专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070182955A1 SUBSTRATE DEFECT INSPECTION METHOD, COMPUTER READABLE STORAGE MEDIUM, AND DEFECT INSPECTION APPARATUS 有权
标题翻译：基板缺陷检查方法，计算机可读存储介质和缺陷检查装置
公开(公告)号：US20070182955A1
公开(公告)日：2007-08-09
申请号：US11626028
申请日：2007-01-23
申请人： Hiroshi Tomita , Shinichi Shinozuka
发明人： Hiroshi Tomita , Shinichi Shinozuka
IPC分类号： G01N21/00
CPC分类号： G06T7/001 , G03F7/7065 , G06T2207/30148
摘要： In the present invention, data on a substrate image picked up by an image pickup unit is outputted to a difference calculation unit where a difference image from a normal substrate is calculated. A synthesis calculation unit calculates a synthesized image by rotating the difference image 360 degrees by every predetermined angle about the center of the substrate and synthesizing the images. A Zernike calculation unit digitizes the synthesized image by a Zernike polynomial and outputs a concentric circle component to a determination unit where the component is compared with a previously set threshold value, so that the presence or absence of a defect on the substrate is determined. The present invention can facilitate the determination of the presence or absence of a macro defect on the substrate and reduce the time required for the determination.
摘要翻译：在本发明中，由摄像单元拾取的基板图像上的数据被输出到差分计算单元，其中计算出与正常基板的差分图像。合成计算单元通过围绕基板的中心以预定的角度360度旋转差分图像来合成图像来计算合成图像。 Zernike计算单元通过Zernike多项式数字化合成图像，并将同心圆分量输出到确定单元，其中将分量与先前设置的阈值进行比较，从而确定基板上存在或不存在缺陷。本发明可以有助于确定基板上的宏观缺陷的存在或不存在，并且减少确定所需的时间。

2. 发明授权

US07867674B2 Substrate-processing apparatus, substrate-processing method, substrate-processing program, and computer-readable recording medium recorded with such program 有权
标题翻译：基板处理装置，基板处理方法，基板处理程序和记录有该程序的计算机可读记录介质
公开(公告)号：US07867674B2
公开(公告)日：2011-01-11
申请号：US12065829
申请日：2006-09-13
申请人： Michio Tanaka , Shinichi Shinozuka , Masahide Tadokoro , Kunie Ogata , Hiroshi Tomita , Ryoichi Uemura
发明人： Michio Tanaka , Shinichi Shinozuka , Masahide Tadokoro , Kunie Ogata , Hiroshi Tomita , Ryoichi Uemura
IPC分类号： G03C5/00 , G03F1/00 , H01L21/00
CPC分类号： G03F7/40 , G03F7/38
摘要： A pattern forming system 1 includes a checking apparatus 400 and a control section 500. The checking apparatus 400 is configured to measure and check a sidewall angle SWA of a resist pattern formed on a substrate W after a developing process. The control section 500 is configured to use a difference between a target value of the sidewall angle SWA of the resist pattern after the developing process and a check result of the sidewall angle SWA obtained by the checking apparatus 400, to set a process condition for a first heat process 71 to 74 or a second heat process 84 to 89 so as to cause the sidewall angle SWA to approximate the target value thereof after the developing process.
摘要翻译：图案形成系统1包括检查装置400和控制部500.检查装置400被配置为测量并检查在显影处理之后形成在基板W上的抗蚀剂图案的侧壁角度SWA。控制部500构成为使用显影处理后的抗蚀剂图案的侧壁角度SWA的目标值与由检查装置400获得的侧壁角度SWA的检查结果之间的差，来设定处理条件第一加热过程71至74或第二加热过程84至89，以便在显影过程之后使侧壁角度SWA接近其目标值。

