-17
申请号：US13618384
申请日：2012-09-14
申请人： Toru TAKAYAMA , Junya MARUYAMA , Yuugo GOTO , Yumiko OHNO , Mai AKIBA
发明人： Toru TAKAYAMA , Junya MARUYAMA , Yuugo GOTO , Yumiko OHNO , Mai AKIBA
IPC分类号： H01L29/04
CPC分类号： G06K19/077 , G06K19/07703 , G06Q20/105 , G06Q20/3415 , G07F7/1008 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01L2924/00011 , H01L2924/01015 , H01L2924/01047 , H01L2924/10253 , H01L2924/10271 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/01005 , H01L2224/45147
摘要： It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.
摘要翻译：本发明的目的是提供一种高度复杂的功能IC卡，其可以通过防止诸如改变脸部图像的伪造，以及显示其他图像以及脸部照片来确保安全性。一种IC卡，包括显示装置和多个薄膜集成电路; 其中所述显示装置的驱动由所述多个薄膜集成电路控制; 通过使用多晶半导体膜形成用于多个薄膜集成电路的半导体元件和显示装置; 层叠多个薄膜集成电路; 显示装置和多个薄膜集成电路被配备用于相同的印刷线路板; IC卡的厚度为0.05mm〜1mm。

4. 发明申请

US20120244659A1 METHOD FOR FORMING OXIDE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：形成氧化物半导体膜的方法和制造半导体器件的方法
公开(公告)号：US20120244659A1
公开(公告)日：2012-09-27
申请号：US13422241
申请日：2012-03-16
申请人： Yuki IMOTO , Tetsunori MARUYAMA , Toru TAKAYAMA
发明人： Yuki IMOTO , Tetsunori MARUYAMA , Toru TAKAYAMA
IPC分类号： H01L21/42
CPC分类号： H01L29/7869 , H01L29/66969
摘要： A method for forming an oxide semiconductor film having favorable semiconductor characteristics is provided. In addition, a method for manufacturing a semiconductor device having favorable electric characteristics, with use of the oxide semiconductor film is provided. A method for forming an oxide semiconductor film including the steps of forming an oxide semiconductor film, forming a hydrogen permeable film over and in contact with the oxide semiconductor film, forming a hydrogen capture film over and in contact with the hydrogen permeable film, and releasing hydrogen from the oxide semiconductor film by performing heat treatment. Further, in a method for manufacturing a semiconductor device, the method for forming an oxide semiconductor film is used.
摘要翻译：提供了形成具有良好的半导体特性的氧化物半导体膜的方法。此外，提供了利用氧化物半导体膜制造具有良好电特性的半导体器件的方法。一种形成氧化物半导体膜的方法，包括以下步骤：形成氧化物半导体膜，在氧化物半导体膜上形成氢可渗透膜并与其接触，在氢可渗透膜上形成氢捕获膜并与氢可渗透膜接触通过进行热处理来自氧化物半导体膜的氢。此外，在半导体器件的制造方法中，使用形成氧化物半导体膜的方法。

5. 发明申请

US20120201955A1 FILM-FORMING APPARATUS, METHOD OF CLEANING THE SAME, AND METHOD OF MANUFACTURING A LIGHT-EMITTING DEVICE 有权
标题翻译：成膜装置，清洗方法和制造发光装置的方法
公开(公告)号：US20120201955A1
公开(公告)日：2012-08-09
申请号：US13449396
申请日：2012-04-18
申请人： Shunpei YAMAZAKI , Toru TAKAYAMA , Takeshi FUKUNAGA
发明人： Shunpei YAMAZAKI , Toru TAKAYAMA , Takeshi FUKUNAGA
IPC分类号： C23C16/458
CPC分类号： C23C14/564 , C23C14/04 , C23C14/12 , C23C14/243 , C23C14/54
摘要： A cleaning method of removing a vapor-deposition material adhering to equipments without exposure to the atmosphere is provided. A vapor-deposition material adhering to equipments (components of a film-forming apparatus) such as a substrate holder, a vapor-deposition mask, a mask holder, or an adhesion preventing shield provided in a film-forming chamber are subjected to heat treatment. Because of this, the adhering vapor-deposition material is re-sublimated, and removed by exhaust through a vacuum pump. By including such a cleaning method in the steps of manufacturing an electro-optical device, the manufacturing steps are shortened, and an electro-optical device with high reliability can be realized.
摘要翻译：提供了一种清除附着在不暴露于大气中的设备的气相沉积材料的方法。将附着在设置在成膜室上的设备（成膜装置的部件）如基板保持器，蒸镀掩模，掩模保持器或防粘附屏蔽物的气相沉积材料进行热处理。因此，附着的气相沉积材料被重新升华，并通过真空泵通过排气除去。通过在制造电光装置的步骤中包括这种清洁方法，缩短了制造步骤，并且可以实现具有高可靠性的电光装置。

