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1. 发明授权

US06383896B1 Thin film forming method and thin film forming apparatus 失效
标题翻译：薄膜形成方法和薄膜形成装置
公开(公告)号：US06383896B1
公开(公告)日：2002-05-07
申请号：US09661809
申请日：2000-09-14
申请人： Hiroya Kirimura , Naoto Kuratani , Kiyoshi Ogata
发明人： Hiroya Kirimura , Naoto Kuratani , Kiyoshi Ogata
IPC分类号： H01L2120
CPC分类号： C23C16/45565 , C23C16/452 , C23C16/509 , C23C16/517 , H01J37/32009 , H01J37/32422
摘要： In a thin film forming method and an apparatus A for implementing the method, a deposition chamber 1 provided with a substrate holder 12 and a radical emitting device 2 continuing to the chamber 1 for emitting neutral radicals uniformly to a whole deposition target region of a deposition target substrate S held by the holder 12 are used. Deposition gas plasma PL1 is formed at the vicinity of the substrate S on the holder 12 by supplying a predetermined deposition gas into the chamber 1. Neutral radicals RA are produced by exciting and dissociating a predetermined radical material gas in the radical emitting device 2, and the radicals are uniformly emitted to the deposition target region of the substrate S for forming a predetermined thin film on the substrate S.
摘要翻译：在用于实现该方法的薄膜形成方法和装置A中，沉积室1设置有基板保持器12和连续到室1的自由基发射装置2，用于均匀地向沉积物的整个沉积靶区域发射中性自由基使用由保持器12保持的目标基板S. 通过将预定的沉积气体供应到室1中，在保持器12上的基板S的附近形成沉积气体等离子体PL1。通过激发和解离自由基发射装置2中的预定自由基原料气体来产生中性自由基RA，以及该基团被均匀地发射到基板S的沉积靶区域，以在衬底S上形成预定的薄膜。

2. 发明授权

US6051120A Thin film forming apparatus 失效
标题翻译：薄膜成型装置
公开(公告)号：US6051120A
公开(公告)日：2000-04-18
申请号：US198584
申请日：1998-11-24
申请人： Shigeaki Kishida , Takashi Mikami , Hiroya Kirimura , Kiyoshi Ogata
发明人： Shigeaki Kishida , Takashi Mikami , Hiroya Kirimura , Kiyoshi Ogata
IPC分类号： C23C14/32 , C23C16/50 , C23C16/505 , H01J37/32 , H01L21/205 , H01L21/31 , C23C14/46
CPC分类号： H01J37/3233
摘要： There is provided a thin film forming apparatus in which plasma of high frequency is made of raw material gas in a film forming chamber 7, a thin film is formed on a surface of a substrate 12 in the film forming chamber 7 by the plasma of high frequency, and a characteristic of the thin film is controlled by irradiating ion beams 4 onto the surface of the substrate 12 at the same time, characterized in that: the substrate 12 is composed of a square plate having a regular square surface or a rectangular surface; and the thin film forming apparatus is provided with a high frequency electrode 13 for forming the plasma of high frequency into a cube or a rectangular parallelepiped to cover an overall surface of the substrate 12, on the surface side of the substrate 12.
摘要翻译：提供了一种薄膜形成装置，其中高成本的等离子体由成膜室7中的原料气体构成，薄膜通过高等离子体在成膜室7中的基板12的表面上形成频率，并且同时通过将离子束4照射到基板12的表面上来控制薄膜的特性，其特征在于：基板12由正方形表面或矩形表面的正方形板 ; 并且薄膜形成装置设置有用于在基板12的表面侧上将高频等离子体形成立方体或长方体以覆盖基板12的整个表面的高频电极13。

