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1. 发明专利

JP2005318651A Ccd type solid-state image pickup device and camera using the same 审中-公开
标题翻译： CCD类型的固态图像拾取装置和相机使用相机
公开(公告)号：JP2005318651A
公开(公告)日：2005-11-10
申请号：JP2005162415
申请日：2005-06-02
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： OZAKI TOSHIBUMI , NAKAI MASAAKI , TANAKA HARUHIKO , ONO HIDEYUKI , SATO AKIRA
IPC分类号： H01L27/148 , H04N5/335 , H04N5/341 , H04N5/357 , H04N5/369 , H04N5/3728 , H04N5/376
摘要： PROBLEM TO BE SOLVED: To provide a CCD type solid-state image pickup device which is easy to drive, improves convenience, is capable of reducing power consumption of a camera and reduces power consumption and noise.
SOLUTION: A CCD type solid-state image pickup device incorporates at least voltage generating circuits (11-17) for obtaining a plurality of or a single trigger pulse and two kinds of positive and negative power supplies from the outside to drive a vertical CCD, a horizontal CCD, a reset transistor and an output circuit using a predetermined pulse voltage and a DC voltage by inputting the trigger pulse.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供易于驱动，提高便利性的CCD型固体摄像装置，能够降低摄像机的功耗并降低功耗和噪声。解决方案：CCD型固态图像拾取装置至少包括用于获得多个或单个触发脉冲的电压产生电路（11-17）以及来自外部的两种正负电源以驱动垂直CCD，水平CCD，复位晶体管和使用预定脉冲电压的输出电路和通过输入触发脉冲的直流电压。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2002374458A Camera using ccd solid-state image pickup device 有权
标题翻译：相机使用CCD固态图像拾取器件
公开(公告)号：JP2002374458A
公开(公告)日：2002-12-26
申请号：JP2002119046
申请日：2002-04-22
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： OZAKI TOSHIBUMI , NAKAI MASAAKI , TANAKA HARUHIKO , ONO HIDEYUKI , SATO AKIRA
IPC分类号： H01L27/148 , H04N5/225 , H04N5/335 , H04N5/357 , H04N5/3722 , H04N5/3725 , H04N5/3728 , H04N5/376
摘要： PROBLEM TO BE SOLVED: To provide a camera using a CCD solid-state image pickup device which is easy to drive and use, can reduce power consumption of the camera, and has small power consumption and low noise.
SOLUTION: The CCD solid-state image pickup device has inside at least voltage generating circuits (11 to 17) which obtain a plurality of trigger pulses or a single trigger pulse and two power supplies of positive and negative polarities from the outside and drive a vertical CCD, a horizontal CCD, a rest transistor, and an output circuit with specific pulse voltages and a DC voltages by the input of the trigger pulse. Consequently, direct driving by the output of a timing generator is enabled, the number of the applied DC voltages decreases, the need to adjust the substrate voltage is eliminated, and hence the element becomes easy to use. Further, the power consumption of the camera can be reduced by lowering the source voltage of the timing generator. Furthermore, the power consumption and noise of an output circuit can be reduced by lowering the source voltage of the output circuit.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了提供使用易于驱动和使用的CCD固态图像拾取装置的相机，可以降低相机的功耗，并且具有小的功耗和低噪声。解决方案：CCD固态图像拾取装置至少具有从外部获得多个触发脉冲或单个触发脉冲和两个正极性和负极性的电源的电压产生电路（11至17），并驱动垂直 CCD，水平CCD，休眠晶体管，以及具有特定脉冲电压的输出电路和通过触发脉冲输入的直流电压。因此，能够通过定时发生器的输出进行直接驱动，所施加的直流电压的数量减少，消除了调整基板电压的需要，因此元件易于使用。此外，可以通过降低定时发生器的源电压来降低摄像机的功耗。此外，可以通过降低输出电路的源电压来降低输出电路的功耗和噪声。

