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1. 发明授权

US06640775B2 Air-fuel ratio control system for internal combustion engine 失效
公开(公告)号：US06640775B2
公开(公告)日：2003-11-04
申请号：US10042212
申请日：2002-01-11
申请人： Hiroyuki Itoyama , Hiroshi Iwano , Kensuke Osamura , Kenji Oota
发明人： Hiroyuki Itoyama , Hiroshi Iwano , Kensuke Osamura , Kenji Oota
IPC分类号： F02D4100
CPC分类号： F02D41/1497 , F02D21/08 , F02D35/0007 , F02D41/005 , F02D41/0072 , F02D2041/0017 , F02D2041/1418 , F02D2041/389 , F02D2200/0402 , F02D2200/0406 , F02D2200/0408 , F02D2200/1004 , F02D2200/703 , F02D2250/18 , F02M26/05 , F02M26/10 , Y02T10/47
摘要： An air-fuel ratio control system for an internal combustion engine is comprised of an engine condition detecting unit and a control unit. The control unit is arranged to calculate a target engine torque on the basis of an engine operating condition, to calculate a target EGR ratio, a target excess air ratio and a target intake air quantity on the basis of the engine operating condition and the target engine torque, to calculate a target equivalence ratio on the basis of the target EGR ratio and the target excess air ratio, to calculate a target injection quantity on the basis of the engine operating condition and the target equivalence ratio, and to control an air-fuel ratio by bringing a real intake air quantity to the target intake air quantity and by bringing a real fuel injection quantity to the target fuel injection quantity.

2. 发明授权

US06705303B2 Air-fuel ratio control apparatus and method for internal combustion engine 有权
标题翻译：用于内燃机的空燃比控制装置和方法
公开(公告)号：US06705303B2
公开(公告)日：2004-03-16
申请号：US10093914
申请日：2002-03-11
申请人： Hiroyuki Itoyama , Hiroshi Iwano , Kensuke Osamura , Kenji Oota
发明人： Hiroyuki Itoyama , Hiroshi Iwano , Kensuke Osamura , Kenji Oota
IPC分类号： F02M2507
CPC分类号： F02D41/0275 , F01N3/0842 , F02B29/0406 , F02D21/08 , F02D23/00 , F02D41/005 , F02D41/0052 , F02M26/05 , F02M26/10 , F02M26/47 , Y02T10/144 , Y02T10/47
摘要： In air-fuel ratio control apparatus and method for an internal combustion engine having an EGR valve interposed in an EGR passage between an intake manifold and an exhaust manifold, a target EGR quantity is calculated, a determination is made which of air-fuel ratio feedback controls through an EGR control and through an intake-air quantity is to be executed according to the target EGR quantity, and one of the air-fuel ratio feedback controls is selectively made according to a result of a determination of which of the air-fuel feedback controls is to be executed. During an execution of a rich spike control, the feedback control through the intake-air quantity control is unconditionally executed.
摘要翻译：在具有插入在进气歧管和排气歧管之间的EGR通路中的EGR阀的内燃机的空燃比控制装置和方法中，计算目标EGR量，确定空燃比反馈根据目标EGR量执行通过EGR控制和通过进气量的控制，并且根据确定哪个空气燃料的结果选择性地进行空燃比反馈控制之一反馈控制将被执行。在执行丰富的尖峰控制期间，无条件地执行通过进气量控制的反馈控制。

3. 发明授权

US06701244B2 Excess air factor control device for internal combustion engine 有权
标题翻译：用于内燃机的过量空调系统控制装置
公开(公告)号：US06701244B2
公开(公告)日：2004-03-02
申请号：US09989118
申请日：2001-11-21
申请人： Kenji Oota , Hiroyuki Itoyama , Hiroshi Iwano , Kensuke Osamura , Takeshi Ishino
发明人： Kenji Oota , Hiroyuki Itoyama , Hiroshi Iwano , Kensuke Osamura , Takeshi Ishino
IPC分类号： F02D4114
CPC分类号： F02D43/00 , F01N3/0842 , F02B29/0406 , F02B37/24 , F02D21/08 , F02D41/0007 , F02D41/0072 , F02D41/0275 , F02D41/1454 , F02D41/146 , F02D41/1461 , F02D41/18 , F02D2041/0017 , F02D2041/1432 , F02D2200/0402 , F02D2250/21 , F02M26/05 , Y02T10/144 , Y02T10/47 , Y10T477/68
摘要： A basic target excess air factor tLAMBDA0 and a target fresh air intake amount tQac are set base upon the operation condition of an engine (30). A target excess air factor tLAMBDA is calculated by multiplying the ratio of a real fresh air intake amount rQac as detected by a sensor (16) and the target fresh air intake amount tQac by the basic target excess air factor tLAMBDA0. A fuel injector (9) is controlled so that the amount of fuel injected thereby converges to a target fuel injection amount tQf which corresponds to the target excess air factor tLAMBDA. It is possible to prevent variation of the output torque of the engine (30) accompanying a rich spike by this control, even if the basic target excess air factor tLAMBDA0 varies abruptly, since the fuel injection amount varies in correspondence to the variation of the real fresh air intake amount rQac.
摘要翻译：基于发动机（30）的运转状态设定基本目标多余空气因子tLAMBDA0和目标新鲜空气吸入量tQac。通过将由传感器（16）检测到的实际新鲜空气吸入量rQac与目标空气吸入量tQac的比乘以基本目标多余空气因子tLAMBDA0来计算目标多余空气因子tLAMBDA。控制燃料喷射器（9），使得喷射的燃料量因此收敛到对应于目标多余空气系数tLAMBDA的目标燃料喷射量tQf。即使基本目标过剩空气因子tLAMBDA0突然变化，也可以防止由该控制引起的伴随着丰富尖峰的发动机（30）的输出转矩的变化，因为燃料喷射量根据实际的变化而变化新鲜进气量rQac。