3. 发明申请

US20090104548A1 SUBSTRATE-PROCESSING APPARATUS, SUBSTRATE-PROCESSING METHOD, SUBSTRATE-PROCESSING PROGRAM, AND COMPUTER-READABLE RECORDING MEDIUM RECORDED WITH SUCH PROGRAM 有权
标题翻译：基板处理设备，基板处理方法，基板处理程序以及使用此程序记录的计算机可读记录介质
公开(公告)号：US20090104548A1
公开(公告)日：2009-04-23
申请号：US12065829
申请日：2006-09-13
申请人： Michio Tanaka , Shinichi Shinozuka , Masahide Tadokoro , Kunie Ogata , Hiroshi Tomita , Ryoichi Uemura
发明人： Michio Tanaka , Shinichi Shinozuka , Masahide Tadokoro , Kunie Ogata , Hiroshi Tomita , Ryoichi Uemura
IPC分类号： G03F7/20 , G03B27/52
CPC分类号： G03F7/40 , G03F7/38
摘要： A pattern forming system 1 includes a checking apparatus 400 and a control section 500. The checking apparatus 400 is configured to measure and check a sidewall angle SWA of a resist pattern formed on a substrate W after a developing process. The control section 500 is configured to use a difference between a target value of the sidewall angle SWA of the resist pattern after the developing process and a check result of the sidewall angle SWA obtained by the checking apparatus 400, to set a process condition for a first heat process 71 to 74 or a second heat process 84 to 89 so as to cause the sidewall angle SWA to approximate the target value thereof after the developing process.
摘要翻译：图案形成系统1包括检查装置400和控制部500.检查装置400被配置为测量并检查在显影处理之后形成在基板W上的抗蚀剂图案的侧壁角度SWA。控制部500构成为使用显影处理后的抗蚀剂图案的侧壁角度SWA的目标值与由检查装置400获得的侧壁角度SWA的检查结果之间的差，来设定处理条件第一加热过程71至74或第二加热过程84至89，以便在显影过程之后使侧壁角度SWA接近其目标值。

4. 发明授权

US07411669B2 Substrate defect inspection method, computer readable storage medium, and defect inspection apparatus 有权
标题翻译：基板缺陷检查方法，计算机可读存储介质和缺陷检查装置
公开(公告)号：US07411669B2
公开(公告)日：2008-08-12
申请号：US11626028
申请日：2007-01-23
申请人： Hiroshi Tomita , Shinichi Shinozuka
发明人： Hiroshi Tomita , Shinichi Shinozuka
IPC分类号： G01N21/00 , G06K9/00
CPC分类号： G06T7/001 , G03F7/7065 , G06T2207/30148
摘要： In the present invention, data on a substrate image picked up by an image pickup unit is outputted to a difference calculation unit where a difference image from a normal substrate is calculated. A synthesis calculation unit calculates a synthesized image by rotating the difference image 360 degrees by every predetermined angle about the center of the substrate and synthesizing the images. A Zernike calculation unit digitizes the synthesized image by a Zernike polynomial and outputs a concentric circle component to a determination unit where the component is compared with a previously set threshold value, so that the presence or absence of a defect on the substrate is determined. The present invention can facilitate the determination of the presence or absence of a macro defect on the substrate and reduce the time required for the determination.
摘要翻译：在本发明中，由摄像单元拾取的基板图像上的数据被输出到差分计算单元，其中计算出与正常基板的差分图像。合成计算单元通过围绕基板的中心以预定的角度360度旋转差分图像来合成图像来计算合成图像。 Zernike计算单元通过Zernike多项式数字化合成图像，并将同心圆分量输出到确定单元，其中将分量与先前设置的阈值进行比较，从而确定基板上存在或不存在缺陷。本发明可以有助于确定基板上的宏观缺陷的存在或不存在，并且减少确定所需的时间。

