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1. 发明授权

US07923711B2 Switching elements and production methods thereof 有权
标题翻译：开关元件及其制造方法
公开(公告)号：US07923711B2
公开(公告)日：2011-04-12
申请号：US11881575
申请日：2007-07-26
申请人： Hisashi Shima , Hiroyuki Akinaga , Fumiyoshi Takano , Yukio Tamai
发明人： Hisashi Shima , Hiroyuki Akinaga , Fumiyoshi Takano , Yukio Tamai
IPC分类号： H01L47/00
CPC分类号： H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： The present invention provides switching elements having a readout margin suitable for data storage units of nonvolatile memories, which are obtained by improving the resistance ratio of metal oxide thin films having reversible variable resistance properties. The present invention provides switching elements having a metal oxide consisting of a transition metal and oxygen formed between a first electrode and a second electrode, by modifying one or more of the crystal structure, ionic valence number of metal element, and nonstoichiometricity of a stoichiometric compound consisted of the transition metal and oxygen. The present invention also provides methods for producing switching elements having reversible variable resistance characteristics due to electric power application history.
摘要翻译：本发明提供了具有适合于非易失性存储器的数据存储单元的读出裕度的开关元件，其通过改善具有可逆可变电阻特性的金属氧化物薄膜的电阻比而获得。本发明提供了通过改变晶体结构，金属元素的离子价数和化学计量比的化学计量的一种或多种来形成具有由过渡金属和氧形成的金属氧化物的开关元件，所述过渡金属和氧形成在第一电极和第二电极之间由过渡金属和氧气组成。本发明还提供了由于电力使用历史而产生具有可逆电阻特性的开关元件的方法。

2. 发明授权

US07894239B2 Variable resistance element, method for producing the same, and nonvolatile semiconductor storage device 有权
标题翻译：可变电阻元件及其制造方法以及非易失性半导体存储器件
公开(公告)号：US07894239B2
公开(公告)日：2011-02-22
申请号：US12328648
申请日：2008-12-04
申请人： Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Fumiyoshi Takano , Hiroyuki Akinaga
发明人： Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Fumiyoshi Takano , Hiroyuki Akinaga
IPC分类号： G11C7/00
CPC分类号： G11C8/08 , G11C13/0007 , G11C13/0028 , G11C2013/0083 , G11C2213/32 , G11C2213/56 , G11C2213/77 , H01C7/108 , H01L45/04 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1658 , Y10T29/49082
摘要： The variable resistance element of the present invention is a variable resistance element having an electrode, the other electrode, and a metal oxide material sandwiched between the electrodes and having an electrical resistance, between the electrodes, changing reversibly in response to a voltage applied between the electrodes. The variable resistance element further includes, inside the metal oxide material, a low resistance material having a lower electrical resistance than the metal oxide material and being out of contact with at least either one of the electrodes. This makes it possible to reduce a forming voltage for providing a conductive section inside the metal oxide material, without causing a leakage current to increase.
摘要翻译：本发明的可变电阻元件是具有电极，另一个电极和夹在电极之间并具有电阻的金属氧化物材料的可变电阻元件，在电极之间，响应于施加在电极之间的电压而可逆地改变电极。可变电阻元件还包括在金属氧化物材料内部的具有比金属氧化物材料低的电阻并且与至少任一个电极不接触的低电阻材料。这使得可以降低用于在金属氧化物材料内部提供导电部分的形成电压，而不会导致泄漏电流增加。