3. 发明专利

JP2003037779A Ccd type solid-state image pickup element 有权
标题翻译： CCD型固态摄像元件
公开(公告)号：JP2003037779A
公开(公告)日：2003-02-07
申请号：JP2002119022
申请日：2002-04-22
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： OZAKI TOSHIBUMI , NAKAI MASAAKI , TANAKA HARUHIKO , ONO HIDEYUKI , SATO AKIRA
IPC分类号： H01L27/148 , H01L21/822 , H01L27/04 , H04N5/335 , H04N5/357 , H04N5/372 , H04N5/376
摘要： PROBLEM TO BE SOLVED: To provide a CCD type solid-state image pickup element that can be driven easily having user-friendliness, attain low power consumption of a camera, and with low power consumption and low noise.
SOLUTION: The CCD solid-state image pickup element at least incorporates voltage-generating circuits (11 to 17) that externally receive a plurality of trigger pulses or a single trigger pulse, positive and negative two power supplies and drive a vertical CCD, a horizontal CCD, a reset transistor(TR) and an output circuit with a prescribed pulse voltage and a DC voltage by input of a trigger pulse. Thus, the CCD type solid-state image pickup element can be driven directly by a timing generator and since the number of applied DC voltages is decreased with no adjustment of a substrate voltage is required and the image pickup element can be used easily. Furthermore, adopting a lower power supply voltage for the timing generator can reduce the power consumption of the camera. Moreover, adopting a lower power supply voltage of the output circuit can reduce the power consumption and noise of the output circuit.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种可以容易地驱动的具有用户友好性的CCD型固体摄像元件，获得相机的低功耗，并且具有低功耗和低噪声。解决方案：CCD固态摄像元件至少包括外部接收多个触发脉冲或单个触发脉冲的电压产生电路（11至17），正负两个电源并驱动垂直CCD，水平 CCD，复位晶体管（TR）和具有规定脉冲电压的输出电路和通过触发脉冲输入的直流电压。因此，CCD型固态摄像元件可以由定时发生器直接驱动，并且由于不需要调整衬底电压而降低施加的直流电压的数量，并且可以容易地使用图像拾取元件。此外，为定时发生器采用较低的电源电压可以降低摄像机的功耗。此外，采用输出电路的较低电源电压可以降低输出电路的功耗和噪声。

4. 发明专利

JP2001237319A SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD FOR DESIGNING THE SAME 失效
公开(公告)号：JP2001237319A
公开(公告)日：2001-08-31
申请号：JP2000047113
申请日：2000-02-24
申请人： HITACHI LTD , HITACHI ULSI SYS CO LTD
发明人： UMEMOTO YASUNARI , OSONE YASUO , NAKAZATO NORIO , KUSANO CHUSHIRO , ONO HIDEYUKI , FUJITA TAKAHIRO , YAMASHITA KIICHI
IPC分类号： H01L21/82 , G06F17/50
摘要： PROBLEM TO BE SOLVED: To provide a layout designing method by which the intervals among transistors can be decided relatively easily and, at the same time, can make the temperature distribution in a chip relatively uniform in a high-output power transistor, which is constituted by connecting a plurality of transistors in parallel with each other and operated as one transistor. SOLUTION: In the semiconductor integrated circuit provided with an output circuit composed of a plurality of transistors (Q1-Qn) arranged on one semiconductor chip in a matrix-form, a plurality of blocks is designed in such a way that the transistors on the same line are divided into groups of a prescribed number of transistors each and, in each block, the transistors are arranged at a regular interval (L1). In addition, the interval (L2) between the blocks is made larger than that between the transistors in each block.

5. 发明专利

JPH104321A ELECTRONIC DEVICE 失效
公开(公告)号：JPH104321A
公开(公告)日：1998-01-06
申请号：JP15368096
申请日：1996-06-14
申请人： HITACHI LTD
发明人： ONO HIDEYUKI
IPC分类号： H03F3/24 , H03F1/02 , H04B1/40
摘要： PROBLEM TO BE SOLVED: To reduce the power consumption in a low output power mode by setting the drain current of a 1st FET set nearest an antenna at a level lower than the prescribed value in a non-signal transmission mode. SOLUTION: To always keep the current consumption (idling current IdsO) flowing to the drain of a 1st FET in a non-signal transmission mode at a level lower than the current consumption in a largest power output mode, it is required make the current IdSO not exceed the current consumption least necessary for output of the largest power to be transmitted from an antenna. Thereby, the current IdSO is shown as IdsO

6. 发明专利

JPH08203927A FIELD EFFECT COMPOUND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08203927A
公开(公告)日：1996-08-09
申请号：JP1124295
申请日：1995-01-27
申请人： HITACHI LTD
发明人： ICHIKAWA HIROICHI , UMEMOTO YASUNARI , MORI MITSUHIRO , ONO HIDEYUKI
IPC分类号： H01L29/812 , H01L21/338 , H01L29/778
摘要： PURPOSE: To contrive a reduction in the source resistance of a field effect compound semiconductor device and a reduction in a temperature change of a threshold voltage in the device. CONSTITUTION: An N-type 3-5 compound semiconductor layer is used as a channel layer 3. A metal film having an internal stress with tensile properties is used as the material for a gate electrode and the direction of the gate electrode is taken in the orientation [01-1] on the GaAs face (100). Moreover, the layer 3 is provided at a position which is off from the position of the peak of a negative piezoelectric charge distribution which is generated in the 3-5 compound semiconductor layer coming into contact with the lower part of the gate electrode 5.

