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1. 发明授权

US4816878A Negative resistance semiconductor device 失效
标题翻译：负电阻半导体器件
公开(公告)号：US4816878A
公开(公告)日：1989-03-28
申请号：US929783
申请日：1986-11-13
申请人： Hiroyuki Kano , Masafumi Hashimoto , Nobuhiko Sawaki
发明人： Hiroyuki Kano , Masafumi Hashimoto , Nobuhiko Sawaki
IPC分类号： H01L29/80 , H01L29/15 , H01L29/205 , H01L29/68 , H01L29/86 , H01L27/12 , H01L29/161
CPC分类号： H01L29/86 , H01L29/155
摘要： A semiconductor device having a superlattice structure, which comprises at least one unit structure including first and third semiconductor layers as quantum well layers, and a second semiconductor layer as a barrier layer, which are arranged alternately on each other is described. The first semiconductor layer has a higher impurity concentration than the third semiconductor layer and has a quantum energy level determined by its thickness. The third semiconductor layer is of a thickness having quantum energy levels, one of which is lower than that of the first semiconductor layer and the second of which is equal to or higher than that of the first semiconductor layer. The second semiconductor layer is of a thickness which allows electrons existing at the second quantum energy level of the third semiconductor layer to transfer easily from the third to the first semiconductor layer. An increase in voltage applied to the semiconductor device causes electrons to transfer to the first semiconductor layer through the second quantum energy level of the third semiconductor layer to reduce the mobility of electrons in the first semiconductor layer, thus causing the semiconductor device to develop a negative resistance.
摘要翻译：描述了具有超晶格结构的半导体器件，其包括至少一个包括作为量子阱层的第一和第三半导体层以及彼此交替布置的阻挡层的第二半导体层的单元结构。第一半导体层具有比第三半导体层更高的杂质浓度，并且具有由其厚度确定的量子能级。第三半导体层具有量子能级的厚度，其中一个低于第一半导体层的厚度，第二半导体层的厚度等于或高于第一半导体层的厚度。第二半导体层的厚度允许存在于第三半导体层的第二量子能级的电子容易地从第三半导体层传输到第一半导体层。施加到半导体器件的电压的增加导致电子通过第三半导体层的第二量子能级转移到第一半导体层，以降低第一半导体层中的电子的迁移率，从而使得半导体器件产生负的抵抗性。

2. 发明授权

US4925810A Compound semiconductor device and a method of manufacturing the same 失效
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US4925810A
公开(公告)日：1990-05-15
申请号：US397367
申请日：1989-08-24
申请人： Hiroyuki Kano , Takatoshi Kato , Masafumi Hashimoto
发明人： Hiroyuki Kano , Takatoshi Kato , Masafumi Hashimoto
IPC分类号： H01L21/76 , H01L21/20 , H01L21/203 , H01L21/26
CPC分类号： H01L21/02546 , H01L21/02381 , H01L21/02636 , Y10S148/017 , Y10S148/026 , Y10S148/097 , Y10S148/169 , Y10S438/933 , Y10S438/938 , Y10S438/969
摘要： A compound semiconductor device comprises a substrate formed from a single crystal of silicon, a layer of an insulator formed on a portion of a surface of the substrate, at least one layer of a high resistance compound semiconductor formed on the insulator layer, and at least one layer of a single crystal of a compound semiconductor formed on a different portion of the substrate surface from the insulator layer. The device can be manufactured by forming an insulator layer on one portion of a surface of a single crystal silicon substrate, and growing a compound semiconductor by epitaxy on the insulator layer and on the different portion from the insulator layer. One of useful applications is a hybrid semiconductor device having a compound semiconductor formed from e.g. GaAs on a silicon substrate.
摘要翻译：化合物半导体器件包括由单晶硅形成的衬底，形成在衬底的表面的一部分上的绝缘体层，至少一层形成在绝缘体层上的高电阻化合物半导体，并且至少形成在与绝缘体层的衬底表面的不同部分上的化合物半导体的单晶的一层。该器件可以通过在单晶硅衬底的一个表面上形成绝缘体层并通过在绝缘体层上和绝缘体层的不同部分上的外延生长化合物半导体来制造。有用的应用之一是具有由例如化合物形成的化合物半导体的混合半导体器件。 GaAs在硅衬底上。

