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    • 3. 发明授权
    • Magnetoresistance effect type thin film magnetic head using high
coercion films
    • 使用高强度膜的磁阻效应型薄膜磁头
    • US5402292A
    • 1995-03-28
    • US951985
    • 1992-09-25
    • Tomohisa KomodaRyoji MinakataTohru KiraAkiyoshi FujiiHiroshi SuzukiAtsuo Mukai
    • Tomohisa KomodaRyoji MinakataTohru KiraAkiyoshi FujiiHiroshi SuzukiAtsuo Mukai
    • G11B5/39G11B5/187G11B5/31
    • G11B5/3925G11B5/3903G11B5/3932
    • A magnetoresistance effect type thin film magnetic head includes a MR element having the electrical resistance changed according to a change in an applied signal magnetic field, a lead electrode for detecting a voltage change generated across the ends of the MR element in which a change in electrical resistance is generated, and high coercive force films for applying a weak magnetic field to the MR element. The high coercive force films are arranged in the proximity of the ends of the MR element and at a predetermined position between the ends. According to this structure, a weak magnetic field is applied in uniform over the entire MR element to facilitate unification of magnetic domain of the MR element even in the case of a long MR element. Therefore, unification of magnetic domain can easily be carried out over the entire region of the MR element without increasing the film thickness of the high coercive force film even in a case of a wide track width, resulting in a thin film magnetic head with no Barkhausen noise generation.
    • 磁阻效应型薄膜磁头包括具有根据施加的信号磁场的变化而改变的电阻的MR元件,用于检测在MR元件的两端产生的电压变化的引线电极,其中电变化 产生电阻,以及用于向MR元件施加弱磁场的高矫顽力膜。 高矫顽力膜布置在MR元件的端部附近并且在端部之间的预定位置处。 根据该结构,在整个MR元件上施加均匀的弱磁场,以便即使在长MR元件的情况下也能使MR元件的磁畴的统一化。 因此,即使在宽磁道宽度的情况下,也可以在MR元件的整个区域上容易地进行磁畴的统一,而不会增加高矫顽力膜的膜厚,导致没有Barkhausen的薄膜磁头 噪音发生。