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1. 发明专利

JP2005286067A Forming method of polycrystalline silicon film 审中-公开
标题翻译：多晶硅薄膜的形成方法
公开(公告)号：JP2005286067A
公开(公告)日：2005-10-13
申请号：JP2004097093
申请日：2004-03-29
申请人： Takashi Fuyuki , Sanyo Electric Co Ltd , 三洋電機株式会社 , 隆冬木
发明人： MATSUMI SHIN , FUYUKI TAKASHI
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a polycrystalline silicon film having a BSF (Back Surface Field) structure on a substrate without performing fused recrystallization after film formation. SOLUTION: A silicon feedstock gas containing chlorine and a dopant gas under high concentration doping conditions are supplied; and vapor phase epitaxy is carried out at a temperature not lower than the decomposition temperature of the feedstock gas and lower than the optimum growth temperature to grow a p-type polycrystalline silicon film 21, until a columnar crystal is grown on the substrate 1 in the film thickness direction. Then, a same p-type polycrystalline silicon film 22 is continuously formed according to the vapor phase epitaxy at the optimum growth temperature. Thus, the first p-type polycrystalline silicon film 21 is formed on the substrate 1, and the second p-type polycrystalline silicon film 22 having a carrier concentration lower than that of the first p-type polycrystalline silicon film 21 is formed on this silicon film 21 to obtain the BSF structure. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在基板上形成具有BSF（背面场）结构的多晶硅膜的方法，而不在成膜后进行熔融重结晶。提供了在高浓度掺杂条件下含有氯和掺杂气体的硅原料气体; 并且气相外延在不低于原料气体的分解温度的温度下进行，并且低于最佳生长温度以生长p型多晶硅膜21，直到柱状晶体在基板1上生长膜厚度方向。然后，根据气相外延在最佳生长温度下连续形成相同的p型多晶硅膜22。因此，在基板1上形成第一p型多晶硅膜21，在该硅上形成载流子浓度低于第一p型多晶硅膜21的第二p型多晶硅膜22 电影21获得BSF结构。版权所有（C）2006，JPO＆NCIPI

2. 发明申请

US20130023090A1 FIBER SOI SUBSTRATE, SEMICONDUCTOR DEVICE USING THIS, AND MANUFACTURING METHOD THEREOF 有权
标题翻译：光纤SOI衬底，使用此的半导体器件及其制造方法
公开(公告)号：US20130023090A1
公开(公告)日：2013-01-24
申请号：US13614512
申请日：2012-09-13
申请人： Takashi FUYUKI , Kenkichi Suzuki , Sadayuki Toda , Hisashi Koaizawa
发明人： Takashi FUYUKI , Kenkichi Suzuki , Sadayuki Toda , Hisashi Koaizawa
IPC分类号： H01L21/20 , H01L21/58
CPC分类号： H01L29/78603 , H01L21/0242 , H01L21/02428 , H01L21/02532 , H01L21/02686 , H01L21/67069 , H01L21/84 , H01L27/016 , H01L27/12
摘要： The present invention provides a SOI substrate that can realize a composite device formed of a MOS integrated circuit and a passive device and can reduce a size and a manufacturing cost of a semiconductor device. There is provided a fiber SOI substrate 5 comprising a fiber 1 with a polygonal cross section, and a semiconductor thin film 3 crystallized after film formation on at least one surface of the fiber 1, and a plurality of grooves 8 that extend in a linear direction of the fiber 1 and are arranged at intervals in a width direction are formed on a surface of the fiber 1.
摘要翻译：本发明提供一种可以实现由MOS集成电路和无源器件形成的复合器件的SOI衬底，并且可以减小半导体器件的尺寸和制造成本。提供了一种光纤SOI衬底5，其包括具有多边形截面的光纤1和在光纤1的至少一个表面上成膜之后结晶的半导体薄膜3以及沿线性方向延伸的多个凹槽8 在纤维1的表面上形成宽度方向的间隔。