3. 发明授权

US09713241B2 Reactive-species supply device and surface treatment apparatus 有权
公开(公告)号：US09713241B2
公开(公告)日：2017-07-18
申请号：US13807249
申请日：2011-06-30
申请人： Masaru Hori , Hiroyuki Kano , Tetsunori Kawasumi , Naofumi Yoshida , Akihiro Kawajiri , Toshimitsu Watanabe , Joji Isozumi
发明人： Masaru Hori , Hiroyuki Kano , Tetsunori Kawasumi , Naofumi Yoshida , Akihiro Kawajiri , Toshimitsu Watanabe , Joji Isozumi
IPC分类号： H05H1/00 , H01J37/00 , H05H1/24 , H01J37/32 , H05H1/48
CPC分类号： H05H1/24 , H01J37/32559 , H01J37/32733 , H05H1/48 , H05H2001/485 , H05H2001/488 , H05H2245/123
摘要： A reactive-species supply device is configured to supply a treatment gas to an electric discharge space, for thereby supplying at least a reactive species formed in a plasma, to an object. The reactive-species supply device includes (a) at least one pair of electrodes configured to form the electric discharge space and (b) an electrode protection device configured to protect the electrodes from the treatment gas. Also disclosed is a surface treatment apparatus that includes the reactive-species supply device.

4. 发明授权

US09447518B2 Radical generator and molecular beam epitaxy apparatus 有权
标题翻译：自由基发生器和分子束外延装置
公开(公告)号：US09447518B2
公开(公告)日：2016-09-20
申请号：US13819284
申请日：2011-08-24
申请人： Masaru Hori , Hiroshi Amano , Hiroyuki Kano , Shoji Den , Koji Yamakawa
发明人： Masaru Hori , Hiroshi Amano , Hiroyuki Kano , Shoji Den , Koji Yamakawa
IPC分类号： C23C16/00 , H01L21/326 , C30B23/02 , H05H1/46 , H01J37/32 , C30B23/06 , H05H1/30 , H05H1/24
CPC分类号： H01J37/321 , C30B23/02 , C30B23/066 , C30B25/14 , C30B29/403 , H01J37/3178 , H01J37/32091 , H01J37/32357 , H01J37/3244 , H01J37/32541 , H01J37/3266 , H01J2237/006 , H01J2237/083 , H01J2237/327 , H01J2237/3321 , H05H1/30 , H05H1/46 , H05H2001/2462 , H05H2001/2468
摘要： A radical generator includes a supply tube, a plasma-generating tube, a coil winding about an outer circumference of the plasma-generating tube, for generating an inductively coupled plasma in the plasma-generating tube, an electrode for generating a capacitively coupled plasma in the plasma-generating tube and adding the capacitively coupled plasma to the inductively coupled plasma, and a parasitic-plasma-preventing tube including a dielectric material which extends from a bottom of the plasma-generating tube to an opening of the supply tube in a space between the bottom and the opening, and a tip part thereof is inserted into the supply tube to cover an inner wall of the supply tube for preventing a generation of a parasitic plasma between the electrode and the inner wall of the supply tube.
摘要翻译：自由基发生器包括供给管，等离子体产生管，围绕等离子体产生管的外圆周的线圈绕组，用于在等离子体发生管中产生电感耦合等离子体，用于产生电容耦合等离子体的电极等离子体发生管，并将电容耦合等离子体添加到电感耦合等离子体;以及寄生等离子体防止管，其包括从等离子体产生管的底部延伸到供应管的开口的电介质材料在底部和开口之间，并且其顶端部分插入供应管中以覆盖供应管的内壁，以防止在电极和供应管的内壁之间产生寄生等离子体。

5. 发明授权

US09090332B2 Noise reduction device 有权
标题翻译：降噪装置
公开(公告)号：US09090332B2
公开(公告)日：2015-07-28
申请号：US12594385
申请日：2008-12-11
申请人： Yoshifumi Asao , Hiroyuki Kano , Masaaki Higashida , Tsuyoshi Maeda , Toshihiro Ezaki
发明人： Yoshifumi Asao , Hiroyuki Kano , Masaaki Higashida , Tsuyoshi Maeda , Toshihiro Ezaki
IPC分类号： G10K11/16 , A61F11/06 , H03B29/00 , B64C1/40 , B60R13/08 , G10K11/178
CPC分类号： B64C1/40 , B60R13/0815 , G10K11/178 , G10K2210/1281 , G10K2210/3221 , Y02T50/46
摘要： A noise reduction device, including a microphone for detecting noise, a noise controller for reversing the phase of noise detected by the microphone based on information outputted from the microphone, and a speaker for outputting sound based on information outputted from the noise controller, is arranged at a seat surrounded by a shell portion having a cavity, wherein a speaker is disposed in the cavity of the shell portion.
摘要翻译：一种降噪装置，包括用于检测噪声的麦克风，用于基于从麦克风输出的信息来反转麦克风检测到的噪声相位的噪声控制器，以及基于从噪声控制器输出的信息输出声音的扬声器。在由具有空腔的外壳部分包围的座位处，其中扬声器设置在外壳部分的空腔中。

