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1. 发明专利

JP2011154037A Review sem 有权
标题翻译： REVIEW SEM
公开(公告)号：JP2011154037A
公开(公告)日：2011-08-11
申请号：JP2011081487
申请日：2011-04-01
申请人： Hitachi Ltd , Renesas Eastern Japan Semiconductor Inc , 株式会社ルネサス東日本セミコンダクタ , 株式会社日立製作所
发明人： NOZOE MARI , NISHIYAMA HIDETOSHI , HIJIKATA SHIGEAKI , WATANABE KENJI , ABE KOJI
IPC分类号： G01N23/225
摘要： PROBLEM TO BE SOLVED: To provide an inspection device and method for observing, inspecting, and distinguishing inspected and detected surface irregularities, shape defects, contaminations, further, electrical defects, or the like, quickly and precisely using an identical device by applying white light, laser beams, or electron beams to a substrate surface having a circuit pattern in a semiconductor device, or the like, and automatically enabling move to a position to be observed, capture of an image, and classification. SOLUTION: When specifying the position to be observed on a sample and applying electron beams for forming an image, based on the position information of a defect inspected and detected by other inspection device, observation of electrical defects that can be conducted with a potential contract by designating electron beam irradiation conditions, detectors, detection conditions, and the like, according to the types of defects to be observed. The acquired images are automatically classified by an image processing section, and the results are added to a defect file to be output. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种检查装置和方法，用于使用相同的装置快速且精确地观察，检查和区分检查和检测的表面凹凸，形状缺陷，污染，进一步的电气缺陷等将白光，激光束或电子束施加到具有半导体器件中的电路图案的基板表面等，并且自动地使能移动到要观察的位置，图像的捕获和分类。解决方案：当指定要在样品上观察的位置并施加用于形成图像的电子束时，基于由其他检查装置检查和检测的缺陷的位置信息，观察可以用根据要观察的缺陷的类型，通过指定电子束照射条件，检测器，检测条件等来进行潜在的合同。所获取的图像由图像处理部分自动分类，并且将结果添加到要输出的缺陷文件。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2009092673A Review sem 有权
标题翻译： REVIEW SEM
公开(公告)号：JP2009092673A
公开(公告)日：2009-04-30
申请号：JP2008332085
申请日：2008-12-26
申请人： Hitachi Ltd , Renesas Eastern Japan Semiconductor Inc , 株式会社ルネサス東日本セミコンダクタ , 株式会社日立製作所
发明人： NOZOE MARI , NISHIYAMA HIDETOSHI , HIJIKATA SHIGEAKI , WATANABE KENJI , ABE KOJI
IPC分类号： G01N23/225 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an inspection device and method for observing, inspecting, and distinguishing inspected and detected surface irregularities, shape defects, foreign matters, further, electrical defects, or the like, quickly and precisely using an identical device by applying white light, laser beams, and electron beams to a substrate surface having a circuit pattern in a semiconductor device, or the like, and to move to a position to be observed, to capture an image, and to automatically perform classification. SOLUTION: When specifying the position to be observed on a sample and applying electron beams for forming an image, based on the position information of a defect inspected and detected by other inspection apparatus, observation of electrical defects that can be conducted with a potential contract by designating electron beam irradiation conditions, detectors, detection conditions, and the like, according to the types of defects to be observed. The acquired images are automatically classified by an image processing section, and the results are added to a defect file to output. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于使用相同的装置快速且精确地观察，检查和区分检查和检测的表面凹凸，形状缺陷，异物，进一步的电气缺陷等的检查装置和方法通过将白光，激光束和电子束施加到具有半导体装置等中的电路图案的基板表面，并且移动到要观察的位置，以捕获图像，并且自动执行分类。解决方案：当指定要在样品上观察的位置并施加用于形成图像的电子束时，基于由其他检查装置检查和检测的缺陷的位置信息，观察可以用根据要观察的缺陷的类型，通过指定电子束照射条件，检测器，检测条件等来进行潜在的合同。所获取的图像由图像处理部分自动分类，并将结果添加到缺陷文件以输出。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2009110978A Ion beam device 有权
标题翻译：离子束装置
公开(公告)号：JP2009110978A
公开(公告)日：2009-05-21
申请号：JP2009034721
申请日：2009-02-18
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YAJIMA YUSUKE , UMEMURA KAORU , TAJI SHINICHI , MURAKOSHI HISAYA , SHINADA HIROYUKI , NOZOE MARI , TAKATO ATSUKO , HASEGAWA MASAKI , MAKINO HIROSHI
IPC分类号： H01J37/317 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an inspection device capable of consistently manufacturing a sample for appearance inspection of a semiconductor wafer in high speed and high resolution and for TEM observation or various analyses from an existing part of foreign matters or defects, with high positioning accuracy.
