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1. 发明授权

US5334864A Process for selective formation of II-VI group compound film 失效
标题翻译：选择性形成II-VI族化合物膜的方法
公开(公告)号：US5334864A
公开(公告)日：1994-08-02
申请号：US818530
申请日：1992-01-09
申请人： Hiroyuki Tokunaga , Takao Yonehara
发明人： Hiroyuki Tokunaga , Takao Yonehara
IPC分类号： H01L21/36 , H01L21/84 , H01L31/032 , H01L31/18 , H01L29/161 , H01L27/12
CPC分类号： H01L21/02557 , H01L21/0242 , H01L21/02422 , H01L21/02488 , H01L21/0256 , H01L21/02568 , H01L21/0262 , H01L21/02645 , H01L21/84 , H01L31/0322 , H01L31/1828 , H01L31/1832 , Y02E10/541 , Y02E10/543
摘要： A process for selective formation of a II-VI group compound film comprises applying a compound film forming treatment, in a gas phase including a starting material for supplying the group II atoms of periodic table and a starting material for supplying the group VI atoms of periodic table, on a substrate having a non-nucleation surface (S.sub.NDS) with small nucleation density and a nucleation surface (S.sub.NDL) with larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) and a large area sufficient for a number of nuclei to be formed and forming selectively a II-VI group compound film only on said nucleation surface (S.sub.NDL).
摘要翻译：用于选择性形成II-VI族化合物膜的方法包括在包括用于提供元素周期表的II族原子的起始材料和用于提供第VI族原子的周期表的原料的气相中进行化合物成膜处理在具有较小成核密度的非成核表面（SNDS）和具有比所述非成核表面（SNDS）的成核密度（NDS））更大的成核密度（NDL）的成核表面（SNDL）的基底上，大面积足以形成许多核，并且仅在所述成核表面（SNDL）上选择性地形成II-VI族化合物膜。

2. 发明授权

US5281283A Group III-V compound crystal article using selective epitaxial growth 失效
标题翻译：使用选择性外延生长的III-V族复合晶体制品
公开(公告)号：US5281283A
公开(公告)日：1994-01-25
申请号：US985751
申请日：1992-12-04
申请人： Hiroyuki Tokunaga , Takao Yonehara
发明人： Hiroyuki Tokunaga , Takao Yonehara
IPC分类号： C30B25/02 , C30B25/18 , H01L21/20
CPC分类号： C30B25/02 , C30B25/18 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L21/02645 , Y10S148/026
摘要： A III-V group compound crystal article comprises a substrate having a non-nucleation surface with smaller nucleation density (S.sub.NDS) and a nucleation surface (S.sub.NDL) which is arranged adjacent to said non-nucleation surface (S.sub.NDS), has a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) and is comprised of an amorphous material, and a III-V group compound monocrystal grown from said single nucleus on said substrate and spread on said non-nucleation surface (S.sub.NDS) beyond said nucleation surface (S.sub.NDL).
摘要翻译： III-V族化合物晶体制品包括具有较小成核密度（SNDS）的非成核表面和与所述非成核表面（SNDS）相邻布置的成核表面（SNDL）的基底具有足够小的面积使得晶体仅从所述非成核表面（SNDS）的单核和较大的成核密度（NDL）生长，并且由非晶材料和III-V族化合物单晶在所述基底上从所述单核生长并在所述非成核表面（SNDS）上超过所述成核表面（SNDL）扩散。

