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1. 发明专利

JP2009049041A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2009049041A
公开(公告)日：2009-03-05
申请号：JP2007210876
申请日：2007-08-13
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： MATSUMOTO KATSUMI , YASUDA KOZO , KIMURA TAIICHI , KAITO TAKUO , ITOGA TOSHIHIKO , KAGEYAMA HIROSHI
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/8234 , H01L21/8238 , H01L27/08 , H01L27/088 , H01L27/092
CPC分类号： H01L29/78618 , G02F1/13454 , G02F2001/13685 , G02F2202/104 , H01L27/12 , H01L29/78645 , H01L29/78696
摘要： PROBLEM TO BE SOLVED: To suppress the leakage current of a TFT element in a semiconductor device having the TFT element using a polycrystalline semiconductor. SOLUTION: The semiconductor device has the TFT element in which a semiconductor layer comprising the polycrystalline semiconductor, a gate insulating film, and a gate electrode are stacked on an insulating substrate in this order, and the gate electrode and the semiconductor layer intersect in three dimensions. The semiconductor layer has a first region having such a shape that the semiconductor layer is superimposed on the gate electrode in a plane view, and a second and third regions which are present across the first region and are in contact with the first region. The second region of the semiconductor layer has a first impurity diffusion region which has a function as a source of the TFT element and is in contact with the first region, and a second impurity diffusion region which is of a conductivity type opposite to the conductivity type of the first impurity diffusion region and is in contact with the first region. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了抑制具有使用多晶半导体的TFT元件的半导体器件中的TFT元件的漏电流。解决方案：半导体器件具有其中包括多晶半导体的半导体层，栅极绝缘膜和栅电极的TFT元件依次堆叠在绝缘基板上，并且栅电极和半导体层相交在三维方面。半导体层具有第一区域，其具有半导体层在平面图中叠加在栅电极上的形状，以及存在于第一区域并与第一区域接触的第二和第三区域。半导体层的第二区域具有第一杂质扩散区域，其具有作为TFT元件的源极并与第一区域接触的功能，以及与导电类型相反的导电类型的第二杂质扩散区域并且与第一区域接触。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2004253520A Display apparatus and method of manufacturing same 有权
公开(公告)号：JP2004253520A
公开(公告)日：2004-09-09
申请号：JP2003040812
申请日：2003-02-19
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： KAMO NAOHIRO , ITOGA TOSHIHIKO , KAITO TAKUO , OKURA OSAMU
IPC分类号： G02F1/1368 , C23C16/455 , H01L21/316 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/49 , H01L29/786 , H01L51/50 , H05B33/14
CPC分类号： H01L29/4908 , H01L27/12 , H01L27/1214
摘要： PROBLEM TO BE SOLVED: To avoid a situation that an interface level of an insulation film for with respect to a polysilicon layer becomes high and that the fixed electric charges in the insulation film increase, in a thin film transistor. SOLUTION: In the display apparatus comprising a thin film transistor over an insulating substrate, the thin film transistor comprises a semiconductor layer, a gate electrode, and a gate insulating film provided between the semiconductor layer and the gate electrode, and the gate insulating film includes at least single deposition film deposited by the deposition method. Moreover, the gate insulating film has distribution in the concentration of carbon in the area nearer to the semiconductor layer which becomes smaller than that in the side far from the semiconductor layer without any other deposition film deposited by the deposition method for the semiconductor layer. COPYRIGHT: (C)2004,JPO&NCIPI