SOLUTION: A scanning electron microscope part (an SEM part) for wafer inspection 1 and an ion beam part 101 for a sample manufacturing process are provided together in the same inspection device, appearance inspection of the wafer 7 by the SEM part 1, and an extracting processing operation of the sample for TEM observation from an existing part of a defect (a foreign matter or a pattern defect) on the wafer 7 and various analyses based on the inspection result, are made enabled to consistently carry out on the same stage 8.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种检测装置，其能够以高速和高分辨率一贯地制造用于半导体晶片的外观检查的样品，并且可以从现有部分的异物或缺陷进行TEM观察或各种分析，定位精度高。解决方案：用于晶片检查的扫描电子显微镜部分（SEM部分）1和用于样品制造过程的离子束部分101一起设置在相同的检查装置中，通过SEM部分1对晶片7进行外观检查，并且从晶片7上的缺陷的现有部分（异物或图案缺陷）的现有部分进行TEM观察的提取处理操作以及基于检查结果的各种分析，能够一致地执行相同阶段8.版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2007003539A Circuit pattern inspection device 有权
标题翻译：电路图案检查装置
公开(公告)号：JP2007003539A
公开(公告)日：2007-01-11
申请号：JP2006238865
申请日：2006-09-04
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SHINADA HIROYUKI , TAKATO ATSUKO , NINOMIYA TAKANORI , SASAKI HIROKO , NOZOE MARI , MURAKOSHI HISAYA , NINOMIYA HIROSHI , KASAI YUJI
IPC分类号： G01B15/04 , G01N23/225 , H01J37/244 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To improve efficiency of condition setting, to shorten inspection time, and to improve reliability of an inspection, in a circuit pattern inspection device for inspecting, with an electron beam, a defect, foreign substance, residue, or the like of the same design pattern of a semiconductor device on a wafer in a manufacturing process of the semiconductor device.
SOLUTION: The circuit pattern inspection device independently has a detection signal processing circuit for forming a large current high-speed image for detecting the presence of the defect, and a detection signal processing circuit for forming an image in a specific narrow part detected by this defect detecting inspection. Alternatively, a first electron optical system for the defect detecting inspection and a second electron optical system only for review for observing a specific narrow part detected by the defect detecting inspection are stored in parallel in the same vacuum vessel. Alternatively, a first detector for the defect detecting inspection and a second detector only for review for observing a specific narrow part detected by the defect detecting inspection are disposed.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提高条件设定的效率，缩短检查时间，提高检查的可靠性，在电子束检查装置中，通过电子束检查缺陷，异物，残留物，在半导体器件的制造过程中晶片上的半导体器件的相同设计图案等。解决方案：电路图形检查装置独立地具有用于形成用于检测缺陷的存在的大电流高速图像的检测信号处理电路，以及用于形成检测到的特定窄部分中的图像的检测信号处理电路通过该缺陷检测检查。或者，用于缺陷检测检查的第一电子光学系统和仅用于观察由缺陷检测检查检测到的特定窄部分的检查的第二电子光学系统并行存储在同一真空容器中。或者，设置用于缺陷检测检查的第一检测器和仅用于观察由缺陷检测检查检测到的特定窄部分的检查的第二检测器。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2006040991A Method of evaluating semiconductor device and manufacturing method thereof 审中-公开
标题翻译：评估半导体器件的方法及其制造方法
公开(公告)号：JP2006040991A
公开(公告)日：2006-02-09
申请号：JP2004215183
申请日：2004-07-23
申请人： Elpida Memory Inc , Hitachi Ltd , エルピーダメモリ株式会社 , 株式会社日立製作所