5. 发明授权

US08135487B2 Temperature setting method and apparatus for a thermal processing plate 有权
标题翻译：用于热处理板的温度设定方法和装置
公开(公告)号：US08135487B2
公开(公告)日：2012-03-13
申请号：US12103276
申请日：2008-04-15
申请人： Megumi Jyousaka , Masahide Tadokoro , Yoshitaka Konishi , Shinichi Shinozuka , Kunie Ogata
发明人： Megumi Jyousaka , Masahide Tadokoro , Yoshitaka Konishi , Shinichi Shinozuka , Kunie Ogata
IPC分类号： G06F19/00 , H01L21/302 , H01L21/461
CPC分类号： H01L21/67248
摘要： A temperature setting method of the present invention includes the steps of: measuring states of an etching pattern within the substrate for a substrate for which a series of photolithography processing including thermal processing and an etching treatment thereafter have been finished; calculating temperature correction values for regions of a thermal processing plate from measurement result of the states of the etching pattern within the substrate using a function between correction amounts for the states of the etching pattern and the temperature correction values for the thermal processing plate; and setting the temperature for each of the regions of the thermal processing plate by each of the calculated temperature correction values.
摘要翻译：本发明的温度设定方法包括以下步骤：测量用于其后完成了包括热处理和蚀刻处理的一系列光刻处理的基板的蚀刻图案的状态; 使用蚀刻图案的状态的校正量和热处理板的温度校正值之间的函数，从衬底内的蚀刻图案的状态的测量结果计算热处理板的区域的温度校正值; 并且通过计算的每个温度校正值来设定热处理板的每个区域的温度。

6. 发明授权

US07957828B2 Temperature setting method for thermal processing plate, temperature setting apparatus for thermal processing plate, and computer-readable storage medium 有权
标题翻译：热处理板的温度设定方法，热处理板的温度设定装置和计算机可读存储介质
公开(公告)号：US07957828B2
公开(公告)日：2011-06-07
申请号：US12099970
申请日：2008-04-09
申请人： Masahide Tadokoro , Megumi Jyousaka , Yoshitaka Konishi , Shinichi Shinozuka , Kunie Ogata
发明人： Masahide Tadokoro , Megumi Jyousaka , Yoshitaka Konishi , Shinichi Shinozuka , Kunie Ogata
IPC分类号： G06F19/00
CPC分类号： H01L21/67248 , G03F7/70483
摘要： In the present invention, the line widths within a substrate of an etching pattern are measured for a substrate for which photolithography processing and an etching treatment thereafter have been finished. The line width measurement results are converted into the line widths of a resist pattern using relational expressions which have been obtained in advance. From the converted line widths of the resist pattern, coefficients of a polynomial function indicating variations within the substrate are calculated. Next, a function between line width correction amounts for the resist pattern and temperature correction values is used to calculate temperature correction values for the regions of the thermal plate to bring the coefficients of the polynomial function close to zero. Based on each of the calculated temperature correction values, the temperature for each of the regions is set.
摘要翻译：在本发明中，对于其后的光刻处理和蚀刻处理结束的基板测量蚀刻图案的基板内的线宽。使用预先获得的关系式将线宽测量结果转换成抗蚀剂图案的线宽。根据抗蚀剂图案的转换线宽，计算表示衬底内的变化的多项式函数的系数。接下来，使用抗蚀剂图案的线宽校正量和温度校正值之间的函数来计算热板的区域的温度校正值，以使多项式函数的系数接近零。基于每个计算的温度校正值，设定每个区域的温度。