3. 发明授权

US06358313B1 Method of manufacturing a crystalline silicon base semiconductor thin film 失效
标题翻译：制造晶体硅基半导体薄膜的方法
公开(公告)号：US06358313B1
公开(公告)日：2002-03-19
申请号：US09469326
申请日：1999-12-22
申请人： Shuhei Tsuchimoto , Hirohisa Tanaka , Kiyoshi Ogata , Hiroya Kirimura
发明人： Shuhei Tsuchimoto , Hirohisa Tanaka , Kiyoshi Ogata , Hiroya Kirimura
IPC分类号： C30B2906
CPC分类号： C30B25/105 , C30B29/06
摘要： A method of manufacturing a crystalline silicon base semiconductor thin film on a substrate, includes the steps of forming a thin film primarily made of silicon on the substrate by forming plasma of a film material gas containing at least a silicon base gas at the vicinity of the substrate; and crystallizing the silicon in the thin film primarily made of the silicon by emitting excited particles produced from an excited particle material gas to the substrate. At least one of the film material gas and the excited particle material gas contains an impurity gas for forming the silicon semiconductor, and thereby the crystalline silicon base semiconductor thin film is formed on the substrate.
摘要翻译：一种在基板上制造晶体硅基半导体薄膜的方法，包括以下步骤：通过在至少含有硅基气体的膜材料气体的等离子体等离子体上形成主要由硅构成的薄膜，基质; 并且通过将由激发的颗粒材料气体产生的激发的颗粒发射到衬底，使主要由硅制成的薄膜中的硅结晶。至少一种薄膜材料气体和被激发的颗粒材料气体含有用于形成硅半导体的杂质气体，从而在基板上形成晶体硅基半导体薄膜。

4. 发明授权

US06258173B1 Film forming apparatus for forming a crystalline silicon film 失效
标题翻译：用于形成晶体硅膜的成膜装置
公开(公告)号：US06258173B1
公开(公告)日：2001-07-10
申请号：US09236347
申请日：1999-01-25
申请人： Hiroya Kirimura , Kiyoshi Ogata
发明人： Hiroya Kirimura , Kiyoshi Ogata
IPC分类号： C23C1600
CPC分类号： C30B25/105 , C23C16/24 , C23C16/402 , C23C16/54 , C30B29/06
摘要： A film forming apparatus includes a silicon film forming vacuum chamber for forming a crystalline silicon film on a substrate; a film forming device provided for the vacuum chamber for forming a pre-film of the crystalline silicon film on a target surface of the substrate; and an energy beam irradiating device provided for the vacuum chamber for irradiating the pre-film with an energy beam for crystallizing the pre-film. This film forming apparatus produce a crystalline silicon film having a good quality as a semiconductor film for a TFT or the like with good productivity.
摘要翻译：成膜装置包括在基板上形成结晶硅膜的硅膜形成真空室; 为所述真空室提供的成膜装置，用于在所述基板的目标表面上形成所述结晶硅膜的预膜; 以及能量束照射装置，其设置用于真空室，用于用用于使前膜结晶的能量束照射预膜。该成膜装置以高生产率制造具有良好品质的晶体硅膜作为TFT等的半导体膜。

5. 发明授权

US09157884B2 Method for electrochemically detecting target substance, method for electrochemically detecting analyte, and detection set 有权
标题翻译：电化学检测目标物质的方法，电化学检测分析物的方法和检测装置
公开(公告)号：US09157884B2
公开(公告)日：2015-10-13
申请号：US13218113
申请日：2011-08-25
申请人： Masayoshi Seike , Nobuyasu Hori , Seigo Suzuki , Shigeki Iwanaga , Hiroya Kirimura
发明人： Masayoshi Seike , Nobuyasu Hori , Seigo Suzuki , Shigeki Iwanaga , Hiroya Kirimura
IPC分类号： G01N27/26 , G01N27/327 , G01N27/74
CPC分类号： G01N27/3278 , G01N27/745
摘要： In order to provide a method of electrochemically detecting a target substance, a method of electrochemically detecting an analyte, and a detection set which have a theoretical advantage in the measurement sensitivity obtained by a conventional electrochemical detection method using a working electrode with a trapping substance immobilized, can reuse the working electrode, and can detect an analyte regardless of the size thereof, there is provided a method including: attracting the target substance containing a labeling substance in a liquid sample to a working electrode in which a trapping substance for trapping the target substance containing a labeling substance is not present; and electrochemically detecting the target substance containing a labeling substance.
摘要翻译：为了提供电化学检测目标物质的方法，电化学检测分析物的方法和检测组，其具有通过常规电化学检测方法获得的测量灵敏度的理论上的优势，所述电化学检测方法使用固定有捕获物质的工作电极可以重复利用工作电极，并且可以检测分析物而不考虑其大小，提供了一种方法，包括：将含有液体样品中的标记物质的目标物质吸引到用于捕获靶的捕获物质的工作电极不含标签物质的物质不存在; 并电化学检测含有标记物质的目标物质。

