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1. 发明申请

US20160055891A1 MAGNETIC MEMORY 审中-公开
标题翻译：磁记忆
公开(公告)号：US20160055891A1
公开(公告)日：2016-02-25
申请号：US14593678
申请日：2015-01-09
申请人： Hisanori AIKAWA , Masayoshi IWAYAMA , Akiyuki MURAYAMA , Tatsuya KISHI , Sumio IKEGAWA
发明人： Hisanori AIKAWA , Masayoshi IWAYAMA , Akiyuki MURAYAMA , Tatsuya KISHI , Sumio IKEGAWA
IPC分类号： G11C11/16
CPC分类号： G11C11/161 , G11C11/1655 , G11C11/1675
摘要： According to one embodiment, a magnetic memory includes a memory cell array including magnetoresistive elements, a heater and a temperature sensor provided in the memory cell array, a heater driver which drives the heater, a temperature detector which detects a first temperature sensed by the temperature sensor, and a control circuit which controls the heater driver based on the first temperature.
摘要翻译：根据一个实施例，磁存储器包括存储单元阵列，其包括磁阻元件，设置在存储单元阵列中的加热器和温度传感器，驱动加热器的加热器驱动器，检测由温度感测的第一温度的温度检测器传感器，以及基于第一温度控制加热器驱动器的控制电路。

2. 发明申请

US20130069184A1 MAGNETORESISTIVE ELEMENT AND PRODUCING METHOD THEREOF 有权
标题翻译：磁电元件及其制造方法
公开(公告)号：US20130069184A1
公开(公告)日：2013-03-21
申请号：US13618410
申请日：2012-09-14
申请人： Hisanori AIKAWA , Hiroaki YODA , Masahiko NAKAYAMA , Tatsuya KISHI , Sumio IKEGAWA
发明人： Hisanori AIKAWA , Hiroaki YODA , Masahiko NAKAYAMA , Tatsuya KISHI , Sumio IKEGAWA
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L43/12 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetoresistive element comprises a first magnetic layer, in which a magnetization direction is variable and is perpendicular to a film surface, a tunnel barrier layer that is formed on the first magnetic layer, and a second magnetic layer that is formed on the tunnel barrier layer, a magnetization direction of the second magnetic layer being variable and being perpendicular to the film surface. The second magnetic layer comprises a body layer that constitutes an origin of perpendicular magnetic anisotropy, and an interface layer that is formed between the body layer and the tunnel barrier layer. The interface layer has a permeability higher than that of the body layer and a planar size larger than that of the body layer.
摘要翻译：根据一个实施例，磁阻元件包括其中磁化方向可变并且垂直于膜表面的第一磁性层，形成在第一磁性层上的隧道势垒层和形成的第二磁性层在隧道势垒层上，第二磁性层的磁化方向是可变的并垂直于膜表面。第二磁性层包括构成垂直磁各向异性的原点的主体层以及形成在主体层与隧道势垒层之间的界面层。界面层的透过率比体层高，平面尺寸比体层大。

