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1. 发明授权

US06454819B1 Composite particles and production process thereof, aqueous dispersion, aqueous dispersion composition for chemical mechanical polishing, and process for manufacture of semiconductor device 有权
标题翻译：复合粒子及其制造方法，水分散体，化学机械抛光用水性分散体组合物，半导体装置的制造方法
公开(公告)号：US06454819B1
公开(公告)日：2002-09-24
申请号：US09484064
申请日：2000-01-18
申请人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Katsuya Okumura , Masayuki Motonari , Masayuki Hattori , Akira Iio
发明人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Katsuya Okumura , Masayuki Motonari , Masayuki Hattori , Akira Iio
IPC分类号： C09K314
CPC分类号： C09K3/1463 , C08G83/001 , C08J3/128 , C08K3/36 , C08K5/057 , C08K2201/013 , C09G1/02 , C09K3/1436 , H01L21/02024 , H01L21/31053 , H01L21/3212
摘要： A process for chemical mechanical polishing of a working film on a wafer, which entails conducting the chemical mechanical polishing with an aqueous dispersion containing water and composite particles, the composite particles containing polymer particles having at least one of a silicon compound portion or section and a metal compound portion or section formed directly or indirectly on the polymer particles.
摘要翻译：一种用于化学机械抛光晶片上的工作薄膜的方法，该方法需要用含水和复合颗粒的水性分散体进行化学机械抛光，所述复合颗粒含有具有硅化合物部分或部分和在聚合物颗粒上直接或间接形成的金属化合物部分或部分。

2. 发明授权

US06375545B1 Chemical mechanical method of polishing wafer surfaces 有权
标题翻译：抛光晶圆表面的化学机械方法
公开(公告)号：US06375545B1
公开(公告)日：2002-04-23
申请号：US09484252
申请日：2000-01-18
申请人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Nobuo Hayasaka , Katsuya Okumura , Akira Iio , Masayuki Hattori , Masayuki Motonari
发明人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Nobuo Hayasaka , Katsuya Okumura , Akira Iio , Masayuki Hattori , Masayuki Motonari
IPC分类号： B24B100
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , H01L21/31053 , Y10S977/775 , Y10S977/888
摘要： It is an object of the present invention to provide an aqueous dispersion and CMP slurry that can achieve polishing at an adequate rate without producing scratches in the polishing surfaces of wafer working films, and a polishing process for wafer surfaces and a process for manufacture of a semiconductor device using them. A CMP slurry and the like of the present invention contains polymer particles with a crosslinked structure and a mean particle size of 0.13-0.8 &mgr;m. The CMP slurry may contain no surfactant, and may contain the surfactant of not greater than 0.15 wt %. A CMP slurry and the like of another present invention contains polymer particles and inorganic particles of silica, aluminum and the like. A mean particle size of the polymer particles may be not greater than a mean particle size of the inorganic particles. And the mean particle size of the inorganic coagulated particles may be 0.1-1.0 &mgr;m, and may be smaller than the mean particle size of the polymer particles. The CMP slurry is used as a polishing agent and a working film of a silicon oxide film, an aluminum film, a tungsten film or a copper film formed on a wafer is polished. And a semiconductor device is manufactured by using the CMP slurry.
摘要翻译：本发明的目的是提供一种水分散体和CMP浆料，其可以以足够的速率实现抛光，而不会在晶片工作薄膜的抛光表面中产生划痕，以及用于晶片表面的抛光工艺和制造半导体器件使用它们。本发明的CMP浆料等含有交联结构，平均粒径为0.13〜0.8μm的聚合物粒子。 CMP浆料可以不含表面活性剂，并且可以含有不大于0.15重量％的表面活性剂。另一个本发明的CMP浆料等含有聚合物颗粒和二氧化硅，铝等的无机颗粒。聚合物颗粒的平均粒径可以不大于无机颗粒的平均粒度。无机凝结粒子的平均粒径可以为0.1〜1.0μm，并且可以小于聚合物粒子的平均粒径。将CMP浆料用作抛光剂，并且研磨在晶片上形成的氧化硅膜，铝膜，钨膜或铜膜的工作膜。并且通过使用CMP浆料制造半导体器件。