3. 发明申请

US20090147558A1 VARIABLE RESISTANCE ELEMENT, METHOD FOR PRODUCING THE SAME, AND NONVOLATILE SEMICONDUCTOR STORAGE DEVICE 有权
标题翻译：可变电阻元件，其制造方法和非易失性半导体存储器件
公开(公告)号：US20090147558A1
公开(公告)日：2009-06-11
申请号：US12328648
申请日：2008-12-04
申请人： Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Fumiyoshi Takano , Hiroyuki Akinaga
发明人： Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Fumiyoshi Takano , Hiroyuki Akinaga
IPC分类号： G11C11/21 , H01C7/10 , H01C17/00
CPC分类号： G11C8/08 , G11C13/0007 , G11C13/0028 , G11C2013/0083 , G11C2213/32 , G11C2213/56 , G11C2213/77 , H01C7/108 , H01L45/04 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1658 , Y10T29/49082
摘要： The variable resistance element of the present invention is a variable resistance element having an electrode, the other electrode, and a metal oxide material sandwiched between the electrodes and having an electrical resistance, between the electrodes, changing reversibly in response to a voltage applied between the electrodes. The variable resistance element further includes, inside the metal oxide material, a low resistance material having a lower electrical resistance than the metal oxide material and being out of contact with at least either one of the electrodes. This makes it possible to reduce a forming voltage for providing a conductive section inside the metal oxide material, without causing a leakage current to increase.
摘要翻译：本发明的可变电阻元件是具有电极，另一个电极和夹在电极之间并具有电阻的金属氧化物材料的可变电阻元件，在电极之间，响应于施加在电极之间的电压而可逆地改变电极。可变电阻元件还包括在金属氧化物材料内部的具有比金属氧化物材料低的电阻并且与至少任一个电极不接触的低电阻材料。这使得可以降低用于在金属氧化物材料内部提供导电部分的形成电压，而不会导致泄漏电流增加。

4. 发明申请

US20080054243A1 Switching elements and production methods thereof 有权
标题翻译：开关元件及其制造方法
公开(公告)号：US20080054243A1
公开(公告)日：2008-03-06
申请号：US11881575
申请日：2007-07-26
申请人： Hisashi Shima , Hiroyuki Akinaga , Fumiyoshi Takano , Yukio Tamai
发明人： Hisashi Shima , Hiroyuki Akinaga , Fumiyoshi Takano , Yukio Tamai
IPC分类号： H01L47/00 , H01L21/8242
CPC分类号： H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： The present invention provides switching elements having a readout margin suitable for data storage units of nonvolatile memories, which are obtained by improving the resistance ratio of metal oxide thin films having reversible variable resistance properties. The present invention provides switching elements having a metal oxide consisting of a transition metal and oxygen formed between a first electrode and a second electrode, by modifying one or more of the crystal structure, ionic valence number of metal element, and nonstoichiometricity of a stoichiometric compound consisted of the transition metal and oxygen. The present invention also provides methods for producing switching elements having reversible variable resistance characteristics due to electric power application history
摘要翻译：本发明提供了具有适合于非易失性存储器的数据存储单元的读出裕度的开关元件，其通过改善具有可逆可变电阻特性的金属氧化物薄膜的电阻比而获得。本发明提供了通过改变晶体结构，金属元素的离子价数和化学计量比的化学计量的一种或多种来形成具有由过渡金属和氧形成的金属氧化物的开关元件，所述过渡金属和氧形成在第一电极和第二电极之间由过渡金属和氧气组成。本发明还提供了由于电力使用历史而产生具有可逆电阻特性的开关元件的方法

5. 发明申请

US20100172170A1 VARIABLE RESISTIVE ELEMENT, MANUFACTURING METHOD FOR SAME, AND NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：可变电阻元件，其制造方法和非易失性半导体存储器件
公开(公告)号：US20100172170A1
公开(公告)日：2010-07-08
申请号：US12598642
申请日：2008-04-07
申请人： Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Hiroyuki Akinaga , Fumiyoshi Takano
发明人： Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Hiroyuki Akinaga , Fumiyoshi Takano
IPC分类号： G11C11/56 , H01L29/22 , H01L21/44
CPC分类号： G11C13/0011 , G11C11/5614 , G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2013/0083 , G11C2013/009 , G11C2213/32 , G11C2213/34 , G11C2213/51 , G11C2213/56 , G11C2213/77 , H01L27/101 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： Provided is a variable resistive element which performs high speed and low power consumption operation. The variable resistive element comprises a metal oxide layer between first and second electrodes wherein electrical resistance between the first and second electrodes reversibly changes in accordance with application of electrical stress across the first and second electrodes. The metal oxide layer has a filament, which is a current path where the density of a current flowing between the first and second electrodes locally increases. A portion including at least the vicinity of an interface between the certain electrode, which is one or both of the first and second electrodes, and the filament, on an interface between the certain electrode and the metal oxide layer is provided with an interface oxide which is an oxide of at least one element included in the certain electrode and different from the oxide of the metal oxide layer.
摘要翻译：提供一种执行高速和低功耗操作的可变电阻元件。可变电阻元件包括在第一和第二电极之间的金属氧化物层，其中第一和第二电极之间的电阻根据跨越第一和第二电极的电应力的应用而可逆地改变。金属氧化物层具有灯丝，其是在第一和第二电极之间流动的电流的密度局部增加的电流路径。在特定电极和金属氧化物层之间的界面上至少包括作为第一和第二电极中的一个或两个的特定电极和灯丝之间的界面附近的部分设置有界面氧化物，其界面氧化物是包含在该特定电极中并且与金属氧化物层的氧化物不同的至少一种元素的氧化物。