3. 发明申请

US20100080050A1 MAGNETORESISTIVE EFFECT DEVICE AND MAGNETIC MEMORY 有权
标题翻译：磁感应效应器和磁记忆
公开(公告)号：US20100080050A1
公开(公告)日：2010-04-01
申请号：US12556883
申请日：2009-09-10
申请人： Jyunichi OZEKI , Naoharu SHIMOMURA , Sumio IKEGAWA , Tadashi KAI , Masahiko NAKAYAMA , Hisanori AIKAWA , Tatsuya KISHI , Hiroaki YODA , Eiji KITAGAWA , Masatoshi YOSHIKAWA
发明人： Jyunichi OZEKI , Naoharu SHIMOMURA , Sumio IKEGAWA , Tadashi KAI , Masahiko NAKAYAMA , Hisanori AIKAWA , Tatsuya KISHI , Hiroaki YODA , Eiji KITAGAWA , Masatoshi YOSHIKAWA
IPC分类号： G11C11/00 , H01L29/82 , G11C11/14
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , G11C11/5607 , H01F10/123 , H01F10/3254 , H01F10/3277 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： A magnetic memory includes a magnetoresistive effect device comprising: a first ferromagnetic layer that has magnetic anisotropy in a direction perpendicular to a film plane thereof; a first nonmagnetic layer that is provided on the first ferromagnetic layer; a first reference layer that is provided on the first nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, has magnetization antiparallel to a magnetization direction of the first ferromagnetic layer, and has a film thickness that is 1/5.2 to 1/1.5 times as large as a film thickness of the first ferromagnetic layer in the direction perpendicular to the film plane; a second nonmagnetic layer that is provided on the first reference layer; and a storage layer that is provided on the second nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, and has a magnetization direction varied by spin-polarized electrons caused by flowing the current to the magnetoresistive effect device.
摘要翻译：磁存储器包括磁阻效应器件，包括：在垂直于其膜平面的方向上具有磁各向异性的第一铁磁层; 设置在第一铁磁层上的第一非磁性层; 设置在第一非磁性层上的第一参考层在垂直于其膜平面的方向上具有磁各向异性，具有与第一铁磁层的磁化方向反平行的磁化，并且具有1 / 5.2〜在第一铁磁层的垂直于膜平面的方向上的膜厚度的1/15倍; 设置在第一参考层上的第二非磁性层; 并且设置在第二非磁性层上的存储层在垂直于其膜平面的方向上具有磁各向异性，并且由于使电流流向磁阻效应器而引起的由自旋极化电子变化的磁化方向。

4. 发明申请

US20150260804A1 TESTER FOR TESTING MAGNETIC MEMORY 有权
标题翻译：测试磁性记忆测试仪
公开(公告)号：US20150260804A1
公开(公告)日：2015-09-17
申请号：US14478925
申请日：2014-09-05
申请人： Tatsuya KISHI , Sumio IKEGAWA
发明人： Tatsuya KISHI , Sumio IKEGAWA
IPC分类号： G01R33/12 , G11C29/08 , G11C11/16
CPC分类号： G01R33/1207 , G11C11/16 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C29/56016 , G11C2029/5002 , G11C2029/5602
摘要： According to one embodiment, a tester includes a magnetic shield portion having a space which is shielded from an external magnetic field, a controller generating a test signal for testing a magnetic memory having a magnetoresistive element provided in the space, an interface portion in the space, the interface portion which functions as an interface between the controller and the magnetic memory, and a magnetic field generating portion in the space, the magnetic field generating portion generating a test magnetic field while the magnetic memory is tested by the test signal.
摘要翻译：根据一个实施例，测试仪包括具有屏蔽外部磁场的空间的磁屏蔽部分，产生用于测试设置在该空间中的具有磁阻元件的磁存储器的测试信号的控制器，该空间中的接口部分，用作控制器和磁存储器之间的接口的接口部分和该空间中的磁场产生部分，在通过测试信号测试磁存储器的同时产生测试磁场的磁场产生部分。

5. 发明申请

US20150263264A1 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20150263264A1
公开(公告)日：2015-09-17
申请号：US14479163
申请日：2014-09-05
申请人： Keiji HOSOTANI , Sumio IKEGAWA , Tatsuya KISHI
发明人： Keiji HOSOTANI , Sumio IKEGAWA , Tatsuya KISHI
IPC分类号： H01L43/02 , H01L43/12 , H01L27/22 , H01L43/08
CPC分类号： H01L43/02 , H01L27/222 , H01L27/228 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a semiconductor memory device comprises a memory cell array. The memory cell array has a plurality of magnetic tunnel junction (MTJ) elements. Each of the MTJ elements has a first magnetic layer, a second magnetic layer and a non-magnetic layer therebetween, and a hard mask layer is arranged above the second magnetic layer. The plurality of MTJ elements have a first MTJ element having a first hard mask layer and a second MTJ element having a second hard mask layer, and a dimension of, the first hard mask layer is greater than that of the second hard mask layer.
摘要翻译：根据一个实施例，半导体存储器件包括存储单元阵列。存储单元阵列具有多个磁性隧道结（MTJ）元件。 MTJ元件中的每一个都具有第一磁性层，第二磁性层和非磁性层，硬掩模层设置在第二磁性层的上方。多个MTJ元件具有具有第一硬掩模层的第一MTJ元件和具有第二硬掩模层的第二MTJ元件，第一硬掩模层的尺寸大于第二硬掩模层的尺寸。