6. 发明申请

US20130168361A1 REACTIVE-SPECIES SUPPLY DEVICE AND SURFACE TREATMENT APPARATUS 有权
标题翻译：反应物供应装置和表面处理装置
公开(公告)号：US20130168361A1
公开(公告)日：2013-07-04
申请号：US13807204
申请日：2011-06-30
申请人： Masaru Hori , Hiroyuki Kano , Kazuaki Mori , Nobuyuki Nakane , Toshimitsu Watanabe , Joji Isozumi
发明人： Masaru Hori , Hiroyuki Kano , Kazuaki Mori , Nobuyuki Nakane , Toshimitsu Watanabe , Joji Isozumi
IPC分类号： B23H1/00
CPC分类号： B23H1/00 , H05H1/48 , H05H2001/485 , H05H2001/488 , H05H2245/123
摘要： A reactive-species supply device is configured to supply a treatment gas to an electric discharge space that is formed by at least one pair of electrodes, for thereby supplying at least a reactive species formed in a plasma, to an object through a reactive-species output port. The reactive-species supply device includes (a) a reactive-species outlet passage disposed between the electric discharge space and the reactive-species output port and (b) an earth ground member disposed in a portion of the reactive-species outlet passage. The portion of the reactive-species outlet passage is distant, by a given distance, from the reactive-species output port. Also disclosed is a surface treatment apparatus that includes the reactive-species supply device.
摘要翻译：反应物种供应装置被配置为将处理气体供应到由至少一对电极形成的放电空间，从而通过反应物种将至少一种形成在等离子体中的反应性物质供应给物体输出端口反应物种供应装置包括（a）设置在放电空间和反应物种输出端口之间的反应物种出口通道和（b）设置在反应物种出口通道的一部分中的接地构件。反应物种出口通道的部分距离反应物种输出端口相距一定距离。还公开了包括反应物种供应装置的表面处理装置。

7. 发明授权

US08411873B2 Noise control device 有权
标题翻译：噪音控制装置
公开(公告)号：US08411873B2
公开(公告)日：2013-04-02
申请号：US12528181
申请日：2008-12-24
申请人： Hiroyuki Kano
发明人： Hiroyuki Kano
IPC分类号： A61F11/06
CPC分类号： G10K11/178 , B64C2220/00 , G10K2210/128 , G10K2210/3022 , G10K2210/3023 , G10K2210/3026 , G10K2210/3028 , G10K2210/3033 , G10K2210/30391 , G10K2210/3046 , G10K2210/3055 , G10K2210/3056 , G10K2210/3221 , G10K2210/503
摘要： A noise control device eliminates a possibility that a noise arriving at a control point is increased as compared to a case where noise control is not performed and has a reduced circuit scale. The device includes a controlling noise detector for detecting a given noise to output a controlling noise signal, a controlling filter section for signal-processing the controlling noise signal, by using a preset fixed filter coefficient, to output a control signal, and a control speaker for reducing the given noise, by emitting toward the control point a control sound based on the control signal. The device also includes a noise determination section for determining whether the given noise is a noise corresponding to the fixed filter coefficient, and an output control section for stopping output of the control signal from the controlling filter section when the given noise does not correspond.
摘要翻译：噪声控制装置消除了与不执行噪声控制并且具有减小的电路规模的情况相比，到达控制点的噪声增加的可能性。该装置包括用于检测给定噪声以输出控制噪声信号的控制噪声检测器，用于使用预设的固定滤波器系数信号处理控制噪声信号的控制滤波器部分，以输出控制信号，以及控制扬声器为了减少给定的噪声，通过向控制点发射基于控制信号的控制声音。该装置还包括一个噪声确定部分，用于确定给定噪声是否是与固定滤波器系数相对应的噪声;以及输出控制部分，用于在给定噪声不对应时停止来自控制滤波器部分的控制信号的输出。

