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1. 发明授权

US06762065B2 Semiconductor device having ferroelectric capacitor and method for manufacturing the same 失效
标题翻译：具有铁电电容器的半导体器件及其制造方法
公开(公告)号：US06762065B2
公开(公告)日：2004-07-13
申请号：US10448359
申请日：2003-05-30
申请人： Hiroyuki Kanaya , Yasuyuki Taniguchi , Tohru Ozaki , Yoshinori Kumura
发明人： Hiroyuki Kanaya , Yasuyuki Taniguchi , Tohru Ozaki , Yoshinori Kumura
IPC分类号： H01L2100
CPC分类号： H01L27/11502 , H01L21/31116 , H01L21/32136 , H01L27/11507 , H01L28/56 , H01L28/75
摘要： A lower electrode is formed on an insulating film on a semiconductor substrate. A pair of ferroelectric films are formed on the lower electrode separately from each other. An upper electrode is formed on each of the pair of ferroelectric films. A portion of the lower electrode on which the ferroelectric film is formed is thicker than a portion thereof on which the ferroelectric film is not formed. Such a structure is obtained by sequentially depositing the lower electrode, the ferroelectric film, and the upper electrode on the insulating film, forming a mask on the upper-electrode, using this mask to etch the upper-electrode and the ferroelectric film to thereby pattern a pair of upper electrodes and a pair of ferroelectric electrodes, forming such a mask that continuously covers the pair of upper electrodes and the pair of ferroelectric films, and then etching the lower-electrode material film.
摘要翻译：在半导体衬底上的绝缘膜上形成下电极。一对铁电体膜分别形成在下电极上。在一对铁电体膜中的每一个上形成上电极。形成铁电体膜的下部电极的一部分比不形成强电介质膜的部分厚。通过使用该掩模在绝缘膜上依次沉积下电极，铁电体膜和上电极，在上电极上形成掩模，以蚀刻上电极和铁电体膜，从而形成图案一对上电极和一对铁电电极，形成连续地覆盖一对上电极和一对铁电体膜的掩模，然后蚀刻下电极材料膜。

2. 发明授权

US06603161B2 Semiconductor device having ferroelectric capacitor and method for manufacturing the same 失效
标题翻译：具有铁电电容器的半导体装置及其制造方法
公开(公告)号：US06603161B2
公开(公告)日：2003-08-05
申请号：US09801920
申请日：2001-03-09
申请人： Hiroyuki Kanaya , Yasuyuki Taniguchi , Tohru Ozaki , Yoshinori Kumura
发明人： Hiroyuki Kanaya , Yasuyuki Taniguchi , Tohru Ozaki , Yoshinori Kumura
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , H01L21/31116 , H01L21/32136 , H01L27/11507 , H01L28/56 , H01L28/75
摘要： There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.
摘要翻译：提供一种半导体器件，其具有形成在被绝缘体膜覆盖的半导体衬底上的铁电电容器，其中所述强电介质电容器包括：形成在所述绝缘膜上的底部电极; 形成在底部电极上的铁电体膜; 以及形成在强电介质膜上的顶部电极。铁电体膜具有两层铁电体膜或三层铁电体膜的层叠结构。上部铁电膜被金属化，并防止氢在下部铁电层中扩散。堆叠的铁电体膜的晶粒优选不同。

3. 发明申请

US20050205910A1 Semiconductor device having ferroelectric memory and manufacturing method of the semiconductor device 审中-公开
标题翻译：具有铁电存储器的半导体器件和半导体器件的制造方法
公开(公告)号：US20050205910A1
公开(公告)日：2005-09-22
申请号：US10960029
申请日：2004-10-08
申请人： Yoshinori Kumura , Hiroyuki Kanaya , Tohru Ozaki
发明人： Yoshinori Kumura , Hiroyuki Kanaya , Tohru Ozaki
IPC分类号： H01L27/105 , H01L21/00 , H01L21/8246 , H01L27/115 , H01L29/76
CPC分类号： H01L27/11502 , H01L27/11507
摘要： A transistor including a source/drain region is formed on a semiconductor substrate. A plug electrode is formed on the source/drain region. A conductive film is formed on the plug electrode. A first insulation film is formed on the conductive film. A lower electrode is formed on the first insulation film, and electrically connected to the conductive film formed on the plug electrode. A ferroelectric film is formed on the lower electrode. An upper electrode is formed on the ferroelectric film.
摘要翻译：包括源极/漏极区域的晶体管形成在半导体衬底上。插头电极形成在源极/漏极区域上。在插头电极上形成导电膜。在导电膜上形成第一绝缘膜。在第一绝缘膜上形成下电极，与形成在插塞电极上的导电膜电连接。在下电极上形成铁电体膜。在铁电体膜上形成上部电极。

