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1. 发明授权

US4443886A Charge transfer device imager with bias charge 失效
标题翻译：具有偏置电荷的电荷转移装置成像器
公开(公告)号：US4443886A
公开(公告)日：1984-04-17
申请号：US318436
申请日：1981-11-05
申请人： Hiroyuki Matsumoto , Motoaki Abe , Tetsuo Ando
发明人： Hiroyuki Matsumoto , Motoaki Abe , Tetsuo Ando
IPC分类号： H01L21/339 , H01L27/148 , H01L29/762 , H01L31/10 , H04N5/335 , H04N5/341 , H04N5/365 , H04N5/3725 , G11C19/28 , H01L29/78
CPC分类号： H04N3/1568 , H01L27/148
摘要： In a charge transfer device in which a plurality of electrodes are located on an insulating layer formed on a semiconductor substrate and an input portion and a transfer portion are provided, a predetermined amount of charge determined by a potential applied to the input portion is introduced into the portion beneath a predetermined electrode while driving an electrode on the transfer portion, such a potential is applied to all of the plurality of electrodes that surface areas of the substrate beneath the electrodes each become an accumulation state to thereby inject the predetermined amount of charge into the substrate, and a potential is applied to the electrodes after a predetermined period of time to partially catch injected charge beneath the electrodes and to use caught charge as a bias charge.A solid state image pick-up apparatus is also disclosed which includes the above-mentioned charge transfer device and carries out their operation in the vertical blanking period.
摘要翻译：在多个电极位于形成在半导体基板上的绝缘层上的电荷转移装置中，以及设置有输入部分和转印部分的电荷转移装置中，将由施加到输入部分的电位确定的预定量的电荷引入在驱动转印部分上的电极的同时在预定电极下面的部分，将这样的电位施加到多个电极中的每个电极下方的基板的表面区域成为累积状态，从而将预定量的电荷注入在预定时间段之后将电极施加到电极上以部分地捕获电极下方的注入电荷，并且使用捕获的电荷作为偏置电荷。还公开了一种固态图像拾取装置，其包括上述电荷转移装置，并在垂直消隐期间进行其操作。

2. 发明申请

US20130314357A1 TACTILE SENSATION PROVIDING DEVICE 有权
标题翻译：提供传感器的触觉传感器
公开(公告)号：US20130314357A1
公开(公告)日：2013-11-28
申请号：US13982244
申请日：2012-01-27
申请人： Tomohiro Sudou , Hiroshi Tsuruta , Atsuo Chiba , Motoaki Abe , Nayu Nomachi , Hisae Honma
发明人： Tomohiro Sudou , Hiroshi Tsuruta , Atsuo Chiba , Motoaki Abe , Nayu Nomachi , Hisae Honma
IPC分类号： G06F3/01
CPC分类号： G06F3/016 , G06F3/0488 , G06F2203/014
摘要： The tactile sensation providing device according to the present invention includes a touch sensor (120) that detects contact, a tactile sensation providing unit (130) that provides a tactile sensation to a contacting object in contact with the touch sensor (120), and a control unit (110) that controls the tactile sensation providing unit (130), when the touch sensor (120) detects a slide operation by the contacting object, to provide the tactile sensation continuously while varying the tactile sensation provided to the contacting object during the slide operation in accordance with a position of the contacting object during the slide operation, whereby can provide the user's finger, when detecting a slide operation by a user, with a tactile sensation that varies during the slide operation in accordance with the position of the user's finger during the slide operation.
摘要翻译：根据本发明的触觉感觉提供装置包括检测接触的触摸传感器（120），提供与触摸传感器（120）接触的接触物体的触感的触觉感觉提供单元（130），以及控制单元（110），当触摸传感器（120）检测到接触物体的滑动操作时，控制触觉感觉提供单元（130），以连续地提供触觉，同时改变在接触对象期间提供给接触对象的触感在滑动操作期间根据接触物体的位置滑动操作，由此可以在用户检测滑动操作时提供使用者的手指，其触觉在滑动操作期间根据使用者的位置而变化手指在幻灯片操作期间。