6. 发明申请

US20090244792A1 MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：US20090244792A1
公开(公告)日：2009-10-01
申请号：US12396778
申请日：2009-03-03
申请人： Masahiko NAKAYAMA , Tadashi KAI , Sumio IKEGAWA , Hiroaki YODA , Tatsuya KISHI
发明人： Masahiko NAKAYAMA , Tadashi KAI , Sumio IKEGAWA , Hiroaki YODA , Tatsuya KISHI
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , H01L27/226
摘要： A magnetoresistance effect element includes: a first ferromagnetic layer having invariable magnetization perpendicular to a film plane; a second ferromagnetic layer having variable magnetization perpendicular to the film plane; a first nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer provided on an opposite side of the second ferromagnetic layer from the first nonmagnetic layer, and having variable magnetization parallel to the film plane; and a second nonmagnetic layer interposed between the second and third ferromagnetic layers. Spin-polarized electrons are injected into the second ferromagnetic layer by flowing a current in the direction perpendicular to the film planes between the first and third ferromagnetic layers, precession movement is induced in the magnetization of the third ferromagnetic layer by injecting the spin-polarized electrons, and a microwave magnetic field of a frequency corresponding to the precession movement is applied to the second ferromagnetic layer.
摘要翻译：磁阻效应元件包括：具有垂直于膜平面的不变磁化的第一铁磁层; 具有垂直于膜平面的可变磁化的第二铁磁层; 介于所述第一铁磁层和所述第二铁磁层之间的第一非磁性层; 第三铁磁层，其设置在所述第二铁磁层的与所述第一非磁性层相反的一侧上，并且具有与所述膜平面平行的可变磁化强度; 以及插入在第二和第三铁磁层之间的第二非磁性层。通过在垂直于第一和第三铁磁层之间的膜平面的方向上流动电流，将旋转极化电子注入到第二铁磁层中，通过注入自旋极化电子在第三铁磁层的磁化中引起进动运动并且将对应于进动运动的频率的微波磁场施加到第二铁磁层。

7. 发明申请

US20150069551A1 MAGNETORESISTIVE ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：磁性元件及其制造方法
公开(公告)号：US20150069551A1
公开(公告)日：2015-03-12
申请号：US14200742
申请日：2014-03-07
申请人： Masaru TOKO , Masahiko NAKAYAMA , Kuniaki SUGIURA , Yutaka HASHIMOTO , Tadashi KAI , Akiyuki MURAYAMA , Tatsuya KISHI
发明人： Masaru TOKO , Masahiko NAKAYAMA , Kuniaki SUGIURA , Yutaka HASHIMOTO , Tadashi KAI , Akiyuki MURAYAMA , Tatsuya KISHI
IPC分类号： H01L43/02 , H01L43/12
CPC分类号： H01L43/12 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer. The reference layer includes a first region, and a second region provided outside the first region to surround the same. The second region contains an element contained in the first region and another element being different from the element. The magnetoresistive element further includes a storage layer, and a tunnel barrier layer provided between the reference layer and the storage layer. The storage layer is free from the another element.
摘要翻译：根据一个实施例，公开了一种磁阻元件。磁阻元件包括参考层。参考层包括第一区域和设置在第一区域外部以包围该第一区域的第二区域。第二区域包含包含在第一区域中的元素，而另一元素与元素不同。磁阻元件还包括存储层，以及设置在参考层和存储层之间的隧道势垒层。存储层没有另一个元素。