3. 发明申请

US20080088829A1 Method And Apparatus For Evaluating Solar Cell And Use Thereof 有权
标题翻译：用于评估太阳能电池的方法和装置及其用途
公开(公告)号：US20080088829A1
公开(公告)日：2008-04-17
申请号：US11791761
申请日：2005-11-29
申请人： Takashi Fuyuki
发明人： Takashi Fuyuki
IPC分类号： G01J1/12
CPC分类号： G01N21/66 , G01J1/08 , G01J2001/4247 , H01L31/186 , H02S50/10 , Y02B10/12 , Y02E10/50 , Y02P70/521
摘要： Disclosed is a method for evaluating the performance of a solar cell which comprises a silicon semiconductor as the main component. This method comprises a current introduction step for introducing a direct current into a solar cell element constituting the solar cell in the forward direction, and an emission sensing step for sensing emission characteristics of the light emitted from the solar cell element due to the current introduction step. By this method, the photoelectric conversion performance of a solar cell can be simply and accurately evaluated without requiring large-sized equipment.
摘要翻译：公开了以硅半导体为主要成分的太阳能电池的性能评价方法。该方法包括：电流引入步骤，用于将直流电流引导到沿正向方向构成太阳能电池的太阳能电池元件;以及发射感测步骤，用于感测由于当前引入步骤而从太阳能电池元件发射的光的发射特性。通过这种方法，可以简单且准确地评估太阳能电池的光电转换性能，而不需要大型设备。

4. 发明授权

US08698083B2 Solar cell evaluation method, evaluation device, maintenance method, maintenance system, and method of manufacturing solar cell module 有权
标题翻译：太阳能电池评估方法，评估装置，维护方法，维护系统以及制造太阳能电池组件的方法
公开(公告)号：US08698083B2
公开(公告)日：2014-04-15
申请号：US13388129
申请日：2010-08-03
申请人： Takashi Fuyuki , Ayumi Tani
发明人： Takashi Fuyuki , Ayumi Tani
IPC分类号： G01J5/00 , G01N21/00 , G01N21/66 , G01R31/26 , G01N21/95
CPC分类号： G01R31/2605 , G01N21/66 , G01N21/88 , G01N21/9505 , G01R31/308 , G06T2207/10048 , H01L31/186 , H02S50/10 , Y02E10/50 , Y02P70/521
摘要： A method and device for evaluating a solar cell each of which makes it possible to easily evaluate a defect of a solar cell especially in such a manner that an internal cause defect and an external cause defect are distinguished from each other. The device includes: electric current passing means for passing, in a forward direction, an electric current through a solar cell element constituting the solar cell; light emission detecting means for detecting, out of light emitted from the solar cell element due to the electric current passed by the electric current passing means, light in a first range of wavelengths from 800 nm to 1300 nm and light in a second range of wavelengths from 1400 nm to 1800 nm; and judging means for distinguishing between an internal cause defect and an external cause defect.
摘要翻译：一种用于评估太阳能电池的方法和装置，每个太阳能电池都可以容易地评估太阳能电池的缺陷，特别是以内部原因缺陷和外部原因缺陷彼此区分。该装置包括：电流通过装置，用于沿向前方向通过构成太阳能电池的太阳能电池元件的电流; 发光检测装置，用于检测由于通过电流通过装置的电流而从太阳能电池元件发出的光，在第一波长范围为800nm至1300nm的光和在第二波长范围内的光从1400nm到1800nm; 以及用于区分内部原因缺陷和外部原因缺陷的判断装置。

5. 发明申请

US20120126120A1 SOLAR CELL EVALUATION METHOD, EVALUATION DEVICE, MAINTENANCE METHOD, MAINTENANCE SYSTEM, AND METHOD OF MANUFACTURING SOLAR CELL MODULE 有权
标题翻译：太阳能电池评估方法，评估装置，维护方法，维护系统和制造太阳能电池模块的方法
公开(公告)号：US20120126120A1
公开(公告)日：2012-05-24
申请号：US13388129
申请日：2010-08-03
申请人： Takashi Fuyuki , Ayumi Tani
发明人： Takashi Fuyuki , Ayumi Tani
IPC分类号： G01J5/10 , H01L27/146
CPC分类号： G01R31/2605 , G01N21/66 , G01N21/88 , G01N21/9505 , G01R31/308 , G06T2207/10048 , H01L31/186 , H02S50/10 , Y02E10/50 , Y02P70/521
摘要： A method and device for evaluating a solar cell each of which makes it possible to easily evaluate a defect of a solar cell especially in such a manner that an internal cause defect and an external cause defect are distinguished from each other. The device includes: electric current passing means for passing, in a forward direction, an electric current through a solar cell element constituting the solar cell; light emission detecting means for detecting, out of light emitted from the solar cell element due to the electric current passed by the electric current passing means, light in a first range of wavelengths from 800 nm to 1300 nm and light in a second range of wavelengths from 1400 nm to 1800 nm; and judging means for distinguishing between an internal cause defect and an external cause defect.
摘要翻译：一种用于评估太阳能电池的方法和装置，每个太阳能电池都可以容易地评估太阳能电池的缺陷，特别是以内部原因缺陷和外部原因缺陷彼此区分。该装置包括：电流通过装置，用于沿向前方向通过构成太阳能电池的太阳能电池元件的电流; 发光检测装置，用于检测由于通过电流通过装置的电流而从太阳能电池元件发出的光，在第一波长范围为800nm至1300nm的光和在第二波长范围内的光从1400nm到1800nm; 以及用于区分内部原因缺陷和外部原因缺陷的判断装置。

