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1. 发明专利

JP2013001598A Method and apparatus for manufacturing substrate for producing carbon nanotube 审中-公开
标题翻译：制造碳纳米管的基材的方法和装置
公开(公告)号：JP2013001598A
公开(公告)日：2013-01-07
申请号：JP2011133765
申请日：2011-06-16
申请人： Hitachi Zosen Corp , 日立造船株式会社
发明人： TATSUMI HIROSHI , MIZUTA KENJI
IPC分类号： C01B31/02 , B01J23/745 , B01J37/02 , B82Y40/00
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for manufacturing with high productivity a substrate for producing a carbon nanotube capable of producing stably a carbon nanotube having high orientation.SOLUTION: This method for manufacturing a substrate for producing a carbon nanotube including an intermediate layer B formed on the substrate K and comprising silica, and a catalyst layer formed on the intermediate layer B, for producing a carbon nanotube, has steps for: applying a silica solution onto the substrate K by a silica solution applying device 11, drying the silica solution by a first heating drying furnace 15 and then firing it, to thereby form the intermediate layer B on the substrate K; smoothing the surface of the intermediate layer B by alkali etching by an etching part 31; and applying a catalyst solution onto the smoothed surface of the intermediate layer B by a catalyst solution applying device 21, drying the catalyst solution by a second heating drying furnace 25 and then firing it, to thereby form the catalyst layer on the intermediate layer B.
摘要翻译：解决的问题：提供一种用于制造能够稳定地制备具有高取向性的碳纳米管的碳纳米管的生产高生产率的方法和装置。解决方案：用于制造碳纳米管的方法，该碳纳米管包括形成在基板K上并包含二氧化硅的中间层B和形成在中间层B上的用于制造碳纳米管的催化剂层的步骤包括以下步骤：：通过二氧化硅溶液涂布装置11将二氧化硅溶液施加到基板K上，通过第一加热干燥炉15干燥二氧化硅溶液，然后烧制，从而在基板K上形成中间层B. 通过蚀刻部分31的碱蚀刻来平滑中间层B的表面; 并通过催化剂溶液施加装置21将催化剂溶液施加到中间层B的平滑表面上，通过第二加热干燥炉25干燥催化剂溶液，然后烧制，从而在中间层B上形成催化剂层。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2011084436A Substrate for producing carbon nanotube 有权
标题翻译：生产碳纳米管的基材
公开(公告)号：JP2011084436A
公开(公告)日：2011-04-28
申请号：JP2009238803
申请日：2009-10-16
申请人： Hitachi Zosen Corp , 日立造船株式会社
发明人： MIZUTA KENJI , TATSUMI HIROSHI
IPC分类号： C01B31/02 , B82B3/00
摘要： PROBLEM TO BE SOLVED: To provide a substrate for producing carbon nanotubes, controllable of adhesion strength of carbon nanotubes without requiring a large-scale apparatus or a treatment process. SOLUTION: The substrate 1 for producing carbon nanotubes includes a catalyst metal layer 4 for producing carbon nanotubes, provided on the surface of a substrate body 2, wherein an intermediate layer 3 containing a mixture of silicon dioxide (SiO 2 ) and aluminum oxide (Al 2 O 3 ) is disposed between the substrate body 2 and the catalyst metal layer 4, the proportions in the mixture are specified, in terms of a molar ratio of raw materials (Si/Al), in a range from 0.2 to 5, and the thickness of the intermediate layer 3 is specified in a range from 10 to 500 nm. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于生产碳纳米管的基板，可以控制碳纳米管的粘合强度，而不需要大规模的设备或处理工艺。解决方案：用于制造碳纳米管的基板1包括设置在基板主体2的表面上的用于制造碳纳米管的催化剂金属层4，其中含有二氧化硅（SiO 2 ）和氧化铝（Al 2 3 ）设置在基体2和催化剂金属层4之间，指定混合物中的比例，原料（Si / Al）的摩尔比在0.2〜5的范围内，中间层3的厚度在10〜500nm的范围内。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2010235401A Method for manufacturing carbon nanotube 有权
