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1. 发明授权

US4647782A Charged particle beam exposure apparatus 失效
标题翻译：带电粒子束曝光装置
公开(公告)号：US4647782A
公开(公告)日：1987-03-03
申请号：US800918
申请日：1985-11-25
申请人： Hirotsugu Wada , Shunichi Sano , Mamoru Nakasuji , Ryoichi Yoshikawa
发明人： Hirotsugu Wada , Shunichi Sano , Mamoru Nakasuji , Ryoichi Yoshikawa
IPC分类号： H01L21/027 , H01J37/30 , H01J37/304 , H01J37/317 , H01L21/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/304 , H01J37/3174 , H01L21/30 , H01J2237/15 , H01J2237/30455 , H01J2237/31776
摘要： The dimensions of the cross section of an electron beam emitted from a beam source are changed by deflectors interposed between a pair of aperture masks and are position-corrected by beam position correction deflectors. The electron beam is then irradiated onto a wafer. In accordance with beam dimension signals from a CPU, a correction signal generating circuit supplies correction signals to a beam position correction circuit. The circuit supplies beam position correction signals to the deflectors.
摘要翻译：从光束源发射的电子束的横截面的尺寸由插入在一对孔径掩模之间的偏转器改变，并且由光束位置校正偏转器进行位置校正。然后将电子束照射到晶片上。根据来自CPU的光束尺寸信号，校正信号发生电路向光束位置校正电路提供校正信号。电路将光束位置校正信号提供给偏转器。

2. 发明授权

US4346325A Electron gun 失效
标题翻译：电子枪
公开(公告)号：US4346325A
公开(公告)日：1982-08-24
申请号：US134677
申请日：1980-03-27
申请人： Mamoru Nakasuji , Hirotsugu Wada
发明人： Mamoru Nakasuji , Hirotsugu Wada
IPC分类号： H01J1/16 , H01J37/06 , H01J19/10
CPC分类号： H01J1/16 , H01J37/06
摘要： An electron gun for a shaped beam type electron beam delineating system is provided with a cathode which is prepared from a single crystal of lanthanum hexaboride (LaB.sub.6) the convex end portion of which has a tip radius ranging between 260 and 1,000 microns. The electron gun of the invention has a long effective life for producing a stable electron beam which can irradiate a limiting aperture with a uniform current density and insures the sufficiently high brightness of the electron beam image projected on a target.
摘要翻译：用于成型梁型电子束描绘系统的电子枪具有阴极，该阴极由六边形镧六硼化镧（LaB6）的单晶制成，其凸出端部的半径范围为260-1,000微米。本发明的电子枪具有长时间的有效寿命，用于产生稳定的电子束，该稳定的电子束可以以均匀的电流密度照射限制孔径并确保投影在靶上的电子束图像的足够高的亮度。

3. 发明授权

US4543512A Electron beam exposure system 失效
标题翻译：电子束曝光系统
公开(公告)号：US4543512A
公开(公告)日：1985-09-24
申请号：US309780
申请日：1981-10-08
申请人： Mamoru Nakasuji , Hirotsugu Wada
发明人： Mamoru Nakasuji , Hirotsugu Wada
IPC分类号： H01J37/304 , H01J29/58
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/304
摘要： An electron beam exposure system has first and second apertures through which is passed an electron beam emitted from an electron gun. A rectangular image formed by superposition of the images formed by the first and second apertures is projected onto a target plane through a third aperture by condenser lenses and projection lenses. When a crossover of the electron beam drifts in the direction perpendicular to the axis of the lens system, the current of the electron beam projected on the target plate decreases. The electron beam current is detected by a faraday cup, and the locus of the electron beam is corrected by a coil assembly interposed between the second and third apertures so that the faraday cup may detect the maximum beam current.
摘要翻译：电子束曝光系统具有第一和第二孔，通过该孔使从电子枪发射的电子束通过。通过由第一和第二孔形成的图像叠加形成的矩形图像通过聚光透镜和投影透镜通过第三孔投影到目标平面上。当电子束的交叉在与透镜系统的轴线垂直的方向上漂移时，投射在靶板上的电子束的电流减小。电子束电流由法拉第杯检测，电子束的轨迹由介于第二和第三孔之间的线圈组件校正，以便法拉第杯可以检测最大束电流。