4. 发明授权

US07400005B2 Semiconductor memory device having ferroelectric capacitors with hydrogen barriers 失效
标题翻译：具有具有氢屏障的铁电电容器的半导体存储器件
公开(公告)号：US07400005B2
公开(公告)日：2008-07-15
申请号：US11142441
申请日：2005-06-02
申请人： Yoshinori Kumura , Iwao Kunishima , Hiroyuki Kanaya , Tohru Ozaki , Kazuhiro Tomioka
发明人： Yoshinori Kumura , Iwao Kunishima , Hiroyuki Kanaya , Tohru Ozaki , Kazuhiro Tomioka
IPC分类号： H01L29/92
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57 , H01L28/65
摘要： A semiconductor memory device, which prevents the penetration of hydrogen or moisture to a ferroelectric capacitor from its surrounding area including a contact plug portion, comprises a ferroelectric capacitor formed above a semiconductor substrate, a first hydrogen barrier film formed on an upper surface of the ferroelectric capacitor to work as a mask in the formation of the ferroelectric capacitor, a second hydrogen barrier film formed on the upper surface and a side face of the ferroelectric capacitor including on the first hydrogen barrier film, and a contact plug disposed through the first and second hydrogen barrier films, and connected to an upper electrode of the ferroelectric capacitor, a side face thereof being surrounded with the hydrogen barrier films.
摘要翻译：一种半导体存储器件，其防止氢或水分从其包括接触插塞部分的周围区域渗入铁电电容器，包括形成在半导体衬底上的强电介质电容器，形成在铁电体的上表面上的第一氢阻挡膜电容器在形成铁电电容器时用作掩模，在上表面上形成的第二氢阻挡膜和包括在第一氢阻挡膜上的强电介质电容器的侧面，以及通过第一和第二氢阻挡膜，并连接到铁电电容器的上电极，其侧面被氢阻挡膜包围。

5. 发明授权

US07095068B2 Semiconductor memory device having ferroelectric capacitor and method of manufacturing the same 有权
标题翻译：具有铁电电容器的半导体存储器件及其制造方法
公开(公告)号：US07095068B2
公开(公告)日：2006-08-22
申请号：US10455376
申请日：2003-06-06
申请人： Yoshinori Kumura , Iwao Kunishima , Tohru Ozaki , Hiroyuki Kanaya , Shinichi Watanabe
发明人： Yoshinori Kumura , Iwao Kunishima , Tohru Ozaki , Hiroyuki Kanaya , Shinichi Watanabe
IPC分类号： H01L29/76 , H01L27/108
CPC分类号： H01L27/11502 , H01L27/11507
摘要： A semiconductor memory device includes a semiconductor substrate, a first transistor formed on the semiconductor substrate and including a first gate electrode and first and second diffusion layers, a first contact connected to the first diffusion layer, a first conductive oxygen barrier film electrically connected to the first contact and covering at least the upper surface of the first contact, a first ferroelectric capacitor including a first electrode, a second electrode, and a first ferroelectric film interposed between the first and second electrodes, and a first connecting member connected to the first electrode and to the first conductive oxygen barrier film.
摘要翻译：半导体存储器件包括半导体衬底，形成在半导体衬底上的第一晶体管，包括第一栅电极和第一和第二扩散层，与第一扩散层连接的第一触点，与第一导电氧阻隔膜电连接的第一导电氧阻隔膜首先接触并且至少覆盖第一接触件的上表面;第一铁电电容器，包括插入在第一和第二电极之间的第一电极，第二电极和第一铁电体膜;以及连接到第一电极的第一连接构件和第一导电氧阻隔膜。

6. 发明申请

US20060180894A1 Semiconductor memory device and its manufacturing method 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20060180894A1
公开(公告)日：2006-08-17
申请号：US11142441
申请日：2005-06-02
申请人： Yoshinori Kumura , Iwao Kunishima , Hiroyuki Kanaya , Tohru Ozaki , Kazuhiro Tomioka
发明人： Yoshinori Kumura , Iwao Kunishima , Hiroyuki Kanaya , Tohru Ozaki , Kazuhiro Tomioka
IPC分类号： H01L29/00
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57 , H01L28/65
摘要： A semiconductor memory device, which prevents the penetration of hydrogen or moisture to a ferroelectric capacitor from its surrounding area including a contact plug portion, comprises a ferroelectric capacitor formed above a semiconductor substrate, a first hydrogen barrier film formed on an upper surface of the ferroelectric capacitor to work as a mask in the formation of the ferroelectric capacitor, a second hydrogen barrier film formed on the upper surface and a side face of the ferroelectric capacitor including on the first hydrogen barrier film, and a contact plug disposed through the first and second hydrogen barrier films, and connected to an upper electrode of the ferroelectric capacitor, a side face thereof being surrounded with the hydrogen barrier films.
摘要翻译：一种半导体存储器件，其防止氢或水分从其包括接触插塞部分的周围区域渗入铁电电容器，包括形成在半导体衬底上的强电介质电容器，形成在铁电体的上表面上的第一氢阻挡膜电容器在形成铁电电容器时用作掩模，在上表面上形成的第二氢阻挡膜和包括在第一氢阻挡膜上的强电介质电容器的侧面，以及通过第一和第二氢阻挡膜，并连接到铁电电容器的上电极，其侧面被氢阻挡膜包围。