标题翻译：制备碳纳米管的方法
公开(公告)号：JP2010235401A
公开(公告)日：2010-10-21
申请号：JP2009085809
申请日：2009-03-31
申请人： Hitachi Zosen Corp , 日立造船株式会社
发明人： MIZUTA KENJI , YANO ATSUSHI
IPC分类号： C01B31/02 , B01J23/745
摘要： PROBLEM TO BE SOLVED: To manufacture carbon nanotubes having specific lengths and weights (density) without much care and cost. SOLUTION: A method for manufacturing carbon nanotubes includes: a step of forming a thin film made of a catalyst metal on a substrate; a step of forming fine particles of the metal of the catalyst metal thin film; and forming carbon nanotubes with the fine particles of the catalyst metal as nucleus on the substrate. The step of forming fine particles of the metal of the catalyst metal thin film is carried out by heating at 700°C or higher and at lower than 900°C in the oxygen atmosphere of 5-15%. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：制造具有特定长度和重量（密度）的碳纳米管，而不用小心和费用。解决方案：一种制造碳纳米管的方法包括：在基板上形成由催化剂金属制成的薄膜的步骤; 形成催化剂金属薄膜的金属的微粒的工序; 并在催化剂金属的细颗粒上形成碳纳米管作为核。通过在5〜15％的氧气氛中，在700℃以上且900℃以下的加热来进行形成催化剂金属薄膜的金属的微粒子的工序。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2010173915A Method for producing carbon nanotube 审中-公开
标题翻译：生产碳纳米管的方法
公开(公告)号：JP2010173915A
公开(公告)日：2010-08-12
申请号：JP2009020402
申请日：2009-01-30
申请人： Hitachi Zosen Corp , 日立造船株式会社
发明人： MIZUTA KENJI , YANO ATSUSHI
IPC分类号： C01B31/02
摘要： PROBLEM TO BE SOLVED: To provide a method for producing carbon nanotubes, by which carbon nanotubes having stable orientation can be produced even when a substrate is reused.
SOLUTION: The method for producing carbon nanotubes includes steps of: forming an amorphous layer on the surface of a substrate essentially comprising a nonoxide material containing silicon by heating the substrate at 500 to 1,000°C for 1 to 50 hours in air; forming a catalyst layer containing a catalyst metal on the amorphous layer; micronizing the metal in the catalyst layer into fine particles; and forming carbon nanotubes by using the fine particles as a catalyst.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：为了提供一种碳纳米管的制造方法，即使在再次使用基板时也能够制造具有稳定取向性的碳纳米管。解决方案：制造碳纳米管的方法包括以下步骤：通过在空气中在500〜1000℃下加热基材1〜50小时，在基板的表面上形成非晶层，基底上含有非氧化物的硅，在所述非晶层上形成含有催化剂金属的催化剂层; 将催化剂层中的金属微粉化成细颗粒; 并通过使用细颗粒作为催化剂形成碳纳米管。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2010126368A Generation method of carbon nanotube 有权
标题翻译：碳纳米管的生成方法
公开(公告)号：JP2010126368A
公开(公告)日：2010-06-10
申请号：JP2008299033
申请日：2008-11-25
申请人： Hitachi Zosen Corp , 日立造船株式会社
发明人： MIZUTA KENJI , SAIRA TOMONORI , YAMASHITA TOMOYA , YOSHIKAWA KENJI , YANO ATSUSHI
IPC分类号： C01B31/02
摘要： PROBLEM TO BE SOLVED: To provide a generation method of carbon nanotubes, which is inexpensive and results in high productivity.
