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1. 发明授权

US08674210B2 Photoelectric conversion device and manufacturing method of the same 有权
标题翻译：光电转换装置及其制造方法相同
公开(公告)号：US08674210B2
公开(公告)日：2014-03-18
申请号：US13133138
申请日：2010-09-29
申请人： Daisuke Nishimura , Toshifumi Sugawara , Ken Nishiura , Norihiko Matsushima , Yosuke Inomata , Hisao Arimune , Tsuyoshi Uesugi
发明人： Daisuke Nishimura , Toshifumi Sugawara , Ken Nishiura , Norihiko Matsushima , Yosuke Inomata , Hisao Arimune , Tsuyoshi Uesugi
IPC分类号： H01L31/042 , H02N6/00 , H01L31/00 , H01L21/00
CPC分类号： H01L31/022425 , H01L31/046 , H01L31/0465 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： To provide a photoelectric conversion device having a high photoelectric conversion efficiency, a photoelectric conversion device 21 includes a substrate 1, a plurality of lower electrodes 2 on the substrate 1 comprising a metal element, a plurality of photoelectric conversion layers 33 comprising a chalcogen compound semiconductor formed on the plurality of lower electrodes 2 and separated from one another on the lower electrodes 2, a metal-chalcogen compound layer 8 comprising the metal element and a chalcogen element included in the chalcogen compound semiconductor formed between the lower electrode 2 and the photoelectric conversion layer 33, an upper electrode 5 formed on the photoelectric conversion layer 33, and a connection conductor 7 electrically connecting, in a plurality of the photoelectric conversion layers 33, the upper electrode 5 to the lower electrode 2 without interposition of the metal-chalcogen compound layer 8.
摘要翻译：为了提供具有高光电转换效率的光电转换装置，光电转换装置21包括基板1，包括金属元件的基板1上的多个下电极2，包括硫属化合物半导体的多个光电转换层33 形成在多个下电极2上并在下电极2上彼此分离，包括金属元素化合物层8和包含在下电极2和光电转换器之间的硫属化合物半导体中的硫属元素层33，形成在光电转换层33上的上电极5和连接导体7，在多个光电转换层33中电连接上电极5与下电极2而不插入金属 - 硫属化合物第8层。

2. 发明申请

US20120174957A1 Photoelectric Conversion Device and Manufacturing Method of the Same 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20120174957A1
公开(公告)日：2012-07-12
申请号：US13133138
申请日：2010-09-29
申请人： Daisuke Nishimura , Toshifumi Sugawara , Ken Nishiura , Norihiko Matsushima , Yosuke Inomata , Hisao Arimune , Tsuyoshi Uesugi
发明人： Daisuke Nishimura , Toshifumi Sugawara , Ken Nishiura , Norihiko Matsushima , Yosuke Inomata , Hisao Arimune , Tsuyoshi Uesugi
IPC分类号： H01L31/042 , H01L31/0264
CPC分类号： H01L31/022425 , H01L31/046 , H01L31/0465 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： To provide a photoelectric conversion device having a high photoelectric conversion efficiency, a photoelectric conversion device 21 includes a substrate 1, a plurality of lower electrodes 2 on the substrate 1 comprising a metal element, a plurality of photoelectric conversion layers 33 comprising a chalcogen compound semiconductor formed on the plurality of lower electrodes 2 and separated from one another on the lower electrodes 2, a metal-chalcogen compound layer 8 comprising the metal element and a chalcogen element included in the chalcogen compound semiconductor formed between the lower electrode 2 and the photoelectric conversion layer 33, an upper electrode 5 formed on the photoelectric conversion layer 33, and a connection conductor 7 electrically connecting, in a plurality of the photoelectric conversion layers 33, the upper electrode 5 to the lower electrode 2 without interposition of the metal-chalcogen compound layer 8.
摘要翻译：为了提供具有高光电转换效率的光电转换装置，光电转换装置21包括基板1，包括金属元件的基板1上的多个下电极2，包括硫属化合物半导体的多个光电转换层33 形成在多个下电极2上并在下电极2上彼此分离，包括金属元素化合物层8和包含在下电极2和光电转换器之间的硫属化合物半导体中的硫属元素层33，形成在光电转换层33上的上电极5和连接导体7，在多个光电转换层33中电连接上电极5与下电极2而不插入金属 - 硫属化合物第8层。