3. 发明专利

JP2009260044A Display device 审中-公开
标题翻译：显示设备
公开(公告)号：JP2009260044A
公开(公告)日：2009-11-05
申请号：JP2008107442
申请日：2008-04-17
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： YAMAKAWA ICHIRO , HORIKOSHI KAZUHIKO , YONAMOTO YOSHIKI , AKAMATSU NAOTOSHI , ITOGA TOSHIHIKO , KAITO TAKUO , KAMO NAOHIRO , KIN KIICHI , SAKAI TAKESHI , OKI NOBORU
IPC分类号： H01L29/786 , G02F1/1362 , G09F9/30 , H01L21/336
CPC分类号： H01L29/78609 , H01L29/66765 , H01L29/78669 , H01L31/02161
摘要： PROBLEM TO BE SOLVED: To provide a display device using a TFT serving as a switching element, in which image deterioration of the display device is prevented by suppressing a photo leakage current to be small, and in particular, in which a density of defects which become positive fixed charges by light present in a protective insulating film of the TFT is defined to suppress the photo leakage current. SOLUTION: In the display device (for example, a liquid crystal display device) using the TFT as the switching element, the TFT includes an insulating film, an amorphous silicon film, a drain electrode and a source electrode, and a protective insulating film laminated on a gate electrode covering a portion of a surface of an insulating substrate in the stated order, in which the protective insulating film includes a defect which becomes a positive fixed charge under light irradiation. The relation between a surface density of the defects which become the positive fixed charges under the light irradiation and the photo leakage current is shown in Fig. The surface density of the defects in the protective insulating film which become the positive fixed charges under the light irradiation is preferably 2.5×10 10 cm -2 or more to 4.0×10 10 cm -2 or less. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种使用TFT作为开关元件的显示装置，其中通过抑制光漏电流来防止显示装置的图像劣化，特别地，其中密度通过存在于TFT的保护绝缘膜中的光成为正固定电荷的缺陷被限定为抑制光漏电流。解决方案：在使用TFT作为开关元件的显示装置（例如，液晶显示装置）中，TFT包括绝缘膜，非晶硅膜，漏电极和源极，以及保护绝缘膜层叠在覆盖绝缘基板表面的一部分的栅电极上，其中保护绝缘膜包括在光照射下变为正固定电荷的缺陷。在光照射下成为正固定电荷的缺陷的表面密度与光漏电流之间的关系如图1所示。在光照射下成为正固定电荷的保护绝缘膜中的缺陷的表面密度优选为2.5×10 10 -2 或更高至4.0×10 10 cm -2 以下。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2007142167A Display device and its manufacturing method 审中-公开
标题翻译：显示设备及其制造方法
公开(公告)号：JP2007142167A
公开(公告)日：2007-06-07
申请号：JP2005334164
申请日：2005-11-18
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： KIMURA TAIICHI , ITOGA TOSHIHIKO , NODA TAKASHI
IPC分类号： H01L21/20 , G02F1/1368 , H01L21/268 , H01L21/336 , H01L29/786
CPC分类号： H01L27/1281 , H01L27/1285 , H01L27/1296
摘要： PROBLEM TO BE SOLVED: To obtain a substrate crystallized in a strip form for a display device which can minimize peel off of a semiconductor by suppressing aggregation upon crystallization by irradiation of a continuous oscillation laser. SOLUTION: A silicon nitride film 102 and an silicon oxide film 103 are formed as base films on a glass substrate 101 having a raised part, and a silicon base film 107 is formed on the substrate. A bank 200 is positioned on the lower layer of the silicon base film 107 to be intersected by a scan direction S of a laser. Aggregations 304 generated by the laser scan stop at positions going beyond the bank 200, and thereafter a strip-crystallized silicon film 302 is normally formed. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：为了获得通过在连续振荡激光的照射下结晶化而抑制聚集的显示装置得到可以最小化半导体剥离的带状结晶的基板。解决方案：在具有凸部的玻璃基板101上形成氮化硅膜102和氧化硅膜103作为基膜，在基板上形成硅基膜107。存储体200位于硅基膜107的下层，与激光的扫描方向S相交。通过激光扫描生成的聚集304在超过堤200的位置处停止，此后通常形成条状结晶硅膜302。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2007142059A Method of manufacturing display device 审中-公开
标题翻译：制造显示装置的方法
公开(公告)号：JP2007142059A
公开(公告)日：2007-06-07
申请号：JP2005332253
申请日：2005-11-17
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： KAITO TAKUO , KAMO NAOHIRO , ITOGA TOSHIHIKO
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/20 , H01L21/26 , H01L21/336
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a display device equipped with a low-cost thin-film transistor and with uniform characteristics. SOLUTION: This is a method of manufacturing a display device, having a thin-film transistor that uses a polycrystalline semiconductor layer on an insulating substrate. The method includes an amorphous semiconductor layer forming process wherein an amorphous semiconductor layer is formed on the insulating substrate; a metal layer forming process, wherein a metal layer is so formed as to coat the amorphous semiconductor layer, later than the amorphous semiconductor layer forming process; and a crystallization process, wherein by conducting ramp anealing on the amorphous semiconductor layer and on the metal layer, before patterning the metal layer, the amorphous semiconductor layer is crystallized into the polycrystalline semiconductor layer. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造具有低成本薄膜晶体管并具有均匀特性的显示装置的方法。解决方案：这是制造显示装置的方法，其具有在绝缘基板上使用多晶半导体层的薄膜晶体管。该方法包括在绝缘基板上形成非晶半导体层的非晶半导体层形成工艺; 金属层形成工艺，其中在非晶半导体层形成工艺之后，金属层形成为涂覆非晶半导体层; 和结晶工艺，其中在图案化金属层之前，通过在非晶半导体层和金属层上导电斜面吸引，非晶半导体层被结晶化成多晶半导体层。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2007134648A Display unit and its manufacturing method 有权
标题翻译：显示单元及其制造方法
公开(公告)号：JP2007134648A
公开(公告)日：2007-05-31
申请号：JP2005328865
申请日：2005-11-14
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： KAITO TAKUO , KAMO NAOHIRO , ITOGA TOSHIHIKO
IPC分类号： H01L29/786 , H01L21/20 , H01L21/265 , H01L27/08
CPC分类号： H01L27/1285 , G02F1/13454
摘要： PROBLEM TO BE SOLVED: To provide a display unit which allows thin film transistor circuits with different properties to be mounted on a substrate without additional man-hours, and to provide a method for manufacturing the unit. SOLUTION: A precursor film 304 with an a-Si layer or a fine crystal p-Si layer is formed on a glass substrate 301 having a foundation layer with stacked SiN 302 and SiO 2 film 303, and then implantation is performed there. At this time, the accelerating voltage and dose amount are controlled so that an adequate amount of dopant can be implanted in the film of the precursor film. When the precursor film 304 fuses for laser beam irradiation, the dopant implanted in the precursor film is activated and taken in. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种显示单元，其允许具有不同性质的薄膜晶体管电路安装在基板上，而无需额外的工时，并提供一种制造该单元的方法。解决方案：具有a-Si层或精细晶体p-Si层的前体膜304形成在具有层叠SiN 302和SiO 2 膜303的基础层的玻璃基板301上，然后在那里进行植入。此时，控制加速电压和剂量，使得可以在前体膜的膜中注入足够量的掺杂剂。当前体膜304熔化用于激光束照射时，注入到前体膜中的掺杂剂被激活并进入。（C）2007，JPO和INPIT

