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1. 发明申请

US20120031441A1 SUBSTRATE CLEANING APPARATUS AND SUBSTRATE CLEANING METHOD 审中-公开
标题翻译：基板清洗装置和基板清洗方法
公开(公告)号：US20120031441A1
公开(公告)日：2012-02-09
申请号：US13277251
申请日：2011-10-20
申请人： Hiroshi Tomita , Hiroaki Yamada , Kunihiro Miyazaki , Hajime Onoda
发明人： Hiroshi Tomita , Hiroaki Yamada , Kunihiro Miyazaki , Hajime Onoda
IPC分类号： B08B3/00
CPC分类号： H01L21/67057 , B08B3/08 , B08B3/10
摘要： A substrate cleaning apparatus, comprises a process tank that holds a mixture containing a hydrogen peroxide solution and sulfuric acid and is used for cleaning a substrate immersed in said mixture; circulation piping that extends between a primary side of said process tank on which said mixture is injected into said process tank and a secondary side of said process tank on which said mixture is discharged from said process tank and has a pump for causing circulation of said mixture; a heater disposed in said circulation piping configured to heat said mixture to a predetermined temperature; a chemical injection pipe configured to inject a hydrogen peroxide solution into said circulation piping at a position between the primary side of said process tank and a secondary side, which is a downstream side, of said heater; and a filter disposed in said circulation piping configured to remove particles in said mixture.
摘要翻译：一种基板清洗装置，包括保持含有过氧化氢溶液和硫酸的混合物的处理罐，用于清洗浸在所述混合物中的基板; 所述循环管道在所述处理罐的初级侧之间延伸，所述处理罐的所述混合物被注入到所述处理罐中，所述处理罐的二次侧在所述处理罐的二次侧上从所述处理罐排出所述混合物，并且具有用于使所述混合物循环的泵 ; 设置在所述循环管道中的加热器，被配置为将所述混合物加热至预定温度; 化学注入管，被配置为在所述处理罐的初级侧和位于所述加热器的下游侧的次级侧之间的位置处将过氧化氢溶液注入到所述循环管道中; 以及设置在所述循环管道中的过滤器，其构造成去除所述混合物中的颗粒。

2. 发明申请

US20070095363A1 Substrate cleaning apparatus and substrate cleaning method 失效
标题翻译：基板清洗装置和基板清洗方法
公开(公告)号：US20070095363A1
公开(公告)日：2007-05-03
申请号：US11588393
申请日：2006-10-27
申请人： Hiroshi Tomita , Hiroaki Yamada , Kunihiro Miyazaki , Hajime Onoda
发明人： Hiroshi Tomita , Hiroaki Yamada , Kunihiro Miyazaki , Hajime Onoda
IPC分类号： C23G1/00 , B08B7/04 , B08B3/00 , C03C23/00
CPC分类号： H01L21/67057 , B08B3/08 , B08B3/10
摘要： A substrate cleaning apparatus, comprises a process tank that holds a mixture containing a hydrogen peroxide solution and sulfuric acid and is used for cleaning a substrate immersed in said mixture; circulation piping that extends between a primary side of said process tank on which said mixture is injected into said process tank and a secondary side of said process tank on which said mixture is discharged from said process tank and has a pump for causing circulation of said mixture; a heater disposed in said circulation piping configured to heat said mixture to a predetermined temperature; a chemical injection pipe configured to inject a hydrogen peroxide solution into said circulation piping at a position between the primary side of said process tank and a secondary side, which is a downstream side, of said heater; and a filter disposed in said circulation piping configured to remove particles in said mixture.
摘要翻译：一种基板清洗装置，包括保持含有过氧化氢溶液和硫酸的混合物的处理罐，用于清洗浸在所述混合物中的基板; 所述循环管道在所述处理罐的初级侧之间延伸，所述处理罐的所述混合物被注入到所述处理罐中，所述处理罐的二次侧在所述处理罐的二次侧上从所述处理罐排出所述混合物，并且具有用于使所述混合物循环的泵 ; 设置在所述循环管道中的加热器，被配置为将所述混合物加热至预定温度; 化学注入管，被配置为在所述处理罐的初级侧和位于所述加热器的下游侧的次级侧之间的位置处将过氧化氢溶液注入到所述循环管道中; 以及设置在所述循环管道中的过滤器，其构造成去除所述混合物中的颗粒。

