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1. 发明申请

US20210293686A1 PARTICLE SIZE DISTRIBUTION MEASUREMENT DEVICE AND PROGRAM FOR A PARTICLE SIZE DISTRIBUTION MEASUREMENT DEVICE 有权
公开(公告)号：US20210293686A1
公开(公告)日：2021-09-23
申请号：US16341758
申请日：2017-10-11
申请人： Tetsuji YAMAGUCHI , Keijiro SAKURAMOTO , Tetsuya MORI , Hirosuke SUGASAWA
发明人： Tetsuji YAMAGUCHI , Keijiro SAKURAMOTO , Tetsuya MORI , Hirosuke SUGASAWA
IPC分类号： G01N15/02
摘要： A particle size distribution measurement device contains a specific particle size light intensity calculation unit that calculates a light intensity generated by particles having a specific particle size that are contained in an object, a correlation data storage unit that stores particle number-light intensity correlation data, and a particle number calculation unit that calculates the number of particles having a specific particle size that are contained in the object being measured based on light intensities calculated by the specific particle size light intensity calculation unit, and on the particle number-light intensity correlation data.

2. 发明授权

US09064762B2 Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus 有权
标题翻译：固态成像装置，制造固态成像装置的方法和成像装置
公开(公告)号：US09064762B2
公开(公告)日：2015-06-23
申请号：US12622652
申请日：2009-11-20
申请人： Tetsuji Yamaguchi
发明人： Tetsuji Yamaguchi
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14687
摘要： A solid-state imaging device includes, on a semiconductor substrate, a pixel portion having a plurality of pixels provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain a signal charge and a pixel transistor portion, which converts the signal charge read from the photoelectric conversion portion to a voltage, wherein an element isolation region disposed in the pixel portion includes an insulating film buried in a trench disposed in the semiconductor substrate, and the insulating film includes an insulating film having a negative charge.
摘要翻译：固态成像装置在半导体基板上具有具有设置有光电转换部的多个像素的像素部，该光电转换部对光入射光进行光电转换以获得信号电荷和像素晶体管部，该像素部将转换信号电荷读数从所述光电转换部到电压，其中设置在所述像素部中的元件隔离区域包括埋设在所述半导体衬底中的沟槽中的绝缘膜，并且所述绝缘膜包括具有负电荷的绝缘膜。

3. 发明授权

US09034164B2 Particle characterization cell and particle characterization instrument 有权
标题翻译：颗粒表征细胞和颗粒表征仪
公开(公告)号：US09034164B2
公开(公告)日：2015-05-19
申请号：US13220813
申请日：2011-08-30
申请人： Tetsuji Yamaguchi , Makoto Nagura
发明人： Tetsuji Yamaguchi , Makoto Nagura
IPC分类号： G01N1/10 , G01N21/51
CPC分类号： G01N21/51 , G01N2021/513
摘要： The present invention is configured to be provided with: a bottom-equipped tubular cell main body that forms an internal space S1 that extends in a longer direction, and has one end part that is opened; a pair of applying electrodes that are arranged so as to face to each other in the internal space; and a fixing spacer that intervenes between the pair of applying electrodes to thereby define a distance between the applying electrodes, and fixes the pair of applying electrodes, wherein in a state where the fixing spacer is inserted into the cell main body, in a lower part of the internal space of the cell main body, a zeta potential measuring space in which the pair of applying electrodes are exposed is formed.
摘要翻译：本发明的目的是提供一种底部装配的管状电池主体，其形成一个沿较长方向延伸的内部空间S1，并且具有一个端部被打开; 一对施加电极，其布置成在所述内部空间中彼此面对; 以及固定间隔物，其插入在所述一对施加电极之间，由此限定所述施加电极之间的距离，并且将所述一对施加电极固定在所述固定间隔件插入所述电池主体的状态下，形成电池主体的内部空间，形成有一对施加电极露出的ζ电位测量空间。

