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1. 发明授权

US4789786A Method of projecting photoelectron image 失效
标题翻译：投影光电子图像的方法
公开(公告)号：US4789786A
公开(公告)日：1988-12-06
申请号：US144275
申请日：1988-01-15
申请人： Hiroshi Yasuda , Ichiro Honjo
发明人： Hiroshi Yasuda , Ichiro Honjo
IPC分类号： G03F7/20 , H01J37/317 , H01L21/30
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/2037 , H01J37/3175 , H01J2237/31779
摘要： A method for projecting a photelectron image includes providing a mask substrate, and selectively contacting a layer which lowers the work function of the mask substrate thereto. Photoelectrons are emitted from the contacted portion.
摘要翻译：用于投影光电子图像的方法包括提供掩模基板，并且选择性地接触降低掩模基板的功函数的层。光电子从被接触的部分发射。

2. 发明授权

US06188167B1 Micro electron beam source and a fabrication process thereof 失效
标题翻译：微电子束源及其制造方法
公开(公告)号：US06188167B1
公开(公告)日：2001-02-13
申请号：US08979620
申请日：1997-11-28
申请人： Yasuhiro Endo , Shunji Goto , Ichiro Honjo
发明人： Yasuhiro Endo , Shunji Goto , Ichiro Honjo
IPC分类号： H01J102
CPC分类号： H01J3/022 , H01J9/025
摘要： A method for fabricating a micro-field emission gun including the steps of providing an insulator slab, formed with a penetrating hole acting as a passage of an electron beam, upon a gate electrode of the micro-field emission gun, such that the penetrating hole is aligned with an emitter of the micro-field emission gun, bonding an insulator slab upon the gate electrode by means of an anodic bonding process, and providing an acceleration electrode on the insulator slab such that the acceleration electrode covers a surface of said insulator slab facing away from said gate electrode, except for a passage of the electron beam.
摘要翻译：一种制造微场发射枪的方法，包括以下步骤：在微场发射枪的栅极上提供形成有作为电子束通过的穿透孔的绝缘体板，使得穿透孔与微场发射枪的发射极对准，通过阳极接合工艺将绝缘体板结合在栅电极上，并在绝缘体板上提供加速电极，使得加速电极覆盖所述绝缘体板的表面除了电子束的通过之外，其背离所述栅电极。

3. 发明授权

US5430292A Pattern inspection apparatus and electron beam apparatus 失效
标题翻译：图案检查装置和电子束装置
公开(公告)号：US5430292A
公开(公告)日：1995-07-04
申请号：US134860
申请日：1993-10-12
申请人： Ichiro Honjo , Kenji Sugishima , Masaki Yamabe
发明人： Ichiro Honjo , Kenji Sugishima , Masaki Yamabe
IPC分类号： G03F1/00 , H01J37/244 , H01J37/30 , H01J37/29
CPC分类号： G03F1/86 , H01J37/244 , H01J37/3005 , H01J2237/221 , H01J2237/2441 , H01J2237/24435 , H01J2237/2447 , H01J2237/24495 , H01J2237/24592 , H01J2237/2817
摘要： A pattern inspection apparatus is designed to quickly and accurately perform an inspection of an inspecting sample, such as masks, wafers or so forth by irradiating electron beams onto the inspection sample and detecting a secondary electron or a backscattered electron reflected from the surface of the inspecting sample or a transmission electron passing through the inspection sample. The pattern inspection apparatus includes an electron beam generating means including at least one electron gun for generating at least one electron beam irradiating on the surface of the inspecting sample, a movable means for supporting the inspecting sample, a detecting means including a plurality of electron detecting elements for detecting electrons containing information related to the construction of the inspection sample and a detection signal processing means for processing simultaneously or in parallel formation the outputs of the electron detecting elements of the detecting means. Also, when a plurality of electron beams are used for simultaneous irradiation of the inspecting sample, the pattern inspection apparatus is provided a mechanism for avoiding interference of a reflected beam of the adjacent electron beam.
摘要翻译：图案检查装置被设计为通过将电子束照射到检查样品上并检测从检查表面反射的二次电子或反向散射电子，来快速且准确地对检查样品进行检查，例如掩模，晶片等。样品或通过检查样品的透射电子。图案检查装置包括：电子束产生装置，包括至少一个电子枪，用于产生照射在检查样品的表面上的至少一个电子束;支撑检查样品的可移动装置;检测装置，包括多个电子检测用于检测包含与检查样品的构造相关的信息的电子的元件和用于同时或并行地形成检测装置的电子检测元件的输出的检测信号处理装置。此外，当使用多个电子束同时照射检查样本时，图案检查装置被提供用于避免相邻电子束的反射光束的干涉的机构。