6. 发明授权

US5556474A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5556474A
公开(公告)日：1996-09-17
申请号：US357297
申请日：1994-12-13
申请人： Satoshi Otani , Hiroya Kirimura , Hajime Kuwahara , Takao Tabata , Takahiro Nakahigashi , Hiroshi Murakami
发明人： Satoshi Otani , Hiroya Kirimura , Hajime Kuwahara , Takao Tabata , Takahiro Nakahigashi , Hiroshi Murakami
IPC分类号： C23C16/44 , C23C16/509 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32431 , C23C16/4401 , C23C16/4412 , C23C16/5096
摘要： In a plasma processing apparatus, wherein a power application electrode for generating plasma and an electrode opposed thereto are disposed in a process chamber which can be exhausted to attain a predetermined vacuum pressure, an electric power is applied to the power application electrode to generate the plasma from a process gas introduced between the electrodes, and intended plasma processing is effected on a substrate mounted on one of the electrodes in the plasma, the apparatus includes a particle discharge duct which surrounds a periphery and a rear side of the power application electrode and has an opening at a position neighboring to the periphery of the power application electrode, and an exhaust device connected to the duct at a position corresponding to a central portion of the rear side of the power application electrode.
摘要翻译：在等离子体处理装置中，其中用于产生等离子体的电力施加电极和与其相对的电极设置在能够排出以达到预定真空压力的处理室中，向功率施加电极施加电力以产生等离子体从引入在电极之间的工艺气体，并且预期的等离子体处理在安装在等离子体中的一个电极上的基板上进行，该装置包括围绕电力施加电极的周边和后侧的颗粒排放管道，并且具有在与施加电力电极的周围相邻的位置处的开口，以及在与电力施加电极的后侧的中心部分对应的位置连接到管道的排气装置。

7. 发明授权

US06391114B1 Vacuum processing apparatus 失效
标题翻译：真空加工设备
公开(公告)号：US06391114B1
公开(公告)日：2002-05-21
申请号：US09567077
申请日：2000-05-08
申请人： Hiroya Kirimura
发明人： Hiroya Kirimura
IPC分类号： C23C1600
CPC分类号： H01L21/67167 , H01L21/67178 , H01L21/67196
摘要： The invention provides a vacuum processing apparatus, in which a substantial installation area is smaller than that of a conventional vacuum processing apparatus having a plurality of processing chambers of the same size and the same number, and easy maintenance can be achieved. More specifically, the invention provides a vacuum processing apparatus including a plurality of processing chambers, which are provided with processing devices for effecting predetermined processing on a target object, can achieve predetermined internal pressures, and can accommodate the target object for effecting predetermined processing under the predetermined pressures. In the vacuum processing apparatus, the plurality of processing chambers are arranged around a central chamber provided for object transfer and being capable of achieving a predetermined internal pressure, and are connected with the central chamber. The plurality of processing chambers are disposed on two or more vertically different levels, and each of the processing chambers and a processing chamber neighboring thereto in the circumferential direction of the central chamber are disposed on different levels, respectively, and overlap only partially each other.
摘要翻译：本发明提供一种真空处理装置，其中实际安装面积小于具有相同尺寸和相同数量的多个处理室的常规真空处理装置的真空处理装置，并且可以实现容易的维护。更具体地说，本发明提供了一种真空处理装置，其具有多个处理室，该处理室设置有用于对目标物体进行预定处理的处理装置，能够实现预定的内部压力，并且可以容纳目标物体，以实现在预定压力。在真空处理装置中，多个处理室围绕设置于物体转印的中央室设置并能够实现预定的内部压力，并且与中央室连接。多个处理室设置在两个或更多个垂直不同的水平上，并且在中央室的周向方向上的每个处理室和与其相邻的处理室分别设置在不同的等级上，并且仅部分地彼此重叠。

8. 发明授权

US09157885B2 Method of electrochemically detecting target substance, method of electrochemically detecting analyte, test chip, and detection set 有权
标题翻译：电化学检测目标物质的方法，电化学检测分析物的方法，测试芯片和检测装置
公开(公告)号：US09157885B2
公开(公告)日：2015-10-13
申请号：US13244377
申请日：2011-09-24
申请人： Shigeki Iwanaga , Hiroya Kirimura
发明人： Shigeki Iwanaga , Hiroya Kirimura
IPC分类号： G01N33/487 , G01N27/327
CPC分类号： G01N27/3278
摘要： The present invention provides a method for electrochemically detecting a target substance and a method for electrochemically detecting an analyte using a probe holding substrate with a probe for trapping a target substance or an analyte held on the substrate body as well as a test chip and a detection set using the above detection methods.
摘要翻译：本发明提供了一种用于电化学检测目标物质的方法和使用探针保持基板进行电化学检测分析物的方法，所述探针保持基板具有用于捕获保持在基板主体上的目标物质或分析物的探针以及测试芯片和检测设置使用上述检测方法。