4. 发明授权

US4558225A Target body position measuring method for charged particle beam fine pattern exposure system 失效
标题翻译：带电粒子束精细图案曝光系统的目标体位置测量方法
公开(公告)号：US4558225A
公开(公告)日：1985-12-10
申请号：US527486
申请日：1983-08-29
申请人： Mineo Gotou , Ryoichi Yoshikawa , Toru Tojo , Hirotsugu Wada
发明人： Mineo Gotou , Ryoichi Yoshikawa , Toru Tojo , Hirotsugu Wada
IPC分类号： G01B15/00 , H01J37/304 , H01L21/027 , H01L21/30 , G03F9/00
CPC分类号： H01J37/3045 , H01L21/30
摘要： Disclosed is a method for measuring the position of a silicon wafer as a workpiece to be exposed. The method is suitably used in an electron beam exposure system. A wafer has a plurality of chip alignment marks which respectively designate a plurality of chip field areas, included in a dicing line area. When the wafer is contained ion a holder and is fixed in the exposure system, edge portions of the wafer are partially scanned with the electron beam to roughly measure the position of the wafer. In accordance with this wafer position data, a wafer surface portion required for detecting only the marks is defined within the dicing line area. In the mark detection with the electron beam, the electron beam irradiates only the defined wafer surface portion of the wafer surface, thereby providing highly precise measurement of the wafer position and avoiding undesirable irritation of the circuit formation area.
摘要翻译：公开了一种用于测量作为待曝光的工件的硅晶片的位置的方法。该方法适用于电子束曝光系统。晶片具有分别指定在切割线区域中的多个芯片场区域的多个芯片对准标记。当晶片被包含在保持器上并固定在曝光系统中时，晶片的边缘部分被电子束部分地扫描以粗略地测量晶片的位置。根据该晶片位置数据，在切割线区域内限定仅检测标记所需的晶片表面部分。在用电子束进行的标记检测中，电子束仅照射晶片表面的限定的晶片表面部分，从而提供对晶片位置的高精度测量，并避免对电路形成区域的不期望的刺激。

5. 发明授权

US5234780A Exposure mask, method of manufacturing the same, and exposure method using the same 失效
标题翻译：曝光掩模，其制造方法和使用该曝光掩模的曝光方法
公开(公告)号：US5234780A
公开(公告)日：1993-08-10
申请号：US467149
申请日：1990-01-18
申请人： Akihiro Nitayama , Makoto Nakase , Kouji Hashimoto , Hirotsugu Wada
发明人： Akihiro Nitayama , Makoto Nakase , Kouji Hashimoto , Hirotsugu Wada
IPC分类号： G03F1/00
CPC分类号： G03F1/29
摘要： An exposure mask for lithography, a method of manufacturing the same, and an exposure method using the same are disclosed. A light-transmitting opening of the exposure mask has a main light-transmitting region located in the middle of the opening and having a first optical path length, and phase shift regions adjacent to a light-shielding layer and having a second optical path length, different from the first optical path length. Light transmitted through each phase shift region interferes with light transmitted through the main light-transmitting region at the edges of the light-transmitting opening, thus enabling a sharp photo-intensity distribution of total transmitted light to be obtained. As a result, the resolution of the exposure mask is improved.

6. 发明申请

US20120038317A1 WIRELESS CHARGING SYSTEM 审中-公开
标题翻译：无线充电系统
公开(公告)号：US20120038317A1
公开(公告)日：2012-02-16
申请号：US13197842
申请日：2011-08-04
申请人： Takashi Miyamoto , Yoichi Uramoto , Kohei Mori , Hirotsugu Wada , Takaaki Hashiguchi
发明人： Takashi Miyamoto , Yoichi Uramoto , Kohei Mori , Hirotsugu Wada , Takaaki Hashiguchi
IPC分类号： H02J7/00
CPC分类号： H02J7/025 , H02J50/12 , H02J50/40 , H02J50/60 , H02J50/80
摘要： Disclosed herein is a wireless charging system, including: a primary device that includes a power transmitter adapted to transmit power wirelessly; and a secondary device that includes a power receiver adapted to receive power transmitted wirelessly from the power transmitter, wherein the secondary device also includes a sensor adapted to detect any anomaly in the power transmission path between the power transmitter and receiver.
摘要翻译：本文公开了一种无线充电系统，包括：主设备，其包括适于无线发射功率的功率发射器; 以及辅助设备，其包括适于接收从所述电力发射机无线传输的功率的功率接收器，其中所述辅助设备还包括适于检测所述功率发射器和接收器之间的功率传输路径中的任何异常的传感器。