7. 发明授权

US06972990B2 Ferro-electric memory device and method of manufacturing the same 失效
标题翻译：铁电记忆装置及其制造方法
公开(公告)号：US06972990B2
公开(公告)日：2005-12-06
申请号：US10858441
申请日：2004-06-02
申请人： Yoshinori Kumura , Tohru Ozaki , Hiroyuki Kanaya , Iwao Kunishima , Yoshiro Shimojo
发明人： Yoshinori Kumura , Tohru Ozaki , Hiroyuki Kanaya , Iwao Kunishima , Yoshiro Shimojo
IPC分类号： H01L27/10 , G11C11/14 , G11C11/22 , H01L21/8246 , H01L27/105
CPC分类号： G11C11/22 , H01L27/105 , H01L27/11502 , H01L27/11507 , H01L27/11509 , H01L28/57
摘要： A ferro-electric memory device includes a gate electrode which is formed on a semiconductor substrate, first and second diffusion layers which are formed in the semiconductor substrate, a first contact which is electrically connected to the first diffusion layer, a first oxygen barrier film having insulating properties, which is formed on the first contact, a second contact which is electrically connected to the first contact, a second oxygen barrier film having insulating properties, which is formed on the second contact, a ferro-electric capacitor which has a lower electrode, a ferro-electric film, and an upper electrode, a third contact which is electrically connected to the upper electrode, a first interconnection which is electrically connected to the second and third contacts, and a third oxygen barrier film having insulating properties, which is arranged between the ferro-electric capacitor and the second contact and brought into contact with the first oxygen barrier film.
摘要翻译：铁电存储器件包括形成在半导体衬底上的栅电极，形成在半导体衬底中的第一和第二扩散层，与第一扩散层电连接的第一触点，具有第一氧阻隔膜，绝缘性能，其形成在第一接触件上，与第一接触件电连接的第二接触件，形成在第二接触件上的具有绝缘性能的第二氧阻隔膜，具有下电极的铁电电容器铁电膜和上电极，与上电极电连接的第三触点，与第二触头和第三触头电连接的第一互连件，以及具有绝缘性能的第三隔氧膜，其为布置在铁电电容器和第二触点之间并与第一氧阻隔膜接触。

8. 发明申请

US20050207202A1 FERRO-ELECTRIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：电动记忆体装置及其制造方法
公开(公告)号：US20050207202A1
公开(公告)日：2005-09-22
申请号：US10858441
申请日：2004-06-02
申请人： Yoshinori Kumura , Tohru Ozaki , Hiroyuki Kanaya , Iwao Kunishima , Yoshiro Shimojo
发明人： Yoshinori Kumura , Tohru Ozaki , Hiroyuki Kanaya , Iwao Kunishima , Yoshiro Shimojo
IPC分类号： H01L27/10 , G11C11/14 , G11C11/22 , H01L21/8246 , H01L27/105
CPC分类号： G11C11/22 , H01L27/105 , H01L27/11502 , H01L27/11507 , H01L27/11509 , H01L28/57
摘要： A ferro-electric memory device includes a gate electrode which is formed on a semiconductor substrate, first and second diffusion layers which are formed in the semiconductor substrate, a first contact which is electrically connected to the first diffusion layer, a first oxygen barrier film having insulating properties, which is formed on the first contact, a second contact which is electrically connected to the first contact, a second oxygen barrier film having insulating properties, which is formed on the second contact, a ferro-electric capacitor which has a lower electrode, a ferro-electric film, and an upper electrode, a third contact which is electrically connected to the upper electrode, a first interconnection which is electrically connected to the second and third contacts, and a third oxygen barrier film having insulating properties, which is arranged between the ferro-electric capacitor and the second contact and brought into contact with the first oxygen barrier film.
摘要翻译：铁电存储器件包括形成在半导体衬底上的栅电极，形成在半导体衬底中的第一和第二扩散层，与第一扩散层电连接的第一触点，具有第一氧阻隔膜，绝缘性能，其形成在第一接触件上，与第一接触件电连接的第二接触件，形成在第二接触件上的具有绝缘性能的第二氧阻隔膜，具有下电极的铁电电容器铁电膜和上电极，与上电极电连接的第三触点，与第二触头和第三触头电连接的第一互连件，以及具有绝缘性能的第三隔氧膜，其为布置在铁电电容器和第二触点之间并与第一氧阻隔膜接触。