7. 发明专利

JP2007088364A Display device 审中-公开
标题翻译：显示设备
公开(公告)号：JP2007088364A
公开(公告)日：2007-04-05
申请号：JP2005277985
申请日：2005-09-26
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： MAKI MASAHIRO , SATO HIDEO , NAKAO TAKAYUKI , ITOGA TOSHIHIKO
IPC分类号： H01L21/336 , G02F1/1368 , G09F9/30 , H01L21/20 , H01L29/786
CPC分类号： H01L29/04 , H01L27/1285 , H01L27/13 , H01L29/78645
摘要： PROBLEM TO BE SOLVED: To provide a display device which enables high density packaging by reducing the area of a driving circuit on an active matrix substrate. SOLUTION: A semiconductor film existing in the border region between the semiconductor film of roughly belt-shaped crystal and semiconductor film other than this is utilized as an interconnect line and/or a resistor connected to a thin film transistor using the semiconductor film of the roughly belt-shaped crystal. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种通过减少有源矩阵基板上的驱动电路的面积来实现高密度封装的显示装置。解决方案：使用存在于大致带状晶体的半导体膜与其之外的半导体膜之间的边界区域中的半导体膜作为互连线和/或连接到使用半导体膜的薄膜晶体管的电阻器的大致带状晶体。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2008085053A Manufacturing method of display unit, and display unit 审中-公开
标题翻译：显示单元和显示单元的制造方法
公开(公告)号：JP2008085053A
公开(公告)日：2008-04-10
申请号：JP2006262884
申请日：2006-09-27
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： MIYAKE HIDEKAZU , ITOGA TOSHIHIKO , OUE EIJI , NODA TAKASHI
IPC分类号： H01L21/336 , H01L21/20 , H01L29/786
CPC分类号： H01L21/268 , H01L21/02532 , H01L21/02675 , H01L27/1233 , H01L27/1237 , H01L27/1251 , H01L27/1285 , H01L29/04 , H01L29/0657 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678
摘要： PROBLEM TO BE SOLVED: To improve characteristic of an SELAX-TFT and improve throughput of ELA crystallization.
SOLUTION: The film thickness of an amorphous semiconductor film before crystallization in formation of a thin film transistor using a pseudo-monocrystal semiconductor 113 and a thin film transistor using a granular polycrystalline semiconductor 112 on the same substrate 101 is made larger in the pseudo-monocrystal semiconductor portion 205 than in the polycrystalline semiconductor portion 206.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提高SELAX-TFT的特性，提高ELA结晶的产量。解决方案：在使用伪单晶半导体113形成薄膜晶体管的结晶之前的非晶半导体膜的膜厚度和在同一基板101上使用粒状多晶半导体112的薄膜晶体管的膜厚变得更大伪单晶半导体部分205比在多晶半导体部分206中更好。（C）2008，JPO＆INPIT