4. 发明授权

US08450728B2 Solid-state imaging device, method of manufacturing the same, and electronic apparatus 有权
标题翻译：固态成像装置及其制造方法以及电子装置
公开(公告)号：US08450728B2
公开(公告)日：2013-05-28
申请号：US12974295
申请日：2010-12-21
申请人： Tetsuji Yamaguchi
发明人： Tetsuji Yamaguchi
IPC分类号： H01L31/113
CPC分类号： H01L27/14603 , H01L27/1464 , H01L27/14643
摘要： A solid-state imaging device including a semiconductor substrate, a photoelectric conversion portion interposed between a lower electrode and an upper electrode, a contact plug formed so as to connect the lower electrode and the semiconductor substrate in order to read signal charges generated in the photoelectric conversion portion to the semiconductor substrate side, a vertical type transmitting path configured by sequentially laminating a connection portion for electrically connecting the contact plug to the semiconductor substrate, a charge accumulation layer for accumulating the signal charges read to the connection portion, and a potential barrier layer configuring a potential barrier between the connection portion and the charge accumulation layer in a vertical direction of the semiconductor substrate, and a charge reading portion configured to read the signal charges accumulated in the charge accumulation layer to the circuit forming surface side of the semiconductor substrate.
摘要翻译：一种固态成像装置，包括半导体衬底，介于下电极和上电极之间的光电转换部分，形成为连接下电极和半导体衬底的接触插塞，以便读取在光电转换部分到半导体衬底侧，垂直型传输路径，其通过顺序地层叠用于将接触插塞电连接到半导体衬底的连接部分，用于累积读取到连接部分的信号电荷的电荷累积层，以及势垒层构成在半导体衬底的垂直方向上的连接部分和电荷累积层之间的势垒;以及电荷读取部分，被配置为将累积在电荷累积层中的信号电荷读取到半导体衬底的电路形成表面侧。

5. 发明授权

US08410418B2 Solid-state imaging device, method for manufacturing the same, and imaging apparatus 有权
标题翻译：固态成像装置及其制造方法以及成像装置
公开(公告)号：US08410418B2
公开(公告)日：2013-04-02
申请号：US12598691
申请日：2007-08-20
申请人： Tetsuji Yamaguchi , Yuko Ohgishi , Takashi Ando , Harumi Ikeda
发明人： Tetsuji Yamaguchi , Yuko Ohgishi , Takashi Ando , Harumi Ikeda
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14636 , H01L27/1461 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/14683 , H01L27/14818 , H01L27/14868
摘要： Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging device 1 having a light-receiving portion 12 to photoelectrically convert incident light is characterized by including a film 21, which is disposed on a light-receiving surface 12s of the above-described light-receiving portion 12 and which lowers an interface state, and a film 22, which is disposed on the above-described film 21 to lower the interface state and which has a negative fixed charge, wherein a hole accumulation layer 23 is disposed on the light-receiving surface 12s side of the light-receiving portion 12.
摘要翻译：实现适当的空穴积聚层和减少暗电流被允许变得相互兼容。具有光电转换入射光的受光部12的固态成像装置1的特征在于，包括设置在上述受光部12的受光面12s上的膜21，界面状态和膜22，其设置在上述膜21上以降低界面状态并具有负的固定电荷，其中，空穴积累层23设置在该光接收表面12s侧光接收部分12。

6. 发明授权

US08362693B2 Display device and manufacturing method of display device 有权
标题翻译：显示装置及显示装置的制造方法
公开(公告)号：US08362693B2
公开(公告)日：2013-01-29
申请号：US13277478
申请日：2011-10-20
申请人： Shunpei Yamazaki , Masayuki Sakakura , Masaharu Nagai , Yutaka Matsuda , Kengo Akimoto , Gen Fujii , Tetsuji Yamaguchi
发明人： Shunpei Yamazaki , Masayuki Sakakura , Masaharu Nagai , Yutaka Matsuda , Kengo Akimoto , Gen Fujii , Tetsuji Yamaguchi
IPC分类号： H01L51/10
CPC分类号： H01L51/529 , H01L27/12 , H01L27/1214 , H01L27/3246 , H01L27/3248 , H01L27/3258 , H01L27/3276 , H01L29/66757 , H01L51/5206 , H01L51/5246 , H01L2251/5315 , H01L2251/5323
摘要： It is an object of the present invention to provide a reliable display device and a method for manufacturing the display device reducing the number of manufacturing steps, and with higher yield. A display device according to the invention includes a plurality of display elements each having a first electrode, a layer containing an organic compound, and a second electrode. The display device further includes a heat-resistant planarizing film over a substrate having an insulating surface, a first electrode over the heat-resistant, planarizing film, a wiring covering an end portion of the first electrode, a partition wall covering the end portion of first electrode and the wiring, a layer containing an organic compound, and a second electrode over the layer containing an organic compound.
摘要翻译：本发明的目的是提供一种可靠的显示装置和用于制造显示装置的方法，其减少制造步骤的数量，并且以更高的产量。根据本发明的显示装置包括多个显示元件，每个显示元件具有第一电极，含有有机化合物的层和第二电极。显示装置还包括在具有绝缘表面的基板上的耐热平面化膜，在耐热平坦化膜上的第一电极，覆盖第一电极的端部的布线，覆盖第一电极的端部的分隔壁第一电极和布线，含有有机化合物的层，以及包含有机化合物的层上的第二电极。

