专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

2. 发明申请

US20080237863A1 Semiconductor device and manufacturing method of semiconductor device 有权
标题翻译：半导体器件及半导体器件的制造方法
公开(公告)号：US20080237863A1
公开(公告)日：2008-10-02
申请号：US12081818
申请日：2008-04-22
申请人： Hiroshi Toyoda , Mitsuhiro Nakao , Masahiko Hasunuma , Hisashi Kaneko , Atsuko Sakata , Toshiaki Komukai
发明人： Hiroshi Toyoda , Mitsuhiro Nakao , Masahiko Hasunuma , Hisashi Kaneko , Atsuko Sakata , Toshiaki Komukai
IPC分类号： H01L23/49
CPC分类号： H01L21/76846 , H01L21/76834 , H01L21/76849 , H01L21/76858 , H01L21/76886 , H01L21/76888 , H01L22/32 , H01L23/53233 , H01L23/53238 , H01L23/53295 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/0392 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/05017 , H01L2224/05082 , H01L2224/05083 , H01L2224/05093 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05546 , H01L2224/05552 , H01L2224/05557 , H01L2224/05558 , H01L2224/05559 , H01L2224/05567 , H01L2224/05605 , H01L2224/05611 , H01L2224/05613 , H01L2224/05616 , H01L2224/0562 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/13099 , H01L2224/13105 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/1312 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/45105 , H01L2224/45109 , H01L2224/45111 , H01L2224/45113 , H01L2224/45116 , H01L2224/4512 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/4807 , H01L2224/48453 , H01L2224/48463 , H01L2224/48505 , H01L2224/48611 , H01L2224/48616 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48711 , H01L2224/48716 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48799 , H01L2224/48805 , H01L2224/48811 , H01L2224/48813 , H01L2224/48816 , H01L2224/4882 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/85375 , H01L2924/0002 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01327 , H01L2924/04953 , H01L2924/05042 , H01L2924/10253 , H01L2924/12042 , H01L2924/00014 , H01L2924/04941 , H01L2224/05609 , H01L2924/00 , H01L2224/48744 , H01L2224/48713 , H01L2224/48705 , H01L2224/4872 , H01L2224/48605 , H01L2224/48613 , H01L2224/4862 , H01L2924/00015
摘要： A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.
摘要翻译：一种半导体器件，其由形成在半导体衬底上的铜布线层构成，该电极层与铜布线层电连接并具有合金，所述焊接电极层含有铜和氧化倾向高于铜的金属形成为延伸到底表面，并且具有延伸到焊盘电极层的开口的绝缘保护膜。

3. 发明授权

US06727593B2 Semiconductor device with improved bonding 有权
标题翻译：具有改善接合的半导体器件
公开(公告)号：US06727593B2
公开(公告)日：2004-04-27
申请号：US10084065
申请日：2002-02-28
申请人： Hiroshi Toyoda , Mitsuhiro Nakao , Masahiko Hasunuma , Hisashi Kaneko , Atsuko Sakata , Toshiaki Komukai
发明人： Hiroshi Toyoda , Mitsuhiro Nakao , Masahiko Hasunuma , Hisashi Kaneko , Atsuko Sakata , Toshiaki Komukai
IPC分类号： H01L2348
CPC分类号： H01L21/76846 , H01L21/76834 , H01L21/76849 , H01L21/76858 , H01L21/76886 , H01L21/76888 , H01L22/32 , H01L23/53233 , H01L23/53238 , H01L23/53295 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/0392 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/05017 , H01L2224/05082 , H01L2224/05083 , H01L2224/05093 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05546 , H01L2224/05552 , H01L2224/05557 , H01L2224/05558 , H01L2224/05559 , H01L2224/05567 , H01L2224/05605 , H01L2224/05611 , H01L2224/05613 , H01L2224/05616 , H01L2224/0562 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/13099 , H01L2224/13105 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/1312 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/45105 , H01L2224/45109 , H01L2224/45111 , H01L2224/45113 , H01L2224/45116 , H01L2224/4512 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/4807 , H01L2224/48453 , H01L2224/48463 , H01L2224/48505 , H01L2224/48611 , H01L2224/48616 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48711 , H01L2224/48716 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48799 , H01L2224/48805 , H01L2224/48811 , H01L2224/48813 , H01L2224/48816 , H01L2224/4882 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/85375 , H01L2924/0002 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01327 , H01L2924/04953 , H01L2924/05042 , H01L2924/10253 , H01L2924/12042 , H01L2924/00014 , H01L2924/04941 , H01L2224/05609 , H01L2924/00 , H01L2224/48744 , H01L2224/48713 , H01L2224/48705 , H01L2224/4872 , H01L2224/48605 , H01L2224/48613 , H01L2224/4862 , H01L2924/00015
摘要： A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.
摘要翻译：一种半导体器件，其由形成在半导体衬底上的铜布线层构成，该电极层与铜布线层电连接并具有合金，所述焊接电极层含有铜和氧化倾向高于铜的金属形成为延伸到底表面，并且具有延伸到焊盘电极层的开口的绝缘保护膜。