3. 发明申请

US20130247964A1 PHOTOELECTRIC CONVERSION MODULE 审中-公开
标题翻译：光电转换模块
公开(公告)号：US20130247964A1
公开(公告)日：2013-09-26
申请号：US13990720
申请日：2011-11-29
申请人： Yosuke Inomata , Masahiro Yokota , Shintaro Mitsuno , Norihiko Matsushima , Hisao Arimune
发明人： Yosuke Inomata , Masahiro Yokota , Shintaro Mitsuno , Norihiko Matsushima , Hisao Arimune
IPC分类号： H01L31/048
CPC分类号： H01L31/0463 , H01L31/0201 , H01L31/02013 , H01L31/046 , H01L31/048 , H02S40/34 , Y02E10/50
摘要： A photoelectric conversion module is disclosed. The photoelectric conversion module includes a photoelectric conversion panel and a moisture barrier plate. The photoelectric conversion panel includes first and second surfaces, a photoelectric converter between the first and second surfaces, and a conductive lead. An opening is located on the first surface. The moisture barrier plate is located on the second surface and includes first and second principal surfaces, and a through-hole extending from the first principal surface to the second principal surface. The moisture barrier plate covers the one principal surface. The through-hole does not overlap the opening. A filling member is located in a gap between the first surface and the first principal surface. The conductive lead goes through a part of the filling member, and has an end electrically coupled to the photoelectric converter and the other end coming out through the opening to the exterior.
摘要翻译：公开了一种光电转换模块。光电转换模块包括光电转换面板和防潮板。光电转换面板包括第一表面和第二表面，第一表面和第二表面之间的光电转换器和导电引线。一个开口位于第一个表面上。防潮板位于第二表面上并且包括第一和第二主表面以及从第一主表面延伸到第二主表面的通孔。防潮板覆盖一个主表面。通孔不与开口重叠。填充构件位于第一表面和第一主表面之间的间隙中。导电引线穿过填充构件的一部分，并且具有电耦合到光电转换器的端部，另一端通过开口到达外部。

4. 发明授权

US08975506B2 Solar cell module and photovoltaic power generator using the same 有权
标题翻译：太阳能电池组件和光伏发电机使用相同
公开(公告)号：US08975506B2
公开(公告)日：2015-03-10
申请号：US13273056
申请日：2011-10-13
申请人： Shuichi Fujii , Yosuke Inomata , Tomonari Sakamoto , Koichiro Niira , Yuko Fukawa , Hiroshi Morita , Koji Nishi , Tatsuya Yashiki , Mitsuo Yamashita , Kenji Fukui
发明人： Shuichi Fujii , Yosuke Inomata , Tomonari Sakamoto , Koichiro Niira , Yuko Fukawa , Hiroshi Morita , Koji Nishi , Tatsuya Yashiki , Mitsuo Yamashita , Kenji Fukui
IPC分类号： H01L31/042 , H01L31/02 , H01L31/05 , H01L31/0224 , H01L31/048
CPC分类号： H01L31/0201 , H01L31/02013 , H01L31/022433 , H01L31/048 , H01L31/049 , H01L31/0504 , H01L31/0508 , Y02E10/50
摘要： A surface electrode (5) is installed on the light receiving surface of a solar cell element, the surface electrode (5) comprises three bus bar electrodes (5a) for extracting light-produced at the solar cell element to the outside and collecting finger electrodes (5b) connected to these bus bar electrodes (5a), and the bus bar electrodes (5a) are not less than 0.5 mm and not more than 2 mm in width and the finger electrodes (5b) are not less than 0.05 mm and not more than 0.1 mm in width. A high-efficient solar cell module can be obtained with substantially lowered resistance by increasing the number of bus bar electrode (5a) and thereby decreasing the lengths of the finger electrodes (5b).
摘要翻译：表面电极（5）安装在太阳能电池元件的光接收表面上，表面电极（5）包括三个汇流条电极（5a），用于将在太阳能电池元件处产生的光提取到外部并收集指状电极（5b），汇流条电极（5a）的宽度不小于0.5mm且不大于2mm，手指电极（5b）不小于0.05mm，而不是宽度大于0.1mm。通过增加汇流条电极（5a）的数量，从而减小手指电极（5b）的长度，可以获得具有显着降低的电阻的高效太阳能电池模块。

