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1. 发明授权

US06768651B2 Communication device and plug-in unit therefor 有权
标题翻译：通讯设备及插件单元
公开(公告)号：US06768651B2
公开(公告)日：2004-07-27
申请号：US09813079
申请日：2001-03-20
申请人： Tsutomu Takahashi , Katsuya Fujii , Hisao Hayashi , Shiro Tani , Kazunori Oomori , Koichi Namimatsu , Hideki Zenitani , Masato Konishi
发明人： Tsutomu Takahashi , Katsuya Fujii , Hisao Hayashi , Shiro Tani , Kazunori Oomori , Koichi Namimatsu , Hideki Zenitani , Masato Konishi
IPC分类号： H05K714
CPC分类号： H05K7/20581 , G02B6/3825 , G02B6/3897 , G02B6/4452 , G02B6/4453 , H05K7/1409 , H05K7/1461 , H05K9/0016
摘要： A communication device includes a sub-rack unit and a plurality of plug-in units. The sub-rack unit includes a back wiring board having first connectors arranged in lines thereon, and a frame plate including vertical ribs and placed on said back wiring board so that the vertical ribs separate the lines of the first connectors. Each of the plug-in units includes: a printed board including top and bottom sides and parallel first and second sides, the printed board having second connectors provided on the first side thereof; a metal case including top and bottom faces, and parallel first and second side faces so as to cover the printed board; and first and second spring members. Each of said plug-in units is mounted in the sub-rack unit with the first and second connectors being connected so that the first and second side faces of the metal case are pressed outward against the vertical ribs of the frame plate by resilient forces of the first and second spring members, respectively.
摘要翻译：通信设备包括子机架单元和多个插入单元。子架单元包括具有布置在其上的第一连接器的背布线板和包括垂直肋并且放置在所述背布线板上的框架板，使得竖直肋将第一连接器的线分开。每个插入单元包括：印刷板，包括顶侧和底侧以及平行的第一和第二侧，印刷板具有设置在其第一侧上的第二连接器; 包括顶面和底面的金属外壳以及平行的第一和第二侧面以覆盖印刷板; 以及第一和第二弹簧构件。每个所述插入单元安装在子架单元中，其中第一和第二连接器被连接，使得金属壳体的第一和第二侧面通过弹性力抵抗框架板的垂直肋第一和第二弹簧构件。

2. 发明授权

US6153893A Thin film semiconductor device for display 失效
标题翻译：用于显示的薄膜半导体器件
公开(公告)号：US6153893A
公开(公告)日：2000-11-28
申请号：US764308
申请日：1996-12-12
申请人： Yuko Inoue , Yukio Kinoshita , Hisao Hayashi
发明人： Yuko Inoue , Yukio Kinoshita , Hisao Hayashi
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/78 , H01L29/786 , H01L29/04
CPC分类号： H01L29/78621 , H01L27/1214 , G02F1/13454
摘要： An LDD structure of a thin film transistor for pixel switching is realized on a large glass substrate by low-temperature processes. A thin film semiconductor device for display comprises a display part and a peripheral driving part formed on a glass substrate (0). Pixel electrodes (9) and NchLDD-TFTs are arranged in a matrix in the display part. Thin film transistor PchTFTs and NchTFTs which constitute circuit elements are formed in the peripheral driving part. Each thin film transistor consists of a gate electrode (1), an insulating film (2) formed on the gate electrode (1), a polycrystalline semiconductor layer (3) formed on the insulating layer (2), and a high concentration impurity layer constituting a source (4) and a drain (7) formed on the polycrystalline semiconductor layer (3). Further, an NchLDD-TFT thin film transistor for switching has an LDD structure in which a low concentration impurity layer (8) is interposed between the polycrystalline semiconductor layer (3) and the high concentration impurity layer (7).
摘要翻译：通过低温工艺在大玻璃基板上实现用于像素切换的薄膜晶体管的LDD结构。用于显示的薄膜半导体器件包括形成在玻璃衬底（0）上的显示部分和外围驱动部分。像素电极（9）和NchLDD-TFT以矩阵形式布置在显示部分中。构成电路元件的薄膜晶体管PchTFT和NchTFT形成在外围驱动部分中。每个薄膜晶体管由栅电极（1），形成在栅电极（1）上的绝缘膜（2），形成在绝缘层（2）上的多晶半导体层（3）和高浓度杂质层构成形成在多晶半导体层（3）上的源极（4）和漏极（7）。此外，用于切换的NchLDD-TFT薄膜晶体管具有其中在多晶半导体层（3）和高浓度杂质层（7）之间插入低浓度杂质层（8）的LDD结构。

