专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06762065B2 Semiconductor device having ferroelectric capacitor and method for manufacturing the same 失效
标题翻译：具有铁电电容器的半导体器件及其制造方法
公开(公告)号：US06762065B2
公开(公告)日：2004-07-13
申请号：US10448359
申请日：2003-05-30
申请人： Hiroyuki Kanaya , Yasuyuki Taniguchi , Tohru Ozaki , Yoshinori Kumura
发明人： Hiroyuki Kanaya , Yasuyuki Taniguchi , Tohru Ozaki , Yoshinori Kumura
IPC分类号： H01L2100
CPC分类号： H01L27/11502 , H01L21/31116 , H01L21/32136 , H01L27/11507 , H01L28/56 , H01L28/75
摘要： A lower electrode is formed on an insulating film on a semiconductor substrate. A pair of ferroelectric films are formed on the lower electrode separately from each other. An upper electrode is formed on each of the pair of ferroelectric films. A portion of the lower electrode on which the ferroelectric film is formed is thicker than a portion thereof on which the ferroelectric film is not formed. Such a structure is obtained by sequentially depositing the lower electrode, the ferroelectric film, and the upper electrode on the insulating film, forming a mask on the upper-electrode, using this mask to etch the upper-electrode and the ferroelectric film to thereby pattern a pair of upper electrodes and a pair of ferroelectric electrodes, forming such a mask that continuously covers the pair of upper electrodes and the pair of ferroelectric films, and then etching the lower-electrode material film.
摘要翻译：在半导体衬底上的绝缘膜上形成下电极。一对铁电体膜分别形成在下电极上。在一对铁电体膜中的每一个上形成上电极。形成铁电体膜的下部电极的一部分比不形成强电介质膜的部分厚。通过使用该掩模在绝缘膜上依次沉积下电极，铁电体膜和上电极，在上电极上形成掩模，以蚀刻上电极和铁电体膜，从而形成图案一对上电极和一对铁电电极，形成连续地覆盖一对上电极和一对铁电体膜的掩模，然后蚀刻下电极材料膜。

2. 发明授权

US06680499B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06680499B2
公开(公告)日：2004-01-20
申请号：US09988138
申请日：2001-11-19
申请人： Yoshinori Kumura , Hiroyuki Kanaya , Iwao Kunishima
发明人： Yoshinori Kumura , Hiroyuki Kanaya , Iwao Kunishima
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： Provided are a semiconductor memory device that permits increasing the degree of integration without decreasing the capacitance of the capacitor included in a memory cell, and a method of manufacturing the particular semiconductor memory device. Specifically, provided are a semiconductor memory device, comprising a semiconductor substrate, an interlayer insulating film formed on the semiconductor substrate, a first electrode formed on the interlayer insulating film, a first ferroelectric film formed on the first electrode, a second electrode formed on the first ferroelectric film, a second ferroelectric film formed on the second electrode, and a third electrode formed on the second ferroelectric film, and a method of manufacturing the particular semiconductor memory device.
摘要翻译：提供一种允许增加集成度而不减小包括在存储单元中的电容器的电容的半导体存储器件，以及制造特定半导体存储器件的方法。具体地，提供一种半导体存储器件，包括半导体衬底，形成在半导体衬底上的层间绝缘膜，形成在层间绝缘膜上的第一电极，形成在第一电极上的第一铁电膜，形成在第一电极上的第二电极第一铁电体膜，形成在第二电极上的第二铁电体膜和形成在第二铁电体膜上的第三电极，以及制造特定半导体存储器件的方法。

3. 发明授权

US06603161B2 Semiconductor device having ferroelectric capacitor and method for manufacturing the same 失效
标题翻译：具有铁电电容器的半导体装置及其制造方法
公开(公告)号：US06603161B2
公开(公告)日：2003-08-05
申请号：US09801920
申请日：2001-03-09
申请人： Hiroyuki Kanaya , Yasuyuki Taniguchi , Tohru Ozaki , Yoshinori Kumura
发明人： Hiroyuki Kanaya , Yasuyuki Taniguchi , Tohru Ozaki , Yoshinori Kumura
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , H01L21/31116 , H01L21/32136 , H01L27/11507 , H01L28/56 , H01L28/75
摘要： There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.
摘要翻译：提供一种半导体器件，其具有形成在被绝缘体膜覆盖的半导体衬底上的铁电电容器，其中所述强电介质电容器包括：形成在所述绝缘膜上的底部电极; 形成在底部电极上的铁电体膜; 以及形成在强电介质膜上的顶部电极。铁电体膜具有两层铁电体膜或三层铁电体膜的层叠结构。上部铁电膜被金属化，并防止氢在下部铁电层中扩散。堆叠的铁电体膜的晶粒优选不同。

