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1. 发明申请

US20080237808A1 Semiconductor Device and Method of Manufacturing the Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080237808A1
公开(公告)日：2008-10-02
申请号：US12134861
申请日：2008-06-06
申请人： Hirotoshi Kubo , Yukari Shirahata , Shigehito Matsumoto , Masamichi Yamamuro , Koujiro Kameyama , Mitsuo Umemoto
发明人： Hirotoshi Kubo , Yukari Shirahata , Shigehito Matsumoto , Masamichi Yamamuro , Koujiro Kameyama , Mitsuo Umemoto
IPC分类号： H01L23/538 , H05K1/18
CPC分类号： H01L29/7322 , H01L23/3128 , H01L23/481 , H01L23/4824 , H01L23/4951 , H01L23/49562 , H01L24/05 , H01L24/06 , H01L24/17 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/91 , H01L29/1004 , H01L29/41708 , H01L29/66272 , H01L2224/0401 , H01L2224/04042 , H01L2224/05556 , H01L2224/05624 , H01L2224/05647 , H01L2224/05684 , H01L2224/13099 , H01L2224/32225 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/0781 , H01L2924/12033 , H01L2924/12036 , H01L2924/12041 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/351 , H01L2924/00012 , H01L2924/00 , H01L2224/45099
摘要： Disclosed is a semiconductor device in which emitter pad electrodes connected to an active region, collector and base pad electrodes are formed on a surface of a semiconductor substrate. Furthermore, on a back surface of the semiconductor substrate, a backside electrode is formed. Moreover, the emitter pad electrodes connected to a grounding potential are connected to the backside electrode through feedthrough electrodes penetrating the semiconductor substrate in a thickness direction.
摘要翻译：公开了一种半导体器件，其中连接到有源区，集电极和基极焊盘电极的发射极焊盘电极形成在半导体衬底的表面上。此外，在半导体衬底的背面形成有背面电极。此外，连接到接地电位的发射极焊盘电极通过穿过半导体衬底的厚度方向的穿通电极而连接到背面电极。

2. 发明申请

US20060220178A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060220178A1
公开(公告)日：2006-10-05
申请号：US11392802
申请日：2006-03-28
申请人： Hirotoshi Kubo , Yukari Shirahata , Shigehito Matsumoto , Masamichi Yamamuro , Koujiro Kameyama , Mitsuo Umemoto
发明人： Hirotoshi Kubo , Yukari Shirahata , Shigehito Matsumoto , Masamichi Yamamuro , Koujiro Kameyama , Mitsuo Umemoto
IPC分类号： H01L29/00
CPC分类号： H01L29/7322 , H01L23/3128 , H01L23/481 , H01L23/4824 , H01L23/4951 , H01L23/49562 , H01L24/05 , H01L24/06 , H01L24/17 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/91 , H01L29/1004 , H01L29/41708 , H01L29/66272 , H01L2224/0401 , H01L2224/04042 , H01L2224/05556 , H01L2224/05624 , H01L2224/05647 , H01L2224/05684 , H01L2224/13099 , H01L2224/32225 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/0781 , H01L2924/12033 , H01L2924/12036 , H01L2924/12041 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/351 , H01L2924/00012 , H01L2924/00 , H01L2224/45099
摘要： Disclosed is a semiconductor device in which emitter pad electrodes connected to an active region, collector and base pad electrodes are formed on a surface of a semiconductor substrate. Furthermore, on a back surface of the semiconductor substrate, a backside electrode is formed. Moreover, the emitter pad electrodes connected to a grounding potential are connected to the backside electrode through feedthrough electrodes penetrating the semiconductor substrate in a thickness direction.
摘要翻译：公开了一种半导体器件，其中连接到有源区，集电极和基极焊盘电极的发射极焊盘电极形成在半导体衬底的表面上。此外，在半导体衬底的背面形成有背面电极。此外，连接到接地电位的发射极焊盘电极通过穿过半导体衬底的厚度方向的穿通电极而连接到背面电极。

3. 发明授权

US08076755B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08076755B2
公开(公告)日：2011-12-13
申请号：US12134861
申请日：2008-06-06
申请人： Mitsuo Umemoto , Shigehito Matsumoto , Hirotoshi Kubo , Yukari Shirahata , Masamichi Yamamuro , Koujiro Kameyama
发明人： Mitsuo Umemoto , Shigehito Matsumoto , Hirotoshi Kubo , Yukari Shirahata , Masamichi Yamamuro , Koujiro Kameyama
IPC分类号： H01L29/66
CPC分类号： H01L29/7322 , H01L23/3128 , H01L23/481 , H01L23/4824 , H01L23/4951 , H01L23/49562 , H01L24/05 , H01L24/06 , H01L24/17 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/91 , H01L29/1004 , H01L29/41708 , H01L29/66272 , H01L2224/0401 , H01L2224/04042 , H01L2224/05556 , H01L2224/05624 , H01L2224/05647 , H01L2224/05684 , H01L2224/13099 , H01L2224/32225 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/0781 , H01L2924/12033 , H01L2924/12036 , H01L2924/12041 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/351 , H01L2924/00012 , H01L2924/00 , H01L2224/45099
摘要： Disclosed is a semiconductor device in which emitter pad electrodes connected to an active region, collector and base pad electrodes are formed on a surface of a semiconductor substrate. Furthermore, on a back surface of the semiconductor substrate, a backside electrode is formed. Moreover, the emitter pad electrodes connected to a grounding potential are connected to the backside electrode through feedthrough electrodes penetrating the semiconductor substrate in a thickness direction.
摘要翻译：公开了一种半导体器件，其中连接到有源区，集电极和基极焊盘电极的发射极焊盘电极形成在半导体衬底的表面上。此外，在半导体衬底的背面形成有背面电极。此外，连接到接地电位的发射极焊盘电极通过穿过半导体衬底的厚度方向的穿通电极而连接到背面电极。