7. 发明授权

US5047646A Method of correcting astigmatism of variable shaped beam 失效
标题翻译：可变形梁的散光矫正方法
公开(公告)号：US5047646A
公开(公告)日：1991-09-10
申请号：US570024
申请日：1990-08-20
申请人： Kiyoshi Hattori , Shuichi Tamamushi , Eiji Nishimura , Naotaka Ikeda , Hirotsugu Wada
发明人： Kiyoshi Hattori , Shuichi Tamamushi , Eiji Nishimura , Naotaka Ikeda , Hirotsugu Wada
IPC分类号： G03F7/20 , H01J37/153 , H01L21/027 , H01L21/30
CPC分类号： H01J37/153
摘要： A method of correcting astigmatism of a variable shaped beam uses a charged beam lithographic apparatus having a deflector for generating the shaped beam, a focus correction coil for adjusting a focus of the shaped beam, and astigmatism correction coils for correcting the astigmatism of the shaped beam. The method comprises the steps of adjusting the focus of the shaped beam by using the focus correction coil, and correcting the astigmatism of the shaped beam by using the astigmatism correction coils, the step of correcting the astigmatism of the shaped beam including the substeps of measuring first edge resolutions of the shaped beam in an arbitrary first direction and a second direction perpendicular to the first direction, and correcting first astigmatism in the first and second directions on the basis of the first edge resolutions, and measuring second edge resolutions in a third direction oblique to the first direction and a fourth direction perpendicular to the third direction, and correcting second astigmatism in the third and fourth directions on the basis of the second edge resolutions.

8. 发明申请

US20110163609A1 WIRELESS POWER FEED SYSTEM 审中-公开
标题翻译：无线供电系统
公开(公告)号：US20110163609A1
公开(公告)日：2011-07-07
申请号：US12977190
申请日：2010-12-23
申请人： Hirotsugu Wada , Takashi Miyamoto
发明人： Hirotsugu Wada , Takashi Miyamoto
IPC分类号： H01F38/14
CPC分类号： H02J50/12 , H02J5/005
摘要： Disclosed herein is a wireless power feed system including a power feed device, and a power receiving device configured to receive power transmitted from the power feed device. The power feed device includes a power generator to generate power that should be fed, and a resonant element fed with power generated by the power generator. The power receiving device includes a power receiving element to receive power transmitted from the power feed device, and a matching unit including a function for impedance matching at a connecting part between the power and a load of the power receiving element.
摘要翻译：这里公开了一种无线供电系统，其包括供电装置和被配置为接收从供电装置传送的电力的电力接收装置。供电装置包括发电机以产生应馈送的电力，以及馈送有由发电机产生的电力的谐振元件。电力接收装置包括：受电元件，用于接收从供电装置发送的电力;以及匹配单元，包括在电力和电力接收元件的负载之间的连接部分处的阻抗匹配功能。