4. 发明授权

US5731228A Method for making micro electron beam source 失效
标题翻译：制造微电子束源的方法
公开(公告)号：US5731228A
公开(公告)日：1998-03-24
申请号：US401511
申请日：1995-03-10
申请人： Yasuhiro Endo , Shunji Goto , Ichiro Honjo
发明人： Yasuhiro Endo , Shunji Goto , Ichiro Honjo
IPC分类号： H01J3/02 , H01J9/02 , H01L21/465
CPC分类号： H01J3/022 , H01J9/025
摘要： A method for fabricating a micro-field emission gun including the steps of providing an insulator slab, formed with a penetrating hole acting as a passage of an electron beam, upon a gate electrode of the micro-field emission gun, such that the penetrating hole is aligned with an emitter of the micro-field gun, bonding an insulator slab upon the gate electrode by means of an anodic bonding process, and providing an acceleration electrode on the insulator slab such that the acceleration electrode covers a surface of said insulator slab facing away from said gate electrode, except for a passage of the electron beam.
摘要翻译：一种制造微场发射枪的方法，包括以下步骤：在微场发射枪的栅极上提供形成有作为电子束通过的穿透孔的绝缘体板，使得穿透孔与微场枪的发射极对准，通过阳极接合工艺将绝缘体板连接在栅电极上，并且在绝缘板上提供加速电极，使得加速电极覆盖所述绝缘体板的面对面远离所述栅电极，除了电子束的通过。

5. 发明授权

US5557105A Pattern inspection apparatus and electron beam apparatus 失效
标题翻译：图案检查装置和电子束装置
公开(公告)号：US5557105A
公开(公告)日：1996-09-17
申请号：US320377
申请日：1994-10-11
申请人： Ichiro Honjo , Kenji Sugishima , Masaki Yamabe
发明人： Ichiro Honjo , Kenji Sugishima , Masaki Yamabe
IPC分类号： H01J37/30 , H01J37/06 , H01J37/244
CPC分类号： H01J37/04 , H01J37/244 , H01J37/28 , H01J37/3007 , H01J2237/04924 , H01J2237/062 , H01J2237/0635 , H01J2237/1205 , H01J2237/1504 , H01J2237/1516 , H01J2237/153 , H01J2237/24455 , H01J2237/2447 , H01J2237/2448 , H01J2237/24495 , H01J2237/2817
摘要： A pattern inspection apparatus is designed to quickly and accurately perform an inspection of an inspection sample, such as a mask or a wafer or the like by irradiating electron beams onto the inspection sample and detecting secondary or backscattered electrons reflected from the surface of the inspection sample and/or transmitted electrons passing through the inspection sample. The pattern inspection apparatus includes an electron beam generator including at least one electron gun for generating at least one electron beam irradiating onto the surface of the inspection sample. A movable support is provided for supporting the inspection sample. The apparatus also includes a detector unit having a plurality of electron detecting elements for detecting electrons containing information related to the construction of the inspection sample and a detection signal processor for processing simultaneously or in parallel formation the outputs of the electron detecting elements of the detector. Also, when a plurality of electron beams are used for simultaneous irradiation of the inspection sample, the pattern inspection apparatus includes a mechanism for avoiding interference between the reflected electrons of the adjacent electron beams.
摘要翻译：图案检查装置被设计为通过将电子束照射到检查样品上并检测从检查样品的表面反射的次级或反向散射电子来快速且准确地执行诸如掩模或晶片等的检查样本的检查和/或穿过检查样品的透射电子。图案检查装置包括电子束发生器，其包括至少一个电子枪，用于产生照射到检查样品表面上的至少一个电子束。提供用于支撑检查样品的可移动支撑件。该装置还包括具有多个电子检测元件的检测器单元，用于检测包含与检查样本的结构有关的信息的电子;以及检测信号处理器，用于同时或并行地形成检测器的电子检测元件的输出。此外，当使用多个电子束同时照射检查样本时，图案检查装置包括用于避免相邻电子束的反射电子之间的干涉的机构。

