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1. 发明授权

US07976896B2 Method of processing a substrate and apparatus processing the same 有权
标题翻译：处理基板的方法及其处理方法
公开(公告)号：US07976896B2
公开(公告)日：2011-07-12
申请号：US11540629
申请日：2006-10-02
申请人： Yoshiteru Fukuda , Nobuhiro Ogata , Takayuki Ishii , Keiji Tanouchi
发明人： Yoshiteru Fukuda , Nobuhiro Ogata , Takayuki Ishii , Keiji Tanouchi
IPC分类号： B05D3/12
CPC分类号： H01L21/6715 , G03F7/162 , G03F7/168 , H01L21/67051
摘要： A spin chuck rotatably holds a semiconductor wafer, while resist is dropped on a surface of the semiconductor wafer through a resist application nozzle and thus applied thereon, and before the resist applied on the wafer dries, a cleaning liquid is supplied through a bevel cleaning nozzle to a portion of the wafer located at a peripheral portion thereof in a vicinity of a beveled portion to remove the resist adhering to the beveled portion. Thereafter, a film of the resist that is formed on the surface of the wafer is dried.
摘要翻译：旋转卡盘可旋转地保持半导体晶片，同时抗蚀剂通过抗蚀剂施加喷嘴落在半导体晶片的表面上并因此施加在其上，并且在施加在晶片上的抗蚀剂干燥之前，通过斜面清洁喷嘴到位于其周边部分的晶片的位于斜面部分附近的部分以去除附着在斜面部分上的抗蚀剂。此后，将形成在晶片表面上的抗蚀剂膜干燥。

2. 发明申请

US20070082134A1 Method of processing a substrate and apparatus processing the same 有权
标题翻译：处理基板的方法及其处理方法
公开(公告)号：US20070082134A1
公开(公告)日：2007-04-12
申请号：US11540629
申请日：2006-10-02
申请人： Yoshiteru Fukuda , Nobuhiro Ogata , Takayuki Ishii , Keiji Tanouchi
发明人： Yoshiteru Fukuda , Nobuhiro Ogata , Takayuki Ishii , Keiji Tanouchi
IPC分类号： B05D3/10 , B05D3/04 , B05C13/02 , B08B3/00
CPC分类号： H01L21/6715 , G03F7/162 , G03F7/168 , H01L21/67051
摘要： A spin chuck rotatably holds a semiconductor wafer, while resist is dropped on a surface of the semiconductor wafer through a resist application nozzle and thus applied thereon, and before the resist applied on the wafer dries, a cleaning liquid is supplied through a bevel cleaning nozzle to a portion of the wafer located at a peripheral portion thereof in a vicinity of a beveled portion to remove the resist adhering to the beveled portion. Thereafter, a film of the resist that is formed on the surface of the wafer is dried.
摘要翻译：旋转卡盘可旋转地保持半导体晶片，同时抗蚀剂通过抗蚀剂施加喷嘴落在半导体晶片的表面上并因此施加在其上，并且在施加在晶片上的抗蚀剂干燥之前，通过斜面清洁喷嘴到位于其周边部分的晶片的位于斜面部分附近的部分以去除附着在斜面部分上的抗蚀剂。此后，将形成在晶片表面上的抗蚀剂膜干燥。