6. 发明授权

US08054674B2 Variable resistive element, manufacturing method for same, and non-volatile semiconductor memory device 有权
标题翻译：可变电阻元件，相同的制造方法和非易失性半导体存储器件
公开(公告)号：US08054674B2
公开(公告)日：2011-11-08
申请号：US12598642
申请日：2008-04-07
申请人： Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Hiroyuki Akinaga , Fumiyoshi Takano
发明人： Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Hiroyuki Akinaga , Fumiyoshi Takano
IPC分类号： G11C11/00
CPC分类号： G11C13/0011 , G11C11/5614 , G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2013/0083 , G11C2013/009 , G11C2213/32 , G11C2213/34 , G11C2213/51 , G11C2213/56 , G11C2213/77 , H01L27/101 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： Provided is a variable resistive element which performs high speed and low power consumption operation. The variable resistive element comprises a metal oxide layer between first and second electrodes wherein electrical resistance between the first and second electrodes reversibly changes in accordance with application of electrical stress across the first and second electrodes. The metal oxide layer has a filament, which is a current path where the density of a current flowing between the first and second electrodes locally increases. A portion including at least the vicinity of an interface between the certain electrode, which is one or both of the first and second electrodes, and the filament, on an interface between the certain electrode and the metal oxide layer is provided with an interface oxide which is an oxide of at least one element included in the certain electrode and different from the oxide of the metal oxide layer.
摘要翻译：提供一种执行高速和低功耗操作的可变电阻元件。可变电阻元件包括在第一和第二电极之间的金属氧化物层，其中第一和第二电极之间的电阻根据跨越第一和第二电极的电应力的应用而可逆地改变。金属氧化物层具有灯丝，其是在第一和第二电极之间流动的电流的密度局部增加的电流路径。在特定电极和金属氧化物层之间的界面上至少包括作为第一和第二电极中的一个或两个的特定电极和灯丝之间的界面附近的部分设置有界面氧化物，其界面氧化物是包含在该特定电极中并且与金属氧化物层的氧化物不同的至少一种元素的氧化物。

7. 发明授权

US08487415B2 Rectifier and process for producing the rectifier 有权
标题翻译：整流器和整流器的制造工艺
公开(公告)号：US08487415B2
公开(公告)日：2013-07-16
申请号：US12740460
申请日：2008-10-30
申请人： Hisashi Shima , Hiroyuki Akinaga , Shoji Ishibashi , Tomoyuki Tamura
发明人： Hisashi Shima , Hiroyuki Akinaga , Shoji Ishibashi , Tomoyuki Tamura
IPC分类号： H01L29/861
CPC分类号： H01L29/872 , H01L29/24
摘要： The present invention provides a rectifier element that has a titanium oxide layer interposed between first and second electrodes containing a transition metal with an electronegativity larger than that of Ti, wherein, in the titanium oxide layer, only the interface on the side facing any one of the electrodes has a stoichiometric composition, and wherein the average composition of the whole layer is represented by the formula TiOx (wherein x satisfies the relationship 1.6≦x
摘要翻译：本发明提供了一种整流元件，其具有插入在第一和第二电极之间的氧化钛层，其包含电负性大于Ti的过渡金属，其中，在氧化钛层中，仅在与电极具有化学计量组成，并且其中整个层的平均组成由式TiOx表示（其中x满足关系1.6@x <2），并且其中可以通过施加反向电信号来反转整流特性，在相反方向超过第一和第二电极之间的临界反向电力。本发明还提供一种整流元件的制造方法，该方法包括以下步骤：在基片上沉积含有电负性大于Ti的过渡金属的第一电极; 在第一电极上沉积一层氧化钛（TiOx，其中x满足关系1.6@x <2）; 将氧化钛（TiOx）层的表面暴露于氧气氛中; 以及在暴露于氧气氛的氧化钛（TiOx）层的表面上沉积含有电负性大于Ti的过渡金属的第二电极。

