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1. 发明申请

US20120132368A1 PLASMA TREATMENT APPARATUS 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20120132368A1
公开(公告)日：2012-05-31
申请号：US13292137
申请日：2011-11-09
申请人： Hiroyuki KOBAYASHI , Takumi TANDOU , Shoichi NAKASHIMA , Naoshi ITABASHI
发明人： Hiroyuki KOBAYASHI , Takumi TANDOU , Shoichi NAKASHIMA , Naoshi ITABASHI
IPC分类号： H01L21/3065 , B01J19/08 , C23C16/50
CPC分类号： C23C16/517 , H01J37/32073 , H01J37/32082
摘要： To improve durability of an electric discharge part of a dielectric barrier discharge system, a plasma treatment apparatus is configured so that a plasma source of a corona discharge system is installed in the vicinity of a plasma source of the dielectric barrier discharge system, a plasma generated by corona discharge is used as an auxiliary plasma, and a discharge sustaining voltage of a main plasma generated by the dielectric barrier discharge is reduced.
摘要翻译：为了提高电介质阻挡放电系统的放电部分的耐久性，等离子体处理装置被配置为使电晕放电系统的等离子体源安装在电介质阻挡放电系统的等离子体源附近，产生等离子体通过电晕放电用作辅助等离子体，并且通过电介质阻挡放电产生的主等离子体的放电维持电压降低。

2. 发明申请

US20120263628A1 Plasma Sterilization Apparatus 有权
标题翻译：等离子灭菌装置
公开(公告)号：US20120263628A1
公开(公告)日：2012-10-18
申请号：US13441026
申请日：2012-04-06
申请人： Takumi TANDOU , Nobuyuki Negishi , Hiroyuki Kobayashi , Keizo Suzuki
发明人： Takumi TANDOU , Nobuyuki Negishi , Hiroyuki Kobayashi , Keizo Suzuki
IPC分类号： A61L9/015
CPC分类号： A61L2/14 , H05H1/2406 , H05H2001/2425
摘要： In order to provide a plasma sterilization apparatus with high plasma generation efficiency, the apparatus includes first and second electrodes (3, 2), a first dielectric body layer (1), and an insulating spacer (6). The first dielectric body layer (1) is disposed between the first and second electrodes (3, 2). The insulating spacer (6) is disposed between the first electrode (3) and the first dielectric body layer (1). The insulating spacer (6) has a lower permittivity than a permittivity of the first dielectric body layer (1).
摘要翻译：为了提供具有高等离子体产生效率的等离子体灭菌装置，该装置包括第一和第二电极（3,2），第一介电体层（1）和绝缘间隔物（6）。第一介电体层（1）设置在第一和第二电极（3,2）之间。绝缘间隔物（6）设置在第一电极（3）和第一介电体层（1）之间。绝缘间隔物（6）的介电常数比第一绝缘体层（1）的介电常数低。

3. 发明申请

US20100193130A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20100193130A1
公开(公告)日：2010-08-05
申请号：US12393272
申请日：2009-02-26
申请人： Masatoshi KAWAKAMI , Tooru ARAMAKI , Shigeru SHIRAYONE , Kenetsu YOKOGAWA , Takumi TANDOU
发明人： Masatoshi KAWAKAMI , Tooru ARAMAKI , Shigeru SHIRAYONE , Kenetsu YOKOGAWA , Takumi TANDOU
IPC分类号： H01L21/306
CPC分类号： H01L21/67109 , H01L21/6831
摘要： In a plasma processing apparatus including a vacuum chamber, a sample table for mounting a member to be processed thereon, the sample table having a coolant path to control a temperature of the member to be processed, an electrostatic chuck power supply for electrostatically adsorbing the member to be processed on the sample table, and a plurality of gas hole parts provided in the sample table to supply heat transfer gas between the member to be processed and the sample table and thereby control a temperature of the member to be processed, each of the gas hole parts includes a boss formed of a dielectric, a sleeve, and a plurality of small tubes, and the small tubes are arranged in a range of 10 to 50% of a radius when measured from a center of the gas hole part toward outside.
摘要翻译：在包括真空室的等离子体处理装置中，用于安装待处理部件的样品台，具有用于控制待处理部件的温度的冷却剂通道的样品台，用于静电吸附该部件的静电卡盘电源在样品台上加工的多个气孔部分和设置在样品台中的多个气孔部分，以在待处理部件和样品台之间提供传热气体，从而控制待处理部件的温度，气孔部分包括由电介质，套管和多个小管形成的凸起，并且当从气孔部分的中心朝向外部测量时，小管被布置在半径的10至50％的范围内。