9. 发明授权

US5843603A Method of evaluating shaped beam of charged beam writer and method of forming pattern 失效
标题翻译：充电光束写入器的成形光束的评估方法和形成图案的方法
公开(公告)号：US5843603A
公开(公告)日：1998-12-01
申请号：US701614
申请日：1996-08-22
申请人： Atsushi Ando , Hitoshi Sunaoshi , Hirotsugu Wada , Kazuyoshi Sugihara
发明人： Atsushi Ando , Hitoshi Sunaoshi , Hirotsugu Wada , Kazuyoshi Sugihara
IPC分类号： G03F7/20 , H01J37/302 , H01J37/317 , G03F9/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/2059 , H01J37/3026 , H01J37/3174 , H01J2237/31776 , Y10S430/143
摘要： A method of evaluating a shaped beam generated by a charged beam writer, comprises the steps of: a first step of shaping line beams by dividing into 1/n one side of the shaped beam having a dimension "a" in an x direction and a dimension "b" in a y direction perpendicular to the x direction, where n is the number of divisions; a second step of irradiating the shaped line beam upon a surface of the sample or the movable stage for a constant time or longer; a third step of shaping a beam by adding a bias value .delta. to each line beam width in the divided direction; a fourth step of irradiating the line beam obtained by adding the bias value to the shaped line beam upon a photosensitive substance on the sample surface for a constant time for exposure; a fifth step of repeating the fourth step exposure (n-1) times by shifting the line beam obtained by adding the bias value to the line beam, in the direction that one side of the shaped beam is divided into 1/n, and developing the photosensitive substance, to obtain a pattern width .theta.; a sixth step of repeating the above first to fifth steps by changing the number of divisions n and the bias value .delta.; and a seventh step of obtaining a change rate .DELTA..theta./.DELTA.n of the pattern width .theta. relative to the number of divisions n for each bias value .delta., to obtain an offset drift rate on the basis of the obtained change rate and the bias value. The method can evaluate a beam offset drift rate between the set beam dimension and the actual beam dimension, so that a microscopic pattern can be formed at a high precision.
摘要翻译：一种评估由带电光束写入器产生的成形光束的方法，包括以下步骤：通过在x方向上划分成具有尺寸“a”的成形光束的1 / n的一侧来对线束进行成形的第一步骤，以及尺寸“b”垂直于x方向的方向，其中n是分割数; 将成形线束照射在样品或可移动台的表面上恒定时间或更长的第二步骤; 第三步骤，通过在分割方向上的每个线束宽度上增加偏置值δ来对波束进行成形; 第四步骤，通过将所述成形线束的偏置值加到所述样品表面上的感光物质上以恒定时间曝光而获得的线束; 通过将通过将偏置值添加到线束而获得的线束在成形光束的一侧被划分为1 / n的方向上，并且显影（n-1）倍重复第四步曝光（n-1）次的第五步骤感光物质，以获得图案宽度θ; 通过改变分割数n和偏差值δ来重复上述第一至第五步骤的第六步骤; 以及第七步骤，针对每个偏差值delta获得相对于分割数n的图案宽度θ的变化率DELTAθ/ DELTA n，以基于获得的变化率和偏置值获得偏移漂移率。该方法可以评估设定光束尺寸和实际光束尺寸之间的光束偏移漂移率，从而可以高精度地形成微观图案。

10. 发明授权

US4269653A Aperture stop 失效
标题翻译：孔径停止
公开(公告)号：US4269653A
公开(公告)日：1981-05-26
申请号：US91037
申请日：1979-11-05
申请人： Hirotsugu Wada , Toshiaki Shinozaki
发明人： Hirotsugu Wada , Toshiaki Shinozaki
IPC分类号： C23F1/04 , C25D1/08 , G02B5/00 , H01J37/09 , H01L21/027 , B23P15/16
CPC分类号： G03F1/20 , C23F1/04 , C25D1/08 , G02B5/005 , H01J37/09
摘要： A method of manufacturing an aperture stop with a rectangular aperture for an electron beam exposure device, comprising the steps of: preparing a single-crystal silicon substrate with one side having a (100) face; providing a mask on said side of the substrate; selectively etching the substrate through the mask from said side to form a projecting portion of rectangular cross section by anisotropic etching; forming an aperture layer by covering said one side of the etched substrate with a high-melting-point metal having good electric conductivity, thereby surrounding said projecting portion; and forming in said aperture layer a rectangular aperture with a cross section corresponding to the cross section of said projecting portion by removing said substrate from the aperture layer.
摘要翻译：一种制造具有用于电子束曝光装置的矩形孔径的孔径光阑的方法，包括以下步骤：制备具有（100）面的一侧的单晶硅衬底; 在所述基板的所述侧面上设置掩模; 通过所述侧面通过所述掩模选择性地蚀刻所述衬底，以通过各向异性蚀刻形成矩形横截面的突出部分; 通过用具有良好导电性的高熔点金属覆盖所述蚀刻的基板的所述一侧来形成开口层，从而包围所述突出部分; 以及通过从所述孔层移除所述基底，在所述孔层中形成具有对应于所述突出部分的横截面的横截面的矩形孔。

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