7. 发明授权

US08120111B2 Thin film transistor including insulating film and island-shaped semiconductor film 有权
标题翻译：薄膜晶体管包括绝缘膜和岛状半导体膜
公开(公告)号：US08120111B2
公开(公告)日：2012-02-21
申请号：US12078738
申请日：2008-04-04
申请人： Tetsuji Yamaguchi , Kengo Akimoto , Hiroki Kayoiji , Toru Takayama
发明人： Tetsuji Yamaguchi , Kengo Akimoto , Hiroki Kayoiji , Toru Takayama
IPC分类号： H01L27/13
CPC分类号： H01L27/12 , H01L27/1248
摘要： An object of the present invention is to provide a method for manufacturing a thin film transistor which enables heat treatment aimed at improving characteristics of a gate insulating film such as lowering of an interface level or reduction in a fixed charge without causing a problem of misalignment in patterning due to expansion or shrinkage of glass. A method for manufacturing a thin film transistor of the present invention comprises the steps of heat-treating in a state where at least a gate insulating film is formed over a semiconductor film on which element isolation is not performed, simultaneously isolating the gate insulating film and the semiconductor film into an element structure, forming an insulating film covering a side face of an exposed semiconductor film, thereby preventing a short-circuit between the semiconductor film and a gate electrode. Expansion or shrinkage of a glass substrate during the heat treatment can be prevented from affecting misalignment in patterning since the gate insulating film and the semiconductor film are simultaneously processed into element shapes after the heat treatment.
摘要翻译：本发明的目的是提供一种薄膜晶体管的制造方法，其能够进行旨在提高栅极绝缘膜的特性的热处理，例如降低界面电平或降低固定电荷，而不会引起不对准的问题由于玻璃的膨胀或收缩造成图案化。本发明的薄膜晶体管的制造方法包括以下步骤：在不进行元件隔离的半导体膜上形成至少栅极绝缘膜的状态下进行热处理，同时隔离栅极绝缘膜和将半导体膜形成为元件结构，形成覆盖露出的半导体膜的侧面的绝缘膜，由此防止半导体膜与栅电极之间的短路。由于栅极绝缘膜和半导体膜在热处理后同时被加工成元件形状，所以可以防止热处理期间的玻璃基板的膨胀或收缩，从而影响图案中的未对准。

8. 发明申请

US20110272700A1 THIN FILM TRANSISTOR, ELECTRONIC DEVICE HAVING THE SAME, AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管，具有该薄膜晶体管的电子器件及其制造方法
公开(公告)号：US20110272700A1
公开(公告)日：2011-11-10
申请号：US13185931
申请日：2011-07-19
申请人： Tetsuji YAMAGUCHI , Kengo AKIMOTO , Hiroki KAYOIJI , Toru TAKAYAMA
发明人： Tetsuji YAMAGUCHI , Kengo AKIMOTO , Hiroki KAYOIJI , Toru TAKAYAMA
IPC分类号： H01L29/786
CPC分类号： H01L27/12 , H01L27/1248
摘要： An object of the present invention is to provide a method for manufacturing a thin film transistor which enables heat treatment aimed at improving characteristics of a gate insulating film such as lowering of an interface level or reduction in a fixed charge without causing a problem of misalignment in patterning due to expansion or shrinkage of glass. A method for manufacturing a thin film transistor of the present invention comprises the steps of heat-treating in a state where at least a gate insulating film is formed over a semiconductor film on which element isolation is not performed, simultaneously isolating the gate insulating film and the semiconductor film into an element structure, forming an insulating film covering a side face of an exposed semiconductor film, thereby preventing a short-circuit between the semiconductor film and a gate electrode. Expansion or shrinkage of a glass substrate during the heat treatment can be prevented from affecting misalignment in patterning since the gate insulating film and the semiconductor film are simultaneously processed into element shapes after the heat treatment.
摘要翻译：本发明的目的是提供一种薄膜晶体管的制造方法，其能够进行旨在提高栅极绝缘膜的特性的热处理，例如降低界面电平或降低固定电荷，而不会引起不对准的问题由于玻璃的膨胀或收缩造成图案化。本发明的薄膜晶体管的制造方法包括以下步骤：在不进行元件隔离的半导体膜上形成至少栅极绝缘膜的状态下进行热处理，同时隔离栅极绝缘膜和将半导体膜形成为元件结构，形成覆盖露出的半导体膜的侧面的绝缘膜，由此防止半导体膜与栅电极之间的短路。由于栅极绝缘膜和半导体膜在热处理后同时被加工成元件形状，所以可以防止热处理期间的玻璃基板的膨胀或收缩，从而影响图案中的未对准。

