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1. 发明申请

US20080011947A1 Semiconductor substrate, substrate inspection method, semiconductor device manufacturing method, and inspection apparatus 失效
标题翻译：半导体衬底，衬底检查方法，半导体器件制造方法和检查装置
公开(公告)号：US20080011947A1
公开(公告)日：2008-01-17
申请号：US11730818
申请日：2007-04-04
申请人： Hiroyuki Hayashi , Takamitsu Nagai , Tomonobu Noda , Kenichi Kadota , Hisaki Kozaki
发明人： Hiroyuki Hayashi , Takamitsu Nagai , Tomonobu Noda , Kenichi Kadota , Hisaki Kozaki
IPC分类号： G01N23/00 , H01L21/66
CPC分类号： H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor substrate inspection method includes: generating a charged particle beam, and irradiating the charged particle beam to a semiconductor substrate in which contact wiring lines are formed on a surface thereof, the contact wiring lines of the semiconductor substrate being designed to alternately repeat in a plane view so that one of the adjacent contact wiring lines is grounded to the semiconductor substrate and the other of the adjacent contact wiring lines is insulated from the semiconductor substrate; detecting at least one of a secondary charged particle, a reflected charged particle and a back scattering charged particle generated from the surface of the semiconductor substrate to acquire a signal; generating an inspection image with the signal, the inspection image showing a state of the surface of the semiconductor substrate; and judging whether the semiconductor substrate is good or bad from a difference of brightness in the inspection image obtained from the surfaces of the adjacent contact wiring lines.
摘要翻译：半导体衬底检查方法包括：产生带电粒子束，并将带电粒子束照射到其表面上形成有接触布线的半导体衬底，半导体衬底的接触布线被设计成在平面图，使得相邻的接触布线中的一个接地到半导体基板，并且相邻的接触布线中的另一个与半导体基板绝缘; 检测从半导体衬底的表面产生的二次带电粒子，反射带电粒子和反向散射带电粒子中的至少一个，以获得信号; 产生具有信号的检查图像，检查图像显示半导体基板的表面的状态; 以及从相邻接触布线的表面获得的检查图像中的亮度差来判断半导体基板是否良好。

2. 发明申请

US20090272901A1 Semiconductor substrate, substrate inspection method, semiconductor device manufacturing method, and inspection apparatus 失效
公开(公告)号：US20090272901A1
公开(公告)日：2009-11-05
申请号：US12458343
申请日：2009-07-08
申请人： Hiroyuki Hayashi , Takamitsu Nagai , Tomonobu Noda , Kenichi Kadota , Hisaki Kozaki
发明人： Hiroyuki Hayashi , Takamitsu Nagai , Tomonobu Noda , Kenichi Kadota , Hisaki Kozaki
IPC分类号： G01N23/203 , H01L21/66
CPC分类号： H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor substrate inspection method includes: generating a charged particle beam, and irradiating the charged particle beam to a semiconductor substrate in which contact wiring lines are formed on a surface thereof, the contact wiring lines of the semiconductor substrate being designed to alternately repeat in a plane view so that one of the adjacent contact wiring lines is grounded to the semiconductor substrate and the other of the adjacent contact wiring lines is insulated from the semiconductor substrate; detecting at least one of a secondary charged particle, a reflected charged particle and a back scattering charged particle generated from the surface of the semiconductor substrate to acquire a signal; generating an inspection image with the signal, the inspection image showing a state of the surface of the semiconductor substrate; and judging whether the semiconductor substrate is good or bad from a difference of brightness in the inspection image obtained from the surfaces of the adjacent contact wiring lines.

