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    • 1. 发明授权
    • Amorphous magnetic thin film and plane magnetic element using same
    • 非晶磁性薄膜和使用其的平面磁性元件
    • US5522946A
    • 1996-06-04
    • US266757
    • 1994-06-28
    • Hiroshi TomitaTetsuo InoueHiromi FukeToshiro SatoTetsuhiko Mizoguchi
    • Hiroshi TomitaTetsuo InoueHiromi FukeToshiro SatoTetsuhiko Mizoguchi
    • C22C45/00H01F10/12H01F10/13H01F10/16H01F19/00H01F30/10H01F1/153
    • H01F10/131H01F10/132H01F30/10
    • An amorphous magnetic thin film possesses as at least part of a thin film forming area a microstructure composed of a first amorphous phase containing at least either of iron and cobalt and bearing magnetism and a second amorphous phase disposed round the first amorphous phase and containing boron and at least one element selected from among the elements of the 4B Group in the Periodic Table of Elements and exhibits uniaxial magnetic anisotropy in the plane of film. The amorphous magnetic thin film possesses soft magnetism concurrently satisfying high saturation magnetization and high resistivity and, at the same time, easily acquires high frequency permeability by applying magnetic field in the hard axis of magnetization. Use of these amorphous magnetic thin films for plane magnetic elements permits the plane magnetic elements to be miniaturized and to be endowed with exalted performance. The amorphous magnetic thin film possesses a composition substantially represented by the formula:(Fe.sub.1-x Co.sub.x).sub.1-y (B.sub.1-z X.sub.z).sub.y(wherein X stands for at least one element selected from among the 4B Group elements and x, y, and z stand for numerals satisfying the expressions, 0
    • 无定形磁性薄膜至少具有薄膜形成区域的至少一部分,该微结构由包含铁和钴中的至少一种和承载磁性的第一非晶相组成,而第二非晶相设置在第一非晶相周围并含有硼和 选自元素周期表4B族的元素中的至少一种元素,并且在膜的平面中显示单轴磁各向异性。 非晶磁性薄膜具有同时满足高饱和磁化强度和高电阻率的软磁性,同时通过在硬磁化轴上施加磁场容易地获得高频磁导率。 这些非晶磁性薄膜用于平面磁性元件允许平面磁性元件小型化并赋予高级性能。 非晶磁性薄膜具有基本上由式(Fe1-xCox)1-y(B1-zXz)y表示的组成(其中X表示选自4B族元素中的至少一种元素,x,y和 z表示满足表达式0
    • 6. 发明授权
    • Distributed constant element using a magnetic thin film
    • 使用磁性薄膜的分布常数元素
    • US06414564B1
    • 2002-07-02
    • US09630542
    • 2000-08-01
    • Tetsuhiko MizoguchiTetsuo InoueToshirou Sato
    • Tetsuhiko MizoguchiTetsuo InoueToshirou Sato
    • H03H738
    • H01P1/215G01R33/028
    • The present invention is directed to a magnetic thin-film device whose operating frequency band ranges from several millihertz (MHz) to several gigahertz (GHz) and which is used as an inductor for a switching power supply, a noise filter, a reception circuit for receiving a quasi-microwave and a magnetic sensor. In this device, uniaxial magnetic anisotropy is guided to a magnetic layer, and the magnetic layer is sandwiched between dielectric layers to form a propagation path of electromagnetic wave. A microstrip line is provided on the top surface of the propagation path, while an insulative underlying substrate is formed on the bottom surface thereof with a lower grounded conductor interposed therebetween. Thus, the wavelength of the propagation path can be shortened to miniaturize the device. The device is rapidly improved in characteristics and miniaturized further, resulting in reduction in manufacturing costs.
    • 本发明涉及一种磁性薄膜器件,其工作频带范围为几毫赫(MHz)至几千兆赫(GHz),用作开关电源的电感器,噪声滤波器,接收电路 接收准微波和磁传感器。 在该装置中,将单轴磁各向异性引导到磁性层,将磁性层夹在电介质层之间,形成电磁波的传播路径。 在传播路径的顶面上设置有微带线,而在其底面上形成绝缘性的下层基板,其间插有下接地导体。 因此,可以缩短传播路径的波长,使装置小型化。 该装置的特性迅速提高并进一步小型化,从而降低制造成本。