9. 发明申请

US20110216212A1 SOLID-STATE IMAGING DEVICE, METHOD OF FABRICATING SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS 有权
标题翻译：固态成像装置，制造固态成像装置的方法，驱动固态成像装置的方法和电子装置
公开(公告)号：US20110216212A1
公开(公告)日：2011-09-08
申请号：US13029338
申请日：2011-02-17
申请人： Taiichiro Watanabe , Keiji Mabuchi , Tetsuji Yamaguchi , Isao Hirota , Kouichi Harada
发明人： Taiichiro Watanabe , Keiji Mabuchi , Tetsuji Yamaguchi , Isao Hirota , Kouichi Harada
IPC分类号： H04N5/228 , H01L31/113 , H01L31/18 , H04N5/335
CPC分类号： H04N5/3575 , H01L27/307 , H04N5/2353 , H04N5/353
摘要： A solid-state imaging device includes a substrate, a photoelectric conversion element provided on the light incidence side of the substrate and including a photoelectric conversion film sandwiched between a first electrode provided separately for each of pixels, and a second electrode provided opposite the first electrode, the photoelectric conversion film being made of an organic material or an inorganic material and generating a signal charge according to the quantity of incident light, an amplifier transistor having an amplifier gate electrode connected to the first electrode, and a voltage control circuit that is connected to the second electrode, and supplies a desired voltage to the second electrode.
摘要翻译：一种固态成像装置，包括基板，设置在基板的光入射侧的光电转换元件，并且包括被夹持在为每个像素单独设置的第一电极之间的光电转换膜和与第一电极相对设置的第二电极所述光电转换膜由有机材料或无机材料制成，并且根据入射光量产生信号电荷;放大晶体管，具有连接到所述第一电极的放大器栅电极;以及电压控制电路，并且向第二电极提供期望的电压。

10. 发明授权

US07724369B2 Correlator 有权
标题翻译：相关者
公开(公告)号：US07724369B2
公开(公告)日：2010-05-25
申请号：US12245902
申请日：2008-10-06
申请人： Tetsuji Yamaguchi , Shigeyuki Kawarabayashi
发明人： Tetsuji Yamaguchi , Shigeyuki Kawarabayashi
IPC分类号： G01N15/02
CPC分类号： G01N15/0205
摘要： In order to improve an accuracy of an autocorrelation function, a correlator comprises a counter 61 for receiving a pulse signal at given time intervals (sampling times) and counting the number of pulses; a shift register 63 for receiving the number of pulses counted by the counter 61 and performing sequential time delay; an operation part 64 for performing a product-sum operation of an output from the counter 61 and that delayed by the shift register 63 for each channel; and a control part 65 for setting a delay time or a sampling time by the shift register 63 on a basis of a relationship of the Fibonacci sequence.
摘要翻译：为了提高自相关函数的精度，相关器包括用于以给定时间间隔（采样时间）接收脉冲信号并计数脉冲数的计数器61; 移位寄存器63，用于接收由计数器61计数的脉冲数，并执行连续时间延迟; 操作部分64，用于对每个通道执行来自计数器61的输出和由移位寄存器63延迟的乘积和运算; 以及控制部分65，用于根据斐波纳契序列的关系设置移位寄存器63的延迟时间或采样时间。

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