3. 发明授权

US06740590B1 AQUEOUS DISPERSION, AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING USED FOR MANUFACTURE OF SEMICONDUCTOR DEVICES, METHOD FOR MANUFACTURE OF SEMICONDUCTOR DEVICES, AND METHOD FOR FORMATION OF EMBEDDED WRITING 有权
标题翻译：用于制造半导体器件的化学机械抛光的水性分散体，用于制造半导体器件的方法和用于形成嵌入式布线的方法
公开(公告)号：US06740590B1
公开(公告)日：2004-05-25
申请号：US09531163
申请日：2000-03-17
申请人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Katsuya Okumura , Akira Iio , Masayuki Hattori
发明人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Katsuya Okumura , Akira Iio , Masayuki Hattori
IPC分类号： H01L21302
CPC分类号： C09K3/1463 , C09G1/02 , C09K3/1436 , H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： The object of the present invention is to provide an aqueous dispersion that can give the required properties for a wide range of uses including electronic materials, magnetic materials, optical materials and polishing materials, and to provide an aqueous dispersion for chemical mechanical polishing (CMP slurry) that gives an adequate polishing rate without creating scratches in polishing surfaces. Another object of the present invention is, to provide a method for manufacture of semiconductor devices using a CMP slurry that can control progressive erosion due to scratches and the like during polishing and that can achieve efficient flattening of working films, and to provide a method for formation of embedded wiring. The aqueous dispersion or CMP slurry of the present invention contains polymer particles made of thermoplastic resins or the like, and inorganic particles made of alumina, silica or the like, wherein the zeta potentials of the polymer particles and inorganic particles are of opposite signs, and they are bonded by electrostatic force to form aggregates as composite particles. The aggregates are subjected to ultrasonic wave irradiation or shear stress with a homogenizer to give more uniformly dispersed composite particles.
摘要翻译：本发明的目的是提供一种水性分散体，其可以为包括电子材料，磁性材料，光学材料和抛光材料在内的广泛用途提供所需的性能，并提供用于化学机械抛光的水性分散体（CMP浆料），其提供足够的抛光速率，而不会在抛光表面中产生划痕。本发明的另一个目的是提供一种使用CMP浆料制造半导体器件的方法，所述CMP浆料可以在抛光期间控制由划痕等引起的逐渐侵蚀，并且可以实现工作膜的有效平坦化，并提供一种方法形成嵌入式布线。本发明的水性分散体或CMP浆料含有由热塑性树脂等构成的聚合物颗粒和由氧化铝，二氧化硅等制成的无机颗粒，其中聚合物颗粒和无机颗粒的ζ电位具有相反的标志，它们通过静电力结合以形成作为复合颗粒的聚集体。聚集体用均化器进行超声波照射或剪切应力，得到更均匀分散的复合颗粒。

4. 发明授权

US06935928B2 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method 有权
标题翻译：化学机械抛光水性分散体和化学机械抛光方法
公开(公告)号：US06935928B2
公开(公告)日：2005-08-30
申请号：US10882362
申请日：2004-07-02
申请人： Kazuhito Uchikura , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi , Hiroyuki Yano , Yukiteru Matsui , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima
发明人： Kazuhito Uchikura , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi , Hiroyuki Yano , Yukiteru Matsui , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima
IPC分类号： C09G1/02 , C09K3/14 , H01L21/02 , H01L21/321 , H01L21/302 , H01L21/461
CPC分类号： H01L21/02074 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A chemical mechanical polishing aqueous dispersion comprises a component (A) composed of abrasive grains, a component (B) composed of at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, a component (C) composed of an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid and a component (D) composed of an oxidizing agent, wherein a mass ratio (WB/WC) of the content (WB) of the component (B) to the content (WC) of the component (C) is not less than 0.01 and less than 2, and the concentration of an ammonia component composed of ammonia and ammonium ion is not more than 0.005 mol/litter. According to the chemical mechanical polishing aqueous dispersion, various layers to be processed can be polished with high efficiency, and a sufficiently planarized polished surface of high precision can be obtained.
摘要翻译：化学机械研磨用水系分散体包含由磨粒构成的成分（A），由喹啉羧酸和吡啶羧酸中的至少一种构成的成分（B），由喹啉羧酸以外的有机酸构成的成分（C），吡啶羧酸酸和由氧化剂组成的组分（D），其中组分（B）的含量（WB）与组分（C）的含量（WC）的质量比（WB / WC）不小于 0.01和小于2，由氨和铵离子组成的氨组分的浓度不大于0.005mol / l。根据化学机械研磨水分散体，能够高效率地研磨各种被处理层，能够得到高精度的平坦化的抛光面。

5. 发明申请

US20050037693A1 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method 有权
公开(公告)号：US20050037693A1
公开(公告)日：2005-02-17
申请号：US10882362
申请日：2004-07-02
申请人： Kazuhito Uchikura , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi , Hiroyuki Yano , Yukiteru Matsui , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima
发明人： Kazuhito Uchikura , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi , Hiroyuki Yano , Yukiteru Matsui , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima
IPC分类号： C09G1/02 , C09K3/14 , H01L21/02 , H01L21/321 , B24B1/00
CPC分类号： H01L21/02074 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A chemical mechanical polishing aqueous dispersion comprises a component (A) composed of abrasive grains, a component (B) composed of at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, a component (C) composed of an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid and a component (D) composed of an oxidizing agent, wherein a mass ratio (WB/WC) of the content (WB) of the component (B) to the content (WC) of the component (C) is not less than 0.01 and less than 2, and the concentration of an ammonia component composed of ammonia and ammonium ion is not more than 0.005 mol/litter. According to the chemical mechanical polishing aqueous dispersion, various layers to be processed can be polished with high efficiency, and a sufficiently planarized polished surface of high precision can be obtained.

