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1. 发明授权

US4751142A Magneto-optical recording element 失效
标题翻译：磁光记录元件
公开(公告)号：US4751142A
公开(公告)日：1988-06-14
申请号：US908272
申请日：1986-09-17
申请人： Hisao Arimune , Mitsuo Miyazaki , Takashi Maeda
发明人： Hisao Arimune , Mitsuo Miyazaki , Takashi Maeda
IPC分类号： G11B11/105 , G11B7/24
CPC分类号： G11B11/10586 , Y10S428/90 , Y10T428/265
摘要： Disclosed is a magneto-optical recording element comprising a magnetic film composed of an alloy having a composition represented by the following formula:(Gd.sub.y Dy.sub.1-y).sub.x Fe.sub.1-x (0.15.ltoreq.x.ltoreq.0.35 and 0.30.ltoreq.y.ltoreq.0.95)This magnetic film is characterized in that the nuclear magnetic field, coercive force and saturation magnetic filed in the Kerr hysteresis loop are substantially same at temperatures higher than 100.degree. C.
摘要翻译：公开了一种磁光记录元件，其包括由具有由下式表示的组成的合金构成的磁性膜：（GdyDy1-y）xFe1-x（0.15≤x≤0.35和0.30

2. 发明授权

US4995024A Magneto-optical recording element 失效
标题翻译：磁光记录元件
公开(公告)号：US4995024A
公开(公告)日：1991-02-19
申请号：US264159
申请日：1988-10-28
申请人： Hisao Arimune , Takashi Maeda , Mitsuo Miyazaki , Yasuo Nishiguchi
发明人： Hisao Arimune , Takashi Maeda , Mitsuo Miyazaki , Yasuo Nishiguchi
IPC分类号： G11B11/105
CPC分类号： G11B11/10582 , Y10S428/90
摘要： Disclosed is a magneto-optical recording element comprising a dielectric layer and an amorphous perpendicular magnetization film on a substrate, wherein the perpendicular magnetization film is a perpendicular magnetization film comprising at least Gd element as the rare earth metal element and Fe metal as the transition metal component, in which the Fe sub-lattice moments are dominant, the dielectric layer is a dielectric layer composed of amorphous silicon nitride, the magnetization Ms of the perpendicular magnetization film is set within a range represented by the following formula (1):20 emu/cc.ltoreq.Ms.ltoreq.70 emu/cc (1)and the product of the magnetization Ms and the coercive force Hc is set within a range represented by the following formula (2):100 emu.multidot.KOe/cc.ltoreq.Ms.multidot.Hc.ltoreq.500 emu.multidot.KOe/cc(2)This magneto-optical recording material is suitable for the magnetic field modulation recording method, and even if overwriting is carried out in the recording method, the element shows excellent characteristics and high performances.
摘要翻译：公开了一种磁光记录元件，其包括在基板上的电介质层和非晶垂直磁化膜，其中垂直磁化膜是至少包括作为稀土金属元素的Gd元素和作为过渡金属的Fe金属的垂直磁化膜其中Fe子晶格矩是主要的，介电层是由非晶氮化硅构成的电介质层，垂直磁化膜的磁化强度Ms设定在由下式（1）表示的范围内：20emu / cc

3. 发明授权

US4954232A Magneto-optical recording element and method for fabrication thereof 失效
标题翻译：磁光记录元件及其制造方法
公开(公告)号：US4954232A
公开(公告)日：1990-09-04
申请号：US358554
申请日：1989-05-26
申请人： Takashi Yamada , Hisao Arimune , Takashi Maeda
发明人： Takashi Yamada , Hisao Arimune , Takashi Maeda
IPC分类号： G03G5/16 , G11B5/73 , G11B5/738 , G11B11/105 , C23C14/14
CPC分类号： G11B5/7325 , G03G5/16 , G11B11/10586 , G11B11/10591 , G11B5/738
摘要： In a magneto-optical recording element comprising a substrate, a magnetic layer and a dielectric layer, the dielectric layer is formed by deposition of a composition comprising Si.sub.3 N.sub.4 and a refractive index-improving agent such as Al.sub.2 O.sub.3 or Y.sub.2 O.sub.3. This dielectric layer has a high refractive index and the enhancement effect is improved. Moreover, this dielectric layer is excellent in the adhesion and resistance characteristics.