9. 发明授权

US07573084B2 Non-volatile semiconductor memory device and method for fabricating the same 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US07573084B2
公开(公告)日：2009-08-11
申请号：US11898949
申请日：2007-09-18
申请人： Yoshinori Kumura , Tohru Ozaki , Iwao Kunishima
发明人： Yoshinori Kumura , Tohru Ozaki , Iwao Kunishima
IPC分类号： H01L27/108
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57
摘要： According to an aspect of the present invention, there is provided a non-volatile semiconductor memory device, including a ferroelectric capacitor being stacked a first electrode, a ferroelectric film and a second electrode in order, a first protective film with hydrogen barrier performance, the first protective film being formed under the first electrode and on a side-wall of the ferroelectric capacitor, the first protective film being widened from the second electrode towards the first electrode, a second protective film with hydrogen barrier performance, the second protective film being formed over the second electrode and on the first protective film formed on the side-wall of the ferroelectric capacitor, the second protective film being widened from the first electrode towards the second electrode, a cell transistor, a source of the cell transistor being connected to the first electrode, a drain of the cell transistor being connected to a bit line and a gate being connected to a word line.
摘要翻译：根据本发明的一个方面，提供了一种非易失性半导体存储器件，包括堆叠第一电极，铁电体膜和第二电极的铁电电容器，具有氢阻挡性能的第一保护膜，第一保护膜形成在第一电极下方和铁电电容器的侧壁上，第一保护膜从第二电极朝向第一电极加宽，具有氢阻挡性能的第二保护膜，形成第二保护膜在第二电极上以及形成在铁电电容器的侧壁上的第一保护膜上，第二保护膜从第一电极朝向第二电极加宽，单元晶体管，单元晶体管的源极连接到第一电极，单元晶体管的漏极连接到位线，栅极连接到aw ord行。

10. 发明申请

US20090095993A1 SEMICONDUCTOR MEMORY DEVICE AND FABRICATING METHOD FOR SEMICONDUCTOR MEMORY DEVICE 审中-公开
标题翻译：半导体存储器件的半导体存储器件和制造方法
公开(公告)号：US20090095993A1
公开(公告)日：2009-04-16
申请号：US12244210
申请日：2008-10-02
申请人： Tohru Ozaki , Yoshinori Kumura
发明人： Tohru Ozaki , Yoshinori Kumura
IPC分类号： H01L27/115 , H01L21/8246
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57
摘要： According to an aspect of the present invention, there is provided a semiconductor memory device including a ferroelectric capacitor, including a semiconductor substrate, a transistor having diffusion layers being a source and a drain, the transistor being formed on a surface of the semiconductor substrate, a ferroelectric capacitor being formed over the transistor, the ferroelectric capacitor including a lower electrode, a ferroelectric film and an upper electrode stacked in order, an interlayer insulator separating between the transistor and the ferroelectric capacitor, a first contact plug being embedded in the interlayer insulator formed beneath the ferroelectric capacitor, the first contact plug directly connecting between one of the diffusion layers and the lower electrode, a first hydrogen barrier film covering the transistor a second hydrogen barrier film, a portion of the second hydrogen barrier film being formed on the first hydrogen barrier film, another portion of the second hydrogen barrier film covering at least the ferroelectric capacitor, and a second contact plug being embedded in the interlayer insulator, the second hydrogen barrier film and the first hydrogen barrier film, one end of the second contact plug connecting to the other of the diffusion layers.
摘要翻译：根据本发明的一个方面，提供了一种包括具有半导体衬底的铁电电容器，具有源极和漏极的扩散层的晶体管的半导体存储器件，晶体管形成在半导体衬底的表面上，形成在晶体管上的强电介质电容器，所述强电介质电容器包括下电极，强电介质膜和依次堆叠的上电极，分隔在所述晶体管和所述铁电电容器之间的层间绝缘体，第一接触插塞嵌入所述层间绝缘体形成在强电介质电容器下方的第一接触插塞，直接连接在一个扩散层和下电极之间的第一接触插塞，第一氢阻挡膜，覆盖晶体管第二氢阻挡膜，第二氢阻挡膜的一部分形成在第一氢屏障膜，另一部分的secon d氢屏障膜，其至少覆盖所述铁电电容器，以及第二接触插塞，其被嵌入在所述层间绝缘体中，所述第二氢阻挡膜和所述第一氢阻挡膜，所述第二接触插塞的一端连接到所述扩散层中的另一个。

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