6. 发明申请

US20110272700A1 THIN FILM TRANSISTOR, ELECTRONIC DEVICE HAVING THE SAME, AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管，具有该薄膜晶体管的电子器件及其制造方法
公开(公告)号：US20110272700A1
公开(公告)日：2011-11-10
申请号：US13185931
申请日：2011-07-19
申请人： Tetsuji YAMAGUCHI , Kengo AKIMOTO , Hiroki KAYOIJI , Toru TAKAYAMA
发明人： Tetsuji YAMAGUCHI , Kengo AKIMOTO , Hiroki KAYOIJI , Toru TAKAYAMA
IPC分类号： H01L29/786
CPC分类号： H01L27/12 , H01L27/1248
摘要： An object of the present invention is to provide a method for manufacturing a thin film transistor which enables heat treatment aimed at improving characteristics of a gate insulating film such as lowering of an interface level or reduction in a fixed charge without causing a problem of misalignment in patterning due to expansion or shrinkage of glass. A method for manufacturing a thin film transistor of the present invention comprises the steps of heat-treating in a state where at least a gate insulating film is formed over a semiconductor film on which element isolation is not performed, simultaneously isolating the gate insulating film and the semiconductor film into an element structure, forming an insulating film covering a side face of an exposed semiconductor film, thereby preventing a short-circuit between the semiconductor film and a gate electrode. Expansion or shrinkage of a glass substrate during the heat treatment can be prevented from affecting misalignment in patterning since the gate insulating film and the semiconductor film are simultaneously processed into element shapes after the heat treatment.
摘要翻译：本发明的目的是提供一种薄膜晶体管的制造方法，其能够进行旨在提高栅极绝缘膜的特性的热处理，例如降低界面电平或降低固定电荷，而不会引起不对准的问题由于玻璃的膨胀或收缩造成图案化。本发明的薄膜晶体管的制造方法包括以下步骤：在不进行元件隔离的半导体膜上形成至少栅极绝缘膜的状态下进行热处理，同时隔离栅极绝缘膜和将半导体膜形成为元件结构，形成覆盖露出的半导体膜的侧面的绝缘膜，由此防止半导体膜与栅电极之间的短路。由于栅极绝缘膜和半导体膜在热处理后同时被加工成元件形状，所以可以防止热处理期间的玻璃基板的膨胀或收缩，从而影响图案中的未对准。

7. 发明申请

US20110244652A1 METHOD OF MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20110244652A1
公开(公告)日：2011-10-06
申请号：US13070512
申请日：2011-03-24
申请人： Shunpei YAMAZAKI , Toru TAKAYAMA , Mizuho SATO , Noriaki UTO
发明人： Shunpei YAMAZAKI , Toru TAKAYAMA , Mizuho SATO , Noriaki UTO
IPC分类号： H01L21/30
CPC分类号： H01L21/02046 , H01L21/02052 , H01L21/302 , H01L21/76254
摘要： An object of the present invention is to provide an SOI substrate including a semiconductor layer which is efficiently planarized. A method for manufacturing an SOI substrate includes a step of irradiating a bond substrate with an accelerated ion to form an embrittlement region; a step of bonding the bond substrate and the base substrate with an insulating layer positioned therebetween; a step of splitting the bond substrate at the embrittlement region to leave a semiconductor layer bonded to the base substrate; a step of disposing the semiconductor layer in front of a semiconductor target containing the same semiconductor material as the semiconductor layer; and a step of alternately irradiating the surface of the semiconductor layer and the semiconductor target with a rare gas ion, so that the surface of the semiconductor layer is planarized.
摘要翻译：本发明的目的是提供一种SOI衬底，其包括有效平面化的半导体层。 SOI衬底的制造方法包括用加速离子照射接合衬底以形成脆化区域的步骤; 将所述接合基板与所述基板的绝缘层接合的工序; 在所述脆化区域分离所述键合衬底以留下结合到所述基底衬底的半导体层的步骤; 将半导体层设置在包含与半导体层相同的半导体材料的半导体靶的前面的步骤; 以及用稀有气体离子交替地照射半导体层和半导体靶的表面的步骤，使得半导体层的表面被平坦化。