4. 发明申请

US20110132541A1 VACUUM PROCESSING APPARATUS AND PLASMA PROCESSING APPARATUS WITH TEMPERATURE CONTROL FUNCTION FOR WAFER STAGE 有权
标题翻译：具有温度控制功能的真空加工设备和等离子体加工设备
公开(公告)号：US20110132541A1
公开(公告)日：2011-06-09
申请号：US12696552
申请日：2010-01-29
申请人： Takumi TANDOU , Masaru Izawa
发明人： Takumi TANDOU , Masaru Izawa
IPC分类号： H01L21/465
CPC分类号： H01L21/67109 , H01L21/67017
摘要： A wafer stage includes a first evaporator where a refrigerant circulates. The first evaporator makes up a cooling cycle with a compressor, first condenser, expansion valve, second evaporator, refrigerant thermometer, and refrigerant flowmeter. The first condenser is supplied with a heat exchange medium. The temperature of a coolant supplied to the second evaporator is measured by an inlet refrigerant thermometer and outlet refrigerant thermometer, while the flow rate of the coolant is monitored and adjusted by a flow-rate adjuster. The temperature difference in the coolant between being at the inlet and at the outlet and flow rate can be measured. Upon complete evaporation of the refrigerant in the second evaporator, the dryness of the refrigerant discharged from the wafer stage is calculated from the amount of heat absorbed from (exchanged with) the coolant, the circulation amount of the refrigerant and the refrigerant temperature to control the rotational speed of the compressor.
摘要翻译：晶片台包括制冷剂循环的第一蒸发器。第一蒸发器与压缩机，第一冷凝器，膨胀阀，第二蒸发器，制冷剂温度计和制冷剂流量计构成冷却循环。第一冷凝器配有热交换介质。通过入口制冷剂温度计和出口制冷剂温度计测量供应到第二蒸发器的冷却剂的温度，同时通过流速调节器监测和调节冷却剂的流量。可以测量在入口和出口处的冷却剂的温度差和流量。在第二蒸发器中制冷剂完全蒸发时，从冷却剂的吸收热量，制冷剂的循环量和制冷剂的温度来计算从晶片台排出的制冷剂的干度，以控制压缩机的转速。

5. 发明申请

US20100326094A1 PLASMA PROCESSING APPARATUS AND MAINTENANCE METHOD THEREFOR 有权
标题翻译：等离子体加工设备及其维护方法
公开(公告)号：US20100326094A1
公开(公告)日：2010-12-30
申请号：US12538986
申请日：2009-08-11
申请人： Takumi TANDOU , Masaru Izawa
发明人： Takumi TANDOU , Masaru Izawa
IPC分类号： F25B45/00 , H01L21/3065 , F25B19/00
CPC分类号： H01J37/32091 , F25B45/00 , F25B2500/06 , H01J2237/2001
摘要： In a plasma processing apparatus, a check valve is installed close to a refrigerant inlet of a compressor. When performing maintenance of a sample stage, refrigerant collected from a refrigerant flow path is temporarily stored in a flow path section extending from an expansion valve to the check valve, making it possible to perform the maintenance without changing the amount of refrigerant in the refrigerating cycle. With a refrigerant storage tank, a refrigerant supply valve, and a refrigerant discharge valve included in the refrigerating cycle, when maintenance of the compressor, a condenser, or the expansion valve is performed, the refrigerant collected from the refrigerating cycle can be put in use again.
摘要翻译：在等离子体处理装置中，止回阀安装在压缩机的制冷剂入口附近。在对样品台进行维护时，从制冷剂流路收集的制冷剂暂时存储在从膨胀阀向止回阀延伸的流路部中，能够不改变制冷循环中的制冷剂量而进行维护。在冷冻循环中包括的制冷剂储存箱，制冷剂供给阀和制冷剂排出阀中，当执行压缩机，冷凝器或膨胀阀的维护时，可以使用从制冷循环中收集的制冷剂再次。