4. 发明申请

US20100072526A1 SEMICONDUCTOR MEMORY DEVICE 审中-公开
标题翻译：半导体存储器件
公开(公告)号：US20100072526A1
公开(公告)日：2010-03-25
申请号：US12554396
申请日：2009-09-04
申请人： Yoshinori Kumura , Hiroyuki Kanaya
发明人： Yoshinori Kumura , Hiroyuki Kanaya
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L28/57 , H01L27/11507 , H01L27/11509
摘要： A semiconductor memory device includes a semiconductor substrate; a ferroelectric capacitor comprising an upper electrode, a ferroelectric film, and a lower electrode above the semiconductor substrate; and an upper interlayer dielectric film surrounding a periphery of the ferroelectric capacitor, wherein a gap is provided between the ferroelectric capacitor and the upper interlayer dielectric film.
摘要翻译：半导体存储器件包括半导体衬底; 一个铁电电容器，包括在半导体衬底之上的上电极，铁电体膜和下电极; 以及围绕所述铁电电容器的周围的上层间绝缘膜，其中在所述铁电电容器和所述上层间电介质膜之间设置有间隙。

5. 发明授权

US07259094B2 Apparatus and method for heat treating thin film 有权
标题翻译：薄膜热处理设备及方法
公开(公告)号：US07259094B2
公开(公告)日：2007-08-21
申请号：US11110933
申请日：2005-04-21
申请人： Katsuaki Natori , Keisuke Nakazawa , Koji Yamakawa , Hiroyuki Kanaya , Yoshinori Kumura , Hiroshi Itokawa , Osamu Arisumi
发明人： Katsuaki Natori , Keisuke Nakazawa , Koji Yamakawa , Hiroyuki Kanaya , Yoshinori Kumura , Hiroshi Itokawa , Osamu Arisumi
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： H01L27/11502 , C23C14/08 , C23C14/5806 , H01L21/67115 , H01L27/11507 , H01L28/65
摘要： An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater which heats the substrate held in the chamber, and an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the substrate.
摘要翻译：公开了一种用于制造半导体器件的装置，其包括容纳待处理基板的室，该基板具有含有至少一种将成为挥发性金属化合物的成分的金属元素的膜，加热基板保持在所述室中的吸附剂和设置在所述室中并通过加热所述基板吸附由所述膜产生的挥发性金属化合物的吸附剂。

6. 发明申请

US20050205910A1 Semiconductor device having ferroelectric memory and manufacturing method of the semiconductor device 审中-公开
标题翻译：具有铁电存储器的半导体器件和半导体器件的制造方法
公开(公告)号：US20050205910A1
公开(公告)日：2005-09-22
申请号：US10960029
申请日：2004-10-08
申请人： Yoshinori Kumura , Hiroyuki Kanaya , Tohru Ozaki
发明人： Yoshinori Kumura , Hiroyuki Kanaya , Tohru Ozaki
IPC分类号： H01L27/105 , H01L21/00 , H01L21/8246 , H01L27/115 , H01L29/76
CPC分类号： H01L27/11502 , H01L27/11507
摘要： A transistor including a source/drain region is formed on a semiconductor substrate. A plug electrode is formed on the source/drain region. A conductive film is formed on the plug electrode. A first insulation film is formed on the conductive film. A lower electrode is formed on the first insulation film, and electrically connected to the conductive film formed on the plug electrode. A ferroelectric film is formed on the lower electrode. An upper electrode is formed on the ferroelectric film.
摘要翻译：包括源极/漏极区域的晶体管形成在半导体衬底上。插头电极形成在源极/漏极区域上。在插头电极上形成导电膜。在导电膜上形成第一绝缘膜。在第一绝缘膜上形成下电极，与形成在插塞电极上的导电膜电连接。在下电极上形成铁电体膜。在铁电体膜上形成上部电极。

7. 发明申请

US20050186767A1 Semiconductor device, apparatus and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050186767A1
公开(公告)日：2005-08-25
申请号：US11110933
申请日：2005-04-21
申请人： Katsuaki Natori , Keisuke Nakazawa , Koji Yamakawa , Hiroyuki Kanaya , Yoshinori Kumura , Hiroshi Itokawa , Osamu Arisumi
发明人： Katsuaki Natori , Keisuke Nakazawa , Koji Yamakawa , Hiroyuki Kanaya , Yoshinori Kumura , Hiroshi Itokawa , Osamu Arisumi
IPC分类号： H01L21/28 , C23C14/08 , C23C14/58 , C23C16/00 , H01L21/00 , H01L21/02 , H01L21/20 , H01L21/26 , H01L21/768 , H01L21/8234 , H01L21/8246 , H01L23/58 , H01L27/105 , H01L27/115 , H01L29/417 , H01L29/76 , H01L31/062
CPC分类号： H01L27/11502 , C23C14/08 , C23C14/5806 , H01L21/67115 , H01L27/11507 , H01L28/65
摘要： An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater which heats the substrate held in the chamber, and an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the substrate.
摘要翻译：公开了一种用于制造半导体器件的装置，其包括容纳待处理基板的室，该基板具有含有至少一种将成为挥发性金属化合物的成分的金属元素的膜，加热基板保持在所述室中的吸附剂和设置在所述室中并通过加热所述基板吸附由所述膜产生的挥发性金属化合物的吸附剂。

