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1. 发明专利

JP2011054897A Thin film transistor and display device using the same 审中-公开
标题翻译：薄膜晶体管和使用其的显示器件
公开(公告)号：JP2011054897A
公开(公告)日：2011-03-17
申请号：JP2009204943
申请日：2009-09-04
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： HORIKOSHI KAZUHIKO , IWANAMI KEN , ITOGA TOSHIHIKO , WATABE KAZUFUMI , MATSUI SHUNICHIRO , NAKATA KEIJI
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/336 , H01L51/50
摘要： PROBLEM TO BE SOLVED: To provide a thin-film transistor capable of reducing a defect generated in a film of the thin-film transistor and also reducing variations in a defect generation position in a substrate plane, and to provide a display device using the same. SOLUTION: The thin-film transistor includes a semiconductor layer where a drain region and a source region are formed, a silicon oxide film layer formed under the semiconductor layer and preventing an impurity from being mixed with the semiconductor layer, and a silicon nitride film layer formed under the silicon oxide film layer and preventing an impurity from being mixed with the semiconductor layer together with the silicon oxide film layer, wherein the silicon oxide film layer includes a first silicon oxide film interface layer formed over the silicon nitride film layer, a silicon oxide film bulk layer formed over the first silicon oxide film, and a second silicon oxide film interface layer formed over the silicon oxide film bulk layer, the first silicon oxide film interface layer includes a silicon oxide nitride film, and the second silicon oxide film interface layer includes an oxygen-deficit silicon oxide nitride film. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种薄膜晶体管，其能够减少在薄膜晶体管的膜中产生的缺陷，并且还减少了在基板平面中的缺陷产生位置的变化，并且提供了一种显示装置使用相同解决方案：薄膜晶体管包括形成漏极区域和源极区域的半导体层，形成在半导体层下方并防止杂质与半导体层混合的氧化硅膜层，以及硅氮化物膜层，形成在所述氧化硅膜层下方，并且防止杂质与所述氧化硅膜层一起与所述半导体层混合，其中所述氧化硅膜层包括在所述氮化硅膜层上形成的第一氧化硅膜界面层形成在所述第一氧化硅膜上的氧化硅膜本体层和在所述氧化硅膜本体层上形成的第二氧化硅膜界面层，所述第一氧化硅膜界面层包括氧化硅氮化物膜，所述第二硅氧化膜界面层包括缺氧氧化硅氮化物膜。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2010256517A Active matrix display device 有权
标题翻译：主动矩阵显示设备
公开(公告)号：JP2010256517A
公开(公告)日：2010-11-11
申请号：JP2009104953
申请日：2009-04-23
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： YAMAKAWA ICHIRO , HORIKOSHI KAZUHIKO , AKAMATSU NAOTOSHI , GOTO JUN , ASUMA HIROAKI
IPC分类号： G09F9/30 , G02F1/1362
CPC分类号： G02F1/136286 , G02F1/136213 , G02F1/136227
摘要： PROBLEM TO BE SOLVED: To provide a technology for preventing current leakage of a charge holding capacitor which constitutes a pixel of a display device so as to prevent deterioration of display image quality of the display device.
