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    • 5. 发明授权
    • Oxygen atom containing film for a thin-film electroluminescent element
    • 用于薄膜电致发光元件的含氧原子的膜
    • US4188565A
    • 1980-02-12
    • US884475
    • 1978-03-08
    • Etsuo MizukamiHiroshi KishishitaMasashi KawaguchiYoshihiro EndoKinichi Isaka
    • Etsuo MizukamiHiroshi KishishitaMasashi KawaguchiYoshihiro EndoKinichi Isaka
    • H05B33/22H05B33/02
    • H05B33/22
    • At least one silicon-oxynitride film is deposited on an electroluminescence layer for providing a uniform and stable dielectric layer for an electroluminescence display panel. The silicon-oxynitride film is deposited using a sputtering technique by mixing a small amount (1 mol%) of nitrous oxide (N.sub.2 O) gas into a sputtering gas such as nitrogen (N.sub.2) gas. Oxygen (O.sub.2) gas may be substituted for the N.sub.2 O gas mingled within the sputtering gas in the amount of five mol%. A target for sputtering is a pure silicon or sintered Si.sub.3 N.sub.4 plate. An R.F. discharge is provided so that the power flux density on the target becomes several to several ten W. The silicon-oxynitride film is derived by means of the reaction between ion sputtering and the sputtering gas. A dielectric layer is further provided for establishing high reliabiltiy high dielectric properties of the electroluminescence display panel, the dielectric layer being disposed together with the silicon-oxynitride film and being one of the group consisting of Al.sub.2 O.sub.3, SiO.sub.2, Ta.sub.2 O.sub.5, Si.sub.3 N.sub.4 and Y.sub.2 O.sub.3. The silicon-oxynitride flm which is injected by suitable ions such as P.sup.+, H.sup.+, He.sup.+, Ne.sup.+, or Ar.sup.+ may be further provided as the dielectric layer.
    • 在电致发光层上沉积至少一个氧氮化硅膜,为电致发光显示面板提供均匀稳定的电介质层。 通过将少量(1mol%)的一氧化二氮(N 2 O)气体混合到诸如氮气(N 2)的溅射气体中,使用溅射技术沉积氮氧化硅膜。 氧(O 2)气体可以以5mol%的量代替溅射气体内混合的N2O气体。 溅射靶是纯硅或烧结Si3N4板。 一个R.F. 提供放电,使得靶上的功率通量密度达到数十至几十W.通过离子溅射和溅射气体之间的反应导出氧氮化硅膜。 还提供了一种用于建立电致发光显示面板的高可靠性高介电特性的电介质层,该电介质层与氧氮化硅膜一起设置,并且是由Al 2 O 3,SiO 2,Ta 2 O 5,Si 3 N 4和Y 2 O 3组成的组之一。 可以进一步提供由适当的离子如P +,H +,He +,Ne +或Ar +注入的氧氮化硅flm作为电介质层。