4. 发明授权

US07397128B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07397128B2
公开(公告)日：2008-07-08
申请号：US11392802
申请日：2006-03-28
申请人： Hirotoshi Kubo , Yukari Shirahata , Shigehito Matsumoto , Masamichi Yamamuro , Koujiro Kameyama , Mitsuo Umemoto
发明人： Hirotoshi Kubo , Yukari Shirahata , Shigehito Matsumoto , Masamichi Yamamuro , Koujiro Kameyama , Mitsuo Umemoto
IPC分类号： H01L23/48
CPC分类号： H01L29/7322 , H01L23/3128 , H01L23/481 , H01L23/4824 , H01L23/4951 , H01L23/49562 , H01L24/05 , H01L24/06 , H01L24/17 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/91 , H01L29/1004 , H01L29/41708 , H01L29/66272 , H01L2224/0401 , H01L2224/04042 , H01L2224/05556 , H01L2224/05624 , H01L2224/05647 , H01L2224/05684 , H01L2224/13099 , H01L2224/32225 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/0781 , H01L2924/12033 , H01L2924/12036 , H01L2924/12041 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/351 , H01L2924/00012 , H01L2924/00 , H01L2224/45099
摘要： Disclosed is a semiconductor device in which emitter pad electrodes connected to an active region, collector and base pad electrodes are formed on a surface of a semiconductor substrate. Furthermore, on a back surface of the semiconductor substrate, a backside electrode is formed. Moreover, the emitter pad electrodes connected to a grounding potential are connected to the backside electrode through feedthrough electrodes penetrating the semiconductor substrate in a thickness direction.
摘要翻译：公开了一种半导体器件，其中连接到有源区，集电极和基极焊盘电极的发射极焊盘电极形成在半导体衬底的表面上。此外，在半导体衬底的背面形成有背面电极。此外，连接到接地电位的发射极焊盘电极通过穿过半导体衬底的厚度方向的穿通电极而连接到背面电极。

5. 发明申请

US20050167785A1 Semiconductor device and manufacturing method thereof 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050167785A1
公开(公告)日：2005-08-04
申请号：US11024225
申请日：2004-12-29
申请人： Hisaaki Tominaga , Keita Odajima , Shigehito Matsumoto , Masamichi Yamamuro
发明人： Hisaaki Tominaga , Keita Odajima , Shigehito Matsumoto , Masamichi Yamamuro
IPC分类号： H01L29/72 , H01L21/331 , H01L29/08 , H01L29/732 , H01L29/00
CPC分类号： H01L29/66287 , H01L29/0821 , H01L29/7322
摘要： In a bipolar transistor, an SIC layer is provided right under a genuine base region in order to suppress the Kirk effect and improve fT characteristic by thinning the film of the genuine base region. The higher the concentration of impurities in the SIC layer, the bigger the effect. When the impurity concentration of the SIC layer is high, the VCEO deteriorates so that the fT characteristic improvement and the Kirk effect suppression are in a trade off relationship with the VCEO. A second SIC layer is provided right under the genuine base region and in contact therewith, and a first SIC layer with a higher impurity concentration than the second SIC layer is formed right under the second SIC layer. The first SIC layer narrows the collector width and suppresses the Kirk effect whereas, the second SIC layer makes it possible to improve fT characteristic by cutting a lower edge of the genuine base region. Two SIC layers having varying depths can be formed in one heat treatment by using in the first SIC layer impurities that have a larger diffusion coefficient than the impurities of the second SIC layer.
摘要翻译：在双极晶体管中，SIC层设置在真正的基极区域的正下方，以抑制Kirk效应，并且通过使真正的基极区域的膜变薄来提高fT特性。 SIC层杂质浓度越高，效果越好。当SIC层的杂质浓度高时，VCEO劣化，使得fT特性改善和Kirk效应抑制与VCEO有折衷关系。第二SIC层设置在真正的基底区域正下方并与之接触，并且在第二SIC层的正下方形成具有比第二SIC层更高的杂质浓度的第一SIC层。第一个SIC层缩小了收集器的宽度并抑制了柯克效应，而第二个SIC层可以通过切割真正的基底区域的下边缘来提高fT特性。通过在第一SIC层中使用具有比第二SIC层的杂质更大的扩散系数的杂质，可以在一个热处理中形成具有不同深度的两个SIC层。

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