3. 发明授权

US08066020B2 Substrate cleaning apparatus and substrate cleaning method 失效
标题翻译：基板清洗装置和基板清洗方法
公开(公告)号：US08066020B2
公开(公告)日：2011-11-29
申请号：US11588393
申请日：2006-10-27
申请人： Hiroshi Tomita , Hiroaki Yamada , Kunihiro Miyazaki , Hajime Onoda
发明人： Hiroshi Tomita , Hiroaki Yamada , Kunihiro Miyazaki , Hajime Onoda
IPC分类号： B08B3/00
CPC分类号： H01L21/67057 , B08B3/08 , B08B3/10
摘要： A substrate cleaning apparatus, comprises a process tank that holds a mixture containing a hydrogen peroxide solution and sulfuric acid and is used for cleaning a substrate immersed in said mixture; circulation piping that extends between a primary side of said process tank on which said mixture is injected into said process tank and a secondary side of said process tank on which said mixture is discharged from said process tank and has a pump for causing circulation of said mixture; a heater disposed in said circulation piping configured to heat said mixture to a predetermined temperature; a chemical injection pipe configured to inject a hydrogen peroxide solution into said circulation piping at a position between the primary side of said process tank and a secondary side, which is a downstream side, of said heater; and a filter disposed in said circulation piping configured to remove particles in said mixture.
摘要翻译：一种基板清洗装置，包括保持含有过氧化氢溶液和硫酸的混合物的处理罐，用于清洗浸在所述混合物中的基板; 所述循环管道在所述处理罐的初级侧之间延伸，所述处理罐的所述混合物被注入到所述处理罐中，所述处理罐的二次侧在所述处理罐的二次侧上从所述处理罐排出所述混合物，并且具有用于使所述混合物循环的泵 ; 设置在所述循环管道中的加热器，被配置为将所述混合物加热至预定温度; 化学注入管，被配置为在所述处理罐的初级侧和位于所述加热器的下游侧的次级侧之间的位置处将过氧化氢溶液注入到所述循环管道中; 以及设置在所述循环管道中的过滤器，其构造成去除所述混合物中的颗粒。

4. 发明申请

US20080006295A1 Semiconductor manufacturing apparatus for use in process of cleaning semiconductor substrate and method of manufacturing semiconductor device using the same 审中-公开
标题翻译：用于清洁半导体衬底的半导体制造装置及使用其的制造半导体器件的方法
公开(公告)号：US20080006295A1
公开(公告)日：2008-01-10
申请号：US11542201
申请日：2006-10-04
申请人： Kunihiro Miyazaki , Hiroaki Yamada , Hiroshi Tomita , Hajime Onoda
发明人： Kunihiro Miyazaki , Hiroaki Yamada , Hiroshi Tomita , Hajime Onoda
IPC分类号： C23G1/00 , C23G1/02 , B08B3/00
CPC分类号： H01L21/31133 , G03F7/423
摘要： A processing tank stores heated sulfuric acid, and a semiconductor substrate having resist formed thereon and to be processed is immersed in the heated sulfuric acid. A first introduction unit introduces ozone gas into the sulfuric acid stored in the processing tank. A second introduction unit introduces hydrogen peroxide into the solution containing sulfuric acid and ozone at least before the processing of the semiconductor substrate is completed.
摘要翻译：处理槽储存加热的硫酸，并将其上形成有待加工的抗蚀剂的半导体衬底浸入加热的硫酸中。第一引入单元将臭氧气体引入储存在处理槽中的硫酸中。至少在半导体基板的加工完成之前，第二引入单元将含有硫酸和臭氧的溶液引入到过氧化氢中。

5. 发明授权

US06645876B2 Etching for manufacture of semiconductor devices 有权
公开(公告)号：US06645876B2
公开(公告)日：2003-11-11
申请号：US10014609
申请日：2001-12-14
申请人： Mami Saito , Hiroshi Tomita , Kunihiro Miyazaki , Soichi Nadahara
发明人： Mami Saito , Hiroshi Tomita , Kunihiro Miyazaki , Soichi Nadahara
IPC分类号： H01L21302
CPC分类号： H01L21/02071 , H01L21/3081 , H01L21/31111 , H01L21/67086
摘要： A method of manufacture of semiconductor devices is disclosed, which includes an etching process carried out by using an undiluted etching solution containing H2SO4 and NH4F or H2SO4 and HF as main components, and having an H2O content set to 5 wt % or lower. Moreover, a method of manufacture of semiconductor devices is disclosed, which includes selective etching an SiN film by using a mixed solution of H2SO4 and H2O, or an etching solution obtained by adding a small amount of hydrofluoric acid to the mixed solution.