8. 发明申请

US20060017086A1 Semiconductor device and method for manufacturing the same 审中-公开
公开(公告)号：US20060017086A1
公开(公告)日：2006-01-26
申请号：US11223958
申请日：2005-09-13
申请人： Hiroyuki Kanaya , Iwao Kunishima , Koji Yamakawa , Tsuyoshi Iwamoto , Hiroshi Mochizuki , Yoshinori Kumura
发明人： Hiroyuki Kanaya , Iwao Kunishima , Koji Yamakawa , Tsuyoshi Iwamoto , Hiroshi Mochizuki , Yoshinori Kumura
IPC分类号： H01L29/94
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/56 , H01L28/57 , H01L28/65
摘要： There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.

9. 发明授权

US07400005B2 Semiconductor memory device having ferroelectric capacitors with hydrogen barriers 失效
标题翻译：具有具有氢屏障的铁电电容器的半导体存储器件
公开(公告)号：US07400005B2
公开(公告)日：2008-07-15
申请号：US11142441
申请日：2005-06-02
申请人： Yoshinori Kumura , Iwao Kunishima , Hiroyuki Kanaya , Tohru Ozaki , Kazuhiro Tomioka
发明人： Yoshinori Kumura , Iwao Kunishima , Hiroyuki Kanaya , Tohru Ozaki , Kazuhiro Tomioka
IPC分类号： H01L29/92
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57 , H01L28/65
摘要： A semiconductor memory device, which prevents the penetration of hydrogen or moisture to a ferroelectric capacitor from its surrounding area including a contact plug portion, comprises a ferroelectric capacitor formed above a semiconductor substrate, a first hydrogen barrier film formed on an upper surface of the ferroelectric capacitor to work as a mask in the formation of the ferroelectric capacitor, a second hydrogen barrier film formed on the upper surface and a side face of the ferroelectric capacitor including on the first hydrogen barrier film, and a contact plug disposed through the first and second hydrogen barrier films, and connected to an upper electrode of the ferroelectric capacitor, a side face thereof being surrounded with the hydrogen barrier films.
摘要翻译：一种半导体存储器件，其防止氢或水分从其包括接触插塞部分的周围区域渗入铁电电容器，包括形成在半导体衬底上的强电介质电容器，形成在铁电体的上表面上的第一氢阻挡膜电容器在形成铁电电容器时用作掩模，在上表面上形成的第二氢阻挡膜和包括在第一氢阻挡膜上的强电介质电容器的侧面，以及通过第一和第二氢阻挡膜，并连接到铁电电容器的上电极，其侧面被氢阻挡膜包围。

10. 发明授权

US07095068B2 Semiconductor memory device having ferroelectric capacitor and method of manufacturing the same 有权
标题翻译：具有铁电电容器的半导体存储器件及其制造方法
公开(公告)号：US07095068B2
公开(公告)日：2006-08-22
申请号：US10455376
申请日：2003-06-06
申请人： Yoshinori Kumura , Iwao Kunishima , Tohru Ozaki , Hiroyuki Kanaya , Shinichi Watanabe
发明人： Yoshinori Kumura , Iwao Kunishima , Tohru Ozaki , Hiroyuki Kanaya , Shinichi Watanabe
IPC分类号： H01L29/76 , H01L27/108
CPC分类号： H01L27/11502 , H01L27/11507
摘要： A semiconductor memory device includes a semiconductor substrate, a first transistor formed on the semiconductor substrate and including a first gate electrode and first and second diffusion layers, a first contact connected to the first diffusion layer, a first conductive oxygen barrier film electrically connected to the first contact and covering at least the upper surface of the first contact, a first ferroelectric capacitor including a first electrode, a second electrode, and a first ferroelectric film interposed between the first and second electrodes, and a first connecting member connected to the first electrode and to the first conductive oxygen barrier film.
摘要翻译：半导体存储器件包括半导体衬底，形成在半导体衬底上的第一晶体管，包括第一栅电极和第一和第二扩散层，与第一扩散层连接的第一触点，与第一导电氧阻隔膜电连接的第一导电氧阻隔膜首先接触并且至少覆盖第一接触件的上表面;第一铁电电容器，包括插入在第一和第二电极之间的第一电极，第二电极和第一铁电体膜;以及连接到第一电极的第一连接构件和第一导电氧阻隔膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式