6. 发明授权

US06409780B1 Water-laden solid matter of vapor-phase processed inorganic oxide particles and slurry for polishing and manufacturing method of semiconductor devices 有权
标题翻译：气相处理无机氧化物颗粒的含水固体物质和用于半导体器件的抛光和制造方法的浆料
公开(公告)号：US06409780B1
公开(公告)日：2002-06-25
申请号：US09482937
申请日：2000-01-14
申请人： Hiroyuki Yano , Nobuo Hayasaka , Katsuya Okumura , Akira Iio , Masayuki Hattori , Kiyonobu Kubota
发明人： Hiroyuki Yano , Nobuo Hayasaka , Katsuya Okumura , Akira Iio , Masayuki Hattori , Kiyonobu Kubota
IPC分类号： C09K314
CPC分类号： C09G1/02 , C09K3/1463
摘要： Water-laden solid matter is provided which is obtained by adding 40 to 300 weight parts of water to 100 weight parts of inorganic oxide particles synthesized by fumed process or metal evaporation oxidation process, slurry for polishing is provided which is manufactured by using the water-laden solid matter, and a method for manufacturing a semiconductor device using the above slurry. Said water-laden solid matter is within a range of 0.3 to 3 g/cm3 in bulk density and within a range of 0.5 to 100 mm&phgr; in average particle size when manufactured granular. Said slurry for polishing is manufactured from the water-laden solid matter, and the average particle size thereof after being dispersed in water is within a range of 0.05 to 1.0 &mgr;m.
摘要翻译：提供含水固体物质，其通过向通过热解法或金属蒸发氧化法合成的100重量份的无机氧化物颗粒中加入40至300重量份的水而获得，提供了通过使用水 - 负载固体物质，以及使用上述浆料制造半导体器件的方法。所述含水固体物质的体积密度为0.3〜3g / cm 3，制粒时的平均粒径为0.5〜100mmφ的范围。用于抛光的所述浆料由含水固体物质制成，其在分散在水中的平均粒径在0.05-1.0μm的范围内。

7. 发明授权

US07833431B2 Aqueous dispersion for CMP, polishing method and method for manufacturing semiconductor device 失效
标题翻译：用于CMP的水分散体，用于制造半导体器件的抛光方法和方法
公开(公告)号：US07833431B2
公开(公告)日：2010-11-16
申请号：US11561071
申请日：2006-11-17
申请人： Gaku Minamihaba , Nobuyuki Kurashima , Dai Fukushima , Yukiteru Matsui , Susumu Yamamoto , Hiroyuki Yano
发明人： Gaku Minamihaba , Nobuyuki Kurashima , Dai Fukushima , Yukiteru Matsui , Susumu Yamamoto , Hiroyuki Yano
IPC分类号： B44C1/22 , H01L21/302 , C09K13/00 , C03C15/00
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31058 , H01L21/31144 , H01L21/7684
摘要： An aqueous dispersion for chemical mechanical polishing is provided, which includes water and a resin particle. The resin particles accompany with a projection having a curvature radius ranging from 10 nm to 1.65 μm on a surface. The maximum length of the resin particles is not more than 5 μm and is 2.5 to 25 times as large as the curvature radius.
摘要翻译：提供了用于化学机械抛光的水分散体，其包括水和树脂颗粒。树脂颗粒在表面附近具有范围为10nm至1.65μm的曲率半径的突起。树脂粒子的最大长度为5μm以下，为曲率半径的2.5〜25倍。

