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1. 发明公开

EP0856349A2 Apparatus for processing gas by electron beam 失效
标题翻译：装置用于通过电子辐射处理气体
公开(公告)号：EP0856349A2
公开(公告)日：1998-08-05
申请号：EP97122794.7
申请日：1997-12-23
申请人： Hitachi, Ltd.
发明人： Seki, Hirofumi , Shirakata, Hirofumi , Hori, Yasuro , Shiono, Shigeo
IPC分类号： B01D53/32
CPC分类号： B01D53/323 , B01D2259/812 , Y10S422/90
摘要： The interior of a single vacuum vessel (14) is maintained at vacuum by means of a vacuum pump (16), first and second lenses (52, 54) are disposed in the vacuum vessel (14), an electron beam (64) emitted from an electron source (10) is focused by each of the lenses (52, 54), and the electron beam (64) is irradiated onto a processing gas (66) in a duct (18). When the current value of the electron beam is increased as the concentration of NOx in the processing gas increases, the focal distance is decreased by increasing the intensity of magnetic fields or the intensity of electric fields of the lenses (52, 54) in accordance with the current value of a filament (32), the current value of an arc power supply (36) and the gas pressure in a gas reservoir (20), the lens (52) is moved toward a draw-out electrode (44) and the lens (54) is moved toward the duct (18), so that a parallel electron beam of constant diameter is formed and the electron beam can be prevented from being increased in focusing diameter.

2. 发明公开

EP0883159A3 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：EP0883159A3
公开(公告)日：2003-01-22
申请号：EP98108905.5
申请日：1998-05-15
申请人： Hitachi, Ltd.
发明人： Seki, Hirofumi , Ichimura, Satoshi , Takemori, Satoshi , Setoyama, Eiji , Ishiguro, Kouji , Mochizuki, Yasuhiro , Okada, Sensuke , Murakami, Hajime
IPC分类号： H01J37/32
CPC分类号： H01J37/32229 , H01J37/32192 , H01J37/32266 , H01J37/32678
摘要： Dielectric bodies 16a, 16b are arranged in waveguide portions 3a, 3b for passing a microwave and for holding a plasma generating chamber 25 at a vacuum. The dielectric bodies 16a, 16b are arranged to intersect at least an electron cyclotron resonance area (112) of the waveguide portions 3a, 3b. Tip end portions of the dielectric bodies 16a, 16b at the side of the chamber 25 are positioned toward a side of the chamber 25 from an intermediate portion of the axial length of a first permanent magnet (15) which is arranged by enclosing an outer periphery of the waveguide portions 3a, 3b; and tip end portions of the dielectric bodies 16a, 16b at a side of the chamber 25 is substantially consistent with the inner face of the chamber 25.

3. 发明公开

EP0856349A3 Apparatus for processing gas by electron beam 失效
标题翻译： Vorrichtung zur Behandlung von Gasen durch Elektronenstrahlung
公开(公告)号：EP0856349A3
公开(公告)日：2002-05-08
申请号：EP97122794.7
申请日：1997-12-23
申请人： Hitachi, Ltd.
发明人： Seki, Hirofumi , Shirakata, Hirofumi , Hori, Yasuro , Shiono, Shigeo
IPC分类号： B01D53/32 , H01J33/02 , H01J37/301 , H01J37/30
CPC分类号： B01D53/323 , B01D2259/812 , Y10S422/90
摘要： The interior of a single vacuum vessel (14) is maintained at vacuum by means of a vacuum pump (16), first and second lenses (52, 54) are disposed in the vacuum vessel (14), an electron beam (64) emitted from an electron source (10) is focused by each of the lenses (52, 54), and the electron beam (64) is irradiated onto a processing gas (66) in a duct (18). When the current value of the electron beam is increased as the concentration of NOx in the processing gas increases, the focal distance is decreased by increasing the intensity of magnetic fields or the intensity of electric fields of the lenses (52, 54) in accordance with the current value of a filament (32), the current value of an arc power supply (36) and the gas pressure in a gas reservoir (20), the lens (52) is moved toward a draw-out electrode (44) and the lens (54) is moved toward the duct (18), so that a parallel electron beam of constant diameter is formed and the electron beam can be prevented from being increased in focusing diameter.
摘要翻译：单个真空容器（14）的内部通过真空泵（16）保持在真空状态，第一和第二透镜（52,54）设置在真空容器（14）中，发射电子束（64）从电子源（10）通过每个透镜（52,54）聚焦，并且电子束（64）被照射到管道（18）中的处理气体（66）上。当电子束的电流值随着处理气体中的NOx浓度的增加而增加时，通过根据磁场强度增加磁场的强度或透镜的电场强度来减小焦距灯丝（32）的当前值，电弧电源（36）的当前值和气体贮存器（20）中的气体压力，透镜（52）朝向抽出电极（44）移动，并且透镜（54）朝向管道（18）移动，使得形成恒定直径的平行电子束，并且可以防止电子束在聚焦直径上增加。

4. 发明公开

EP0883159A2 Plasma processing apparatus 失效
标题翻译： Plasmabehandlungsgerät
公开(公告)号：EP0883159A2
公开(公告)日：1998-12-09
申请号：EP98108905.5
申请日：1998-05-15
申请人： Hitachi, Ltd.
发明人： Seki, Hirofumi , Ichimura, Satoshi , Takemori, Satoshi , Setoyama, Eiji , Ishiguro, Kouji , Mochizuki, Yasuhiro , Okada, Sensuke , Murakami, Hajime
IPC分类号： H01J37/32
CPC分类号： H01J37/32229 , H01J37/32192 , H01J37/32266 , H01J37/32678
摘要： Dielectric bodies 16a, 16b are arranged in waveguide portions 3a, 3b for passing a microwave and for holding a plasma generating chamber 25 at a vacuum. The dielectric bodies 16a, 16b are arranged to intersect at least an electron cyclotron resonance area (112) of the waveguide portions 3a, 3b. Tip end portions of the dielectric bodies 16a, 16b at the side of the chamber 25 are positioned toward a side of the chamber 25 from an intermediate portion of the axial length of a first permanent magnet (15) which is arranged by enclosing an outer periphery of the waveguide portions 3a, 3b; and tip end portions of the dielectric bodies 16a, 16b at a side of the chamber 25 is substantially consistent with the inner face of the chamber 25.
摘要翻译：介质体16a，16b布置在波导部分3a，3b中，用于使微波通过，并将等离子体产生室25保持在真空状态。绝缘体16a，16b布置成与波导部分3a，3b的至少一个电子回旋共振区域（112）相交。电介质体16a，16b在腔室25一侧的尖端部分从第一永磁体（15）的轴向长度的中间部分朝着腔室25的一侧定位，第一永久磁铁（15）的中心部分通过包围外周的波导部分3a，3b; 电介质体16a，16b在腔室25一侧的前端部与腔室25的内表面基本一致。

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