6. 发明授权

US6130429A Miniaturized secondary electron detector 失效
标题翻译：小型二次电子探测器
公开(公告)号：US6130429A
公开(公告)日：2000-10-10
申请号：US198572
申请日：1998-11-23
申请人： Takayuki Ambe , Ichiro Honjo
发明人： Takayuki Ambe , Ichiro Honjo
IPC分类号： H01J37/244
CPC分类号： H01J37/244 , H01J2237/2444 , H01J2237/2448
摘要： To miniaturize a secondary-electron detector, a ring-shaped secondary-electron emissive material layer 44A is formed on a ring-shaped base 41 having a round hole 41a, via a ring-shaped insulating layer 42A and a ring-shaped high resistance layer 43A. Similarly, a ring-shaped secondary-electron emissive material layer 44B is formed on a ring-shaped base 33 having a round hole 33a, via a ring-shaped insulating layer 42B and a ring-shaped high resistance layer 43B. A arc-shaped multiplied-electron collecting electrode 461 is joined between the insulating layers 42A and 42B outside the secondary-electron emissive material layer 44B. A porous secondary-electron multiplication substance may be filled between opposed bases instead of the secondary-electron emissive material layers 44A and 44B, and an optical fiber coated with phosphor may be used instead of the electrode 461.
摘要翻译：为了使二次电子检测器小型化，环状二次电子发射材料层44A通过环形绝缘层42A和环形高电阻层形成在具有圆孔41a的环形基座41上 43A。类似地，通过环形绝缘层42B和环形高电阻层43B，在具有圆孔33a的环形基座33上形成环形二次电子发射材料层44B。在二次电子发射材料层44B外部的绝缘层42A和42B之间连接有弧形的倍增电子收集电极461。多孔二次电子倍增物质可以填充在相对的基底之间而不是二次电子发射材料层44A和44B，并且可以使用涂覆有磷光体的光纤代替电极461。

7. 发明授权

US5384463A Pattern inspection apparatus and electron beam apparatus 失效
标题翻译：图案检查装置和电子束装置
公开(公告)号：US5384463A
公开(公告)日：1995-01-24
申请号：US238349
申请日：1994-05-05
申请人： Ichiro Honjo , Kenji Sugishima , Masaki Yamabe
发明人： Ichiro Honjo , Kenji Sugishima , Masaki Yamabe
IPC分类号： G03F1/86 , H01J37/244 , H01J37/30 , H01J37/06
CPC分类号： G03F1/86 , H01J37/244 , H01J37/3005 , H01J2237/221 , H01J2237/2441 , H01J2237/24435 , H01J2237/2447 , H01J2237/24495 , H01J2237/24592 , H01J2237/2817
摘要： A pattern inspection apparatus is designed to quickly and accurately perform an inspection of an inspection sample, such as a mask or a wafer or the like by irradiating electron beams onto the inspection sample and detecting secondary or backscattered electrons reflected from the surface of the inspection sample and/or transmitted electrons passing through the inspection sample. The pattern inspection apparatus includes an electron beam generator including at least one electron gun for generating at least one electron beam irradiating onto the surface of the inspection sample. A movable support is provided for supporting the inspection sample. The apparatus also includes a detector unit having a plurality of electron detecting elements for detecting electrons containing information related to the construction of the inspection sample and a detection signal processor for processing simultaneously or in parallel formation the outputs of the electron detecting elements of the detector. Also, when a plurality of electron beams are used for simultaneous irradiation of the inspection sample, the pattern inspection apparatus is provided with a mechanism for avoiding interference between the reflected electrons of the adjacent electron beams.
摘要翻译：图案检查装置被设计为通过将电子束照射到检查样品上并检测从检查样品的表面反射的次级或反向散射电子来快速且准确地执行诸如掩模或晶片等的检查样本的检查和/或穿过检查样品的透射电子。图案检查装置包括电子束发生器，其包括至少一个电子枪，用于产生照射到检查样品表面上的至少一个电子束。提供用于支撑检查样品的可移动支撑件。该装置还包括具有多个电子检测元件的检测器单元，用于检测包含与检查样本的结构有关的信息的电子;以及检测信号处理器，用于同时或并行地形成检测器的电子检测元件的输出。此外，当使用多个电子束同时照射检查样本时，图案检查装置设置有用于避免相邻电子束的反射电子之间的干涉的机构。

8. 发明授权

US4748646A X-ray lithography system 失效
标题翻译： X射线光刻系统
公开(公告)号：US4748646A
公开(公告)日：1988-05-31
申请号：US27553
申请日：1987-03-18
申请人： Toshihiko Osada , Ichiro Honjo , Kenji Sugishima
发明人： Toshihiko Osada , Ichiro Honjo , Kenji Sugishima
IPC分类号： G01N23/00 , G03F7/20 , G21K1/06 , G21K5/00 , G21K5/02 , H01J35/00 , H01L21/027 , H05G1/00 , G21K5/10
CPC分类号： G03F7/70075 , G03F7/70808
摘要： An X-ray lithography system, in which an X-ray beam is separated from synchrotron radiation beams and reflected by a scanning mirror which vertically scans the reflected X-ray beam. The X-ray is irradiated into an exposure chamber via a beryllium window, which is vertically oscillated in such a manner that the beryllium window is shifted up and down in synchronization with the scanning operation of the X-ray beam.
摘要翻译：一种X射线光刻系统，其中X射线束与同步加速器辐射束分离并由扫描反射镜反射，该扫描镜垂直扫描反射的X射线束。 X射线通过铍窗被照射到曝光室中，铍窗垂直振荡，使得铍窗与X射线束的扫描操作同步地上下移动。

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