3. 发明授权

US5930676A Multilayered interconnection substrate and process for fabricating the same 失效
标题翻译：多层互连基板及其制造方法
公开(公告)号：US5930676A
公开(公告)日：1999-07-27
申请号：US795151
申请日：1997-02-07
申请人： Kazuhiro Noda , Shinji Nakamura , Hisao Hayashi
发明人： Kazuhiro Noda , Shinji Nakamura , Hisao Hayashi
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L23/12 , H01L23/498 , H01L23/52 , H01L23/522 , H01L23/538 , H01L27/12 , H01L29/786 , H05K1/00 , H05K3/40 , G03C5/00
CPC分类号： H01L23/49894 , H01L23/5383 , H01L2924/0002 , H05K3/4038 , H05K3/4676
摘要： A multilayered interconnection substrate prevents contact failure from occurring and a process for fabricating the same wherein a multilayered interconnection substrate comprises a first interconnection layer formed on a substrate, at least two layers of insulation films differing in composition from each other are formed on the first interconnection layer. The insulation layers have at least one contact hole formed in such a manner to expose the selected portion of the first interconnection layer. A resin wall buries stepped portions formed on an inter-peripheral portion of the contact hole and a second interconnection layer formed inside the contact hole along the resin wall which is electrically connected to the first interconnection layer exposed at the bottom portion of the contact hole.
摘要翻译：多层互连衬底防止发生接触不良及其制造方法，其中多层互连衬底包括形成在衬底上的第一互连层，在第一互连上形成至少两层不同组成的绝缘膜层。绝缘层具有形成为暴露第一互连层的选定部分的至少一个接触孔。树脂壁埋设形成在接触孔的相邻周边部分上的阶梯部分，以及形成在接触孔内部的树脂壁的第二互连层，该第二互连层电连接到暴露在接触孔底部的第一互连层。

4. 发明授权

US5825442A Liquid crystal display device and method for making same having a diffuser made of spherical particles in a transparent body 失效
标题翻译：液晶显示装置及其制造方法，其具有透明体中由球状颗粒制成的扩散器
公开(公告)号：US5825442A
公开(公告)日：1998-10-20
申请号：US623391
申请日：1996-03-27
申请人： Kotaro Yoneda , Yasunori Sato , Hisao Hayashi
发明人： Kotaro Yoneda , Yasunori Sato , Hisao Hayashi
IPC分类号： G02F1/1335
CPC分类号： G02F1/133504 , G02F2001/133562 , G02F2001/133565
摘要： A liquid crystal display device of the present invention includes a first transparent electrode layer and a second transparent electrode layer sandwiching a liquid crystal layer between, a light source for radiating the substantially collimated light to the liquid crystal layer, and a diffusion unit for diffusing the light which has just been transmitted through the liquid crystal layer. The diffusion unit is arranged on the first glass plate via a transparent polymer for forming the first transparent electrode layer and a first alignment layer. Then, on the second glass plate, the second transparent electrode layer and a second orientation film are formed. A liquid crystal is introduced into a space between the first orientation film and the second alignment layer film and the light source is arranged for completing the liquid crystal display device.
摘要翻译：本发明的液晶显示装置包括第一透明电极层和夹着液晶层的第二透明电极层，用于将基本上准直的光照射到液晶层的光源和用于将液晶层扩散的扩散单元刚刚透过液晶层的光。扩散单元通过用于形成第一透明电极层和第一取向层的透明聚合物布置在第一玻璃板上。然后，在第二玻璃板上形成第二透明电极层和第二取向膜。将液晶引入到第一取向膜和第二取向膜之间的空间中，并且配置光源以完成液晶显示装置。