5. 发明授权

US08975172B2 Solar cell element and method for manufacturing solar cell element 有权
标题翻译：太阳能电池元件及其制造方法
公开(公告)号：US08975172B2
公开(公告)日：2015-03-10
申请号：US12443421
申请日：2007-09-27
申请人： Rui Yatabe , Kenichi Kurobe , Yosuke Inomata
发明人： Rui Yatabe , Kenichi Kurobe , Yosuke Inomata
IPC分类号： H01L31/18 , H01L21/223 , H01L31/068 , H01L31/04 , H01L21/18 , H01L31/0224 , H01L31/0236
CPC分类号： H01L31/1864 , H01L21/18 , H01L21/2252 , H01L21/2255 , H01L31/022425 , H01L31/02363 , H01L31/04 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： [Object] To provide a method for manufacturing a solar cell element including a semiconductor substrate that includes a high-concentration dopant layer located near the surface of the semiconductor substrate and a low-concentration dopant layer located more inside the semiconductor substrate than the high-concentration dopant layer.[Solving Means] A method includes heating a semiconductor substrate having a first conductivity type in a first atmosphere which contains a dopant having a second conductivity type and which has a first dopant concentration; heating in a second atmosphere the semiconductor substrate heated in the first atmosphere, the second atmosphere having a second dopant concentration less than the first dopant concentration; and heating in a third atmosphere the semiconductor substrate heated in the second atmosphere, the third atmosphere having a third dopant concentration greater than the second dopant concentration.
摘要翻译：本发明提供一种太阳能电池元件的制造方法，该太阳能电池元件包括半导体基板，该半导体基板包括位于半导体基板的表面附近的高浓度掺杂剂层和位于半导体基板的内侧的低浓度掺杂剂层，浓度掺杂剂层。解决方法一种方法包括在包含具有第二导电类型且具有第一掺杂剂浓度的掺杂剂的第一气氛中加热具有第一导电类型的半导体衬底; 在第二气氛中加热在第一气氛中加热的半导体衬底，第二气氛具有小于第一掺杂剂浓度的第二掺杂剂浓度; 以及在第三气氛中加热在所述第二气氛中加热的所述半导体衬底，所述第三气氛具有大于所述第二掺杂剂浓度的第三掺杂剂浓度。

6. 发明申请

US20100037946A1 Solar Cell Element and Method for Manufacturing Solar Cell Element 有权
标题翻译：太阳能电池元件及制造太阳能电池元件的方法
公开(公告)号：US20100037946A1
公开(公告)日：2010-02-18
申请号：US12443421
申请日：2007-09-27
申请人： Rui Yatabe , Kenichi Kurobe , Yosuke Inomata
发明人： Rui Yatabe , Kenichi Kurobe , Yosuke Inomata
IPC分类号： H01L31/0236 , H01L31/0232 , H01L31/00
CPC分类号： H01L31/1864 , H01L21/18 , H01L21/2252 , H01L21/2255 , H01L31/022425 , H01L31/02363 , H01L31/04 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： [Object] To provide a method for manufacturing a solar cell element including a semiconductor substrate that includes a high-concentration dopant layer located near the surface of the semiconductor substrate and a low-concentration dopant layer located more inside the semiconductor substrate than the high-concentration dopant layer[Solving Means] A method includes' heating a semiconductor substrate having a first conductivity type in a first atmosphere which contains a dopant having a second conductivity type and which has a first dopant concentration; heating in a second atmosphere the semiconductor substrate heated in the first atmosphere, the second atmosphere having a second dopant concentration less than the first dopant concentration; and heating in a third atmosphere the semiconductor substrate heated in the second atmosphere, the third atmosphere having a third dopant concentration greater than the second dopant concentration.
摘要翻译：本发明提供一种太阳能电池元件的制造方法，该太阳能电池元件包括半导体基板，该半导体基板包括位于半导体基板的表面附近的高浓度掺杂剂层和位于半导体基板的内侧的低浓度掺杂剂层，浓度掺杂剂层[解决方案]一种方法包括：在包含具有第二导电类型且具有第一掺杂剂浓度的掺杂剂的第一气氛中加热具有第一导电类型的半导体衬底; 在第二气氛中加热在第一气氛中加热的半导体衬底，第二气氛具有小于第一掺杂剂浓度的第二掺杂剂浓度; 以及在第三气氛中加热在所述第二气氛中加热的所述半导体衬底，所述第三气氛具有大于所述第二掺杂剂浓度的第三掺杂剂浓度。

7. 发明授权

US07459098B2 Dry etching apparatus, dry etching method, and plate and tray used therein 有权
标题翻译：干蚀刻装置，干法蚀刻法，以及其中使用的板和托盘
公开(公告)号：US07459098B2
公开(公告)日：2008-12-02
申请号：US10650504
申请日：2003-08-27
申请人： Yosuke Inomata , Yuko Fukawa
发明人： Yosuke Inomata , Yuko Fukawa
IPC分类号： H01L21/302
CPC分类号： H01L21/67069 , H01J37/32082 , H01J2237/334
摘要： A dry etching apparatus that performs etching on a substrate 1 placed on a tray 13 inside a chamber 18 by covering the substrate 1 with a plate 14 provided with opening portions 15, in which a distance D between the surface opposing the substrate 1 and the substrate 1 in the peripheral portion of the plate 14 is set shorter than the distance D between the surface opposing the substrate 1 and the substrate 1 in the central portion of the plate 14. Textures can be thus formed homogeneously on the surface of the substrate.
摘要翻译：一种干蚀刻装置，其通过用设置有开口部分15的板14覆盖基板1而在放置在室18内的托盘13上的基板1上进行蚀刻，其中与基板1相对的表面与基板之间的距离D 在板14的周边部分中的距离1被设定为短于板14的中心部分之间的与基板1相对的表面与基板1之间的距离D.因此，可以在基板的表面上均匀地形成纹理。