8. 发明授权

US07402521B2 Method for chemically mechanically polishing organic film, method of manufacturing semiconductor device, and program therefor 有权
标题翻译：化学机械抛光有机膜的方法，制造半导体器件的方法及其程序
公开(公告)号：US07402521B2
公开(公告)日：2008-07-22
申请号：US11418070
申请日：2006-05-05
申请人： Yukiteru Matsui , Gaku Minamihaba , Atsushi Shigeta , Hiroyuki Yano
发明人： Yukiteru Matsui , Gaku Minamihaba , Atsushi Shigeta , Hiroyuki Yano
IPC分类号： H01L21/302
CPC分类号： H01L21/31058 , B24B37/044 , C09G1/00 , C09G1/02 , H01L27/10867
摘要： There is proposed a polishing method. The method includes feeding a slurry onto a polishing pad, press-contacting a semiconductor substrate held on a polishing head with the polishing pad, the semiconductor substrate having an organic film thereon, and chemically mechanically polishing the organic film by repeating a sequence of rotation and halt of rotation of the polishing pad and the polishing head.
摘要翻译：提出了抛光方法。该方法包括将浆料进料到抛光垫上，将保持在抛光头上的半导体衬底与抛光垫压接，半导体衬底上具有有机膜，并通过重复旋转顺序化学机械抛光有机膜，停止抛光垫和抛光头的旋转。

9. 发明申请

US20070128873A1 AQUEOUS DISPERSION FOR CMP, POLISHING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：用于CMP，抛光方法和制造半导体器件的方法的水性分散体
公开(公告)号：US20070128873A1
公开(公告)日：2007-06-07
申请号：US11561071
申请日：2006-11-17
申请人： Gaku MINAMIHABA , Nobuyuki Kurashima , Dai Fukushima , Yukiteru Matsui , Susumu Yamamoto , Hiroyuki Yano
发明人： Gaku MINAMIHABA , Nobuyuki Kurashima , Dai Fukushima , Yukiteru Matsui , Susumu Yamamoto , Hiroyuki Yano
IPC分类号： C09K13/00 , H01L21/461 , C03C15/00 , H01L21/302 , B44C1/22
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31058 , H01L21/31144 , H01L21/7684
摘要： An aqueous dispersion for chemical mechanical polishing is provided, which includes water and a resin particle. The resin particles accompany with a projection having a curvature radius ranging from 10 nm to 1.65 μm on a surface. The maximum length of the resin particles is not more than 5 μm and is 2.5 to 25 times as large as the curvature radius.
摘要翻译：提供了用于化学机械抛光的水分散体，其包括水和树脂颗粒。树脂颗粒伴随着表面上具有10nm至1.65μm的曲率半径的突起。树脂粒子的最大长度为5μm以下，为曲率半径的2.5〜25倍。

10. 发明授权

US07060621B2 Slurry for CMP, polishing method and method of manufacturing semiconductor device 有权
标题翻译：用于CMP的浆料，抛光方法和制造半导体器件的方法
公开(公告)号：US07060621B2
公开(公告)日：2006-06-13
申请号：US10838261
申请日：2004-05-05
申请人： Gaku Minamihaba , Yukiteru Matsui , Hiroyuki Yano
发明人： Gaku Minamihaba , Yukiteru Matsui , Hiroyuki Yano
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02
摘要： Disclosed is a CMP slurry comprising a first colloidal particle having a primary particle diameter ranging from 5 nm to 30 nm and an average particle diameter of d1, the first colloidal particle being incorporated in an amount of w1 by weight and a second colloidal particle having a primary particle diameter larger than that of the first colloidal particle and an average particle diameter of d2, the second colloidal particle being formed of the same material as that of the first colloidal particle and incorporated in an amount of w2 by weight, wherein d1, d2, w1 and w2 are selected to concurrently meet following conditions (A) and (B) excluding situations where d1, d2, w1 and w2 concurrently meet following conditions (C) and (D): 3≦d2/d1≦8 (A) 0.7≦w1/(w1+w2)≦0.97 (B) 3≦d2/d1≦5 (C) 0.7≦w1/(w1+w2)≦0.9. (D)
摘要翻译：公开了一种CMP浆料，其包含一次粒径为5nm〜30nm，平均粒径为d 1的第一胶体粒子，第一胶体粒子的重量为w 1，第二胶体粒子其第一粒径大于第一胶体粒子的一次粒径，平均粒径为d 2，第二胶体粒子由与第一胶体粒子相同的材料形成，w 2的重量比，其中d 1，d 2，w 1和w 2同时满足以下条件（A）和（B），不包括d 1，d 2，w 1和w 2同时满足以下条件（C）和（D ）：<？in-line-formula description =“In-line Formulas”end =“lead”？> 3 <= d2 / d1 <= 8（A）<？in-line-formula description =“ “end =”tail“？> <？in-line-formula description =”In-line Formulas“end =”lead“？> 0.7 <= w1 /（w1 + w2）<= 0.97（B） line-formu lae description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 3 <= d2 / d1 <= 5（C） <？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line formula”end =“lead”？> 0.7 <= w1 /（ w1 + w2）<= 0.9。（D）<？in-line-formula description =“In-line Formulas”end =“tail”？>

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