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1. 发明授权

US07259094B2 Apparatus and method for heat treating thin film 有权
标题翻译：薄膜热处理设备及方法
公开(公告)号：US07259094B2
公开(公告)日：2007-08-21
申请号：US11110933
申请日：2005-04-21
申请人： Katsuaki Natori , Keisuke Nakazawa , Koji Yamakawa , Hiroyuki Kanaya , Yoshinori Kumura , Hiroshi Itokawa , Osamu Arisumi
发明人： Katsuaki Natori , Keisuke Nakazawa , Koji Yamakawa , Hiroyuki Kanaya , Yoshinori Kumura , Hiroshi Itokawa , Osamu Arisumi
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： H01L27/11502 , C23C14/08 , C23C14/5806 , H01L21/67115 , H01L27/11507 , H01L28/65
摘要： An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater which heats the substrate held in the chamber, and an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the substrate.
摘要翻译：公开了一种用于制造半导体器件的装置，其包括容纳待处理基板的室，该基板具有含有至少一种将成为挥发性金属化合物的成分的金属元素的膜，加热基板保持在所述室中的吸附剂和设置在所述室中并通过加热所述基板吸附由所述膜产生的挥发性金属化合物的吸附剂。

2. 发明申请

US20050186767A1 Semiconductor device, apparatus and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050186767A1
公开(公告)日：2005-08-25
申请号：US11110933
申请日：2005-04-21
申请人： Katsuaki Natori , Keisuke Nakazawa , Koji Yamakawa , Hiroyuki Kanaya , Yoshinori Kumura , Hiroshi Itokawa , Osamu Arisumi
发明人： Katsuaki Natori , Keisuke Nakazawa , Koji Yamakawa , Hiroyuki Kanaya , Yoshinori Kumura , Hiroshi Itokawa , Osamu Arisumi
IPC分类号： H01L21/28 , C23C14/08 , C23C14/58 , C23C16/00 , H01L21/00 , H01L21/02 , H01L21/20 , H01L21/26 , H01L21/768 , H01L21/8234 , H01L21/8246 , H01L23/58 , H01L27/105 , H01L27/115 , H01L29/417 , H01L29/76 , H01L31/062
CPC分类号： H01L27/11502 , C23C14/08 , C23C14/5806 , H01L21/67115 , H01L27/11507 , H01L28/65
摘要： An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater which heats the substrate held in the chamber, and an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the substrate.
摘要翻译：公开了一种用于制造半导体器件的装置，其包括容纳待处理基板的室，该基板具有含有至少一种将成为挥发性金属化合物的成分的金属元素的膜，加热基板保持在所述室中的吸附剂和设置在所述室中并通过加热所述基板吸附由所述膜产生的挥发性金属化合物的吸附剂。

3. 发明申请

US20050070043A1 Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050070043A1
公开(公告)日：2005-03-31
申请号：US10673247
申请日：2003-09-30
申请人： Koji Yamakawa , Katsuaki Natori , Soichi Yamazaki , Osamu Arisumi , Hiroshi Itokawa , Hiroyuki Kanaya , Kazuhiro Tomioka , Keisuke Nakazawa , Yasuyuki Taniguchi , Uli Egger
发明人： Koji Yamakawa , Katsuaki Natori , Soichi Yamazaki , Osamu Arisumi , Hiroshi Itokawa , Hiroyuki Kanaya , Kazuhiro Tomioka , Keisuke Nakazawa , Yasuyuki Taniguchi , Uli Egger
IPC分类号： B23Q3/157 , H01L21/00 , H01L21/02 , H01L21/033 , H01L21/311
CPC分类号： H01L28/55 , H01L21/0332 , H01L21/31122 , H01L21/31144 , H01L28/65
摘要： The present invention provides a method for manufacturing a semiconductor device equipped with a capacitor in which a dielectric film is used, wherein a complex oxide is used as a mask material when the dielectric film is etched.
摘要翻译：本发明提供了一种制造半导体器件的方法，所述半导体器件配备有使用电介质膜的电容器，其中当蚀刻所述电介质膜时，使用复合氧化物作为掩模材料。