4. 发明授权

US4851096A Method for fabricating a magneto-optical recording element 失效
标题翻译：磁光记录元件的制造方法
公开(公告)号：US4851096A
公开(公告)日：1989-07-25
申请号：US42273
申请日：1987-04-24
申请人： Takashi Yamada , Hisao Arimune , Takashi Maeda
发明人： Takashi Yamada , Hisao Arimune , Takashi Maeda
IPC分类号： G03G5/16 , G11B5/73 , G11B5/738 , G11B11/105 , C23C14/14
CPC分类号： G11B5/7325 , G03G5/16 , G11B11/10586 , G11B11/10591 , G11B5/738
摘要： In a magneto-optical recording element comprising a substrate, a magentic layer and a dielectric layer, the dielectric layer is formed by deposition of a composition comprising Si.sub.3 H.sub.4 and a refractive index-improving agent such as Al.sub.2 O.sub.3 or Y.sub.2 O.sub.3. This dielectric layer has a high refractive index and the enhancement effect is improved. Moreover, this dielectric layer is excellent in the adhesion and resistance characteristics.
摘要翻译：在包括基板，磁性层和电介质层的磁光记录元件中，通过沉积包括Si 3 H 4和诸如Al 2 O 3或Y 2 O 3的折射率改进剂的组合物形成电介质层。该介电层具有高折射率，并且提高了增强效果。此外，该电介质层的粘合性和电阻特性优异。

5. 发明授权

US4680742A Magneto-optical recording element 失效
标题翻译：磁光记录元件
公开(公告)号：US4680742A
公开(公告)日：1987-07-14
申请号：US752927
申请日：1985-07-08
申请人： Takashi Yamada , Hisao Arimune , Takashi Maeda
发明人： Takashi Yamada , Hisao Arimune , Takashi Maeda
IPC分类号： G03G5/16 , G11B5/73 , G11B5/738 , G11B11/105 , G11B7/24 , G11B5/64
CPC分类号： G11B5/7325 , G03G5/16 , G11B11/10586 , G11B11/10591 , G11B5/738 , Y10S430/146
摘要： In a magneto-optical recording element comprising a substrate, a magnetic layer and a dielectric layer, the dielectric layer is formed by deposition of a composition comprising Si.sub.3 N.sub.4 and a refractive index-improving agent such as Al.sub.2 O.sub.3 or Y.sub.2 O.sub.3. This dielectric layer has a high refractive index and the enhancement effect is improved. Moreover, this dielectric layer is excellent in the adhesion and resistance characteristics.
摘要翻译：在包括基板，磁性层和电介质层的磁光记录元件中，通过沉积包含Si 3 N 4和诸如Al 2 O 3或Y 2 O 3的折射率改进剂的组合物形成电介质层。该介电层具有高折射率，并且提高了增强效果。此外，该电介质层的粘合性和电阻特性优异。

6. 发明申请

US20130247964A1 PHOTOELECTRIC CONVERSION MODULE 审中-公开
标题翻译：光电转换模块
公开(公告)号：US20130247964A1
公开(公告)日：2013-09-26
申请号：US13990720
申请日：2011-11-29
申请人： Yosuke Inomata , Masahiro Yokota , Shintaro Mitsuno , Norihiko Matsushima , Hisao Arimune
发明人： Yosuke Inomata , Masahiro Yokota , Shintaro Mitsuno , Norihiko Matsushima , Hisao Arimune
IPC分类号： H01L31/048
CPC分类号： H01L31/0463 , H01L31/0201 , H01L31/02013 , H01L31/046 , H01L31/048 , H02S40/34 , Y02E10/50
摘要： A photoelectric conversion module is disclosed. The photoelectric conversion module includes a photoelectric conversion panel and a moisture barrier plate. The photoelectric conversion panel includes first and second surfaces, a photoelectric converter between the first and second surfaces, and a conductive lead. An opening is located on the first surface. The moisture barrier plate is located on the second surface and includes first and second principal surfaces, and a through-hole extending from the first principal surface to the second principal surface. The moisture barrier plate covers the one principal surface. The through-hole does not overlap the opening. A filling member is located in a gap between the first surface and the first principal surface. The conductive lead goes through a part of the filling member, and has an end electrically coupled to the photoelectric converter and the other end coming out through the opening to the exterior.
摘要翻译：公开了一种光电转换模块。光电转换模块包括光电转换面板和防潮板。光电转换面板包括第一表面和第二表面，第一表面和第二表面之间的光电转换器和导电引线。一个开口位于第一个表面上。防潮板位于第二表面上并且包括第一和第二主表面以及从第一主表面延伸到第二主表面的通孔。防潮板覆盖一个主表面。通孔不与开口重叠。填充构件位于第一表面和第一主表面之间的间隙中。导电引线穿过填充构件的一部分，并且具有电耦合到光电转换器的端部，另一端通过开口到达外部。