5. 发明授权

US5788467A Fan unit structure for an electronic device adapted to be inserted and mounted in a cabinet 失效
标题翻译：适用于插入和安装在机柜中的电子设备的风扇单元结构
公开(公告)号：US5788467A
公开(公告)日：1998-08-04
申请号：US745850
申请日：1996-11-12
申请人： Hideki Zenitani , Hisao Hayashi
发明人： Hideki Zenitani , Hisao Hayashi
IPC分类号： H05K7/20
CPC分类号： H05K7/20581
摘要： A fan unit adapted to be detachably inserted and mounted into a cabinet for an electronic device accommodating a plurality of electronic circuit units, for forcibly air-cooling the interior of the cabinet. The fan unit includes a fan, a unit housing, and a connector. The fan has a frame member and a motor supported to the frame member. The motor has a rotating shaft on which an impeller is mounted. The impeller is rotated by the motor to generate an air flow. The unit housing is integrally formed by resin molding. The unit housing is of a substantially rectangular parallelepiped box-shape having a front plate, a rear plate, a lower plate, a first side plate, a second side plate, and an upper opening. The unit housing has a recessed fan mounting portion having an upper opening inside the lower plate, for engagingly accommodating the fan. The lower plate has at its portion corresponding to a bottom surface of the fan mounting portion a ventilation opening for allowing pass of the air flow generated by the fan. The connector is provided for electrical connection with the electric device. The connector is mounted on the rear plate so that a part of the connector is exposed.
摘要翻译：一种风扇单元，其适于可拆卸地插入并安装在容纳多个电子电路单元的电子设备的机柜中，用于强制空气冷却机柜的内部。风扇单元包括风扇，单元壳体和连接器。风扇具有框架构件和支撑在框架构件上的马达。马达具有旋转轴，叶轮安装在旋转轴上。叶轮由电机旋转以产生空气流。单元壳体通过树脂模制一体形成。单元壳体具有前板，后板，下板，第一侧板，第二侧板和上开口的大致长方体形的箱形。单元壳体具有凹入的风扇安装部分，其具有在下板内的上开口，用于接合地容纳风扇。下板在其对应于风扇安装部分的底表面的部分具有用于允许由风扇产生的空气流通过的通风口。连接器设置为与电气设备电连接。连接器安装在后板上，使连接器的一部分露出。

6. 发明授权

US5242844A Semiconductor device with polycrystalline silicon active region and method of fabrication thereof 失效
标题翻译：具有多晶硅有源区的半导体器件及其制造方法
公开(公告)号：US5242844A
公开(公告)日：1993-09-07
申请号：US643504
申请日：1991-01-22
申请人： Hisao Hayashi
发明人： Hisao Hayashi
IPC分类号： H01L21/8238 , H01L27/06 , H01L27/092 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： H01L21/8238 , H01L27/0688 , H01L27/0922 , H01L27/1203 , H01L29/04 , H01L29/78675
摘要： A polycrystalline silicon layer is used to allow simultaneous fabrication of both N- and P-type MOSFET's on a common channel layer during integrated circuit fabrication. The polysilicon layer is between 20.ANG. and 750.ANG. thick, and preferably between 200.ANG. and 500.ANG. thick. These dimensions afford the polysilicon layer the high effective mobility, low threshold voltage and low leakage current characteristics, especially if the vapor-deposited polysilicon layer is annealed and/or ion implanted with Si.sup.+ or Ge.sup.+ after deposition. Application of the polysilicon layer over adjoining insulating and P-type semiconducting areas allows the single polysilicon layer to serve as active terminals and channels of both conductivity types of MOS transistors without intervening insulating or semiconducting layers. Deposition of the polysilicon layer in direct contact with a single-crystal substrate enhances the beneficial electrical properties of the polysilicon layer, especially if the polysilicon layer is annealed following deposition.
摘要翻译：多晶硅层用于在集成电路制造期间在公共沟道层上同时制造N型和P型MOSFET两者。多晶硅层的厚度介于20和750之间，优选在200和500之间。这些尺寸使得多晶硅层具有高的有效迁移率，低的阈值电压和低的漏电流特性，特别是如果沉积后气相沉积的多晶硅层被退火和/或离子注入Si +或Ge +。在邻接的绝缘和P型半导体区域上施加多晶硅层允许单个多晶硅层用作两个导电类型的MOS晶体管的有源端子和沟道，而不需要绝缘或半导体层。与单晶衬底直接接触的多晶硅层的沉积增强了多晶硅层的有益的电性能，特别是如果多晶硅层在沉积后退火的话。