3. 发明授权

US08697187B2 Coating treatment method and coating treatment apparatus 有权
标题翻译：涂层处理方法和涂层处理装置
公开(公告)号：US08697187B2
公开(公告)日：2014-04-15
申请号：US12907585
申请日：2010-10-19
申请人： Yoshiteru Fukuda , Tomohiro Iseki , Takayuki Ishii
发明人： Yoshiteru Fukuda , Tomohiro Iseki , Takayuki Ishii
IPC分类号： B05D3/00
CPC分类号： H01L21/67184 , G03F7/162 , G03F7/2028 , H01L21/6708 , H01L21/6715 , H01L21/67178
摘要： Resist coating treatments for application of a resist solution to removal of a resist film on a wafer edge portion. A laser irradiation unit applies a laser light in a resist coating unit. At the time of resist coating treatment, the resist solution is discharged onto a central portion of the rotated wafer from a resist solution supply nozzle to form a resist film on the wafer. Thereafter, the laser irradiation unit moves to an outer peripheral portion of the wafer and applies the laser light onto the resist film on the outer peripheral portion to dry the resist film on the outer peripheral portion. The application of laser light is continued, and the solvent supply nozzle moves to a position above the edge portion and supplies solvent to the resist film on the edge portion. The solvent dissolves and removes the resist film on the edge portion.
摘要翻译：抗蚀剂涂覆处理用于在晶片边缘部分上施加抗蚀剂溶液以除去抗蚀剂膜。激光照射单元在抗蚀剂涂布单元中施加激光。在抗蚀剂涂布处理时，抗蚀剂溶液从抗蚀剂溶液供给喷嘴排出到旋转的晶片的中心部分，以在晶片上形成抗蚀剂膜。此后，激光照射单元移动到晶片的外周部，并将激光施加到外周部分的抗蚀剂膜上，以干燥外周部分上的抗蚀剂膜。继续施加激光，溶剂供给喷嘴移动到边缘部分上方的位置，并在边缘部分上的抗蚀剂膜上提供溶剂。溶剂溶解并除去边缘部分上的抗蚀剂膜。

4. 发明申请

US20060068110A1 Coating treatment apparatus and coating treatment method 失效
公开(公告)号：US20060068110A1
公开(公告)日：2006-03-30
申请号：US11232241
申请日：2005-09-22
申请人： Yoshiteru Fukuda , Tomohiro Iseki , Takayuki Ishii
发明人： Yoshiteru Fukuda , Tomohiro Iseki , Takayuki Ishii
IPC分类号： B05D5/00
CPC分类号： H01L21/67184 , H01L21/6708 , H01L21/6715
摘要： In the present invention, a plurality of solvent supply nozzles for solvents having different solubility parameters are provided in a coating treatment apparatus. For a solvent supply nozzle for use at the time of edge rinse, a solvent supply nozzle is selected that discharges a removal solvent having a solubility parameter different by a set value or more from that of a coating solvent contained in a coating solution. During coating treatment, the coating solution is discharged from a coating solution supply nozzle onto the central portion of a rotated substrate to form a solution film having a predetermined film thickness. Immediately after the formation, edge rinse is started with the coating solution on the substrate not dry yet, in which the removal solvent is supplied to the peripheral portion of the substrate from the selected solvent supply nozzle. In this event, the supplied removal solvent repels the coating solution on the substrate, so that only the coating solution on the peripheral portion is appropriately removed. According to the present invention, a series of coating treatments including the edge rinse can be carried out in a shorter time.