发明人： TAKATO ATSUKO , NOZOE MARI , OYU SHIZUNORI
IPC分类号： H01L21/66 , H01L21/8238 , H01L21/8242 , H01L27/092 , H01L27/108
CPC分类号： H01L22/14 , G01R31/2653 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a technology which makes it possible to evaluate the leak characteristics distribution in a pn junction in the middle of manufacturing process of a semiconductor device having the pn junction, and to rapidly feed back the evaluation results to decision making of manufacturing process conditions. SOLUTION: For a wafer in the middle of manufacturing process, an electron beam is irradiated several times on the surface of the wafer whereon a plug is exposed at prescribed intervals under such a condition that the pn junction may be reverse-biased. Monitoring the charged potential of the surface of the plug, the electron beam irradiation conditions are changed to such ones that the charged potential may come within a desired range. Under such irradiation conditions, a secondary electron signal of a circuit pattern is obtained and the leak characteristics are evaluated. Since the charged potential in the pn junction is relaxed according to the size of the leakage current within intermittent time, the leak characteristics are evaluated from the brightness signal of a potential contrast image. Thus, by measuring the charged potential and making it within a desired range, the evaluation results reflect a state in actual operation and thereby the accuracy improves. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够在具有pn结的半导体器件的制造过程中评估pn结中的泄漏特性分布的技术，并且将评估结果快速反馈到制造工艺条件的决策。解决方案：对于在制造过程中间的晶片，在pn结可以被反向偏置的条件下，以规定的间隔将电子束照射在晶片的表面上，在该表面上暴露一个电极。监测插头表面的带电电位，将电子束照射条件改变为充电电位可能在期望范围内的条件。在这种照射条件下，获得电路图案的二次电子信号，并评价泄漏特性。由于根据间歇时间内的漏电流的大小使pn结中的充电电位松弛，所以根据潜在对比度图像的亮度信号来评价泄漏特性。因此，通过测量充电电位并使其在期望的范围内，评价结果反映实际操作中的状态，从而提高精度。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2006024921A Inspection method and device by charged particle beam 有权
标题翻译：通过充电颗粒束检查方法和装置
公开(公告)号：JP2006024921A
公开(公告)日：2006-01-26
申请号：JP2005176062
申请日：2005-06-16
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NISHIYAMA HIDETOSHI , NOZOE MARI , SHINADA HIROYUKI
IPC分类号： H01L21/66 , G01N23/225 , G01R31/302 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To provide an inspection method, capable of obtaining the distribution or the trend of the electric resistance and electric capacity of the entire surface of a substrate in a short time in inspection of defect in a substrate, such as a semiconductor device or liquid crystal. SOLUTION: A substrate to be inspected 9 such as a semiconductor wafer etc. is irradiated with charged particle beams 19, generated secondary electrons or back scattered electrons are captured into a detector 20, signals in proportion to the number of taken-in electrons are caused to occur, and an inspection image is formed on the basis of the signals. The current value and the irradiation energy of the charged particle beams, the electric field on the surface of the substrate to be inspected, the emission efficiency of the secondary electrons and back scattered electrons, etc., all taken into