SOLUTION: The display device includes: a first contact hole 7 to which a polysilicon 3 and a pad electrode 8 are connected; a second contact hole 12 opening in an organic insulating film; a third contact hole 15 to which the pad electrode 8 and a pixel electrode 16 are connected; and a common electrode 13. In plane view of them, the first contact hole 7 and the third contact hole 15 exist inside the second contact hole 12, the first contact hole 7 has no overlapping part with the third contact hole 15, the third contact hole 15, the first contact hole 7, an end of the second contact hole 12, and the common electrode 13 are arranged in this order in the direction perpendicular to the gate line 5, and the end of the second contact hole 12 exists outside the pad electrode 8 in the direction parallel to the gate line 5.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种防止构成显示装置的像素的电荷保持电容器的电流泄漏的技术，以防止显示装置的显示图像质量的劣化。解决方案：显示装置包括：多晶硅3和焊盘电极8连接到的第一接触孔7; 在有机绝缘膜中开口的第二接触孔12; 焊盘电极8和像素电极16连接的第三接触孔15; 在它们的平面图中，第一接触孔7和第三接触孔15存在于第二接触孔12的内部，第一接触孔7与第三接触孔15没有重叠部分，第三接触孔15，第一接触孔7，第二接触孔12的端部和公共电极13沿垂直于栅极线5的方向依次排列，第二接触孔12的端部存在于焊盘电极8在平行于栅极线5的方向上。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2009260044A Display device 审中-公开
标题翻译：显示设备
公开(公告)号：JP2009260044A
公开(公告)日：2009-11-05
申请号：JP2008107442
申请日：2008-04-17
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： YAMAKAWA ICHIRO , HORIKOSHI KAZUHIKO , YONAMOTO YOSHIKI , AKAMATSU NAOTOSHI , ITOGA TOSHIHIKO , KAITO TAKUO , KAMO NAOHIRO , KIN KIICHI , SAKAI TAKESHI , OKI NOBORU
IPC分类号： H01L29/786 , G02F1/1362 , G09F9/30 , H01L21/336
CPC分类号： H01L29/78609 , H01L29/66765 , H01L29/78669 , H01L31/02161
摘要： PROBLEM TO BE SOLVED: To provide a display device using a TFT serving as a switching element, in which image deterioration of the display device is prevented by suppressing a photo leakage current to be small, and in particular, in which a density of defects which become positive fixed charges by light present in a protective insulating film of the TFT is defined to suppress the photo leakage current. SOLUTION: In the display device (for example, a liquid crystal display device) using the TFT as the switching element, the TFT includes an insulating film, an amorphous silicon film, a drain electrode and a source electrode, and a protective insulating film laminated on a gate electrode covering a portion of a surface of an insulating substrate in the stated order, in which the protective insulating film includes a defect which becomes a positive fixed charge under light irradiation. The relation between a surface density of the defects which become the positive fixed charges under the light irradiation and the photo leakage current is shown in Fig. The surface density of the defects in the protective insulating film which become the positive fixed charges under the light irradiation is preferably 2.5×10 10 cm -2 or more to 4.0×10 10 cm -2 or less. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种使用TFT作为开关元件的显示装置，其中通过抑制光漏电流来防止显示装置的图像劣化，特别地，其中密度通过存在于TFT的保护绝缘膜中的光成为正固定电荷的缺陷被限定为抑制光漏电流。解决方案：在使用TFT作为开关元件的显示装置（例如，液晶显示装置）中，TFT包括绝缘膜，非晶硅膜，漏电极和源极，以及保护绝缘膜层叠在覆盖绝缘基板表面的一部分的栅电极上，其中保护绝缘膜包括在光照射下变为正固定电荷的缺陷。在光照射下成为正固定电荷的缺陷的表面密度与光漏电流之间的关系如图1所示。在光照射下成为正固定电荷的保护绝缘膜中的缺陷的表面密度优选为2.5×10 10 -2 或更高至4.0×10 10 cm -2 以下。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2004138912A Display unit and method for manufacturing the same 审中-公开
公开(公告)号：JP2004138912A
公开(公告)日：2004-05-13
申请号：JP2002304892
申请日：2002-10-18
申请人： Hitachi Displays Ltd , Hitachi Ltd , 株式会社日立ディスプレイズ , 株式会社日立製作所
发明人： HORIKOSHI KAZUHIKO , KIKUCHI HIROSHI , OGATA KIYOSHI , TAMURA TAKUO , YAMAGUCHI HIROKATSU , OKURA OSAMU , GOTO JUN