5. 发明授权

US07832352B2 Coating treatment method and coating treatment apparatus 有权
标题翻译：涂层处理方法和涂层处理装置
公开(公告)号：US07832352B2
公开(公告)日：2010-11-16
申请号：US11574888
申请日：2005-09-13
申请人： Yoshiteru Fukuda , Tomohiro Iseki , Takayuki Ishii
发明人： Yoshiteru Fukuda , Tomohiro Iseki , Takayuki Ishii
IPC分类号： B05B5/00 , B05B3/00 , B05B7/06
CPC分类号： H01L21/67184 , G03F7/162 , G03F7/2028 , H01L21/6708 , H01L21/6715 , H01L21/67178
摘要： To perform a series of resist coating treatments from application of a resist solution to removal of a resist film on a wafer edge portion in a shorter time.A laser irradiation unit for applying a laser light is provided in a resist coating unit. At the time of resist coating treatment, the resist solution is discharged onto a central portion of the rotated wafer from a resist solution supply nozzle to form a resist film on the wafer. Thereafter, the laser irradiation unit moves to an outer peripheral portion of the wafer and applies the laser light onto the resist film on the outer peripheral portion to dry the resist film on the outer peripheral portion. After the resist film on the outer peripheral portion dries, the application of laser light is continued, and the solvent supply nozzle moves to a position above the edge portion of the wafer and supplies the solvent to the resist film on the edge portion of the wafer. The supply of the solvent dissolves and removes the resist film on the edge portion of the wafer.
摘要翻译：为了在较短时间内从抗蚀剂溶液施加到晶片边缘部分上去除抗蚀剂膜，进行一系列光刻胶涂覆处理。在抗蚀剂涂布单元中设置用于施加激光的激光照射单元。在抗蚀剂涂布处理时，抗蚀剂溶液从抗蚀剂溶液供给喷嘴排出到旋转的晶片的中心部分，以在晶片上形成抗蚀剂膜。此后，激光照射单元移动到晶片的外周部，并将激光施加到外周部分的抗蚀剂膜上，以干燥外周部分上的抗蚀剂膜。在外围部分的抗蚀剂膜干燥之后，继续施加激光，并且溶剂供应喷嘴移动到晶片的边缘部分上方的位置，并将溶剂供应到晶片的边缘部分上的抗蚀剂膜。溶剂的供应溶解并除去晶片边缘部分上的抗蚀剂膜。

6. 发明授权

US07479190B2 Coating treatment apparatus and coating treatment method 失效
标题翻译：涂层处理装置和涂层处理方法
公开(公告)号：US07479190B2
公开(公告)日：2009-01-20
申请号：US11232241
申请日：2005-09-22
申请人： Yoshiteru Fukuda , Tomohiro Iseki , Takayuki Ishii
发明人： Yoshiteru Fukuda , Tomohiro Iseki , Takayuki Ishii
IPC分类号： B05C11/00 , B05B7/06 , B05B3/00
CPC分类号： H01L21/67184 , H01L21/6708 , H01L21/6715
摘要： In the present invention, a plurality of solvent supply nozzles for solvents having different solubility parameters are provided in a coating treatment apparatus. For a solvent supply nozzle for use at the time of edge rinse, a solvent supply nozzle is selected that discharges a removal solvent having a solubility parameter different by a set value or more from that of a coating solvent contained in a coating solution. During coating treatment, the coating solution is discharged from a coating solution supply nozzle onto the central portion of a rotated substrate to form a solution film having a predetermined film thickness. Immediately after the formation, edge rinse is started with the coating solution on the substrate not dry yet, in which the removal solvent is supplied to the peripheral portion of the substrate from the selected solvent supply nozzle. In this event, the supplied removal solvent repels the coating solution on the substrate, so that only the coating solution on the peripheral portion is appropriately removed. According to the present invention, a series of coating treatments including the edge rinse can be carried out in a shorter time.
摘要翻译：在本发明中，在涂布处理装置中设置多个用于溶解度参数不同的溶剂的溶剂供给喷嘴。对于在边缘冲洗时使用的溶剂供给喷嘴，选择将溶解度参数与涂布溶液中所含的涂布溶剂的溶解度参数设定为不同的设定值以上的除去溶剂的溶剂供给喷嘴。在涂布处理中，将涂布液从涂布液供给喷嘴排出到旋转基板的中央部，形成具有规定膜厚的溶液膜。在形成之后，立即开始边缘冲洗，底物上的涂布液不干燥，其中从选择的溶剂供应喷嘴将去除溶剂供应到基材的周边部分。在这种情况下，所提供的去除溶剂将涂布溶液排斥在基材上，从而仅适当地除去外围部分上的涂布溶液。根据本发明，可以在更短的时间内进行包括边缘冲洗的一系列涂布处理。