7. 发明授权

US5096854A Method for polishing a silicon wafer using a ceramic polishing surface having a maximum surface roughness less than 0.02 microns 失效
标题翻译：使用陶瓷抛光表面抛光硅波的方法具有小于0.02微米的最大表面粗糙度
公开(公告)号：US5096854A
公开(公告)日：1992-03-17
申请号：US367637
申请日：1989-06-19
申请人： Yuichi Saito , Shinsuke Sakai , Hisao Hayashi , Takeshi Matsushita
发明人： Yuichi Saito , Shinsuke Sakai , Hisao Hayashi , Takeshi Matsushita
IPC分类号： B24B37/04 , H01L21/306
CPC分类号： H01L21/3212 , B24B37/042 , H01L21/02024 , Y10S148/051 , Y10S977/831 , Y10S977/888
摘要： The present invention relates to a method for polishing a silicon wafer. The method comprises the steps of: (a) supplying a polishing fluid to a polishing surface, the polishing fluid including an alkaline fluid and polishing particles of high-purity silica dispersed in the alkaline fluid, the polishing surface being planar; (b) bringing a silicon wafer in contact with the polishing surface; and (c) moving at least one of the silicon wafer and the polishing surface relative to the other, thereby polishing the silicon wafer. The method is characterized by the following: the polishing surface is made of a ceramic material harder than the silicon wafer and more resistant to mechanochemical polishing than silicon, and the maximum roughness of the ceramic is less than 0.02 .mu.m.

8. 发明授权

US4496057A Rack structure for mounting a communication apparatus 失效
标题翻译：用于安装通信设备的机架结构
公开(公告)号：US4496057A
公开(公告)日：1985-01-29
申请号：US514027
申请日：1983-07-15
申请人： Hideki Zenitani , Akira Oka , Itsuo Okamoto , Hisao Hayashi , Masajiro Taniguchi
发明人： Hideki Zenitani , Akira Oka , Itsuo Okamoto , Hisao Hayashi , Masajiro Taniguchi
IPC分类号： H05K7/18 , A47F7/00
CPC分类号： H05K7/186
摘要： A rack for mounting a communication apparatus. The rack comprises a pair of right and left vertical side frames and a plurality of block-mounting plates for mounting at least one block which houses at least one printed board. The block-mounting plates are rectangular and are longitudinally disposed between the right and left vertical side frames. The at least one block is mounted on the front face of the block-mounting plates. The upper and lower portions of the block-mounting plates are folded frontward so as to form an upper reinforcing rim and a lower reinforcing rim. The right and left vertical side frames have an L-shaped horizontal cross section. The folded edges of the L-shaped right and left vertical side frames are arranged inward so as to face each other. The block-mounting plates have securing members along the left edge and the right edge thereof. The securing members project backward and have an L-shaped horizontal cross section. The folded edges of the L-shaped securing members are arranged inward so as to face each other. The depth of the L-shaped securing members which project behind the block-mounting plates is determined in accordance with the depth of the at least one block to be mounted on the block-mounting plates. The folded edge of each L-shaped securing member is secured to the folded edges of each L-shaped vertical side frame.
摘要翻译：用于安装通信装置的机架。机架包括一对左右垂直侧框架和多个块安装板，用于安装至少一个容纳至少一个印刷板的块。块安装板是矩形的并纵向设置在左右垂直侧框架之间。至少一个块安装在块安装板的前表面上。块安装板的上部和下部向前折叠，以形成上加强边缘和下加强边缘。右侧和左侧垂直侧框架具有L形水平横截面。 L形的左右垂直侧框架的折叠边缘彼此面对地布置。块安装板具有沿着其左边缘和右边缘的固定构件。固定件向后突出并具有L形横截面。 L形固定构件的折叠边缘彼此面对地布置。根据要安装在块安装板上的至少一个块的深度来确定突出在块安装板后面的L形固定构件的深度。每个L形固定构件的折叠边缘固定在每个L形垂直侧框架的折叠边缘上。