3. 发明授权

US09285881B2 Tactile sensation providing device 有权
标题翻译：触觉感觉提供装置
公开(公告)号：US09285881B2
公开(公告)日：2016-03-15
申请号：US13982244
申请日：2012-01-27
申请人： Tomohiro Sudou , Hiroshi Tsuruta , Atsuo Chiba , Motoaki Abe , Nayu Nomachi , Hisae Honma
发明人： Tomohiro Sudou , Hiroshi Tsuruta , Atsuo Chiba , Motoaki Abe , Nayu Nomachi , Hisae Honma
IPC分类号： G06F3/01 , G06F3/0488
CPC分类号： G06F3/016 , G06F3/0488 , G06F2203/014
摘要： The tactile sensation providing device according to the present invention includes a touch sensor (120) that detects contact, a tactile sensation providing unit (130) that provides a tactile sensation to a contacting object in contact with the touch sensor (120), and a control unit (110) that controls the tactile sensation providing unit (130), when the touch sensor (120) detects a slide operation by the contacting object, to provide the tactile sensation continuously while varying the tactile sensation provided to the contacting object during the slide operation in accordance with a position of the contacting object during the slide operation, whereby can provide the user's finger, when detecting a slide operation by a user, with a tactile sensation that varies during the slide operation in accordance with the position of the user's finger during the slide operation.
摘要翻译：根据本发明的触觉感觉提供装置包括检测接触的触摸传感器（120），提供与触摸传感器（120）接触的接触物体的触感的触觉感觉提供单元（130），以及控制单元（110），当触摸传感器（120）检测到接触物体的滑动操作时，控制触觉感觉提供单元（130），以连续地提供触觉，同时改变在接触对象期间提供给接触对象的触感在滑动操作期间根据接触物体的位置滑动操作，由此可以在用户检测滑动操作时提供使用者的手指，其触觉在滑动操作期间根据使用者的位置而变化手指在幻灯片操作期间。

4. 发明授权

US5539536A Linear imaging sensor having improved charged transfer circuitry 失效
标题翻译：具有改进的充电转移电路的线性成像传感器
公开(公告)号：US5539536A
公开(公告)日：1996-07-23
申请号：US33364
申请日：1993-03-18
申请人： Yasuhito Maki , Motoaki Abe , Tadakuni Narabu , Hideo Nomura
发明人： Yasuhito Maki , Motoaki Abe , Tadakuni Narabu , Hideo Nomura
IPC分类号： H04N1/028 , H04N5/341 , H04N5/361 , H04N5/372 , H04N5/376 , H04N5/335
CPC分类号： H04N3/1581
摘要： A linear sensor for sampling vertically opposed pixels of a plurality of vertically arranged sensor rows substantially at a time. A plurality of horizontal transfer registers and a plurality of shift gates are provided to oppose the plurality of sensor rows. A vertical transfer register is provided at one end of the plurality of horizontal transfer registers. In the vertical transfer register, the signal charges which have been transferred by the plurality of horizontal transfer registers are transferred sequentially in vertical direction. A charge/voltage converter unit is provided at the output of the vertical transfer register. The signal charges accumulated in the vertically opposed pixels are sequentially transferred to the charge/voltage converter unit in a repetitive manner.
摘要翻译：一种线性传感器，用于基本上每次对多个垂直布置的传感器行的垂直相对的像素进行采样。提供多个水平传送寄存器和多个移位门以与多个传感器行相对。在多个水平传送寄存器的一端设置垂直传送寄存器。在垂直传送寄存器中，由多个水平传送寄存器传送的信号电荷在垂直方向依次传送。在垂直传输寄存器的输出端提供一个充电/电压转换器单元。累积在垂直相对的像素中的信号电荷被重复地依次传送到电荷/电压转换器单元。

5. 发明申请

US20120244803A1 COMMUNICATION SYSTEM, COMMUNICATION DEVICE, AND COMMUNICATION METHOD 审中-公开
标题翻译：通信系统，通信设备和通信方法
公开(公告)号：US20120244803A1
公开(公告)日：2012-09-27
申请号：US13240622
申请日：2011-09-22
申请人： Tomohiro Sudou , Motoaki Abe , Atsuo Chiba , Nayu Nomachi , Hiroshi Tsuruta
发明人： Tomohiro Sudou , Motoaki Abe , Atsuo Chiba , Nayu Nomachi , Hiroshi Tsuruta
IPC分类号： H04B5/00
CPC分类号： H04M1/7253 , G06F3/017 , H04M2250/12
摘要： A communication system includes a first communication device and a second communication device. The first communication device includes a first near field communication part, a state detection part, and a first control part. The first control part, based on the state of the device itself detected by the state detection part, selects an output pattern for signals output from the first near field communication part and controls the first near field communication part so as to output signals of the selected output pattern. The second communication device includes a notification part, a second near field communication part, a memory, and a second control part. The second control part identifies the state of the first communication device corresponding to the pattern of the received signals, and provides notification of the identified state of the first communication device via the notification part.
摘要翻译：通信系统包括第一通信设备和第二通信设备。第一通信设备包括第一近场通信部分，状态检测部分和第一控制部分。第一控制部分基于由状态检测部分检测到的设备本身的状态，选择从第一近场通信部分输出的信号的输出模式，并控制第一近场通信部分，以输出所选择的信号输出模式。第二通信设备包括通知部分，第二近场通信部分，存储器和第二控制部分。第二控制部分识别对应于接收信号的模式的第一通信设备的状态，并且经由通知部分提供第一通信设备的已识别状态的通知。