4. 发明授权

US07675183B2 Semiconductor device including an insulating film and insulating pillars and manufacturing method of the semiconductor device 有权
标题翻译：包括绝缘膜和绝缘柱的半导体器件和半导体器件的制造方法
公开(公告)号：US07675183B2
公开(公告)日：2010-03-09
申请号：US12081818
申请日：2008-04-22
申请人： Hiroshi Toyoda , Mitsuhiro Nakao , Masahiko Hasunuma , Hisashi Kaneko , Atsuko Sakata , Toshiaki Komukai
发明人： Hiroshi Toyoda , Mitsuhiro Nakao , Masahiko Hasunuma , Hisashi Kaneko , Atsuko Sakata , Toshiaki Komukai
IPC分类号： H01L23/48 , H01L23/52
CPC分类号： H01L21/76846 , H01L21/76834 , H01L21/76849 , H01L21/76858 , H01L21/76886 , H01L21/76888 , H01L22/32 , H01L23/53233 , H01L23/53238 , H01L23/53295 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/0392 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/05017 , H01L2224/05082 , H01L2224/05083 , H01L2224/05093 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05546 , H01L2224/05552 , H01L2224/05557 , H01L2224/05558 , H01L2224/05559 , H01L2224/05567 , H01L2224/05605 , H01L2224/05611 , H01L2224/05613 , H01L2224/05616 , H01L2224/0562 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/13099 , H01L2224/13105 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/1312 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/45105 , H01L2224/45109 , H01L2224/45111 , H01L2224/45113 , H01L2224/45116 , H01L2224/4512 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/4807 , H01L2224/48453 , H01L2224/48463 , H01L2224/48505 , H01L2224/48611 , H01L2224/48616 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48711 , H01L2224/48716 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48799 , H01L2224/48805 , H01L2224/48811 , H01L2224/48813 , H01L2224/48816 , H01L2224/4882 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/85375 , H01L2924/0002 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01327 , H01L2924/04953 , H01L2924/05042 , H01L2924/10253 , H01L2924/12042 , H01L2924/00014 , H01L2924/04941 , H01L2224/05609 , H01L2924/00 , H01L2224/48744 , H01L2224/48713 , H01L2224/48705 , H01L2224/4872 , H01L2224/48605 , H01L2224/48613 , H01L2224/4862 , H01L2924/00015
摘要： A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.
摘要翻译：一种半导体器件，其由形成在半导体衬底上的铜布线层构成，该电极层与铜布线层电连接并具有合金，所述焊接电极层含有铜和氧化倾向高于铜的金属形成为延伸到底表面，并且具有延伸到焊盘电极层的开口的绝缘保护膜。

5. 发明申请

US20050191817A1 Semiconductor device and method of fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050191817A1
公开(公告)日：2005-09-01
申请号：US11066227
申请日：2005-02-25
申请人： Toshiaki Komukai , Hideaki Harakawa
发明人： Toshiaki Komukai , Hideaki Harakawa
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/336 , H01L29/423 , H01L29/49 , H01L29/78
CPC分类号： H01L29/4983 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/6659
摘要： According to an aspect of the invention, there is provided a semiconductor device comprising a semiconductor substrate, a gate electrode formed on the substrate via a gate insulating film and containing silicon, an insulating offset spacer formed on a side surface of the gate electrode and having an upper surface lower than an upper surface of the gate electrode, an insulating sidewall spacer formed on an upper side surface of the gate electrode and on a side surface of the offset spacer by using a material different from the offset spacer, a lightly doped impurity diffusion layer formed in the semiconductor substrate so as to sandwich the gate electrode, a heavily doped impurity diffusion layer formed in the semiconductor substrate in a position deeper than the lightly doped impurity diffusion layer, so as to sandwich the gate electrode and sidewall spacer, and a silicide film formed on the gate electrode.
摘要翻译：根据本发明的一个方面，提供了一种半导体器件，其包括半导体衬底，通过栅极绝缘膜形成在衬底上并含有硅的栅电极，形成在栅电极的侧表面上的绝缘偏移间隔物，并且具有通过使用与偏移间隔物不同的材料，形成在栅电极的上侧表面上且在偏置间隔物的侧表面上的绝缘侧壁间隔物，轻掺杂杂质扩散层，形成在半导体衬底中以将栅电极夹在中间，形成在半导体衬底中的比掺杂稀土杂质扩散层更深的位置的重掺杂杂质扩散层，以夹持栅电极和侧壁间隔，以及形成在栅电极上的硅化物膜。

