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    • 9. 发明授权
    • Capacitor and process for manufacturing the same
    • 电容器和制造过程相同
    • US07667257B2
    • 2010-02-23
    • US11585203
    • 2006-10-24
    • Shinpei Iijima
    • Shinpei Iijima
    • H01L27/108
    • H01L27/10894H01L27/10852H01L28/91
    • Method for solving the problem caused when forming a crown-structure capacitor in a trench which is formed in an insulating film, and having difficulty in electrical by connecting a first upper electrode formed on the inside wall of the trench and a second upper electrode which is to be a plate because of the intervention of dielectric between the first and second upper electrodes. The conducting state of the first upper electrode and the plate upper electrode is ensured by utilizing a tantalum oxide film formed on a titanium nitride film, which is brought to a completely conducting state when heat treated. A crown structure is formed without removing the insulating film, in which a trench has been formed, by wet etching, whereby a stacked trench capacitor, which has double the capacity is provided while eliminating the collapse of the lower electrode or pair bit defect.
    • 用于解决在形成在绝缘膜中的沟槽中形成冠状结构电容器时引起的问题的方法,并且难以通过连接形成在沟槽的内壁上的第一上电极和第二上电极 由于第一和第二上部电极之间的电介质的介入而成为板。 通过利用形成在氮化钛膜上的氧化钽膜来确保第一上电极和板上电极的导电状态,当经过热处理时,其形成为完全导通状态。 通过湿式蚀刻,形成不形成沟槽的绝缘膜而形成凸面结构,由此提供具有双倍容量的叠层沟槽式电容器,同时消除了下部电极或对位缺陷的崩溃。