7. 发明申请

US20080193654A1 Coating Treatment Method and Coating Treatment Apparatus 有权
标题翻译：涂层处理方法和涂层处理装置
公开(公告)号：US20080193654A1
公开(公告)日：2008-08-14
申请号：US11574888
申请日：2005-09-13
申请人： Yoshiteru Fukuda , Tomohiro Iseki , Takayuki Ishii
发明人： Yoshiteru Fukuda , Tomohiro Iseki , Takayuki Ishii
IPC分类号： B05D3/02 , B05B17/04
CPC分类号： H01L21/67184 , G03F7/162 , G03F7/2028 , H01L21/6708 , H01L21/6715 , H01L21/67178
摘要： A laser irradiation unit for applying a laser light is provided in a resist coating unit. At the time of resist coating treatment, the resist solution is discharged onto a central portion of the rotated wafer from a resist solution supply nozzle to form a resist film on the wafer. Thereafter, the laser irradiation unit moves to an outer peripheral portion of the wafer and applies the laser light onto the resist film on the outer peripheral portion to dry the resist film on the outer peripheral portion. After the resist film on the outer peripheral portion dries, the application of laser light is continued, and the solvent supply nozzle moves to a position above the edge portion of the wafer and supplies the solvent to the resist film on the edge portion of the wafer. The supply of the solvent dissolves and removes the resist film on the edge portion of the wafer.
摘要翻译：在抗蚀剂涂布单元中设置用于施加激光的激光照射单元。在抗蚀剂涂布处理时，抗蚀剂溶液从抗蚀剂溶液供给喷嘴排出到旋转的晶片的中心部分，以在晶片上形成抗蚀剂膜。此后，激光照射单元移动到晶片的外周部，并将激光施加到外周部分的抗蚀剂膜上，以干燥外周部分上的抗蚀剂膜。在外围部分的抗蚀剂膜干燥之后，继续施加激光，并且溶剂供应喷嘴移动到晶片的边缘部分上方的位置，并将溶剂供应到晶片的边缘部分上的抗蚀剂膜。溶剂的供应溶解并除去晶片边缘部分上的抗蚀剂膜。

8. 发明授权

US07485188B2 Coating process method and coating process apparatus 有权
标题翻译：涂装工艺方法和涂装工艺装置
公开(公告)号：US07485188B2
公开(公告)日：2009-02-03
申请号：US11362105
申请日：2006-02-27
申请人： Takashi Takekuma , Yasuyuki Kometani , Yoshiteru Fukuda , Junya Minamida
发明人： Takashi Takekuma , Yasuyuki Kometani , Yoshiteru Fukuda , Junya Minamida
IPC分类号： B05C11/10
CPC分类号： H01L21/67253 , H01L21/6715
摘要： A coating process method in which a coating liquid is discharged onto the surface of a target substrate to be processed while rotating the target substrate so as to expand the coating liquid radially outward on the target substrate and, thus, to form a coated film comprises the step of detecting that the actual discharging of a coating liquid from a coating liquid discharging nozzle is started, and the step of controlling based on a signal of the detection at least one of the driving timing of a pump for allowing the coating liquid to be discharged from the coating liquid discharging nozzle, the operation timing of a valve mounted to a pipe for supplying the coating liquid into the coating liquid discharging nozzle, and the rotation starting or stopping timing of the target substrate.
摘要翻译：一种涂布处理方法，其中在旋转目标衬底的同时将涂布液排放到待加工的目标衬底的表面上，以便在目标衬底上径向向外扩展涂覆液体，从而形成涂膜包括检测是否开始从涂布液排出喷嘴实际排出涂布液的步骤，以及根据检测信号进行控制的步骤，用于使涂布液排出的泵的驱动正时中的至少一个从涂布液排出喷嘴，安装到用于将涂布液供给到涂布液排出喷嘴中的管道的操作时间，以及目标基板的旋转开始或停止时机。