3. 发明授权

US5304820A Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same 失效
标题翻译：使用由其获得的化合物半导体的化合物半导体的制造方法和半导体装置
公开(公告)号：US5304820A
公开(公告)日：1994-04-19
申请号：US851238
申请日：1992-03-13
申请人： Hiroyuki Tokunaga , Kenji Yamagata , Takao Yonehara
发明人： Hiroyuki Tokunaga , Kenji Yamagata , Takao Yonehara
IPC分类号： C30B23/04 , C30B25/04 , H01L21/20 , H01L21/36 , H01L21/365 , H01L33/00
CPC分类号： C30B23/04 , C30B25/04 , H01L21/0242 , H01L21/02422 , H01L21/02538 , H01L21/02551 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A process for producing a compound semiconductor comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S.sub.NDS) with smaller nucleation density and a nucleation surface (S.sub.NDL) arranged adjacent thereto having a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said nonnucleation surface (S.sub.NDS), by exposing the substrate to either of the gas phases:(a) gas phase (a) containing a starting material (II) for feeding the group II atoms of the periodic table and a starting material (VI) for feeding the group VI atoms of the periodic table and(b) gas phase (b) containing a starting material (III) for feeding the group III atoms of the periodic table and a starting material (V) for feeding the group V atoms of the periodic table, thereby forming only a single nucleus on said nucleation surface (S.sub.NDL) and permitting a monocrystal of the compound semiconductor to grow from said single nucleus, characterized in thata semiconductor junction is formed in said monocrystal by feeding a starting material (Dn) for feeding a dopant for controlling to one electroconduction type and a starting material (Dp) for feeding a dopant for controlling to the electroconduction type opposite to said electroconduction type with change-over to one another into said gas phase, during said crystal forming treatment.
摘要翻译：一种制备化合物半导体的方法包括在具有较小成核密度的包含非成核表面（SNDS）的自由表面的衬底上施加晶体形成处理，并且与晶体相邻地布置具有足够小的面积的成核表面（SNDL）通过将底物暴露于任一气相，仅从单个核和较大的成核密度（NDL）生长而不是所述非成核表面（SNDS）的成核密度（NDS）;（a）含有用于供给周期表的第II族原子的原料（II）和用于进料周期表的第Ⅵ族原子的原料（Ⅵ）和（b）含有用于进料的起始原料（Ⅲ）的气相（b）周期表的第III族原子和用于进料周期表的V族原子的起始材料（V），从而在所述成核表面（SNDL）上仅形成单个核，并允许t的单晶其化合物半导体从所述单核生长，其特征在于，通过馈送用于供给用于控制一种导电型掺杂剂的原料（Dn）和用于供给掺杂剂的起始材料（Dp），在所述单晶中形成半导体结用于在所述晶体形成处理期间控制与所述电导型相反的导电类型，并且彼此转换成所述气相。

4. 发明授权

US5425808A Process for selective formation of III-IV group compound film 失效
标题翻译：选择性形成III-V族化合物膜的方法
公开(公告)号：US5425808A
公开(公告)日：1995-06-20
申请号：US143247
申请日：1993-10-29
申请人： Hiroyuki Tokunaga , Takao Yonehara
发明人： Hiroyuki Tokunaga , Takao Yonehara
IPC分类号： C30B25/18 , C30B29/40 , H01L21/20 , H01L21/205 , H01L21/84 , C30B25/04
CPC分类号： H01L21/02422 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/0262 , H01L21/02639 , Y10S117/913
摘要： A process for selective formation of a III-V group compound film comprises applying a compound film forming treatment, in a gas phase including a starting material for supplying the group III atoms of Periodic Table and a starting material for supplying the group V atoms of Periodic Table, on a substrate having a non-nucleation surface (S.sub.NDS) with small nucleation density and a nucleation surface (S.sub.NDL) with a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) and a large area sufficient for a number of nuclei to be formed, and forming selectively a III-V group compound film only on said nucleation surface (S.sub.NDL).
摘要翻译：选择性地形成III-V族化合物膜的方法包括在包括用于提供周期表的第III族原子的起始材料的气相中施加化合物成膜处理和用于提供周期表的第V族原子的起始材料表示在具有小成核密度的非成核表面（SNDS）和具有比所述非成核表面（SNDS）的成核密度（NDS））更大的成核密度（NDL）的成核表面（SNDL）的基材上，以及形成足够多的核的大面积，仅在所述成核面（SNDL）上选择性地形成III-V族化合物膜。

5. 发明授权

US5118365A II-IV group compound crystal article and process for producing same 失效
标题翻译： II-IV族化合物晶体及其制造方法
公开(公告)号：US5118365A
公开(公告)日：1992-06-02
申请号：US664432
申请日：1991-03-04
申请人： Hiroyuki Tokunaga , Takao Yonehara
发明人： Hiroyuki Tokunaga , Takao Yonehara
IPC分类号： C30B25/02 , C30B25/18 , H01L21/36 , H01L21/365
CPC分类号： C30B25/02 , C30B25/18 , C30B29/48 , H01L21/0242 , H01L21/02422 , H01L21/02551 , H01L21/02554 , H01L21/02557 , H01L21/0256 , H01L21/0262 , H01L21/02639 , H01L21/02647 , Y10S117/902 , Y10S117/913 , Y10S148/064
摘要： A II-VI group compound crystal article comprises a substrate having a non-nucleation surface with smaller nucleation density (S.sub.NDS) and a nucleation surface (S.sub.NDL) which is arranged adjacent to said non-nucleation surface (S.sub.NDS), has a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) and is comprised of an amorphous material, and a II-VI group compound monocrystal grown from said single nucleus on said substrate and spread on said non-nucleation surface (S.sub.NDS) beyond said nucleation surface (S.sub.NDL).