4. 发明授权

US06687598B2 Method and system for controlling an engine with enhanced torque control 有权
标题翻译：用于控制具有增强的扭矩控制的发动机的方法和系统
公开(公告)号：US06687598B2
公开(公告)日：2004-02-03
申请号：US10107490
申请日：2002-03-28
申请人： Kenji Oota , Hiroshi Iwano , Hiroyuki Itoyama , Takeshi Ishino , Kensuke Osamura
发明人： Kenji Oota , Hiroshi Iwano , Hiroyuki Itoyama , Takeshi Ishino , Kensuke Osamura
IPC分类号： F02D3302
CPC分类号： F02D41/0002 , F02D35/0023 , F02D41/005 , F02D41/0072 , F02D41/1458 , F02D41/1497 , F02D41/263 , F02D2200/0402 , F02D2200/0614 , F02D2200/1004 , F02D2250/18 , Y02T10/42 , Y02T10/47
摘要： A method for controlling an engine comprises establishing a torque correction coefficient (KA) to compensate for reducing effect of available engine torque in operating range of different excess air ratios (&lgr;) that are lower than a predetermined value (unity=1). An initial base desired in-cylinder air mass (tQacb) is determined based on a requested engine torque (tTe). A desired excess air ratio (t&lgr;) is determined. The initial base desired in-cylinder air mass (tQacb) is adjusted with at least the desired excess air ratio (t&lgr;) and the correction coefficient (KA) to generate a desired in-cylinder air mass (tQac). A desired injected fuel mass (tQf) is controlled based on the desired in-cylinder air mass (tQac) to deliver the requested engine torque (tTe) with the desired excess air ratio (t&lgr;) held accomplished.
摘要翻译：用于控制发动机的方法包括建立扭矩校正系数（KA），以补偿在低于预定值（unity = 1）的不同过量空气比（λ）的操作范围内可用的发动机转矩的减小效果。基于要求的发动机扭矩（tTe）确定期望的缸内空气质量（tQacb）的初始底座。确定所需的过量空气比（tlambda）。用至少所需的过量空气比（tlambda）和校正系数（KA）来调节所需的缸内空气质量（tQacb）的初始底部以产生所需的缸内空气质量（tQac）。基于期望的缸内空气质量（tQac）来控制期望的喷射燃料质量（tQf），以便以所保持的期望的过量空气比（tlambda）递送所要求的发动机扭矩（t Te）。

5. 发明授权

US07100547B2 Intake-air control system for engine 有权
标题翻译：发动机进气控制系统
公开(公告)号：US07100547B2
公开(公告)日：2006-09-05
申请号：US10715371
申请日：2003-11-19
申请人： Kensuke Osamura , Hiroshi Iwano , Kenji Oota
发明人： Kensuke Osamura , Hiroshi Iwano , Kenji Oota
IPC分类号： F02B75/04
CPC分类号： F02B75/048 , F02D11/10 , F02D13/0253 , F02D15/02 , F02D41/0002 , F02D2041/001 , Y02T10/18 , Y02T10/42
摘要： An intake-air control system for an engine enabling an intake-air quantity and a compression ratio to be variably controlled, includes sensors detecting engine operating conditions and the compression ratio, and a control unit electronically connected to the sensors for feedback-controlling the intake-air quantity based on the compression ratio as well as the engine operating conditions, while feedback-controlling the compression ratio based on the engine operating conditions. The control unit executes phase-matching between an intake-air quantity change occurring based on intake-air quantity control and a compression ratio change occurring based on compression ratio control, considering a relatively slower response in the compression ratio change than a response in the intake-air quantity change.
摘要翻译：能够使进气量和压缩比可变地控制的用于发动机的进气控制系统包括检测发动机工作条件和压缩比的传感器，以及电连接到传感器的控制单元，用于反馈控制进气口基于压缩比和发动机工作条件的空气量，同时基于发动机工作条件反馈控制压缩比。考虑到在压缩比变化中的反应相对较慢，在进气压力比的变化中，控制单元执行基于进气量控制而发生的进气量变化和基于压缩比控制的压缩比变化之间的相位匹配 - 空气量变化。