8. 发明申请

US20110159771A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
公开(公告)号：US20110159771A1
公开(公告)日：2011-06-30
申请号：US13045560
申请日：2011-03-11
申请人： Shunpei YAMAZAKI , Toru TAKAYAMA , Junya MARUYAMA , Yumiko OHNO
发明人： Shunpei YAMAZAKI , Toru TAKAYAMA , Junya MARUYAMA , Yumiko OHNO
IPC分类号： H01J9/24
CPC分类号： H01L27/1218 , H01L23/291 , H01L27/1214 , H01L27/1266 , H01L27/3244 , H01L29/66757 , H01L29/78603 , H01L51/0002 , H01L51/0021 , H01L51/0024 , H01L51/003 , H01L2221/68368 , H01L2924/0002 , Y10S438/928 , Y10S438/982 , H01L2924/00
摘要： It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.

9. 发明申请

US20110114999A1 SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME, AND TRANSISTOR 审中-公开
标题翻译：溅射目标及其制造方法和晶体管
公开(公告)号：US20110114999A1
公开(公告)日：2011-05-19
申请号：US12945580
申请日：2010-11-12
申请人： Shunpei Yamazaki , Toru TAKAYAMA , Keiji SATO
发明人： Shunpei Yamazaki , Toru TAKAYAMA , Keiji SATO
IPC分类号： H01L29/80 , B23K1/20 , C21D1/34 , C23C14/14
CPC分类号： H01L29/7869 , C23C14/08 , C23C14/3414 , H01L21/0242 , H01L21/02422 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/41733 , H01L29/42384 , H01L29/45 , H01L29/66969 , H01L29/78618
摘要： To provide a deposition technique for forming an oxide semiconductor film. An oxide semiconductor film is formed using a sputtering target which contains a sintered body of metal oxide and in which the concentration of hydrogen contained in the sintered body of metal oxide is, for example, as low as 1×1016 atoms/cm3 or lower, so that the oxide semiconductor film contains a small amount of impurities such as a hydrogen atom and a compound containing a hydrogen atom typified by H2O. Further, this oxide semiconductor film is used as an active layer of a transistor.
摘要翻译：提供用于形成氧化物半导体膜的沉积技术。使用包含金属氧化物烧结体的溅射靶形成氧化物半导体膜，其中金属氧化物烧结体中所含的氢浓度例如低至1×1016原子/ cm3以下，使得氧化物半导体膜含有少量杂质如氢原子和含有以H 2 O为代表的氢原子的化合物。此外，该氧化物半导体膜用作晶体管的有源层。

10. 发明申请

US20090256467A1 LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20090256467A1
公开(公告)日：2009-10-15
申请号：US12244984
申请日：2008-10-03
申请人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Masayuki SAKAKURA , Toru TAKAYAMA
发明人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Masayuki SAKAKURA , Toru TAKAYAMA
IPC分类号： H01J1/62
CPC分类号： H01L27/3244 , H01L27/12 , H01L27/1248 , H01L27/3246 , H01L27/3258 , H01L29/16 , H01L29/66757 , H01L29/78621 , H01L29/78645 , H01L29/78675 , H01L29/78696 , H01L51/5008 , H01L51/524 , H01L51/5253 , H01L51/56 , H01L2227/323 , H01L2251/566
摘要： The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.
摘要翻译：本发明的目的是提高包括TFT和有机发光元件的发光装置的可靠性。根据本发明的具有薄膜晶体管和发光元件的发光装置包括：栅电极上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层，形成在第三无机绝缘层上的阳极层，第二有机绝缘层与阳极层的端部重叠并且具有35度至45度的倾斜角度;形成在第二有机绝缘层的上表面和侧表面上并且在阳极层上具有开口的第四无机绝缘层，有机化合物形成为与阳极层和第四无机绝缘层接触且含有发光材料的层，以及与含有发光材料的有机化合物层接触形成的阴极层，其中第三无机绝缘层和第四无机绝缘层由氮化硅或氮化铝形成。

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