7. 发明专利

JPH0821704B2 失效
公开(公告)号：JPH0821704B2
公开(公告)日：1996-03-04
申请号：JP4825686
申请日：1986-03-07
申请人： HITACHI LTD
发明人： ONO HIDEYUKI , ANDO HARUHISA , TSUKADA TOSHIRO
IPC分类号： H01L27/14 , H01L27/146 , H01L27/148 , H04N5/335 , H04N5/341 , H04N5/357 , H04N5/372 , H04N5/374

8. 发明专利

JPH05153446A SOLID-STATE IMAGE PICKUP ELEMENT 失效
公开(公告)号：JPH05153446A
公开(公告)日：1993-06-18
申请号：JP31597891
申请日：1991-11-29
申请人： HITACHI LTD
发明人： NAKAI MASAAKI , OZAKI TOSHIBUMI , TANAKA HARUHIKO , ONO HIDEYUKI , SATO AKIRA
IPC分类号： G02B3/00 , H04N5/225 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/369 , H04N5/3728 , H04N5/374
摘要： PURPOSE:To suppress smear noise caused by a charge generated by a tilted light in existence at the surrounding of a micro lens. CONSTITUTION:A conventional micro lens consists of a two-layer micro lens (a light transmission film 37 is used for a micro lens lower layer and a micro lens conventionally used is employed for the upper layer) 39. A tilted light around the 2-layer micro lens 39 is not collected because no curvature is in existence in the 2-layer micro lens 39. Thus, smear noise due to the tilted light of the solid-state image pickup element provided with the micro lens is suppressed.

9. 发明专利

JPH03101484A DRIVE METHOD FOR SOLID-STATE IMAGE PICKUP ELEMENT 失效
公开(公告)号：JPH03101484A
公开(公告)日：1991-04-26
申请号：JP23703189
申请日：1989-09-14
申请人： HITACHI LTD
发明人： OZAKI TOSHIBUMI , HIRAIWA ATSUSHI , TANAKA HARUHIKO , ONO HIDEYUKI , TOKUMASU KAZUYA , AKIMOTO HAJIME
IPC分类号： H01L21/339 , H01L29/762 , H04N5/335 , H04N5/341 , H04N5/353 , H04N5/355 , H04N5/361 , H04N5/3722 , H04N5/3728
摘要： PURPOSE:To increase the transfer maximum charge quantity per unit area of a vertical CCD by decreasing a voltage applied to an insulation film between polysilicon electrodes and making a gate oxide film of the vertical CCD thin. CONSTITUTION:A voltage applied to an insulation film between vertical CCD polysilicon electrodes is (VH-VM) or (VM-VL). The voltage amplitude (VM-VL) required for charge transfer in the vertical CCD and the voltage amplitude (VH-VM) required for signal readout from a photodiode to the vertical CCD are nearly equal to each other and the voltage applied to the insulation film between the electrodes is nearly 1/2 of a conventional (VH-VL). As a result, when the permissible electric field strength in the insulation film between the electrodes is constant, since the insulation film between the electrodes is nearly halved, the thickness of the vertical CCD gate oxide film formed simultaneously to the insulation film between the electrodes is nearly halved, the transfer maximum charge quantity per unit area of the vertical CCD is increased.

10. 发明专利

JPH01164179A SOLID-STATE IMAGE PICKUP DEVICE 失效
公开(公告)号：JPH01164179A
公开(公告)日：1989-06-28
申请号：JP32159087
申请日：1987-12-21
申请人： HITACHI LTD
发明人： ANDO HARUHISA , ONO HIDEYUKI , SUZUKI TOSHIKI , TAKEMOTO KAYAO
IPC分类号： H01L27/148 , H01L27/14 , H04N5/335 , H04N5/341 , H04N5/345 , H04N5/369 , H04N5/3722 , H04N5/3725 , H04N5/3728 , H04N5/374
摘要： PURPOSE:To attain a framing having an excellent dynamic resolution by driving only the area of one part of either a vertical CCD(Charge Coupled Device) register or a horizontal CCD register and limiting a signal reading area. CONSTITUTION:After a resetting switch 23 is conducted previously in a vertical retrace line period, and an initialization is executed, a shift register 21 is operated, and a diode connecting transistor 22 for the prescribed number of steps is conducted. Once the diode connecting transistor 22 is conducted, high voltage is held at the gate of a vertical selecting switch 19, which is the source edge of the transistor 22. Next, a signal divided in a vertical direction can be obtained by conducting a photo gate 2 in a vertical scanning period and impressing a driving pulse to a vertical clock gate for the prescribed number of steps. Thus, since the plural numbers of the times of a signal reading can be executed in one field period, the framing with the excellent dynamic resolution can be attained.

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