8. 发明申请

US20100276684A1 Rectifier and Process for Producing the Rectifier 有权
标题翻译：整流器和整流器生产过程
公开(公告)号：US20100276684A1
公开(公告)日：2010-11-04
申请号：US12740460
申请日：2008-10-30
申请人： Hisashi Shima , Hiroyuki Akinaga , Shoji Ishibashi , Tomoyuki Tamura
发明人： Hisashi Shima , Hiroyuki Akinaga , Shoji Ishibashi , Tomoyuki Tamura
IPC分类号： H01L29/43 , H01L21/16
CPC分类号： H01L29/872 , H01L29/24
摘要： The present invention provides a rectifier element that has a titanium oxide layer interposed between first and second electrodes containing a transition metal with an electronegativity larger than that of Ti, wherein, in the titanium oxide layer, only the interface on the side facing any one of the electrodes has a stoichiometric composition, and wherein the average composition of the whole layer is represented by the formula TiOx (wherein x satisfies the relationship 1.6≦x
摘要翻译：本发明提供了一种整流元件，其具有插入在第一和第二电极之间的氧化钛层，其包含电负性大于Ti的过渡金属，其中，在氧化钛层中，仅在与电极具有化学计量组成，并且其中整个层的平均组成由式TiO x表示（其中x满足关系1.6＆nlE; x <2），并且其中可以通过施加反向电信号来反转整流特性其在相反方向上超过第一和第二电极之间的临界反向电力。本发明还提供一种整流元件的制造方法，该方法包括以下步骤：在基片上沉积含有电负性大于Ti的过渡金属的第一电极; 在第一电极上沉积一层氧化钛（TiOx，其中x满足关系1.6＆nlE; x <2）; 将氧化钛（TiOx）层的表面暴露于氧气氛中; 以及在暴露于氧气氛的氧化钛（TiOx）层的表面上沉积含有电负性大于Ti的过渡金属的第二电极。

9. 发明申请

US20050134568A1 Method and system for providing a rotated keyboard and angled display in a hand-held computing device 审中-公开
标题翻译：用于在手持计算设备中提供旋转键盘和倾斜显示器的方法和系统
公开(公告)号：US20050134568A1
公开(公告)日：2005-06-23
申请号：US10738181
申请日：2003-12-17
申请人： David Hill , Hisashi Shima , Kazuhiko Yamazaki
发明人： David Hill , Hisashi Shima , Kazuhiko Yamazaki
IPC分类号： G06F1/16 , G09G5/00
CPC分类号： G06F1/1666 , G06F1/1616 , G06F1/1622 , G06F2200/1614
摘要： A method and system for providing hand-held computing device is disclosed. The hand-held computing device includes a display and a keyboard that is coupled with the display. The keyboard is rotatable through at least ninety degrees to be oriented in a portrait mode or a landscape mode.
摘要翻译：公开了一种用于提供手持计算设备的方法和系统。手持计算设备包括与显示器耦合的显示器和键盘。键盘可旋转至少九十度以便以纵向模式或横向模式定向。

10. 外观设计

USD361323S Personal computer housing 失效
公开(公告)号：USD361323S
公开(公告)日：1995-08-15
申请号：US17292
申请日：1994-01-07
申请人： Kazuhiko Yamazaki , Hisashi Shima
设计人： Kazuhiko Yamazaki , Hisashi Shima

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