4. 发明授权

US07105400B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07105400B2
公开(公告)日：2006-09-12
申请号：US10673262
申请日：2003-09-30
申请人： Keitaro Imai , Koji Yamakawa , Hiroshi Itokawa , Katsuaki Natori , Osamu Arisumi , Keisuke Nakazawa , Bum-ki Moon
发明人： Keitaro Imai , Koji Yamakawa , Hiroshi Itokawa , Katsuaki Natori , Osamu Arisumi , Keisuke Nakazawa , Bum-ki Moon
IPC分类号： H01L21/8234 , H01L21/8244 , H01L21/336
CPC分类号： H01L27/11502 , H01L27/11507
摘要： There is disclosed a method of manufacturing a semiconductor device, comprising forming an underlying region including an interlevel insulating film on a semiconductor substrate, forming an alumina film on the underlying region, forming a hole in the alumina film, filling the hole with a bottom electrode film, forming a dielectric film on the bottom electrode film, and forming a top electrode film on the dielectric film.
摘要翻译：公开了一种制造半导体器件的方法，包括在半导体衬底上形成包括层间绝缘膜的下面的区域，在下面的区域上形成氧化铝膜，在氧化铝膜上形成孔，用底部电极填充孔膜，在底部电极膜上形成电介质膜，并在电介质膜上形成顶部电极膜。

5. 发明申请

US20050070031A1 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20050070031A1
公开(公告)日：2005-03-31
申请号：US10673262
申请日：2003-09-30
申请人： Keitaro Imai , Koji Yamakawa , Hiroshi Itokawa , Katsuaki Natori , Osamu Arisumi , Keisuke Nakazawa , Bum-ki Moon
发明人： Keitaro Imai , Koji Yamakawa , Hiroshi Itokawa , Katsuaki Natori , Osamu Arisumi , Keisuke Nakazawa , Bum-ki Moon
IPC分类号： H01L21/00 , H01L21/8246 , H01L27/115
CPC分类号： H01L27/11502 , H01L27/11507
摘要： There is disclosed a method of manufacturing a semiconductor device, comprising forming an underlying region including an interlevel insulating film on a semiconductor substrate, forming an alumina film on the underlying region, forming a hole in the alumina film, filling the hole with a bottom electrode film, forming a dielectric film on the bottom electrode film, and forming a top electrode film on the dielectric film.
摘要翻译：公开了一种制造半导体器件的方法，包括在半导体衬底上形成包括层间绝缘膜的下面的区域，在下面的区域上形成氧化铝膜，在氧化铝膜上形成孔，用底部电极填充孔膜，在底部电极膜上形成电介质膜，并在电介质膜上形成顶部电极膜。

6. 发明授权

US07233040B2 Semiconductor device contains a PbxSr(1−x)[Zr, Ti]xRu(1−x)O3 film in a capacitor 失效
标题翻译：半导体装置在电容器中含有PbxSr（1-x）[Zr，Ti] xRu（1-x）O3膜
公开(公告)号：US07233040B2
公开(公告)日：2007-06-19
申请号：US10833096
申请日：2004-04-28
申请人： Keisuke Nakazawa , Koji Yamakawa , Katsuaki Natori , Soichi Yamazaki , Hiroshi Itokawa , Hiroyuki Kanaya
发明人： Keisuke Nakazawa , Koji Yamakawa , Katsuaki Natori , Soichi Yamazaki , Hiroshi Itokawa , Hiroyuki Kanaya
IPC分类号： H01L29/94
CPC分类号： H01L27/11502 , H01L21/02197 , H01L21/02266 , H01L21/31691 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate and including a film which contains Pb, Sr, Zr, Ti, Ru and O and a dielectric film which contains Pb, Zr, Ti and O and which is provided on the film containing Pb, Sr, Zr, Ti, Ru and O.
摘要翻译：公开了一种半导体器件，包括半导体衬底和设置在半导体衬底之上的电容器，并且包括含有Pb，Sr，Zr，Ti，Ru和O的膜和包含Pb，Zr，Ti和O的电介质膜，提供在含有Pb，Sr，Zr，Ti，Ru和O的膜上

7. 发明授权

US07531408B2 Method of manufacturing a semiconductor device containing a PbxSr(1-x)[Zr,Ti]xRu(1-x)O3 film in a capacitor 失效
标题翻译：在电容器中制造含有PbxSr（1-x）[Zr，Ti] xRu（1-x）O3膜的半导体器件的制造方法
公开(公告)号：US07531408B2
公开(公告)日：2009-05-12
申请号：US11754022
申请日：2007-05-25
申请人： Keisuke Nakazawa , Koji Yamakawa , Katsuaki Natori , Soichi Yamazaki , Hiroshi Itokawa , Hiroyuki Kanaya
发明人： Keisuke Nakazawa , Koji Yamakawa , Katsuaki Natori , Soichi Yamazaki , Hiroshi Itokawa , Hiroyuki Kanaya
IPC分类号： H01L21/8234
CPC分类号： H01L27/11502 , H01L21/02197 , H01L21/02266 , H01L21/31691 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： A method of manufacturing a semiconductor device, including forming a capacitor above a semiconductor substrate, the capacitor including a dielectric film containing Pb, Zr, Ti and O. Forming the capacitor includes forming a crystallized film which contains Pb, Sr, Zr, Ti, Ru and O.
摘要翻译：一种半导体器件的制造方法，包括在半导体衬底上形成电容器，所述电容器包括含有Pb，Zr，Ti和O的电介质膜。形成所述电容器包括形成含有Pb，Sr，Zr，Ti，汝和O.