8. 发明申请

US20130069186A1 MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：磁性元件及其制造方法
公开(公告)号：US20130069186A1
公开(公告)日：2013-03-21
申请号：US13618780
申请日：2012-09-14
申请人： Masaru TOKO , Masahiko NAKAYAMA , Akihiro NITAYAMA , Tatsuya KISHI , Hisanori AIKAWA , Hiroaki YODA
发明人： Masaru TOKO , Masahiko NAKAYAMA , Akihiro NITAYAMA , Tatsuya KISHI , Hisanori AIKAWA , Hiroaki YODA
IPC分类号： H01L27/22 , H01L21/8239
CPC分类号： H01L43/08 , H01L27/228 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetoresistive element comprises a first magnetic layer having a magnetization direction invariable and perpendicular to a film surface, a tunnel barrier layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel barrier layer and having a magnetization direction variable and perpendicular to the film surface. The first magnetic layer includes an interface layer formed on an upper side in contact with a lower portion of the tunnel barrier layer, and a main body layer formed on a lower side and serving as an origin of perpendicular magnetic anisotropy. The interface layer includes a first area provided on an inner side and having magnetization, and a second area provided on an outer side to surround the first area and having magnetization smaller than the magnetization of the first area or no magnetization.
摘要翻译：根据一个实施例，磁阻元件包括具有不变且垂直于膜表面的磁化方向的第一磁性层，形成在第一磁性层上的隧道势垒层，以及形成在隧道势垒层上的第二磁性层，并且具有磁化方向可变并垂直于膜表面。第一磁性层包括形成在与隧道势垒层的下部相接触的上侧的界面层，以及形成在下侧并用作垂直磁各向异性的原点的主体层。界面层包括设置在内侧并具有磁化的第一区域和设置在外侧以围绕第一区域并且具有小于第一区域的磁化或不具有磁化的磁化的第二区域。

9. 发明申请

US20160055951A1 ELECTROMAGNET, TESTER AND METHOD OF MANUFACTURING MAGNETIC MEMORY 有权
标题翻译：电磁铁，测试仪及制造磁记忆的方法
公开(公告)号：US20160055951A1
公开(公告)日：2016-02-25
申请号：US14593646
申请日：2015-01-09
申请人： Tatsuya KISHI
发明人： Tatsuya KISHI
IPC分类号： H01F7/20 , G11C29/08 , G11C29/56 , H01L43/08 , H01L43/12 , H01L27/22 , H01L43/02 , H01F5/00 , G11C11/16
CPC分类号： H01F7/20 , G11C11/16 , G11C29/50 , G11C29/50016 , G11C29/56 , G11C29/56016 , G11C2029/5002
摘要： According to one embodiment, an electromagnet includes a first electromagnet coil having a first portion and a second portion. The first portion of the first electromagnet coil extends in a direction in parallel with a first plane. The second portion of the first electromagnet coil extends in a direction in parallel with a second plane. The first and second planes intersect at a predetermined angle.
摘要翻译：根据一个实施例，电磁体包括具有第一部分和第二部分的第一电磁线圈。第一电磁线圈的第一部分沿与第一平面平行的方向延伸。第一电磁线圈的第二部分沿与第二平面平行的方向延伸。第一和第二平面以预定角度相交。

10. 发明申请

US20100290270A1 MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY HAVING SAID MAGNETIC MEMORY ELEMENT, AND METHOD FOR DRIVING MAGNETIC MEMORY 有权
标题翻译：磁记忆元件，具有磁性记忆元件的磁记忆，以及用于驱动磁记忆的方法
公开(公告)号：US20100290270A1
公开(公告)日：2010-11-18
申请号：US12844144
申请日：2010-07-27
申请人： Eiji KITAGAWA , Masatoshi YOSHIKAWA , Tatsuya KISHI , Hiroaki YODA
发明人： Eiji KITAGAWA , Masatoshi YOSHIKAWA , Tatsuya KISHI , Hiroaki YODA
IPC分类号： G11C11/00
CPC分类号： G11C11/1693 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： An inadvertent write can be prevented when a read is performed. The duration of the write current pulse for writing information in the magnetic memory layer is longer than the duration of the read current pulse for reading the information from the magnetic memory layer.
摘要翻译：当执行读取时，可以防止无意写入。用于在磁存储层中写入信息的写入电流脉冲的持续时间长于用于从磁存储层读取信息的读取电流脉冲的持续时间。

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