7. 发明授权

US07402747B2 Photoelectric conversion device and method of manufacturing the device 失效
标题翻译：光电转换装置及其制造方法
公开(公告)号：US07402747B2
公开(公告)日：2008-07-22
申请号：US10781355
申请日：2004-02-18
申请人： Shin Sugawara , Atsuo Hatate , Akiko Komoda , Hisao Arimune
发明人： Shin Sugawara , Atsuo Hatate , Akiko Komoda , Hisao Arimune
IPC分类号： H01L31/00 , H02N6/00 , E04B5/48
CPC分类号： H01L31/1804 , H01L31/035281 , H01L31/03762 , H01L31/03921 , H01L31/072 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： There is disclosed a photoelectric conversion device comprising a substrate 1 serving as a lower electrode; first conductivity-type crystalline semiconductor particles 3 deposited on the substrate; second conductivity-type semiconductor layers 4 formed on the crystalline semiconductor particles 3; an insulator layer 2 formed among the crystalline semiconductor particles; and an upper electrode layer 5 formed on the second conductivity-type semiconductor layers 4, wherein the second conductivity-type semiconductor layers 4 each have a smaller thickness at or below an equator of each of the crystalline semiconductor particles than at a zenith region thereof, and the second conductivity-type semiconductor layers 4 include an impurity element with a concentration gradient decreasing with proximity to the crystalline semiconductor particles.
摘要翻译：公开了一种光电转换装置，其包括用作下电极的基板1; 沉积在基板上的第一导电型晶体半导体颗粒3; 形成在结晶半导体粒子3上的第二导电型半导体层4; 形成在所述结晶半导体颗粒之间的绝缘体层2; 以及形成在第二导电型半导体层4上的上电极层5，其中第二导电型半导体层4在每个晶体半导体颗粒的赤道处或下方的厚度比在其顶点区域具有更小的厚度，并且第二导电型半导体层4包括具有随着接近结晶半导体颗粒而减小的浓度梯度的杂质元素。

8. 发明申请

US20120174957A1 Photoelectric Conversion Device and Manufacturing Method of the Same 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20120174957A1
公开(公告)日：2012-07-12
申请号：US13133138
申请日：2010-09-29
申请人： Daisuke Nishimura , Toshifumi Sugawara , Ken Nishiura , Norihiko Matsushima , Yosuke Inomata , Hisao Arimune , Tsuyoshi Uesugi
发明人： Daisuke Nishimura , Toshifumi Sugawara , Ken Nishiura , Norihiko Matsushima , Yosuke Inomata , Hisao Arimune , Tsuyoshi Uesugi
IPC分类号： H01L31/042 , H01L31/0264
CPC分类号： H01L31/022425 , H01L31/046 , H01L31/0465 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： To provide a photoelectric conversion device having a high photoelectric conversion efficiency, a photoelectric conversion device 21 includes a substrate 1, a plurality of lower electrodes 2 on the substrate 1 comprising a metal element, a plurality of photoelectric conversion layers 33 comprising a chalcogen compound semiconductor formed on the plurality of lower electrodes 2 and separated from one another on the lower electrodes 2, a metal-chalcogen compound layer 8 comprising the metal element and a chalcogen element included in the chalcogen compound semiconductor formed between the lower electrode 2 and the photoelectric conversion layer 33, an upper electrode 5 formed on the photoelectric conversion layer 33, and a connection conductor 7 electrically connecting, in a plurality of the photoelectric conversion layers 33, the upper electrode 5 to the lower electrode 2 without interposition of the metal-chalcogen compound layer 8.
摘要翻译：为了提供具有高光电转换效率的光电转换装置，光电转换装置21包括基板1，包括金属元件的基板1上的多个下电极2，包括硫属化合物半导体的多个光电转换层33 形成在多个下电极2上并在下电极2上彼此分离，包括金属元素化合物层8和包含在下电极2和光电转换器之间的硫属化合物半导体中的硫属元素层33，形成在光电转换层33上的上电极5和连接导体7，在多个光电转换层33中电连接上电极5与下电极2而不插入金属 - 硫属化合物第8层。