6. 发明申请

US20090286054A1 Decorative Sheet 审中-公开
标题翻译：装饰板
公开(公告)号：US20090286054A1
公开(公告)日：2009-11-19
申请号：US12440760
申请日：2007-09-26
申请人： Yoshiyuki Meiki , Hiroyuki Atake , Kenji Oota
发明人： Yoshiyuki Meiki , Hiroyuki Atake , Kenji Oota
IPC分类号： B32B3/10
CPC分类号： B29C45/14827 , B32B7/12 , B32B15/09 , B32B15/20 , B32B27/08 , B32B27/20 , B32B27/36 , B32B2255/10 , B32B2255/26 , B32B2255/28 , B32B2264/025 , B32B2264/10 , B32B2264/102 , B32B2264/104 , B32B2307/4026 , B32B2307/414 , B32B2307/422 , B32B2307/51 , B32B2307/518 , B32B2307/702 , B32B2307/71 , B32B2457/00 , B32B2605/003 , B44C1/1729 , Y10T428/24843
摘要： Provided is a sheet for decoration which is excellent in an impact resistance in molding a surface form having a three-dimensional curved surface having a high deep-drawing degree and which has a good followability toward a molding surface of a metal die and is suited to decorated moldings. The above sheet for decoration comprises a peel layer, a picture layer and a heat adhesive resin layer which are laminated in order on the surface of a base film comprising a polyester film, wherein a dynamic elastic modulus of the above base film is 1.0×106 Pa or more at any temperature falling in a range of 190 to 240° C.
摘要翻译：本发明提供一种装饰用片材，其具有在具有高深拉深度的三维曲面的成型中具有优异的耐冲击性，并且对金属模具的成型面具有良好的追随性，并且适合于装饰造型。上述装饰用片材包括剥离层，图案层和热粘树脂层，其依次层压在包含聚酯膜的基膜的表面上，其中上述基膜的动态弹性模量为1.0×10 6 Pa 或更高的温度落在190-240℃的范围内。

7. 发明授权

US07301178B2 Pressed-contact type semiconductor device 失效
标题翻译：压接式半导体器件
公开(公告)号：US07301178B2
公开(公告)日：2007-11-27
申请号：US11212602
申请日：2005-08-29
申请人： Yoshihiro Yamaguchi , Kenji Oota
发明人： Yoshihiro Yamaguchi , Kenji Oota
IPC分类号： H01L29/74
CPC分类号： H01L29/0661 , H01L24/72 , H01L29/0615 , H01L29/0657 , H01L29/32 , H01L29/74 , H01L2924/0102 , H01L2924/1301 , H01L2924/00
摘要： A P++-type first diffusion layer is formed by diffusing P-type impurities on a front side of an N−-type semiconductor substrate, and an N-type fourth diffusion layer which is shallower than the first diffusion layer is formed by diffusing N-type impurities on the front side, and a P-type second diffusion layer is locally formed in a ring-shape so as to be exposed on the lateral side by diffusing P-type impurities on the back side, and P-type impurities are diffused on the back side of the substrate and a P+-type third diffusion layer is locally formed so as to be distributed inward from the second diffusion layer and not to be exposed to the lateral side, and the P-type second diffusion layer and the P+-type third diffusion layer are formed in the two-stage structure, thereby various characteristics can be improved.
摘要翻译： AP ++类型的第一扩散层是通过在N +型半导体衬底的正面扩散P型杂质形成的，N型第四扩散层通过在前侧扩散N型杂质而形成比第一扩散层浅的层，并且P型第二扩散层局部形成为环状，以便通过扩散P而暴露在侧面型杂质，P型杂质扩散到基板的背面，局部地形成P +型第三扩散层，以从第二层向内分布扩散层并且不暴露于侧面，并且P型第二扩散层和P + +型第三扩散层形成在两级结构中，因此可以有各种特性改进。