consideration, the electrical resistance and the electrical capacity are determined so as to match with those of the inspection image. By utilizing the charge by the electron beam irradiation, a defect is detected by performing inspection, by acquiring a potential contrast image in a state in which the difference in the electrical resistance value between the normal part and the defective part is increased sufficiently. Thus, by estimating the electrical resistance or the electrical capacity, and providing measures against abnormality at an early stage in the substrate manufacturing process, the ratio of defective substrates can be reduced and productivity can be increased. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种检查方法，能够在短时间内获得衬底的整个表面的电阻和电容的分布或趋势，以检查衬底中的缺陷，例如半导体器件或液晶。解决方案：对被检查的基板9（例如半导体晶片等）照射带电粒子束19，产生的二次电子或背散射电子被捕获到检测器20中，与被接收的数量成比例的信号导致发生电子，并且基于该信号形成检查图像。所考虑的电荷粒子束的电流值和照射能量，待检测基片的表面电场，二次电子和背散射电子的发射效率等都被考虑在内，电阻和电容量被确定为与检查图像的电容相匹配。通过利用电子束照射的电荷，通过在正常部分和缺陷部分之间的电阻值的差充分增加的状态下获取潜在的对比度图像，通过进行检查来检测缺陷。因此，通过估计电阻或电容，并且在基板制造工艺中提供早期的异常措施，可以降低不良基板的比例并提高生产率。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2005347281A Circuit pattern inspection device 有权
标题翻译：电路图案检查装置
公开(公告)号：JP2005347281A
公开(公告)日：2005-12-15
申请号：JP2005237080
申请日：2005-08-18
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TAKATO ATSUKO , MURAKOSHI HISAYA , SHINADA HIROYUKI , OSHIMA TAKU , NOZOE MARI , TOYAMA HIROSHI , IWABUCHI HIROKO , IIZUKA MASAMI
IPC分类号： H01L21/66 , H01J37/05 , H01J37/147 , H01J37/244 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To conduct high-precision and rapid inspection of a semiconductor in a desired contrast by efficiently and rapidly detecting secondary electrons, reflected electrons or both of them generated from a substrate, in a method for inspecting a defect, a foreign substance, a residue and the like of the same design pattern of a semiconductor device by using an electron beam.
SOLUTION: A detector for detecting electrons generated from a surface of the substrate is composed of divided detection elements, desired control according to a sample state is executed to orbits of the electrons, and a calculation process of an obtained output signal of each element is carried out.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了通过有效和快速地检测从基板产生的二次电子，反射电子或它们二者在所需对比度中进行高精度和快速检查，在用于检查缺陷的方法中，通过使用电子束的半导体器件的相同设计图案的异物，残留物等。解决方案：用于检测从衬底的表面产生的电子的检测器由分割的检测元件组成，根据样品状态的期望控制被执行到电子的轨道，并且所获得的输出信号的计算处理元素被执行。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2005251754A Inspecting method and inspecting device of semiconductor device 审中-公开
标题翻译：半导体器件的检查方法和检查器件
公开(公告)号：JP2005251754A
公开(公告)日：2005-09-15
申请号：JP2005105597
申请日：2005-04-01
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NOZOE MARI , SHINADA HIROYUKI , KURODA KATSUHIRO
IPC分类号： H01L21/66 , H01J37/22 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To improve the reliability of defect detection sensitivity and an inspection result by removing the noise of a high frequency component resulting from detailed unevenness produced in the case of processing a semiconductor device circuit pattern.