SOLUTION: The generation method of carbon nanotubes comprises steps of: forming a base layer on a substrate; forming a catalyst layer containing a catalytic metal on the base layer; pulverizing the metal in the catalyst layer; and generating carbon nanotubes by a thermochemical vapor phase deposition method using the catalyst particles as nuclei. The method is characterized in that: the substrate contains SiO
2 by not less than 70 wt.% and Al
2 O
3 by not less than 15 wt.%, with the sum of SiO
2 and Al
2 O
3 of not less than 90 wt.%; and the base layer contains SiO
2 by not less than 40 wt.% and BaO from 2 to 40 wt.%.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种廉价并且导致高生产率的碳纳米管的生成方法。解决方案：碳纳米管的生成方法包括以下步骤：在基底上形成基底层; 在所述基底层上形成含有催化金属的催化剂层; 粉碎催化剂层中的金属; 以及使用催化剂粒子作为核的热化学气相沉积法生成碳纳米管。该方法的特征在于：基材含有不低于70重量％的SiO 2 ，并且Al 2 O 3 不小于 15重量％，SiO 2 和Al 2 O 3 之和不小于90重量％; 并且基层含有SiO 2 不少于40重量％，BaO含有2至40重量％。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2012041241A Cvd device for carbon nanotube formation 有权
标题翻译：用于碳纳米管形成的CVD装置
公开(公告)号：JP2012041241A
公开(公告)日：2012-03-01
申请号：JP2010185697
申请日：2010-08-23
申请人： Hitachi Zosen Corp , 日立造船株式会社
发明人： MIZUTA KENJI , YANO ATSUSHI
IPC分类号： C01B31/02 , C23C16/26
摘要： PROBLEM TO BE SOLVED: To provide a CVD device for carbon nanotube formation capable of unnecessitating cleaning of the inside of a reaction tube.SOLUTION: The CVD device is a thermal CVD device 1 for forming carbon nanotubes by thermal chemical vapor deposition method by supplying a raw material gas G to surfaces of substrates K horizontally arranged in a reaction tube 21. The CVD device includes a substrate holder body 11 capable of holding a plurality of substrates K above and below with a prescribed gap therebetween in the reaction tube 21, and a pedestal plate 19 on which the substrate holder body 11 is mounted. The inside of the reaction tube 21 is divided by the substrate holder body 11 holding the substrates K into a reaction space 7, to which the raw material gas G is supplied, between a lower substrate K surface and the pedestal plate 19 and between the substrates K, and a non-reaction space 8, to which the raw material gas G is not supplied, between the internal surface of the reaction tube 21 and both an upper substrate K surface and a pedestal plate 19 surface.
摘要翻译：要解决的问题：提供能够不必要地清洁反应管内部的碳纳米管形成用CVD装置。解决方案：CVD装置是一种用于通过热化学气相沉积方法形成碳纳米管的热CVD装置1，其通过将原料气体G供应到水平布置在反应管21中的基板K的表面。该CVD装置包括基板保持器本体11能够在反应管21中以规定的间隙保持上下多个基板K，并且安装有基板保持体11的基座板19。将反应管21的内部由保持基板K的基板保持体11分割成供给原料气体G的反应空间7，下基板K面与基板19之间以及基板 K和未反应空间G，未反应空间G在反应管21的内表面与上基板K表面和基板19表面之间。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2013155067A Substrate for generating carbon nanotube, and method for generating carbon nanotube using the same 审中-公开
标题翻译：用于生成碳纳米管的基板，以及使用该碳纳米管生成碳纳米管的方法
公开(公告)号：JP2013155067A
公开(公告)日：2013-08-15
申请号：JP2012016025
申请日：2012-01-30
申请人： Hitachi Zosen Corp , 日立造船株式会社
发明人： MIZUTA KENJI , TATSUMI HIROSHI , SUGIMOTO ITSUO
IPC分类号： C01B31/02 , B82Y40/00
摘要： PROBLEM TO BE SOLVED: To provide: a substrate for generating carbon nanotubes which can be produced in a short time at low cost, and can generate carbon nanotubes with high adhesiveness; and a method for generating carbon nanotubes using the same.SOLUTION: There is provided a substrate 1 for generating carbon nanotubes by a thermal CVD method on the surface side of a buffer layer 3 formed on the substrate body 2 via a catalyst metal 4, where the buffer layer 3 is composed of a surface layer part 3U with predetermined hardness on which a membrane comprising the catalyst metal 4 is formed, and a deep layer 3L with lower hardness than that of the surface layer 3U. The buffer layer is configured that the deep layer 3L is cured by heat of the thermal CVD method and makes the catalyst metal 4 subduct in the surface layer 3U to be laid down.
摘要翻译：要解决的问题：提供：可以以低成本在短时间内制造碳纳米管的基板，能够生成粘合性高的碳纳米管; 以及使用其制造碳纳米管的方法。本发明提供了一种用于通过催化剂金属4在形成于基体2上的缓冲层3的表面侧上通过热CVD法生成碳纳米管的基板1，其中，缓冲层3由具有预定硬度的表面层3U组成，其上形成有包含催化剂金属4的膜和比表面层3U低的硬度的深层3L。缓冲层被配置为通过热CVD法的热量使深层3L固化，并使表面层3U中的催化剂金属4的下端被放置。

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