3. 发明授权

US07973281B2 Semiconductor substrate, substrate inspection method, semiconductor device manufacturing method, and inspection apparatus 失效
标题翻译：半导体衬底，衬底检查方法，半导体器件制造方法和检查装置
公开(公告)号：US07973281B2
公开(公告)日：2011-07-05
申请号：US12458343
申请日：2009-07-08
申请人： Hiroyuki Hayashi , Takamitsu Nagai , Tomonobu Noda , Kenichi Kadota , Hisaki Kozaki
发明人： Hiroyuki Hayashi , Takamitsu Nagai , Tomonobu Noda , Kenichi Kadota , Hisaki Kozaki
IPC分类号： G01N23/00
CPC分类号： H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor substrate inspection method includes: generating a charged particle beam, and irradiating the charged particle beam to a semiconductor substrate in which contact wiring lines are formed on a surface thereof, the contact wiring lines of the semiconductor substrate being designed to alternately repeat in a plane view so that one of the adjacent contact wiring lines is grounded to the semiconductor substrate and the other of the adjacent contact wiring lines is insulated from the semiconductor substrate; detecting at least one of a secondary charged particle, a reflected charged particle and a back scattering charged particle generated from the surface of the semiconductor substrate to acquire a signal; generating an inspection image with the signal, the inspection image showing a state of the surface of the semiconductor substrate; and judging whether the semiconductor substrate is good or bad from a difference of brightness in the inspection image obtained from the surfaces of the adjacent contact wiring lines.
摘要翻译：半导体衬底检查方法包括：产生带电粒子束，并将带电粒子束照射到其表面上形成有接触布线的半导体衬底，半导体衬底的接触布线被设计成在平面图，使得相邻的接触布线中的一个接地到半导体基板，并且相邻的接触布线中的另一个与半导体基板绝缘; 检测从半导体衬底的表面产生的二次带电粒子，反射带电粒子和反向散射带电粒子中的至少一个，以获得信号; 产生具有信号的检查图像，检查图像显示半导体基板的表面的状态; 以及从相邻接触布线的表面获得的检查图像中的亮度差来判断半导体基板是否良好。

4. 发明授权

US07573066B2 Semiconductor substrate, substrate inspection method, semiconductor device manufacturing method, and inspection apparatus 失效
标题翻译：半导体衬底，衬底检查方法，半导体器件制造方法和检查装置
公开(公告)号：US07573066B2
公开(公告)日：2009-08-11
申请号：US11730818
申请日：2007-04-04
申请人： Hiroyuki Hayashi , Takamitsu Nagai , Tomonobu Noda , Kenichi Kadota , Hisaki Kozaki
发明人： Hiroyuki Hayashi , Takamitsu Nagai , Tomonobu Noda , Kenichi Kadota , Hisaki Kozaki
IPC分类号： H01L23/58
CPC分类号： H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor substrate inspection method includes: generating a charged particle beam, and irradiating the charged particle beam to a semiconductor substrate in which contact wiring lines are formed on a surface thereof, the contact wiring lines of the semiconductor substrate being designed to alternately repeat in a plane view so that one of the adjacent contact wiring lines is grounded to the semiconductor substrate and the other of the adjacent contact wiring lines is insulated from the semiconductor substrate; detecting at least one of a secondary charged particle, a reflected charged particle and a back scattering charged particle generated from the surface of the semiconductor substrate to acquire a signal; generating an inspection image with the signal, the inspection image showing a state of the surface of the semiconductor substrate; and judging whether the semiconductor substrate is good or bad from a difference of brightness in the inspection image obtained from the surfaces of the adjacent contact wiring lines.
摘要翻译：半导体衬底检查方法包括：产生带电粒子束，并将带电粒子束照射到其表面上形成有接触布线的半导体衬底，半导体衬底的接触布线被设计成在平面图，使得相邻的接触布线中的一个接地到半导体基板，并且相邻的接触布线中的另一个与半导体基板绝缘; 检测从半导体衬底的表面产生的二次带电粒子，反射带电粒子和反向散射带电粒子中的至少一个，以获得信号; 产生具有信号的检查图像，检查图像显示半导体基板的表面的状态; 以及从相邻接触布线的表面获得的检查图像中的亮度差来判断半导体基板是否良好。

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