6. 发明授权

US5100691A Process for selective formation of II-VI group compound flim 失效
标题翻译：选择性形成II-VI族化合物的方法
公开(公告)号：US5100691A
公开(公告)日：1992-03-31
申请号：US686868
申请日：1991-04-16
申请人： Hiroyuki Tokunaga , Takao Yonehara
发明人： Hiroyuki Tokunaga , Takao Yonehara
IPC分类号： C30B25/18 , C30B29/48 , H01L21/36 , H01L21/365 , H01L21/84 , H01L31/032 , H01L31/18
CPC分类号： H01L21/84 , H01L21/0242 , H01L21/02422 , H01L21/02488 , H01L21/02557 , H01L21/0256 , H01L21/02568 , H01L21/0262 , H01L21/02639 , H01L31/0322 , H01L31/1828 , H01L31/1832 , Y02E10/541 , Y02E10/543
摘要： A process for selective formation of a II-VI group compound film comprises applying a compound film forming treatment, in a gas phase including a starting material for supplying the group II atoms of periodic table and a starting material for supplying the group VI atoms of periodic table, on a substrate having a non-nucleation surface (S.sub.NDS) with small nucleation density and a nucleation surface (S.sub.NDL) with larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) and a large area sufficient for a number of nuclei to be formed and forming selectively a II-VI group compound film only on said nucleation surface (S.sub.NDL).

7. 发明授权

US5010033A Process for producing compound semiconductor using an amorphous nucleation site 失效
标题翻译：使用无定形成核位点制造化合物半导体的方法
公开(公告)号：US5010033A
公开(公告)日：1991-04-23
申请号：US515351
申请日：1990-04-30
申请人： Hiroyuki Tokunaga , Kenji Yamagata , Takao Yonehara
发明人： Hiroyuki Tokunaga , Kenji Yamagata , Takao Yonehara
IPC分类号： C30B23/04 , C30B25/04 , H01L21/20 , H01L21/36 , H01L21/365
CPC分类号： C30B23/04 , C30B25/04 , H01L21/0242 , H01L21/02422 , H01L21/02538 , H01L21/02551 , H01L21/0256 , H01L21/02573 , H01L21/0262 , H01L21/02639 , H01L21/02647 , Y10S148/152 , Y10S438/925
摘要： A process for producing a compound semiconductor comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S.sub.NDS) with smaller nucleation density and a nucleation surface (S.sub.NDL) arranged adjacent thereto having a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said nonnucleation surface (S.sub.NDS), by exposing the substrate to either of the gas phases:(a) gas phase (a) containing a starting material (II) for feeding the group II atoms of the periodic table and a starting material (VI) for feeding the group VI atoms of the periodic table and(b) gas phase (b) containing a starting material (III) for feeding the group III atoms of the periodic table and a starting material (V) for feeding the group V atoms of the periodic table, thereby forming only a single nucleus on said nucleation surface (S.sub.NDL) and permitting a monocrystal of the compound semiconductor to grow from said single nucleus, characterized in thata semiconductor junction is formed in said monocrystal by feeding a starting material (Dn) for feeding a dopant for controlling to one electroconduction type and a starting material (Dp) for feeding a dopant for controlling to the electroconduction type opposite to said electrocondition type with change-over to one another into said gas phase, during said crystal forming treatment.