8. 发明申请

US20050051823A1 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050051823A1
公开(公告)日：2005-03-10
申请号：US10833096
申请日：2004-04-28
申请人： Keisuke Nakazawa , Koji Yamakawa , Katsuaki Natori , Soichi Yamazaki , Hiroshi Itokawa , Hiroyuki Kanaya
发明人： Keisuke Nakazawa , Koji Yamakawa , Katsuaki Natori , Soichi Yamazaki , Hiroshi Itokawa , Hiroyuki Kanaya
IPC分类号： H01L27/105 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8246 , H01L27/115 , H01L21/00 , H01L21/8242 , H01L27/108 , H01L29/76 , H01L31/062
CPC分类号： H01L27/11502 , H01L21/02197 , H01L21/02266 , H01L21/31691 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate and including a film which contains Pb, Sr, Zr, Ti, Ru and O and a dielectric film which contains Pb, Zr, Ti and O and which is provided on the film containing Pb, Sr, Zr, Ti, Ru and O.
摘要翻译：公开了一种半导体器件，包括半导体衬底和设置在半导体衬底之上的电容器，并且包括含有Pb，Sr，Zr，Ti，Ru和O的膜和包含Pb，Zr，Ti和O的电介质膜，提供在含有Pb，Sr，Zr，Ti，Ru和O的膜上

9. 发明申请

US20070231948A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070231948A1
公开(公告)日：2007-10-04
申请号：US11754022
申请日：2007-05-25
申请人： Keisuke Nakazawa , Koji Yamakawa , Katsuaki Natori , Soichi Yamazaki , Hiroshi Itokawa , Hiroyuki Kanaya
发明人： Keisuke Nakazawa , Koji Yamakawa , Katsuaki Natori , Soichi Yamazaki , Hiroshi Itokawa , Hiroyuki Kanaya
IPC分类号： H01L21/00
CPC分类号： H01L27/11502 , H01L21/02197 , H01L21/02266 , H01L21/31691 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： A method of manufacturing a semiconductor device, including forming a capacitor above a semiconductor substrate, the capacitor including a dielectric film containing Pb, Zr, Ti and O. Forming the capacitor includes forming a crystallized film which contains Pb, Sr, Zr, Ti, Ru and O.
摘要翻译：一种制造半导体器件的方法，包括在半导体衬底上形成电容器，所述电容器包括含有Pb，Zr，Ti和O的电介质膜。形成所述电容器包括形成含有Pb，Sr，Zr，Ti，汝和O.

10. 发明申请

US20050001251A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050001251A1
公开(公告)日：2005-01-06
申请号：US10834928
申请日：2004-04-30
申请人： Hiroshi Itokawa , Koji Yamakawa , Katsuaki Natori
发明人： Hiroshi Itokawa , Koji Yamakawa , Katsuaki Natori
IPC分类号： H01L21/316 , H01L21/02 , H01L21/8246 , H01L27/105 , H01L27/108 , H01L27/115
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： A semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate, and including a bottom electrode, a top electrode and a dielectric film between the bottom and top electrodes, the bottom electrode including a conductive film selected from a noble metal film and a noble metal oxide film, a metal oxide film having a perovskite structure, provided between the dielectric film and the conductive film, expressed by ABO3, and containing first metal element as B-site element, and a metal film provided between the conductive film and the metal oxide film, and containing second metal element which is B-site element of a metal oxide having a perovskite structure, a decrease of Gibbs free energy when the second metal element forms oxide being larger than that when the first metal element forms oxide, a thickness of the metal oxide film being 5 nm or less.
摘要翻译：一种半导体器件，包括半导体衬底和设置在半导体衬底之上的电容器，并且在底电极和顶电极之间包括底电极，顶电极和电介质膜，底电极包括选自贵金属膜和由ABO3表示的电介质膜和导电膜之间具有钙钛矿结构的金属氧化物膜，并且含有作为B位元素的第一金属元素的金属氧化物膜和设置在导电膜之间的金属膜和金属氧化物膜，并且含有作为具有钙钛矿结构的金属氧化物的B位元素的第二金属元素，当第二金属元素形成氧化物时，吉布斯自由能的降低大于第一金属元素形成氧化物时的吉布斯自由能的降低，金属氧化物膜的厚度为5nm以下。

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