8. 发明授权

US07837918B2 Method of forming a coating layer on the surface of a molded product within a mold 失效
标题翻译：在模具内的模制品的表面上形成涂层的方法
公开(公告)号：US07837918B2
公开(公告)日：2010-11-23
申请号：US12285441
申请日：2008-10-06
申请人： Kenji Yonemochi , Yoshiaki Yamamoto , Kenji Oota , Toshio Arai , Etsuo Okahara , Kazuaki Kobayashi
发明人： Kenji Yonemochi , Yoshiaki Yamamoto , Kenji Oota , Toshio Arai , Etsuo Okahara , Kazuaki Kobayashi
IPC分类号： B29C33/10
CPC分类号： B29C45/2669 , B29C37/0028 , B29C45/0025 , B29C45/1679 , B29C45/661 , B29C45/681 , B29C45/73 , B29C45/7653 , B29C2045/1687 , B29C2945/76006 , B29C2945/76287 , B29C2945/76943 , B29K2101/10 , B29K2101/12
摘要： An in-mold coating method providing a mold having a specifically formed auxiliary cavity and an in-mold coating formation method which employs said mold, so that it is possible to prevent a coating material from leaking out of the mold, thereby shortening the molding formation cycle, and making it possible to manufacture a molded product having a stabilized quality. In addition, by using a mold having a specifically shaped sub-cavity, there is provided a still further in-mold coating formation method which can keep mold temperature at a relatively low value, cause the coating material to cure at a predetermined temperature and within a predetermined time period thereby shortening the molding formation cycle, improving the productivity, improving the physical properties of a coating layer, thus obtaining a good molded product.
摘要翻译：提供具有特定形成的辅助空腔的模具和采用所述模具的模内涂层形成方法的模内涂布方法，使得可以防止涂料从模具中泄漏出来，从而缩短模制形成循环，并且可以制造具有稳定质量的模制产品。此外，通过使用具有特定形状的子腔的模具，还提供了另外的模内涂层形成方法，其可以将模具温度保持在较低的值，使涂层材料在预定温度和内部固化从而缩短成型周期，提高生产率，提高涂层的物理性能，从而获得良好的模制品。

9. 发明申请

US20060043413A1 Pressed-contact type semiconductor device 失效
公开(公告)号：US20060043413A1
公开(公告)日：2006-03-02
申请号：US11212602
申请日：2005-08-29
申请人： Yoshihiro Yamaguchi , Kenji Oota
发明人： Yoshihiro Yamaguchi , Kenji Oota
IPC分类号： H01L29/74
CPC分类号： H01L29/0661 , H01L24/72 , H01L29/0615 , H01L29/0657 , H01L29/32 , H01L29/74 , H01L2924/0102 , H01L2924/1301 , H01L2924/00
摘要： A P++-type first diffusion layer is formed by diffusing P-type impurities on a front side of an N−-type semiconductor substrate, and an N-type fourth diffusion layer which is shallower than the first diffusion layer is formed by diffusing N-type impurities on the front side, and a P-type second diffusion layer is locally formed in a ring-shape so as to be exposed on the lateral side by diffusing P-type impurities on the back side, and P-type impurities are diffused on the back side of the substrate and a P+-type third diffusion layer is locally formed so as to be distributed inward from the second diffusion layer and not to be exposed to the lateral side, and the P-type second diffusion layer and the P+-type third diffusion layer are formed in the two-stage structure, thereby various characteristics can be improved.

10. 发明授权

US06943382B2 Pressed-contact type semiconductor device 失效
标题翻译：压接式半导体器件
公开(公告)号：US06943382B2
公开(公告)日：2005-09-13
申请号：US10648232
申请日：2003-08-27
申请人： Yoshihiro Yamaguchi , Kenji Oota
发明人： Yoshihiro Yamaguchi , Kenji Oota
IPC分类号： H01L29/744 , H01L21/322 , H01L23/48 , H01L29/06 , H01L29/74
CPC分类号： H01L29/0661 , H01L24/72 , H01L29/0615 , H01L29/0657 , H01L29/32 , H01L29/74 , H01L2924/0102 , H01L2924/1301 , H01L2924/00
摘要： A P++-type first diffusion layer is formed by diffusing P-type impurities on a front side of an N−-type semiconductor substrate, and an N-type fourth diffusion layer which is shallower than the first diffusion layer is formed by diffusing N-type impurities on the front side, and a P-type second diffusion layer is locally formed in a ring-shape so as to be exposed on the lateral side by diffusing P-type impurities on the back side, and P-type impurities are diffused on the back side of the substrate and a P+-type third diffusion layer is locally formed so as to be distributed inward from the second diffusion layer and not to be exposed to the lateral side, and the P-type second diffusion layer and the P+-type third diffusion layer are formed in the two-stage structure, thereby various characteristics can be improved.
摘要翻译： AP ++类型的第一扩散层是通过在N +型半导体衬底的正面扩散P型杂质形成的，N型第四扩散层通过在前侧扩散N型杂质而形成比第一扩散层浅的层，并且P型第二扩散层局部形成为环状，以便通过扩散P而暴露在侧面型杂质，P型杂质扩散到基板的背面，局部地形成P +型第三扩散层，以从第二层向内分布扩散层并且不暴露于侧面，并且P型第二扩散层和P + +型第三扩散层形成在两级结构中，因此可以有各种特性改进。

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