8. 发明申请

US20130034246A1 DIFFRACTED SOUND REDUCTION DEVICE, DIFFRACTED SOUND REDUCTION METHOD, AND FILTER COEFFICIENT DETERMINATION METHOD 有权
标题翻译：衍射衰减装置，衍射减影法和滤光系数确定方法
公开(公告)号：US20130034246A1
公开(公告)日：2013-02-07
申请号：US13641250
申请日：2012-02-17
申请人： Hiroyuki Kano
发明人： Hiroyuki Kano
IPC分类号： H03G3/00
CPC分类号： H04S7/305 , H04R1/403 , H04R3/12 , H04R2217/03 , H04R2499/15
摘要： A diffracted sound reduction device includes: a reproduction speaker that outputs reproduced sound having properties indicated by an input signal; control speakers each of which reproduces corresponding one of control signals, the diffracted sound being a part of the reproduced sound and arriving at corresponding one of the control points except the control point at the listener's position; and control filters each of which filters the input signal to generate corresponding one of the control signals. Each of the control points faces a corresponding speaker from among the reproduction speaker and the control speakers. Each of the control filters generates the corresponding one of the control signals so that a sound pressure of the diffracted sound at corresponding one of the control points is lower than a sound pressure of direct sound that is a part of the reproduced sound which arrives at the control point of the listener's position.
摘要翻译：衍射声衰减装置包括：再现扬声器，其输出具有由输入信号表示的特性的再现声音; 控制扬声器，每个扬声器再现对应的一个控制信号，衍射声音是再现声音的一部分，并到达除了听者位置的控制点之外的控制点的对应一个; 以及控制滤波器，每个滤波器对输入信号进行滤波以产生对应的一个控制信号。每个控制点面对来自再现扬声器和控制扬声器之间的对应扬声器。每个控制滤波器产生对应的一个控制信号，使得对应的一个控制点处的衍射声的声压低于作为再现声音的一部分的直接声音的声压听众位置的控制点。

9. 发明授权

US08280069B2 Noise reduction apparatus 有权
标题翻译：降噪装置
公开(公告)号：US08280069B2
公开(公告)日：2012-10-02
申请号：US12705743
申请日：2010-02-15
申请人： Tsuyoshi Maeda , Yoshifumi Asao , Hiroyuki Kano
发明人： Tsuyoshi Maeda , Yoshifumi Asao , Hiroyuki Kano
IPC分类号： H04R3/02
CPC分类号： G10K11/17813 , G10K11/1785 , G10K11/17857 , G10K2210/1281 , G10K2210/3027 , G10K2210/3028 , G10K2210/3051 , G10K2210/3219
摘要： In a noise reduction apparatus for controlling noise up to a predetermined upper limited frequency, a distance from a noise source to control point X is made larger than a distance obtained by subtracting a one-half wavelength from a distance, obtained by adding up a distance from the noise source to a noise detecting microphone, a distance corresponding to time as a sum of respective delay time of the noise detecting microphone, a noise controller, and a control speaker, and a distance from the control speaker to control point X, where one wavelength is a period corresponding to the upper limited frequency.
摘要翻译：在用于控制高达预定的上限频率的噪声的降噪装置中，从噪声源到控制点X的距离大于通过从距离中减去一半波长而获得的距离，该距离是通过将距离从噪声源到噪声检测麦克风，与噪声检测麦克风，噪声控制器和控制扬声器的各个延迟时间之和以及从控制扬声器到控制点X的距离的时间对应的距离，其中一个波长是对应于上限频率的周期。

10. 发明授权

US07782463B2 Particle density measuring probe and particle density measuring equipment 有权
标题翻译：颗粒密度测量探头和颗粒密度测量设备
公开(公告)号：US07782463B2
公开(公告)日：2010-08-24
申请号：US11987264
申请日：2007-11-28
申请人： Masanu Hori , Seigo Takashima , Hiroyuki Kano , Shoji Den
发明人： Masanu Hori , Seigo Takashima , Hiroyuki Kano , Shoji Den
IPC分类号： G01N21/00 , G01B9/02 , G01J3/45 , H05B31/26 , H01J7/24
CPC分类号： H05H1/0037 , G01N21/15 , G01N21/68
摘要： Disclosed is a particle density measuring probe for measuring the density of atoms or molecules in a plasma atmosphere by absorption spectroscopy. The probe has a cylindrical light guiding member provided in the plasma atmosphere. At the front end of the light guiding member, there is provided a reflection plate for reflecting light that has propagated through the cylindrical light guiding member. Behind the reflection plate, in a cross section perpendicular to the longitudinal direction of the light guiding member, a part devoid of a portion of wall surface is provided by a predetermined length in the longitudinal direction. A plasma introducing portion allows mutual contact between light passing through this part devoid of a portion of wall surface and atoms or molecules in the plasma atmosphere. The probe has a main body that guides light in an axial direction by total reflection by a side wall, and that is located behind the plasma introducing portion.
摘要翻译：公开了一种用于通过吸收光谱法测量等离子体气氛中的原子或分子的密度的颗粒密度测量探针。探针具有设置在等离子体气氛中的圆柱形导光构件。在导光构件的前端设置有用于反射已经传播通过圆柱形导光构件的光的反射板。在反射板的后方，在与导光部件的纵向垂直的截面中，没有壁面的一部分的部分在长度方向上设置规定的长度。等离子体引入部分允许通过该部分没有壁表面的一部分的光与等离子体气氛中的原子或分子之间的相互接触。探针具有通过侧壁的全反射引导轴向的光的主体，位于等离子体导入部的后方。

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