6. 发明授权

US4114254A Method for manufacture of a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US4114254A
公开(公告)日：1978-09-19
申请号：US669326
申请日：1976-03-22
申请人： Teruaki Aoki , Motoaki Abe
发明人： Teruaki Aoki , Motoaki Abe
IPC分类号： H01L29/78 , H01L21/00 , H01L21/316 , H01L21/331 , H01L21/336 , H01L29/00 , H01L29/73 , B01J17/00
CPC分类号： H01L21/316 , H01L21/00 , H01L29/00 , Y10S257/905 , Y10S438/911 , Y10S438/945
摘要： A semiconductor device and method of making the same is disclosed having a surface passivation film of a polycrystalline silicon layer containing 2 to 45 atomic percent of oxygen atoms.The polycrystalline silicon layer is locally electrically insulated by oxidizing throughout the thickness of the layer.The local oxidizing treatment causes the polycrystalline or silicon layer to pattern.
摘要翻译：公开了一种半导体器件及其制造方法，其具有含有2至45原子％氧原子的多晶硅层的表面钝化膜。

7. 发明授权

US5801850A Linear sensor having a plurality of sensor rows 失效
标题翻译：具有多个传感器行的线性传感器
公开(公告)号：US5801850A
公开(公告)日：1998-09-01
申请号：US677471
申请日：1996-07-10
申请人： Yasuhito Maki , Motoaki Abe , Tadakuni Narabu , Hideo Nomura
发明人： Yasuhito Maki , Motoaki Abe , Tadakuni Narabu , Hideo Nomura
IPC分类号： H04N1/028 , H04N5/341 , H04N5/361 , H04N5/372 , H04N5/376 , H04N5/335
CPC分类号： H04N3/1581
摘要： A linear sensor for sampling vertically opposed pixels of a plurality of vertically arranged sensor rows substantially at a time. A plurality of horizontal transfer registers and a plurality of shift gates are provided to oppose the plurality of sensor rows. A vertical transfer register is provided at one end of the plurality of horizontal transfer registers. In the vertical transfer register, the signal charges which have been transferred by the plurality of horizontal transfer registers are transferred sequentially in vertical direction. A charge/voltage converter unit is provided at the output of the vertical transfer register. The signal charges accumulated in the vertically opposed pixels are sequentially transferred to the charge/voltage converter unit in a repetitive manner.
摘要翻译：一种线性传感器，用于基本上每次对多个垂直布置的传感器行的垂直相对的像素进行采样。提供多个水平传送寄存器和多个移位门以与多个传感器行相对。在多个水平传送寄存器的一端设置垂直传送寄存器。在垂直传送寄存器中，由多个水平传送寄存器传送的信号电荷在垂直方向依次传送。在垂直传输寄存器的输出端提供一个充电/电压转换器单元。累积在垂直相对的像素中的信号电荷被重复地依次传送到电荷/电压转换器单元。

8. 发明授权

US4081292A Method of manufacturing a semi-insulating silicon layer 失效
标题翻译：制造半绝缘硅层的方法
公开(公告)号：US4081292A
公开(公告)日：1978-03-28
申请号：US678417
申请日：1976-04-19
申请人： Teruaki Aoki , Takeshi Matsushita , Tadayoshi Mifune , Motoaki Abe
发明人： Teruaki Aoki , Takeshi Matsushita , Tadayoshi Mifune , Motoaki Abe
IPC分类号： H01L29/73 , H01L21/00 , H01L21/265 , H01L21/329 , H01L21/331 , H01L21/76 , H01L23/29 , H01L29/78 , H01L21/26
CPC分类号： H01L21/00 , H01L23/291 , H01L2924/0002
摘要： Silicon ions are implanted in a silicon dioxide layer on a silicon substrate so that the dioxide layer is converted into a semi-insulating layer having an improved passivation property.
摘要翻译：将硅离子注入到硅衬底上的二氧化硅层中，使得二氧化层转化为具有改善的钝化性质的半绝缘层。

9. 发明授权

US4012762A Semiconductor field effect device having oxygen enriched polycrystalline silicon 失效
标题翻译：具有富氧多晶硅的半导体场效应器件
公开(公告)号：US4012762A
公开(公告)日：1977-03-15
申请号：US587153
申请日：1975-06-16
申请人： Motoaki Abe , Teruaki Aoki
发明人： Motoaki Abe , Teruaki Aoki
IPC分类号： H01L29/78 , H01L21/00 , H01L21/283 , H01L21/768 , H01L23/522 , H01L29/00 , H01L29/76 , H01L29/34
CPC分类号： H01L29/00 , H01L21/00 , H01L29/76 , H01L2924/0002 , Y10S257/905
摘要： A Metal Insulator Semiconductor (MIS) field effect device has an oxygen-doped polycrystalline silicon layer on the field portion in order to prevent an unwanted parasitic inversion layer. The oxygen-doped polycrystalline silicon layer contains oxygen in the range of 2 to 40 atomic percent.
摘要翻译：金属绝缘体半导体（MIS）场效应器件在场部分具有氧掺杂多晶硅层，以防止不期望的寄生反转层。氧掺杂多晶硅层含有2至40原子％范围内的氧。

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