7. 发明申请

US20080105669A1 TEMPERATURE SETTING METHOD OF THERMAL PROCESSING PLATE, COMPUTER-READABLE RECORDING MEDIUM RECORDING PROGRAM THEREON, AND TEMPERATURE SETTING APPARATUS FOR THERMAL PROCESSING PLATE 有权
标题翻译：热处理板的温度设定方法，计算机可读记录介质记录程序及温度设定装置
公开(公告)号：US20080105669A1
公开(公告)日：2008-05-08
申请号：US11926808
申请日：2007-10-29
申请人： Megumi JYOUSAKA , Shinichi Shinozuka , Kunie Ogata
发明人： Megumi JYOUSAKA , Shinichi Shinozuka , Kunie Ogata
IPC分类号： H05B3/68
CPC分类号： H01L21/67248
摘要： A thermal plate of a heating unit is divided into a plurality of thermal plate regions, and a temperature can be set for each of the thermal plate regions. A temperature correction value for adjusting a temperature within the thermal plate can be set for each of the thermal plate regions of the thermal plate. The line widths within the substrate which has been subjected to a photolithography process are measured, and an in-plane tendency of the measured line widths is decomposed into a plurality of in-plane tendency components using a Zernike polynomial. From the calculated plurality of in-plane tendency components, in-plane tendency components improvable by changing the temperature correction values are extracted and added together to calculate an improvable in-plane tendency of the measured line widths within the substrate. The change of setting of the temperature correction value for each of the thermal plate regions of the thermal plate is performed only when the magnitude of the improvable in-plane tendency exceeds a threshold value set in advance.
摘要翻译：加热单元的热板被分成多个热板区域，并且可以为每个热板区域设定温度。可以对热板的每个热板区域设定用于调节热板内的温度的温度校正值。测量经过光刻处理的衬底内的线宽，并且使用Zernike多项式将所测量的线宽的面内趋势分解成多个面内趋势分量。从计算出的多个面内趋势分量中，提取通过改变温度校正值而改善的面内趋势分量并将其相加在一起，以计算衬底内测量的线宽的可改进的面内趋势。只有当可提升的平面内趋势的大小超过预先设定的阈值时，才进行热板的每个热板区域的温度校正值的设定的变化。

8. 发明授权

US08253077B2 Substrate processing method, computer-readable storage medium and substrate processing system 有权
标题翻译：基板处理方法，计算机可读存储介质和基板处理系统
公开(公告)号：US08253077B2
公开(公告)日：2012-08-28
申请号：US13159055
申请日：2011-06-13
申请人： Kunie Ogata , Masahide Tadokoro , Tsuyoshi Shibata , Shinichi Shinozuka
发明人： Kunie Ogata , Masahide Tadokoro , Tsuyoshi Shibata , Shinichi Shinozuka
IPC分类号： H05B3/68
CPC分类号： G03F7/38 , H01L21/67225 , H01L21/67248
摘要： A processing temperature of thermal processing is corrected based on measurement of a first dimension of a resist pattern on a substrate from a previously obtained relation between a dimension of a resist pattern and a temperature of thermal processing, a second dimension of the resist pattern after thermal processing is performed at the corrected processing temperature is measured, a distribution within the substrate of the second dimension is classified into a linear component expressed by an approximated curved surface and a nonlinear component, a processing condition of exposure processing is corrected based on the linear component from a previously obtained relation between a dimension of a resist pattern and a processing condition of exposure processing, and thermal processing at the processing temperature corrected in a temperature correcting step and exposure processing under the processing condition corrected in an exposure condition correcting step are performed to form a predetermined pattern.
摘要翻译：基于先前获得的抗蚀剂图案的尺寸和热处理温度之间的关系，基于热处理后的抗蚀剂图案的第二维度，基于基板上的抗蚀剂图案的第一尺寸的测量来校正热处理的处理温度在校正后的处理温度下进行处理，将第二维度的基板内的分布分类成由近似曲面和非线性成分表示的线性分量，根据线性分量来校正曝光处理的处理条件从先前获得的抗蚀剂图案的尺寸和曝光处理的处理条件之间的关系以及在温度校正步骤中校正的处理温度下的热处理和在曝光条件校正步骤中校正的处理条件下的曝光处理进行到形成一个预先确定模式。