SOLUTION: An offset is applied to a focal position on a semiconductor device 28 by changing the diameter of an electron beam irradiated to the semiconductor device 28 by the operation of an objective lens 11, or regulating the height of the objective lens 11 or a test piece 14 in response to the unevenness generated in the case of processing the semiconductor device. Moreover, the pixel size is changed according to the unevenness of the semiconductor device processing surface at an image processing time in an image processing arithmetic unit 24.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过消除由于在处理半导体器件电路图案的情况下产生的详细不均匀而导致的高频分量的噪声，从而提高缺陷检测灵敏度的可靠性和检查结果。解决方案：通过改变通过物镜11的操作照射到半导体器件28的电子束的直径或调节物镜11的高度，将偏移施加到半导体器件28上的焦点位置或测试片14，以响应在处理半导体器件的情况下产生的不均匀性。此外，像素尺寸根据图像处理运算单元24中的图像处理时间的半导体器件处理表面的不均匀性而改变。（C）2005，JPO和NCIPI

9. 发明专利

JP2004319721A Standard wafer for testing semiconductor, method of testing semiconductor, and semiconductor testing device 有权
公开(公告)号：JP2004319721A
公开(公告)日：2004-11-11
申请号：JP2003110996
申请日：2003-04-16
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： MATSUI MIYAKO , NOZOE MARI
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a method of inspecting defects by which resistance values not only for defects exposed on the front surface of a wafer, but also for defects such as a defective conductivity path and the leakage formed inside the wafer can be rapidly and accurately estimated. SOLUTION: The sensitivity of the testing device is calibrated using a standard wafer of which resistance values of defects or a residual film thickness are already known. As the standard wafer, such a wafer that modified known resistance values are used for the resistance values of defects is fabricated. A well having several different capacitance values and a junction having several different resistance values are formed in the standard wafer. The sensitivity of the testing device is calibrated from an image of secondary electrons of the standard wafer. Non-destructive estimation of resistance values of defects detected in the test of a wafer to be tested, or of the residual film thickness is carried out based on the image of the secondary electrons of the standard wafer. Consequently, the semiconductor process development time and time required for improving an yield can be remarkably shortened, and the reliability and productivity of a semiconductor device can be enhanced. COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2007180035A Method and apparatus for inspecting circuit pattern 有权
标题翻译：检查电路图的方法和装置
公开(公告)号：JP2007180035A
公开(公告)日：2007-07-12
申请号：JP2007000916
申请日：2007-01-09
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NOZOE MARI , SHINADA HIROYUKI , SUGIYAMA KATSUYA , TAKATO ATSUKO , HIROI TAKASHI , YOSHIMURA KAZUSHI , SUGIMOTO ARITOSHI , YODA HARUO , KURODA KATSUHIRO , USAMI YASUTSUGU , TANAKA MAKI , KANEKO YUTAKA , TOYAMA HIROSHI , INO TADAO , YAJIMA YUSUKE , ANDO MASAAKI , MAEDA SHUNJI , KUBOTA HITOSHI
IPC分类号： H01J37/28 , G01N23/225 , H01J37/20 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To rapidly, stably, and accurately inspect a circuit pattern with an insulating material in an inspection method for comparing the secondary electron images of the defects, foreign matter, and residues of the circuit pattern produced on a substrate of a semiconductor device. SOLUTION: In this circuit pattern inspection method, an electron beam image is formed on a substrate 9 to be inspected before the potential of the member of the circuit pattern is varied by radiating a heavy-current electron beam 19 onto the substrate 9 at a high speed. Before the inspection, the substrate 9 is radiated with a second charged particle beam 104 in addition to the first electron beam for forming an image for inspection to stabilize the potential of the member. Also, secondary electron detection signals are digitized before transfer to acquire high quality electron beam images with high efficiency and high SN ratio. By this inspection method, the circuit pattern with the insulating material can be inspected. Since those defects and abnormalities that cannot be detected by the prior art produced in various substrate manufacturing processes such as the semiconductor device can be found, the fraction defective in the substrate manufacturing processes can be reduced and the reliability can be enhanced. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：在用于比较在基板上产生的缺陷，异物和电路图案的残留物的二次电子图像的检查方法中，使用绝缘材料快速，稳定且准确地检查电路图案的半导体器件。解决方案：在该电路图案检查方法中，在通过将大电流电子束19辐射到基板9上来改变电路图案的部件的电位之前，在要检查的基板9上形成电子束图像以高速度。在检查之前，除了用于形成用于检查的图像的第一电子束之外，用第二带电粒子束104照射基板9以稳定该部件的电位。此外，二次电子检测信号在传送之前被数字化，以获得高效率和高SN比的高质量电子束图像。通过该检查方法，可以检查具有绝缘材料的电路图案。由于可以发现在诸如半导体器件的各种衬底制造工艺中产生的现有技术无法检测到的这些缺陷和异常，可以降低衬底制造工艺中的缺陷部分，并且可以提高可靠性。版权所有（C）2007，JPO＆INPIT

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