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    • 5. 发明申请
    • DOCKING STATION OF ELECTRONIC APPARATUS
    • 电子装置锁定站
    • US20090161303A1
    • 2009-06-25
    • US12256260
    • 2008-10-22
    • Toshiyuki Hirota
    • Toshiyuki Hirota
    • G06F1/16
    • G06F1/1632
    • According to one embodiment, a docking station for docking therewith a portable computer through connectors includes a docker side control apparatus for energizing an electromagnet to bring a securing mechanism of a PC into a state where the lock of the securing mechanism can be released, and an authentication control apparatus for authenticating a user through a fingerprint sensor or the like. When the user is authenticated as a regular user through the authentication control apparatus, the docker side control apparatus energizes the electromagnet to bring the securing by the securing mechanism into a state where the securing can be released.
    • 根据一个实施例,用于通过连接器对接便携式计算机的对接站包括用于激励电磁体以使PC的固定机构进入可以释放固定机构的锁定的状态的码头侧控制装置,以及 用于通过指纹传感器等认证用户的认证控制装置。 当用户通过认证控制装置认证为普通用户时,码头侧控制装置使电磁铁通电,使得固定机构的固定能够释放固定的状态。
    • 8. 发明申请
    • Electronic apparatus and communication control method
    • 电子仪器和通讯控制方法
    • US20060139220A1
    • 2006-06-29
    • US11315338
    • 2005-12-23
    • Toshiyuki HirotaKoichi Kaji
    • Toshiyuki HirotaKoichi Kaji
    • H01Q1/24
    • H04B7/0802G06F1/1616G06F1/1698H01Q1/2266H01Q1/2291H01Q21/29H04B7/0602
    • An electronic apparatus comprises antennas, a first radio communication unit which performs radio communication by a first communication system having an antenna switching function in response to a reception state of electronic waves when the first communication unit is connected to any one of the antennas, a second communication unit which performs radio communication by a second communication system different from the first system when the second communication unit is connected to any one of the antennas, a setting unit which sets priorities of connection to the antennas in the first and the second communication unit, and a connection unit which connects any one of the antennas to a radio communication unit high in priority and connects the antennas not connected to the communication unit high in priority to a radio communication unit low in priority on the basis of the priorities which is set by the setting unit.
    • 电子设备包括天线,第一无线电通信单元,当第一通信单元连接到天线中的任何一个时,响应于电子波的接收状态,具有天线切换功能的第一通信系统执行无线电通信,第二无线通信单元 通信单元,当所述第二通信单元连接到所述天线中的任一个时,由与所述第一系统不同的第二通信系统执行无线电通信;设置单元,其设置与所述第一和第二通信单元中的天线的连接的优先级, 以及连接单元,其将天线中的任一个连接到优先级高的无线电通信单元,基于优先级低优先级将低优先级的无线电通信单元优先地连接到优先级高的无线电通信单元,将未连接到通信单元的天线连接到优先级高的优先级, 设置单位。
    • 10. 发明授权
    • HSG lower electrode structure having a neck supported by a silicon layer
    • HSG下电极结构具有由硅层支撑的颈部
    • US06342714B1
    • 2002-01-29
    • US09249016
    • 1999-02-12
    • Toshiyuki HirotaIchiro Honma
    • Toshiyuki HirotaIchiro Honma
    • H01L27108
    • H01L28/84
    • A hemispherical grained (HSG) lower electrode, and its manufacturing method, are disclosed in which the yield is enhanced by suppressing the depletion due to insufficient diffusion of an impurity into the hemispherical grains (abbreviated also as HSGs) to reduce the deterioration in the capacity caused by the defect on the negative (lower) electrode side, and preventing the fracture of the HSGs. In a method of forming a capacitor composed of a polysilicon lower electrode, a dielectric film, and an upper electrode, the method of this invention includes at least a step of forming HSG silicon on the lower electrode, where each of its grains has a neck with decreased diameter on the side of the contact plane with the lower electrode, a step of depositing a silicon film covering the HSGs by filling the gaps between the lower electrode in the periphery of the necks and the HSGs while maintaining the rugged shape of the formed HSGs, a step of forming a dielectric film, and a step of forming an upper electrode.
    • 公开了一种半球形颗粒(HSG)下电极及其制造方法,其中通过抑制由于杂质扩散到半球形颗粒(简称为HSG)中的不足而导致的消耗增加,以减少容量的劣化 由负极(下)电极侧的缺陷引起,并防止HSG的断裂。 在形成由多晶硅下电极,电介质膜和上电极构成的电容器的方法中,本发明的方法至少包括在下电极上形成HSG硅的步骤,其中每个晶粒具有颈部 在与下电极的接触面一侧具有减小的直径的步骤,通过填充颈部周边的下电极和HSG之间的间隙,沉积覆盖HSG的硅膜的步骤,同时保持形成的凹凸形状 HSG,形成电介质膜的步骤以及形成上电极的步骤。