9. 发明申请

US20110242513A1 SUBSTRATE PROCESSING METHOD, COMPUTER-READABLE STORAGE MEDIUM AND SUBSTRATE PROCESSING SYSTEM 有权
标题翻译：基板处理方法，计算机可读存储介质和基板处理系统
公开(公告)号：US20110242513A1
公开(公告)日：2011-10-06
申请号：US13159055
申请日：2011-06-13
申请人： Kunie OGATA , Masahide Tadokoro , Tsuyoshi Shibata , Shinichi Shinozuka
发明人： Kunie OGATA , Masahide Tadokoro , Tsuyoshi Shibata , Shinichi Shinozuka
IPC分类号： G03B27/42
CPC分类号： G03F7/38 , H01L21/67225 , H01L21/67248
摘要： A processing temperature of thermal processing is corrected based on measurement of a first dimension of a resist pattern on a substrate from a previously obtained relation between a dimension of a resist pattern and a temperature of thermal processing, a second dimension of the resist pattern after thermal processing is performed at the corrected processing temperature is measured, a distribution within the substrate of the second dimension is classified into a linear component expressed by an approximated curved surface and a nonlinear component, a processing condition of exposure processing is corrected based on the linear component from a previously obtained relation between a dimension of a resist pattern and a processing condition of exposure processing, and thermal processing at the processing temperature corrected in a temperature correcting step and exposure processing under the processing condition corrected in an exposure condition correcting step are performed to form a predetermined pattern.
摘要翻译：基于先前获得的抗蚀剂图案的尺寸和热处理温度之间的关系，基于热处理后的抗蚀剂图案的第二维度，基于基板上的抗蚀剂图案的第一尺寸的测量来校正热处理的处理温度在校正后的处理温度下进行处理，将第二维度的基板内的分布分类成由近似曲面和非线性成分表示的线性分量，根据线性分量来校正曝光处理的处理条件从先前获得的抗蚀剂图案的尺寸和曝光处理的处理条件之间的关系以及在温度校正步骤中校正的处理温度下的热处理和在曝光条件校正步骤中校正的处理条件下的曝光处理进行到形成一个预先确定模式。

10. 发明授权

US07529595B2 Method of controlling substrate processing apparatus and substrate processing apparatus 有权
标题翻译：控制基板处理装置和基板处理装置的方法
公开(公告)号：US07529595B2
公开(公告)日：2009-05-05
申请号：US10581073
申请日：2004-11-30
申请人： Shinichi Shinozuka , Shigeki Wada , Masami Yamashita
发明人： Shinichi Shinozuka , Shigeki Wada , Masami Yamashita
IPC分类号： G06F19/00
CPC分类号： H01L21/67745 , G03F7/162 , G03F7/3021 , H01L21/67276
摘要： It is an object of the present invention to realize, in a coating and developing apparatus including an inspection section, reduction in the startup time, cost reduction, and an improved operating rate of the inspection section.In the present invention, a control program of the coating and developing apparatus is set such that a processing flow and an inspection flow can be independently executed, the processing flow being a flow in which a substrate is carried to a processing station from a cassette station to be processed in the processing station and an aligner and thereafter is returned to the cassette station, and the inspection flow being a flow in which the substrate is carried from the cassette station to an inspection station to be inspected there, and is thereafter returned to the cassette station. At startup of the coating and developing apparatus, the inspection flow and the processing flow are executed, and an evaluation work of an inspection unit of the inspection station and an adjustment work of a processing unit in the processing station can proceed simultaneously. When the inspection station is idle, a substrate can be carried from an external part to the cassette station to be inspected there.
摘要翻译：本发明的目的是在包括检查部分的涂覆和显影装置中实现起动时间的减少，成本降低和检查部分的提高的操作速度。在本发明中，涂布显影装置的控制程序被设定为能够独立地执行处理流程和检查流程，处理流程是将基板从盒式磁带机搬送到加工站的流程在处理站和对准器中处理，然后返回到盒式站，并且检查流程是将基板从盒式站被运送到在那里进行检查的检查站的流程，然后返回到盒式电台。在涂装和显影装置启动时，执行检查流程和处理流程，并且检查站的检查单元和处理站中的处理单元的调整工作的评估工作可以同时进行。当检查站空闲时，可以将基板从外部部件运送到要在那里进行检查的卡带站。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式