IPC分类号： G02F1/1368 , G09F9/30 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To relieve defective display resulting from the instability of a laser beam in a display unit formed with a thin film transistor or the like by using semiconductor layers of a polycrystalline silicon film modified by irradiating an amorphous silicon film formed on an insulating substrate with laser beams. SOLUTION: When irradiating a strip-like pattern 305 on the amorphous silicon film with laser beams to perform crystallization, the angle between one side of an active matrix substrate 101 and the longitudinal direction of the strip-like pattern 305 of the laser beam irradiation is set in such a range that not to overlap in adjacent or close pixels or pixels of the same color. Thus, a thin film transistor 404, which drives a pixel 405 or a pixel of the same color having a color filter 505 and has characteristics different from those of others resulting from the instable intensity of laser, is arranged so as not to be on a straight line or not to be adjacent or close to each other in the surface of a display area AR. COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2008003016A Sampling probe for microsample 审中-公开
标题翻译：微型采样探头
公开(公告)号：JP2008003016A
公开(公告)日：2008-01-10
申请号：JP2006174726
申请日：2006-06-26
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： HORIKOSHI KAZUHIKO , AKAMATSU NAOTOSHI , OTANI TOSHIAKI , HASHIMOTO KEN , OKI NOBORU , SEKI HIDENORI
IPC分类号： G01N1/22 , G01N1/04 , G01N27/62
摘要： PROBLEM TO BE SOLVED: To perform contamination-free mass analysis by sampling micro-foreign matters of several μm that become cause of device faults or the like.
SOLUTION: The sampling and heating of micro-foreign matters can be performed by the same probe by providing a local heating mechanism to the leading end part of the probe for sampling the micro-foreign matters of several μm. Since the probe can be mounted directly on a mass spectrometer, contamination-free analysis can be performed. Furthermore, by heating only the foreign matter of the leading end part of the probe, the part other than the leading end part of the probe will not be heated, even if a contaminants adhere to parts, other than the leading end part of the probe, and a mass spectrum that is satisfactory in S/N ratio can be obtained.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过采集成为造成器件故障等的几微米的微异物进行无污染的质量分析。
解决方案：通过向探头的前端部提供局部加热机构，可以通过相同的探针进行微异物的取样和加热，以对几μm的微异物进行取样。由于探头可以直接安装在质谱仪上，因此可以进行无污染的分析。此外，通过仅加热探针的前端部的异物，除了探针的前端部以外，除了探针的前端部以外的部分，也不会被加热，并且可以获得令人满意的S / N比的质谱。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2006329733A Microsampling apparatus 审中-公开
标题翻译：微型装置
公开(公告)号：JP2006329733A
公开(公告)日：2006-12-07
申请号：JP2005151753
申请日：2005-05-25
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： HORIKOSHI KAZUHIKO , OGATA KIYOSHI , HASHIMOTO KEN , OKI NOBORU , SEKI HIDENORI , KUNIMATSU MIYUKI
IPC分类号： G01N1/28 , G01N1/06
摘要： PROBLEM TO BE SOLVED: To sample only a target substance without mixing a peripheral base material when a fine contamination or the like of 10 μm or below making a device or the like inferior is isolated and sampled for the purpose of analyzing pretreatment.
SOLUTION: The microsampling apparatus for sampling the target contamination in the analyzing pretreatment of the contamination on the surface of the device or the contamination in a film has a cutting part, a foreign matter sampling part, an observation part and a sample feeding stage. Further, the cutting part and the contamination sampling part are constituted so as to hold the coordinates observed in the observation part in common. The edge of a manipulation part is constituted so as to be driven by the control from a computer.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了分析和取样使得器件等劣化的10μm或更小的细微污染物等，为了分析预处理的目的，仅对目标物质进行采样而不混合周边基材。解决方案：用于对装置表面上的污染物的分析预处理中的目标污染物进行取样的微采样装置或膜中的污染物具有切割部分，异物取样部分，观察部分和样品进给阶段。此外，切割部和污染物取样部被构成为保持观察部分中共同观察的坐标。操作部的边缘构成为由计算机的控制驱动。版权所有（C）2007，JPO＆INPIT

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