8. 发明授权

US09797858B2 Biosensor, measuring instrument for biosensor, and method of quantifying substrate 有权
公开(公告)号：US09797858B2
公开(公告)日：2017-10-24
申请号：US14166956
申请日：2014-01-29
申请人： Shoji Miyazaki , Hiroyuki Tokunaga , Yoshinobu Tokuno
发明人： Shoji Miyazaki , Hiroyuki Tokunaga , Yoshinobu Tokuno
IPC分类号： G01N27/327 , C12Q1/00 , G01N33/487 , G01N33/543 , A61B5/1486 , G01N27/26
CPC分类号： G01N27/327 , A61B5/1486 , A61B2562/0295 , C12Q1/001 , C12Q1/005 , C12Q1/006 , G01N27/26 , G01N27/3272 , G01N27/3274 , G01N33/48771 , G01N33/5438
摘要： A method of measuring a quantity of a substrate contained in sample liquid is provided. This method can reduce measurement errors caused by a biosensor. The biosensor includes at least a pair of electrodes on an insulating board and is inserted into a measuring device which includes a supporting section for supporting detachably the biosensor, plural connecting terminals to be coupled to the respective electrodes, and a driving power supply which applies a voltages to the respective electrodes via the connecting terminals. One of the electrodes of the biosensor is connected to the first and second connecting terminals of the measuring device only when the biosensor is inserted into the measuring device in a given direction and has a structure such that the electrode becomes conductive between the first and second connecting terminals due to a voltage application by the driving power supply.

9. 发明授权

US08945369B2 Biosensor measurement system and measurement method 有权
标题翻译：生物传感器测量系统和测量方法
公开(公告)号：US08945369B2
公开(公告)日：2015-02-03
申请号：US12375111
申请日：2007-07-26
申请人： Yoshihiro Itoh , Eriko Yamanishi , Tsuyoshi Takahashi , Hiroyuki Tokunaga
发明人： Yoshihiro Itoh , Eriko Yamanishi , Tsuyoshi Takahashi , Hiroyuki Tokunaga
IPC分类号： C12Q1/25 , G01N27/26 , G01N27/327
CPC分类号： G01N27/3274
摘要： There is provided a biosensor measurement system which can output a highly-precise measurement result even when an impact such as falling of the sensor occurs or the biosensor is an exposed sensor. An abnormal waveform detection electrode is provided in addition to electrodes for quantitative determination of a target substance. Therefore, when an impact is caused by such as falling of the sensor in a halt period where no voltage is applied in a voltage application algorithm, the abnormal waveform detection electrode can detect the impact. Further, also an exposed sensor can be detected by the abnormal waveform which is detected by the abnormal waveform detection electrode.
摘要翻译：提供了一种生物传感器测量系统，即使当传感器出现下降或生物传感器是暴露的传感器时也能输出高精度的测量结果。除了用于定量目标物质的电极之外，还提供异常波形检测电极。因此，在电压施加算法中，如果在不施加电压的停止期间传感器的下降引起冲击，则异常波形检测电极可以检测出影响。此外，也可以通过由异常波形检测电极检测到的异常波形来检测曝光的传感器。

10. 发明授权

US08668820B2 Method of measuring quantity of substrate 有权
标题翻译：测量基材数量的方法
公开(公告)号：US08668820B2
公开(公告)日：2014-03-11
申请号：US12802608
申请日：2010-06-10
申请人： Shoji Miyazaki , Hiroyuki Tokunaga , Yoshinobu Tokuno
发明人： Shoji Miyazaki , Hiroyuki Tokunaga , Yoshinobu Tokuno
IPC分类号： G01N27/327
CPC分类号： G01N27/327 , A61B5/1486 , A61B2562/0295 , C12Q1/001 , C12Q1/005 , C12Q1/006 , G01N27/26 , G01N27/3272 , G01N27/3274 , G01N33/48771 , G01N33/5438
摘要： A method of measuring a quantity of a substrate contained in sample liquid is provided. This method can reduce measurement errors caused by a biosensor. The biosensor includes at least a pair of electrodes on an insulating board and is inserted into a measuring device which includes a supporting section for supporting detachably the biosensor, plural connecting terminals to be coupled to the respective electrodes, and a driving power supply which applies a voltage to the respective electrodes via the connecting terminals. One of the electrodes of the biosensor is connected to the first and second connecting terminals of the measuring device only when the biosensor is inserted into the measuring device in a given direction, and has a structure such that the electrode becomes conductive between the first and second connecting terminals due to a voltage application by the driving power supply.
摘要翻译：提供了测量样品液体中所含的基板的量的方法。该方法可以减少由生物传感器引起的测量误差。生物传感器至少包括绝缘板上的一对电极，插入到测量装置中，该测量装置包括用于可拆卸地支撑生物传感器的支撑部分，要耦合到各个电极的多个连接端子和施加一个电极的驱动电源通过连接端子对各个电极施加电压。只有当生物传感器沿给定的方向插入到测量装置中时，生物传感器的电极中的一个连接到测量装置的第一和第二连接端子，并且具有这样的结构，使得电极在第一和第二由驱动电源施加电压引起的连接端子。

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