6. 发明授权

US07847237B2 Method and apparatus for testing and evaluating performance of a solar cell 有权
标题翻译：用于测试和评估太阳能电池性能的方法和装置
公开(公告)号：US07847237B2
公开(公告)日：2010-12-07
申请号：US12226820
申请日：2007-04-25
申请人： Takashi Fuyuki
发明人： Takashi Fuyuki
IPC分类号： H01J7/24 , G01J1/44 , G01R31/00
CPC分类号： H02S50/10
摘要： A method for evaluating performance of a solar cell, comprising: a current passing step (S1) of passing, in a forward direction, a direct current with respect to a solar cell element constituting the solar cell; a temperature control step (S2) of heating the solar cell element and controlling a heating temperature of the solar cell element; and a light emission detecting step (S3) of detecting light emission characteristics of light generated from the solar cell element due to the passing of the direct current in the current passing step and the heating of the solar cell element in the temperature control step (S2).
摘要翻译：一种用于评估太阳能电池的性能的方法，包括：电流通过步骤（S1），其相对于构成所述太阳能电池的太阳能电池元件沿正向通过直流电; 加热太阳能电池元件并控制太阳能电池元件的加热温度的温度控制步骤（S2）; 以及在温度控制步骤（S2）中检测由于电流通过步骤中的直流电流和太阳能电池元件的加热而产生的太阳能电池元件产生的光的发光特性的发光检测步骤（S3））。

7. 发明申请

US20090127448A1 Method and Device for Evaluating Solar Cell and Use Thereof 有权
标题翻译：用于评估太阳能电池的方法和装置及其用途
公开(公告)号：US20090127448A1
公开(公告)日：2009-05-21
申请号：US12226820
申请日：2007-04-25
申请人： Takashi Fuyuki
发明人： Takashi Fuyuki
IPC分类号： H01J40/14
CPC分类号： H02S50/10
摘要： A method for evaluating performance of a solar cell, comprising: a current passing step (S1) of passing, in a forward direction, a direct current with respect to a solar cell element constituting the solar cell; a temperature control step (S2) of heating the solar cell element and controlling a heating temperature of the solar cell element; and a light emission detecting step (S3) of detecting light emission characteristics of light generated from the solar cell element due to the passing of the direct current in the current passing step and the heating of the solar cell element in the temperature control step (S2).
摘要翻译：一种用于评估太阳能电池的性能的方法，包括：电流通过步骤（S1），其相对于构成所述太阳能电池的太阳能电池元件沿正向通过直流电; 加热太阳能电池元件并控制太阳能电池元件的加热温度的温度控制步骤（S2）; 以及在温度控制步骤（S2）中检测由于电流通过步骤中的直流电流和太阳能电池元件的加热而产生的太阳能电池元件产生的光的发光特性的发光检测步骤（S3））。

8. 发明授权

US07601941B2 Method and apparatus for evaluating solar cell and use thereof 有权
标题翻译：用于评估太阳能电池的方法和装置及其用途
公开(公告)号：US07601941B2
公开(公告)日：2009-10-13
申请号：US11791761
申请日：2005-11-29
申请人： Takashi Fuyuki
发明人： Takashi Fuyuki
IPC分类号： G01J1/00 , G01M11/00 , H01L21/06 , H01L31/04
CPC分类号： G01N21/66 , G01J1/08 , G01J2001/4247 , H01L31/186 , H02S50/10 , Y02B10/12 , Y02E10/50 , Y02P70/521
摘要： Disclosed is a method for evaluating the performance of a solar cell which comprises a silicon semiconductor as the main component. This method comprises a current introduction step for introducing a direct current into a solar cell element constituting the solar cell in the forward direction, and an emission sensing step for sensing emission characteristics of the light emitted from the solar cell element due to the current introduction step. By this method, the photoelectric conversion performance of a solar cell can be simply and accurately evaluated without requiring large-sized equipment.
摘要翻译：公开了以硅半导体为主要成分的太阳能电池的性能评价方法。该方法包括：电流引入步骤，用于将直流电流引导到沿正向方向构成太阳能电池的太阳能电池元件;以及发射感测步骤，用于感测由于当前引入步骤而从太阳能电池元件发射的光的发射特性。通过这种方法，可以简单且准确地评估太阳能电池的光电转换性能，而不需要大型设备。