9. 发明授权

US4043267A Rocket bullet 失效
标题翻译：火箭弹
公开(公告)号：US4043267A
公开(公告)日：1977-08-23
申请号：US488442
申请日：1974-07-15
申请人： Hisao Hayashi
发明人： Hisao Hayashi
IPC分类号： F42B5/02 , F42B7/08 , F42B7/10
CPC分类号： F42B7/08 , F42B7/10
摘要： A firearm cartridge assembly consists of a casing having a bullet mounted in one end and an explosive charge in the opposite end with a wad extending between the two end elements. The wad has a generally cylindrical configuration and includes a first end and a second end each containing a similarly shaped recess. The first end in the assembled position contacts the explosive charge and the second end contacts the trailing end surface of the bullet. Located between and spaced axially from the ends of the wad is a centrally located disc-shaped section extending transversely of the axis extending between the ends and having an outer periphery generally conforming to and in surface contact with the inner surface of the casing so that the disc-shaped section forms a seal with the casing against gas leakage when the charge is exploded. In addition, spring sections, compressible in the axial direction of the casing, are located one between the first end and the disc-shaped section and the other between the opposite side of the disc-shaped section and the second end. Preferably the wad is integrally formed from a plastic material and it is symmetrical on the opposite sides of the disc-shaped section.
摘要翻译：枪支弹药筒组件由一个套管组成，该套管具有一端安装的子弹，另一端具有一个爆炸装药，一个在两个端部元件之间延伸的焊盘。筘具有大致圆柱形的构造，并且包括第一端和第二端，每个端部均包含类似形状的凹部。组装位置的第一端接触炸药，第二端接触子弹的尾端表面。位于两端之间并与其两端轴向间隔开的中心位置的圆盘状部分横向延伸延伸的两端之间的轴线，并具有大致与外壳的内表面一致并且与表面接触的外周，当电荷爆炸时，盘形部分与壳体形成密封，防止气体泄漏。此外，可沿壳体的轴向压缩的弹簧部分位于第一端和盘形部分之间，另一方位于盘形部分的相对侧和第二端之间。优选的是，整体由塑料材料形成，并且其在盘形部分的相对侧上是对称的。

10. 发明申请

US20100264422A1 Thin film semiconductor device, display device using such thin film semiconductor device and manufacturing method thereof 有权
标题翻译：薄膜半导体器件，使用这种薄膜半导体器件的显示器件及其制造方法
公开(公告)号：US20100264422A1
公开(公告)日：2010-10-21
申请号：US12801791
申请日：2010-06-25
申请人： Hisao Hayashi , Masahiro Fujino , Yasushi Shimogaichi , Makoto Takatoku
发明人： Hisao Hayashi , Masahiro Fujino , Yasushi Shimogaichi , Makoto Takatoku
IPC分类号： H01L33/00 , H01L29/786
CPC分类号： H01L27/1222 , G02F1/13454 , H01L27/12 , H01L29/42384 , H01L29/66765 , H01L29/78645 , H01L29/78678
摘要： A thin film semiconductor device formed as integrated circuits on an insulating substrate with bottom gate type thin film transistors stacked with gate electrodes, a gate insulating film and a semiconductor thin film in the order from below upward. The gate electrodes comprise metallic materials with thickness less than 100 nm. The gate insulating film has a thickness thicker than the gate electrodes. The semiconductor thin film comprises polycrystalline silicon crystallized by a laser beam. By reducing thickness of metallic gate electrodes, thermal capacity becomes small and difference in thermal condition on the metallic gate electrodes and on the insulating substrate made of glass or the like becomes small. This invention relates to the task of uniforming and optimizing recrystallization by a laser anneal treatment provided for the semiconductor thin film which works as an active layer of the bottom gate type thin film transistors.
摘要翻译：一种薄膜半导体器件，其形成为在具有从栅极电极，栅极绝缘膜和半导体薄膜堆叠的底栅型薄膜晶体管的绝缘基板上以从下向上的顺序形成为集成电路。栅电极包括厚度小于100nm的金属材料。栅极绝缘膜的厚度比栅电极厚。半导体薄膜包括通过激光束结晶的多晶硅。通过减小金属栅电极的厚度，热容量变小，并且金属栅电极和由玻璃等制成的绝缘基板上的热条件差异变小。本发明涉及通过对作为底栅型薄膜晶体管的有源层的半导体薄膜提供的激光退火处理进行均匀化和优化再结晶的任务。

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