6. 发明申请

US20110207243A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20110207243A1
公开(公告)日：2011-08-25
申请号：US13091770
申请日：2011-04-21
申请人： Takumi TANDOU , Kenetsu Yokogawa , Masaru Izawa
发明人： Takumi TANDOU , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01L21/02 , C23F1/08 , H01L21/00
CPC分类号： F25B39/02 , F28F2210/02 , H01J2237/2001 , H01L21/67109
摘要： There is provided a means for uniformly controlling the in-plane temperature of a semiconductor wafer at high speed in a high heat input etching process. A refrigerant channel structure in a circular shape is formed in a sample stage. Due to a fact that a heat transfer coefficient of a refrigerant is largely changed from a refrigerant supply port to a refrigerant outlet port, the cross sections of the channel structure is structured so as to be increased from a first channel areas towards a second channel areas in order to make the heat transfer coefficient of the refrigerant constant in the refrigerant channel structure. Thereby, the heat transfer coefficient of the refrigerant is prevented from increasing by reducing the flow rate of the refrigerant at a dry degree area where the heat transfer coefficient of the refrigerant is increased. Further, the cross section of the channel structure is structured so as to be reduced from the second channel areas towards a third channel areas, and thereby the heat transfer coefficient of the refrigerant is prevented from decreasing. Accordingly, the heat transfer coefficient of the refrigerant can be uniformed in the channel structure.
摘要翻译：提供了一种用于在高热输入蚀刻工艺中高速均匀地控制半导体晶片的面内温度的装置。在样品台中形成圆形的制冷剂流路结构。由于制冷剂的传热系数从制冷剂供给口向制冷剂排出口发生很大的变化，所以，通道结构的横截面被构造成从第一通道区域向第二通道区域以使制冷剂流路结构中的制冷剂的传热系数恒定。因此，通过降低制冷剂的传热系数增加的干燥区域的制冷剂的流量，可以防止制冷剂的传热系数增加。此外，通道结构的横截面被构造成从第二通道区域朝向第三通道区域减小，从而防止制冷剂的传热系数降低。因此，制冷剂的传热系数可以在通道结构中均匀化。

7. 发明申请

US20100126666A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20100126666A1
公开(公告)日：2010-05-27
申请号：US12368412
申请日：2009-02-10
申请人： Takumi TANDOU , Kenetsu Yokogawa , Masaru Izawa
发明人： Takumi TANDOU , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01L21/3065
CPC分类号： H01L21/67248 , H01J37/32522 , H01J2237/2001 , H01L21/67109
摘要： In a plasma processing apparatus; a refrigerant flow passage being formed in the sample table and constituting an evaporator of a cooling cycle and the in-plane temperature of the sample to be processed is controlled uniformly by controlling the enthalpy of the refrigerant supplied to the refrigerant flow passage and thereby keeping the flow mode in the refrigerant flow passage, namely in the sample table, in the state of a gas-liquid two-phase. If by any chance dry out of the refrigerant occurs in the refrigerant flow passage because the heat input of plasma increases with time or by another reason, it is possible to increase speed of a compressor and inhibit the dry out from occurring in the refrigerant flow passage. Further, if the refrigerant supplied to the refrigerant flow passage is liquefied, it is kept in the gas-liquid two-phase state.
摘要翻译：在等离子体处理装置中; 形成在样品台中并构成冷却循环的蒸发器的制冷剂流动通道，并且通过控制供给制冷剂流动通道的制冷剂的焓来均匀地控制待加工样品的面内温度，从而保持在气液两相状态下的制冷剂流路中，即样品台中的流动模式。如果由于等离子体的热输入随着时间的推移或由于其他原因而在制冷剂流通道中发生制冷剂的任何干扰，则可以提高压缩机的速度并且抑制在制冷剂流动通道中发生的干燥。此外，如果供给到制冷剂流路的制冷剂液化，则保持在气液两相状态。

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