9. 发明申请

US20090001501A1 Fiber Soi Substrate, Semiconductor Device Using Same and Method for Manufacturing Same 审中-公开
标题翻译：光纤基板，使用相同的半导体器件和制造方法相同
公开(公告)号：US20090001501A1
公开(公告)日：2009-01-01
申请号：US11718302
申请日：2005-10-27
申请人： Takashi Fuyuki , Kenkichi Suzuki , Sadayuki Toda , Hisashi Koaizawa
发明人： Takashi Fuyuki , Kenkichi Suzuki , Sadayuki Toda , Hisashi Koaizawa
IPC分类号： H01L29/00 , H01L21/20
CPC分类号： H01L29/78603 , H01L21/0242 , H01L21/02428 , H01L21/02532 , H01L21/02686 , H01L21/67069 , H01L21/84 , H01L27/016 , H01L27/12
摘要： The present invention provides a SOI substrate that can realize a composite device formed of a MOS integrated circuit and a passive device and can reduce a size and a manufacturing cost of a semiconductor device.There is provided a fiber SOI substrate 5 comprising a fiber 1 with a polygonal cross section, and a semiconductor thin film 3 crystallized after film formation on at least one surface of the fiber 1, and a plurality of grooves 8 that extend in a linear direction of the fiber 1 and are a ranged at intervals in a width direction are formed on a surface of the fiber 1.
摘要翻译：本发明提供一种可以实现由MOS集成电路和无源器件形成的复合器件的SOI衬底，并且可以减小半导体器件的尺寸和制造成本。提供了一种光纤SOI衬底5，其包括具有多边形截面的光纤1和在光纤1的至少一个表面上成膜之后结晶的半导体薄膜3以及沿线性方向延伸的多个凹槽8 在纤维1的表面上形成宽度方向的间隔。

10. 发明申请

US20090050880A1 Method of Fabricating Thin-Film Transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US20090050880A1
公开(公告)日：2009-02-26
申请号：US11918245
申请日：2006-03-28
申请人： Yukiharu Uraoka , Takashi Fuyuki , Hiroya Kirimura
发明人： Yukiharu Uraoka , Takashi Fuyuki , Hiroya Kirimura
IPC分类号： H01L35/24 , H01L51/40
CPC分类号： H01L29/78672 , C30B29/58 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L29/1029
摘要： The core metal of a protein such as ferritin is used as a nucleus for crystallizing a silicone thin film and then the thus crystallized film is employed in the channel part of a thin-film transistor. By aligning the protein on the surface of amorphous silicone and heating, the crystallinity is controlled. In the case of ferritin, the core diameter of the protein is 7 mm. That is, this protein is highly even in size (i.e., the metal content). Thus, the amount of the protein to be deposited on the amorphous silicone surface can be accurately controlled by controlling the protein core density. Furthermore, the type of the core metal can be altered by chemical reactions and the above method is applicable not only to amorphous silicone but also to amorphous films of various types such as germanium. Thus, the amount of nickel required in crystallization is controlled by using a protein. Moreover, the distribution density of the nickel core is controlled to thereby conduct crystallization at a desired crystal size.
摘要翻译：蛋白质如铁蛋白的核心金属用作结晶硅氧烷薄膜的核，然后将这样结晶的膜用于薄膜晶体管的沟道部分。通过将无定形硅氧烷表面上的蛋白质对准并加热，控制结晶度。在铁蛋白的情况下，蛋白质的核心直径为7mm。也就是说，该蛋白质的大小（即，金属含量）高度均匀。因此，可以通过控制蛋白质核心密度来精确地控制沉积在非晶硅表面上的蛋白质的量。此外，核心金属的种类可以通过化学反应而改变，并且上述方法不仅适用于无定形硅氧烷，而且也适用于各种类型的非晶态锗如锗。因此，通过使用蛋白质来控制结晶所需的镍的量。此外，控制镍芯的分布密度，从而以期望的晶体尺寸进行结晶。

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