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    • 3. 发明授权
    • Active-matrix substrate
    • 有源矩阵衬底
    • US5585951A
    • 1996-12-17
    • US172644
    • 1993-12-23
    • Kazuhiro NodaShinji NakamuaHisao HayashiHisashi Kadota
    • Kazuhiro NodaShinji NakamuaHisao HayashiHisashi Kadota
    • G02F1/1362G02F1/1333G02F1/136
    • G02F1/136227G02F1/136209G02F2001/136222
    • An active-matrix substrate has a layered structure in which an upper region including a plurality of pixel electrodes arranged in a matrix and a lower region including a plurality of thin film transistors for driving the individual pixel electrodes are overlapped on each other. A planarization layer is interposed between both of the substrates. An active-matrix liquid crystal display device includes a main substrate and a facing substrate which are disposed to face to each other at a specified interval. A liquid crystal layer having a specified thickness is held between both of the substrates. A device bus line area including a plurality of thin film transistor devices and bus lines is formed on the surface of the main substrate. A planarization layer is formed to embed the irregularities on the surface of the device bus line area. Pixel electrodes in a matrix are formed on the flat surface of the planarization layer. An interval dimension between the adjacent pixel electrodes is set to be larger than a thickness dimension B of the liquid crystal layer, so that the subsidiary lateral electric field is made smaller than the normal vertical electric field.
    • 有源矩阵基板具有层叠结构,其中包括排列成矩阵的多个像素电极的上部区域和包括用于驱动各个像素电极的多个薄膜晶体管的下部区域彼此重叠。 在两个基板之间插入平坦化层。 有源矩阵液晶显示装置包括以指定间隔彼此相对设置的主基板和面对基板。 具有特定厚度的液晶层保持在两个基板之间。 在主基板的表面上形成包括多个薄膜晶体管器件和总线的器件总线线路区域。 形成平坦化层以将不规则物嵌入设备总线区域的表面上。 在平坦化层的平坦表面上形成矩阵中的像素电极。 相邻像素电极之间的间隔尺寸被设定为大于液晶层的厚度尺寸B,使得辅助横向电场小于正常垂直电场。
    • 9. 发明授权
    • Shift register and display device
    • 移位寄存器和显示设备
    • US07283117B2
    • 2007-10-16
    • US10780748
    • 2004-02-19
    • Kazuhiro Noda
    • Kazuhiro Noda
    • G09G3/36
    • G09G3/3688G09G3/3677G09G2310/0267G09G2310/0275G09G2310/0286G09G2320/0252G09G2330/021G11C19/00G11C19/28
    • A shift register includes unit circuits cascade-connected to form a plurality of shift stages. Each of the unit circuits has a time-shifter including a NAND circuit to receive an input pulse as one input, and a holder having a PMOS transistor and a NMOS transistor, connected in series between a power supply and a clock input of which gates and drains are mutually connected in common respectively. The input of the holder is connected to the output of the NAND circuit, and the output thereof is fed as another input to the NAND circuit. The odd-stage unit circuits and the even-stage unit circuits operate in synchronism respectively with clock pulses having a ¼ phase difference from each other. In this structure, the number of transistors between the positive and negative power supplies can be reduced for lowering the required supply voltage and accelerating the shift register operation.
    • 移位寄存器包括级联连接以形成多个移位级的单元电路。 每个单元电路具有包括接收作为一个输入的输入脉冲的NAND电路的时移器和具有PMOS晶体管和NMOS晶体管的保持器,串联连接在电源和时钟输入之间,栅极和 排水口分别相通。 保持器的输入连接到NAND电路的输出端,其输出作为另一个输入馈送到NAND电路。 奇数级单元电路和偶数级单元电路分别与彼此具有¼相位差的时钟脉冲同步工作。 在这种结构中,可以减小正电源和负电源之间的晶体管的数量,以降低所需的电源电压并加速移位寄存器的操作。