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    • 6. 发明申请
    • APPARATUS AND METHOD FOR SWITCHING MIMO MODES IN A WIRELESS COMMUNICATION SYSTEM
    • 用于在无线通信系统中切换MIMO模式的装置和方法
    • US20120120873A1
    • 2012-05-17
    • US13263695
    • 2010-04-05
    • Kuk Jin SongSeung Hyun LeeHyung Joon JeonIl Nyun KimKwang Sung Kim
    • Kuk Jin SongSeung Hyun LeeHyung Joon JeonIl Nyun KimKwang Sung Kim
    • H04B7/02H04W4/00
    • H04B7/0871H04B7/04H04B7/0689H04B7/0697H04B17/336
    • Disclosed is an apparatus for switching MIMO modes, which can efficiently switch an MIMO mode of a mobile station. The apparatus for switching MIMO modes includes an MIMO mode determining unit, a staying time determining unit, and an MIMO mode switching unit. The MIMO mode determining unit determines a current MIMO mode of a mobile station. The staying time determining unit determines a first staying time in a first MIMO mode of the mobile station when the MIMO mode determining unit determines the current MIMO mode of the mobile station as the first MIMO mode for transmitting the same data through a plurality of antennas, and determines a second staying time in a second MIMO mode of the mobile station when the MIMO mode determining unit determines the current MIMO mode of the mobile station as the second MIMO mode for transmitting different data by antenna. The MIMO mode switching unit switches the MIMO mode of the mobile station to the second MIMO mode when the first staying time is greater than or equal to a first threshold staying time.
    • 公开了一种用于切换MIMO模式的装置,其可以有效地切换移动台的MIMO模式。 用于切换MIMO模式的装置包括MIMO模式确定单元,停留时间确定单元和MIMO模式切换单元。 MIMO模式确定单元确定移动台的当前MIMO模式。 停留时间确定单元在MIMO模式确定单元确定移动站的当前MIMO模式作为通过多个天线发送相同数据的第一MIMO模式时,确定移动站的第一MIMO模式中的第一停留时间, 并且当所述MIMO模式确定单元将所述移动站的当前MIMO模式确定为用于通过天线发送不同数据的第二MIMO模式时,确定所述移动站的第二MIMO模式中的第二停留时间。 当第一停留时间大于或等于第一阈值停留时间时,MIMO模式切换单元将移动站的MIMO模式切换到第二MIMO模式。
    • 10. 发明授权
    • Magnetic tunnel junction and spin transfer torque random access memory having the same
    • 磁隧道结和自旋转移转矩随机存取存储器具有相同的功能
    • US08730714B2
    • 2014-05-20
    • US13336102
    • 2011-12-23
    • Seung Hyun Lee
    • Seung Hyun Lee
    • G11C11/00
    • G11C11/161G11C11/5607H01L27/228H01L43/08
    • A magneto-resistance memory device includes a first pinned layer having a first magnetic polarity regardless of current applied to the first pinned layer, a first tunnel insulating layer arranged on the first pinned layer, a first free layer arranged on the first tunnel insulating layer and having a magnetic polarity that changes in response to current of a first amount, a second pinned layer coupled to the first free layer and having the first magnetic polarity regardless of current applied to the first pinned layer, a second tunnel insulating layer arranged on the second pinned layer, a second free layer arranged on the second tunnel insulating layer and having a magnetic polarity that changes in response to current of a second amount, wherein the second amount is smaller than the first amount, and a connection layer.
    • 磁阻存储器件包括具有第一磁极性的第一被钉扎层,而不管施加到第一被钉扎层的电流如何,布置在第一钉扎层上的第一隧道绝缘层,布置在第一隧道绝缘层上的第一自由层和 具有响应于第一量的电流而变化的磁极性,耦合到第一自由层并且具有第一磁极性的第二被钉扎层,而不管施加到第一被钉扎层的电流如何;第二隧道绝缘层,布置在第二自由层上 所述第二自由层布置在所述第二隧道绝缘层上,并且具有响应于第二量的电流而变化的磁极性,其中所述第二量小于所述第一量,以及连接层。