9. 发明申请

US20070257085A1 HEAT PROCESSING METHOD, COMPUTER-READABLE STORAGE MEDIUM, AND HEAT PROCESSING APPARATUS 有权
标题翻译：热处理方法，计算机可读存储介质和热处理装置
公开(公告)号：US20070257085A1
公开(公告)日：2007-11-08
申请号：US11742319
申请日：2007-04-30
申请人： Yoshiteru Fukuda , Kenichi Shigetomi , Shouken Moro
发明人： Yoshiteru Fukuda , Kenichi Shigetomi , Shouken Moro
IPC分类号： A47J36/02
CPC分类号： H01L21/67748 , H01L21/67005 , H01L21/67253 , H01L21/6838
摘要： In the present invention, a plurality of suction ports are provided in a heating plate of a heat processing apparatus. The suction ports are provided at a central portion, an intermediate portion, and a peripheral portion of a substrate mounting surface of the heating plate, respectively. The warped state of the substrate before heat-processed is measured, so that when the substrate warps protruding downward, the suction start timing via a suction port corresponding to the outer peripheral portion of the substrate is set to be relatively early as compared to the suction start timings via the other suction ports, and when the substrate warps protruding upward, the suction start timing via the suction port corresponding to the central portion of the substrate is set to be relatively early as compared to the suction start timings via the other suction ports. This allows a portion of the substrate bending upward to be sucked first when the substrate is mounted on the heating plate, thereby quickly performing correction of the warpage of the substrate to uniformly heat the substrate.
摘要翻译：在本发明中，在热处理装置的加热板上设置多个吸入口。吸入口分别设置在加热板的基板安装面的中央部分，中间部分和周边部分。测量热处理前的基板的翘曲状态，使得当基板翘曲向下突出时，通过与基板的外周部分相对应的吸入口将吸入开始正时设定为与抽吸相比较早通过其他吸入口开始定时，并且当基板翘曲向上突出时，通过与基板的中心部分相对应的吸入口的吸入开始定时与通过其它吸入口的吸入开始定时相比较早地设定。这使得当基板安装在加热板上时，首先将基板的一部分向上弯曲，从而快速地进行基板的翘曲校正以均匀地加热基板。

10. 发明授权

US09093222B2 Dye adsorption apparatus and dye adsorption method 有权
标题翻译：染料吸附装置和染料吸附法
公开(公告)号：US09093222B2
公开(公告)日：2015-07-28
申请号：US13989151
申请日：2011-09-27
申请人： Goro Furutani , Takashi Terada , Yoshiteru Fukuda , Norio Wada
发明人： Goro Furutani , Takashi Terada , Yoshiteru Fukuda , Norio Wada
IPC分类号： B05C3/00 , H01G9/20 , H01L21/67 , H01L21/677
CPC分类号： H01G9/20 , H01G9/2059 , H01L21/67057 , H01L21/67086 , H01L21/67757 , Y02E10/542 , Y02P70/521
摘要： Provided is a dye adsorption unit including a processing tank of which the upper surface is opened, in order to perform a batch dye adsorption process for a predetermined number of substrates. The dye adsorption unit further includes, as a moving system around the processing tank, a boat capable of going in and out of the processing tank from the upper opening, a boat transport unit that serves for the boat to go in and out of the processing tank, and a top cover for detachably closing the upper opening. Further, the dye adsorption unit includes a dye solution supply unit for supplying the dye solution into the processing tank, and a flow control unit for controlling the flow of the dye solution in the processing tank during the dye adsorption processing.
摘要翻译：提供了一种染料吸附单元，其包括上表面打开的处理槽，以便对预定数量的基材进行分批染料吸附处理。染料吸附单元还包括作为围绕处理罐的移动系统的能够从上部开口进出处理槽的船，用于船进出加工的船运输单元罐和顶盖，用于可拆卸地封闭上部开口。此外，染料吸附单元包括用于将染料溶液供给到处理槽中的染料溶液供给单元和用于在染料吸附处理期间控制处理槽中的染料溶液的流动的流量控制单元。

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