9. 发明专利

JP2007142027A Manufacturing method of indicating device 审中-公开
标题翻译：制造装置的制造方法
公开(公告)号：JP2007142027A
公开(公告)日：2007-06-07
申请号：JP2005331606
申请日：2005-11-16
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： NODA TAKASHI , KAMO NAOHIRO , ITOGA TOSHIHIKO , HATANO MUTSUKO , TAI MITSUHARU
IPC分类号： H01L21/20 , G02F1/136 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide an indicating device improved in yield by incorporating a thin film transistor or the like into a high quality and homogeneous high-quality polycrystal silicon (strip crystal) layer obtained by suppressing the generation of flocculation, in the formation of the high-quality polycrystal silicon (strip crystal) layer employing continuous oscillation laser. SOLUTION: The manufacturing method of indicating device comprises a cap layer forming process for forming a cap layer 301 with the thickness not less than 1.6 nm on the surface of an amorphous or polycrystal semiconductor film (silicon base film ) 104, deposited on a base film consisting of a nitrated silicon film 102 and an oxide silicon film 103 on a glass substrate 101; and a strip crystal forming process for forming the strip crystal on the semiconductor film 104, by scanning while irradiating continuous oscillation laser 105 on the semiconductor film 104 through the cap layer 301. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了通过将薄膜晶体管等掺入到通过抑制絮凝的产生而获得的高质量且均匀的高质量多晶硅（带状晶体）层中来提供提高产量的指示装置，使用连续振荡激光器形成高品质多晶硅（带状晶体）层。解决方案：指示装置的制造方法包括在非晶或多晶半导体膜（硅基膜）104的表面上形成厚度不小于1.6nm的覆盖层301的盖层形成工艺，其沉积在由玻璃基板101上的硝化硅膜102和氧化硅膜103构成的基膜; 以及用于在半导体膜104上形成带状晶体的带状晶体形成工艺，通过扫描同时通过盖层301在半导体膜104上照射连续振荡激光器105进行扫描。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2007095726A Manufacturing method of display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：JP2007095726A
公开(公告)日：2007-04-12
申请号：JP2005279215
申请日：2005-09-27
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： KAITO TAKUO , OUE EIJI , ITOGA TOSHIHIKO
IPC分类号： H01L29/786 , G02F1/1368 , G09F9/00 , H01L21/20 , H01L21/336
CPC分类号： H01L27/1285 , H01L21/2026 , H01L27/1296 , H01L29/04
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a display device with which yield drop of the display device due to flocculation occurring in pseudo single crystallization of a silicon film is reduced. SOLUTION: The manufacturing method of the display device comprises a semiconductor film reforming process for irradiating a semiconductor film in a first state with a laser, and reforming it into a semiconductor film in a second state which has elongated crystal grains; a flocculation detecting process for detecting flocculation of the semiconductor film which occurs in the semiconductor film reforming process; and a defect judging process for judging it to be defective when a position of flocculation exists in a prescribed region, and judging it to be non-defective when it exists outside the prescribed region. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种显示装置的制造方法，其中由于在硅膜的伪单晶中发生的絮凝导致的显示装置的产量下降降低。解决方案：显示装置的制造方法包括半导体膜重整工艺，用于在第一状态下用激光照射半导体膜，并在具有细长晶粒的第二状态下将其重整成半导体膜; 用于检测在半导体膜重整工艺中发生的半导体膜的絮凝的絮凝检测过程; 以及当在规定区域中存在絮凝位置时将其判断为有缺陷的缺陷判断处理，并且当其存在于规定区域之外时判断为无缺陷。版权所有（C）2007，JPO＆INPIT

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