6. 发明授权

US07858465B2 Semiconductor device comprising transistor and capacitor and method of manufacturing the same 失效
标题翻译：包括晶体管和电容器的半导体器件及其制造方法
公开(公告)号：US07858465B2
公开(公告)日：2010-12-28
申请号：US12031297
申请日：2008-02-14
申请人： Toshiaki Komukai , Hideaki Harakawa
发明人： Toshiaki Komukai , Hideaki Harakawa
IPC分类号： H01L21/8238
CPC分类号： H01L27/0629 , H01L28/60 , H01L29/7833
摘要： A semiconductor device according to an embodiment of the present invention includes: a transistor including, a gate insulator formed of an insulating layer deposited on a substrate, and a gate electrode formed of an electrode layer deposited on the insulating layer; a capacitor including, a first capacitor electrode formed of the electrode layer, a first capacitor insulator formed on the first capacitor electrode, a second capacitor electrode formed on the first capacitor insulator, a second capacitor insulator formed on the second capacitor electrode, and a third capacitor electrode formed on the second capacitor insulator; and line patterns which are in contact with a contact plug for the transistor, a contact plug for the first capacitor electrode, a contact plug for the second capacitor electrode, and the third capacitor electrode.
摘要翻译：根据本发明实施例的半导体器件包括：晶体管，包括由沉积在衬底上的绝缘层形成的栅极绝缘体和由沉积在绝缘层上的电极层形成的栅电极; 电容器，包括由电极层形成的第一电容器电极，形成在第一电容器电极上的第一电容器绝缘体，形成在第一电容器绝缘体上的第二电容器电极，形成在第二电容器电极上的第二电容器绝缘体，以及第三电容器绝缘体电容器电极形成在第二电容绝缘体上; 以及与晶体管的接触插塞接触的线路图案，第一电容器电极的接触插头，第二电容器电极的接触插塞和第三电容器电极。

7. 发明申请

US20060270131A1 Method for manufacturing semiconductor device 失效
公开(公告)号：US20060270131A1
公开(公告)日：2006-11-30
申请号：US11418071
申请日：2006-05-05
申请人： Toshiaki Komukai , Hideaki Harakawa
发明人： Toshiaki Komukai , Hideaki Harakawa
IPC分类号： H01L21/338
CPC分类号： H01L21/76224 , H01L21/31144 , H01L21/32139 , H01L21/823437
摘要： A method of manufacturing a semiconductor device includes depositing a mask material to be patterned into a desired target pattern on an underlying material; patterning the mask material into a preparatory pattern including the target pattern and being larger than the target pattern; patterning the mask material into the target pattern; and processing the underlying material by using the mask material, which has been patterned, as a mask.

8. 发明授权

US07479433B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07479433B2
公开(公告)日：2009-01-20
申请号：US11418071
申请日：2006-05-05
申请人： Toshiaki Komukai , Hideaki Harakawa
发明人： Toshiaki Komukai , Hideaki Harakawa
IPC分类号： H01L21/336
CPC分类号： H01L21/76224 , H01L21/31144 , H01L21/32139 , H01L21/823437
摘要： A method of manufacturing a semiconductor device includes depositing a mask material to be patterned into a desired target pattern on an underlying material; patterning the mask material into a preparatory pattern including the target pattern and being larger than the target pattern; patterning the mask material into the target pattern; and processing the underlying material by using the mask material, which has been patterned, as a mask.
摘要翻译：制造半导体器件的方法包括：将待图案化的掩模材料沉积在下面的材料上的期望的目标图案中; 将掩模材料图案化成包括目标图案并且大于目标图案的预备图案; 将掩模材料图案化成目标图案; 并通过使用图案化的掩模材料作为掩模来处理下面的材料。

9. 发明申请

US20070120185A1 Semiconductor device manufacturing method and semiconductor device 审中-公开
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US20070120185A1
公开(公告)日：2007-05-31
申请号：US11447880
申请日：2006-06-07
申请人： Toshiaki Komukai , Hideaki Harakawa
发明人： Toshiaki Komukai , Hideaki Harakawa
IPC分类号： H01L29/76
CPC分类号： H01L21/823835 , H01L21/823814 , H01L21/823878
摘要： A method for manufacturing a semiconductor device includes forming an isolation region on a semiconductor substrate; forming an impurity diffusion layer in a region which includes an end of an active area adjacent to the isolation region; depositing a metal film on the semiconductor substrate; removing at least part of the metal film on the isolation region; and subjecting the metal film and the semiconductor substrate to a heat treatment, thereby forming a silicide film on the impurity diffusion layer in a self-aligned fashion.
摘要翻译：一种制造半导体器件的方法包括：在半导体衬底上形成隔离区; 在包括与隔离区相邻的有源区的端部的区域中形成杂质扩散层; 在半导体衬底上沉积金属膜; 去除所述隔离区域上的所述金属膜的至少一部分; 并对金属膜和半导体衬底进行热处理，从而以自对准的方式在杂质扩散层上形成硅化物膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式