9. 发明授权

US06552405B2 Photoelectric conversion device and manufacturing method thereof 失效
标题翻译：光电转换装置及其制造方法
公开(公告)号：US06552405B2
公开(公告)日：2003-04-22
申请号：US09916868
申请日：2001-07-26
申请人： Shin Sugawara , Takeshi Kyoda , Hisao Arimune
发明人： Shin Sugawara , Takeshi Kyoda , Hisao Arimune
IPC分类号： H01L3106
CPC分类号： H01L31/1804 , H01L31/028 , H01L31/035281 , H01L31/061 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： A photoelectric conversion device according to the present invention comprises an aluminum substrate or a substrate formed with an aluminum layer thereon, numerous p type crystalline semiconductor particles deposited on the substrate, an insulator interposed among the numerous p type crystalline semiconductor particles, and a n type semiconductor region formed on the upper portions of the p type crystalline semiconductor particles. An alloy portion comprising the aluminum and the semiconductor material is formed in a boundary part between the aluminum layer and the p type crystalline semiconductor particles, and a p+ region is formed in an interfacial part between the alloy portion and the p type crystalline semiconductor particle on the side of the p type crystalline semiconductor particle. Accordingly, reliability of the joining condition between the substrate and the crystalline semiconductor particles can be improved, thereby realizing a photoelectric conversion device having high conversion efficiency.
摘要翻译：根据本发明的光电转换装置包括铝基板或在其上形成有铝层的基板，沉积在基板上的许多p型晶体半导体颗粒，插入在多个p型晶体半导体颗粒中的绝缘体和类型半导体区域形成在p型结晶半导体颗粒的上部。在铝层和p型结晶半导体颗粒之间的边界部分中形成包含铝和半导体材料的合金部分，并且在合金部分和p型晶体半导体颗粒之间的界面部分中形成p +区域 p型结晶半导体颗粒的侧面。因此，可以提高基板和结晶半导体颗粒之间的接合条件的可靠性，从而实现具有高转换效率的光电转换装置。

10. 发明授权

US4645722A Photo-thermo-magnetic recording medium and method of preparing same 失效
标题翻译：光热磁记录介质及其制备方法
公开(公告)号：US4645722A
公开(公告)日：1987-02-24
申请号：US653724
申请日：1984-09-21
申请人： Toshikazu Katayama , Tsugio Shibata , Hisao Arimune
发明人： Toshikazu Katayama , Tsugio Shibata , Hisao Arimune
IPC分类号： G11B11/10 , G03G5/16 , G11B5/66 , G11B11/105 , G11B7/24
CPC分类号： G03G5/16 , G11B11/10586 , G11B11/10591 , G11B5/66 , Y10S428/90 , Y10S428/928
摘要： A recording medium suitable for use in a photo-thermo-magnetic memory of high density recording, including a substrate; a first magnetic layer, such as an amorphous TbFe film, which has a large coercive force and whose axis of easy magnetization is oriented in the direction perpendicular to the surface of the first layer; and a second magnetic layer, such as an amorphous GdTbCoFe film, having (i) a larger polar Kerr rotation or reflection than that of the first layer, (ii) the same polarity of polar Kerr rotation as that of the first layer, (iii) a direction of its magnetic moment aligned in parallel with that of the first layer and (iv) a thickness permitting the transmittance of a light, such as laser beam, therethrough and being magnetically coupled with the first layer by an exchange interaction therebetween; the first and second magnetic layers being superimposed on the substrate in that order or in the inverse order. Such a recording medium can be suitably prepared by re-sputtering or ion-bombardment techniques.
摘要翻译：一种适用于高密度记录光热存储器的记录媒体，包括基片; 诸如非晶形TbFe膜的第一磁性层，其具有较大的矫顽力，并且易磁化的轴在垂直于第一层的表面的方向上取向; 以及具有（i）比第一层的极性克尔旋转或反射更大的极性克尔旋转或反射的第二磁性层，例如非晶GdTbCoFe膜，（ii）与第一层相同的极性克尔旋转极性，（iii ）其磁矩的方向与第一层的平行方向平行;以及（iv）允许诸如激光束之类的光的透射的厚度，并通过它们之间的交换相互作用与第一层磁耦合; 第一和第二磁性层按照该顺序或以相反的顺序重叠在基板上。这样的记录介质可以通过再溅射或离子轰击技术适当地制备。

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