8. 发明授权

US07128975B2 Multicrystalline silicon substrate and process for roughening surface thereof 有权
标题翻译：多晶硅基板及其粗化工艺
公开(公告)号：US07128975B2
公开(公告)日：2006-10-31
申请号：US10762676
申请日：2004-01-22
申请人： Yosuke Inomata
发明人： Yosuke Inomata
IPC分类号： B32B9/04 , H01L31/00 , B44C1/22
CPC分类号： H01L21/30604 , H01L31/02363 , H01L31/068 , Y02E10/547 , Y10T428/24355
摘要： A surface of a multicrystalline silicon substrate is etched with an alkaline aqueous solution in a condition so that a surface area-to-planar surface area ratio R is smaller than 1.1. A multiplicity of fine textures are formed over the irregularities by dry etching. This allows fine textures to be formed uniformly, and a solar cell with high efficiency can thus be produced.
摘要翻译：用碱性水溶液蚀刻多晶硅衬底的表面，使得表面积 - 平面表面积比R小于1.1。通过干蚀刻在凹凸上形成多个细纹理。这样可以均匀地形成精细的纹理，从而可以生产高效率的太阳能电池。

9. 发明授权

US07556741B2 Method for producing a solar cell 有权
标题翻译：太阳能电池的制造方法
公开(公告)号：US07556741B2
公开(公告)日：2009-07-07
申请号：US10650505
申请日：2003-08-27
申请人： Yosuke Inomata , Yuko Fukawa
发明人： Yosuke Inomata , Yuko Fukawa
IPC分类号： H01L21/306
CPC分类号： H01L21/3065 , H01J37/32091 , H01J2237/334 , H01L21/67069
摘要： A dry etching apparatus including a plate 15 provided in parallel or nearly parallel with an RF electrode 9 to cover a substrate 1 placed on the RF electrode 9 directly or through a tray 24. The plate 15 is provided with planar or nearly planar obstacles 16 that inhibit a gas and plasma from passing through the plate 15 as well as opening portions 19. This makes it possible to achieve conditions under which etching residues attach to the surface of the substrate faster by trapping the etching residues in a space between the surface of the substrate 1 and the plate 15. Fine textures can be thus formed efficiently on the surface of the substrate (FIG. 4).
摘要翻译：一种干蚀刻装置，包括平行或几乎平行于RF电极9的板15，以直接或通过托盘24覆盖放置在RF电极9上的基板1.板15设置有平面或几乎平面的障碍物16，阻止气体和等离子体通过板15以及开口部分19.这使得可以通过将蚀刻残留物捕获在基板的表面之间的空间中来实现蚀刻残留物更快地附着到基板的表面的条件基板1和板15.因此，可以在基板的表面上有效地形成精细的纹理（图4）。

10. 发明授权

US07556740B2 Method for producing a solar cell 有权
标题翻译：太阳能电池的制造方法
公开(公告)号：US07556740B2
公开(公告)日：2009-07-07
申请号：US10648429
申请日：2003-08-26
申请人： Yosuke Inomata , Katsuhiko Shirasawa
发明人： Yosuke Inomata , Katsuhiko Shirasawa
IPC分类号： H01L21/306
CPC分类号： H01J37/32623 , H01J37/32082
摘要： A substrate processing apparatus that roughens the surface of a substrate through a dry etching method by covering the surface of the substrate to be processed with a plate provided with a number of opening portions. The plate is provided with the opening portions in such a manner that an open area ratio of the opening portions on the peripheral side is smaller than an open area ratio of the opening portions in the central portion when the plate is viewed in a plane. It is thus possible to form textures on the surface of the substrate efficiently and homogenously, which in turn makes it possible to manufacture highly efficient solar cells or the like at a low cost.
摘要翻译：一种基板处理装置，其通过用设置有多个开口部的板覆盖被处理基板的表面，通过干法蚀刻法使基板的表面粗糙化。该板以这样一种方式设置开口部分，使得当在平面中观察板时，周边侧的开口部分的开口面积比小于中心部分中的开口部分的开口面积比。因此，可以有效且均匀地在基板的表面上形成纹理，这又可以以低成本制造高效率的太阳能电池等。

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