9. 发明授权

US08920626B2 Method of electrochemically detecting a sample substance 有权
标题翻译：电化学检测样品物质的方法
公开(公告)号：US08920626B2
公开(公告)日：2014-12-30
申请号：US13306710
申请日：2011-11-29
申请人： Seigo Suzuki , Masayoshi Seike , Shigeki Iwanaga , Nobuyasu Hori , Hiroya Kirimura
发明人： Seigo Suzuki , Masayoshi Seike , Shigeki Iwanaga , Nobuyasu Hori , Hiroya Kirimura
IPC分类号： G01N27/00 , G01N33/543
CPC分类号： G01N33/5438
摘要： A sample substance S is captured by a capture substance 10 which is immobilized on a working electrode body 161 to provide a method of electrochemically detecting a sample substance capable of detecting the sample substance with high sensitivity. A complex which includes, on a soluble carrier 21, a sample substance S and a labeled binder 20 that has a modified labeled substance 23 containing a labeled substance 20 bound to modified labeled substance 23 containing a labeled substance 24 and a binder 22 that binds to the sample substance S, formed on the working electrode 161. The soluble carrier 21 is dissolved, and the modified labeled substance 23 is attracted to the working electrode 161.
摘要翻译：样品物质S被固定在工作电极体161上的捕获物质10捕获，以提供电化学检测能够以高灵敏度检测样品物质的样品物质的方法。在可溶性载体21上包含样品物质S和标记粘合剂20的复合物，其具有与标记物质20结合的经修饰标记物质23的修饰标记物质23，所述标记物质20与经标记物质24和粘合剂22结合的修饰标记物质23结合，样品物质S形成在工作电极161上。可溶性载体21溶解，改性标记物23被吸引到工作电极161。

10. 发明授权

US07901978B2 Method of fabricating thin-film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US07901978B2
公开(公告)日：2011-03-08
申请号：US11918245
申请日：2006-03-28
申请人： Yukiharu Uraoka , Takashi Fuyuki , Hiroya Kirimura
发明人： Yukiharu Uraoka , Takashi Fuyuki , Hiroya Kirimura
IPC分类号： H01L51/40
CPC分类号： H01L29/78672 , C30B29/58 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L29/1029
摘要： The core metal of a protein such as ferritin is used as a nucleus for crystallizing a silicone thin film and then the thus crystallized film is employed in the channel part of a thin-film transistor. By aligning the protein on the surface of amorphous silicone and heating, the crystallinity is controlled. In the case of ferritin, the core diameter of the protein is 7 mm. That is, this protein is highly even in size (i.e., the metal content). Thus, the amount of the protein to be deposited on the amorphous silicone surface can be accurately controlled by controlling the protein core density. Furthermore, the type of the core metal can be altered by chemical reactions and the above method is applicable not only to amorphous silicone but also to amorphous films of various types such as germanium. Thus, the amount of nickel required in crystallization is controlled by using a protein. Moreover, the distribution density of the nickel core is controlled to thereby conduct crystallization at a desired crystal size.
摘要翻译：蛋白质如铁蛋白的核心金属用作结晶硅氧烷薄膜的核，然后将这样结晶的膜用于薄膜晶体管的沟道部分。通过将无定形硅氧烷表面上的蛋白质对准并加热，控制结晶度。在铁蛋白的情况下，蛋白质的核心直径为7mm。也就是说，该蛋白质的大小（即，金属含量）高度均匀。因此，可以通过控制蛋白质核密度来精确地控制沉积在非晶硅表面上的蛋白质的量。此外，核心金属的种类可以通过化学反应而改变，并且上述方法不仅适用于无定形硅氧烷，而且也适用于各种类型的非晶态锗如锗。因此，通过使用蛋白质来控制结晶所需的镍的量。此外，控制镍芯的分布密度，从而以期望的晶体尺寸进行结晶。

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