6. 发明申请

US20070233302A1 System for controlling production of electronic devices, system and method for producing electronic devices, and computer program product 审中-公开
标题翻译：用于控制电子设备生产的系统，用于生产电子设备的系统和方法以及计算机程序产品
公开(公告)号：US20070233302A1
公开(公告)日：2007-10-04
申请号：US11600791
申请日：2006-11-17
申请人： Kunihiro Miyazaki , Yoshihiro Ogawa , Shoichi Harakawa
发明人： Kunihiro Miyazaki , Yoshihiro Ogawa , Shoichi Harakawa
IPC分类号： G06F19/00
CPC分类号： G05B19/41865 , G05B2219/32097 , G05B2219/32275 , G05B2219/45031 , Y02P90/20 , Y02P90/265
摘要： A system for controlling production of electronic devices includes a recipe creation unit creating a processing recipe describing processing conditions for first and second processes so as to satisfy a production specification of a characteristic and a yield rate of the electronic devices, and an additional recipe describing additional processing conditions determined based on a relation of the characteristic and the yield rate to a latency time between a completion time of the first process and a start time of the second process so as to satisfy the production specification; and a recipe designation module designating the additional recipe for processing of intermediate products of the electronic devices, produced by the first process, when the latency time exceeds a reference.
摘要翻译：一种用于控制电子设备生产的系统包括：配方创建单元，其创建描述第一和第二处理的处理条件的处理配方，以满足电子设备的特性和成品率的生产规格，以及描述附加的附加配方基于特性和产率的关系确定的处理条件与第一处理的完成时间和第二处理的开始时间之间的等待时间以满足生产规范; 以及当延迟时间超过参考时，指定由第一处理产生的电子设备的中间产品的处理的附加配方的配方指定模块。

7. 发明申请

US20050177273A1 Material supply system in semiconductor device manufacturing plant 失效
标题翻译：半导体器件制造厂的材料供应系统
公开(公告)号：US20050177273A1
公开(公告)日：2005-08-11
申请号：US10507699
申请日：2003-03-27
申请人： Kunihiro Miyazaki , Soichi Nadahara , Kinya Usuda , Masaji Akahori , Sota Nakagawa , Ken Nakajima
发明人： Kunihiro Miyazaki , Soichi Nadahara , Kinya Usuda , Masaji Akahori , Sota Nakagawa , Ken Nakajima
IPC分类号： H01L21/02 , B24B57/02 , C11D11/00 , C23C16/52 , H01L21/00 , H01L21/306 , G06F19/00
CPC分类号： H01L21/67276 , B24B37/04 , B24B57/02 , C11D11/0047 , C23C16/52 , G05B2219/32082 , H01L21/02052 , Y02P90/20 , Y10S210/90
摘要： In a small scaled plant intended for flexible manufacturing, a pure water supply system is provided at a low cost without reducing a production efficiency. A pure water system produces a plurality of grades of pure water which are supplied through pipes connected to points of use for cleaning, CMP, lithography, and the like. Upon receipt of a request signal from each point of use for starting to use a certain grade of pure water, a controller determines whether or not a required amount exceeds the capacity of the grade of pure water which can be supplied by the pure water system. If not, the controller sends a use permission signal to the point of use for permitting the same to use the pure water. When a certain use point is using the requested grade of pure water, the controller may not permit the requesting point of use to use the pure water until a use end signal is sent from the use point which is using the pure water.
摘要翻译：在用于灵活制造的小规模工厂中，以低成本提供纯净水供应系统，而不降低生产效率。纯水系统产生多个等级的纯水，其通过连接到用于清洁，CMP，光刻等的使用点的管道供应。一旦控制器收到来自每个使用点的请求信号以开始使用一定等级的纯水，则控制器确定所需量是否超过纯水系统能提供的纯水等级的容量。如果没有，控制器将使用许可信号发送到使用点，以允许其使用纯净水。当某个使用点正在使用所要求的纯水量时，控制器可能不允许请求使用点使用纯净水，直到从使用纯水的使用点发出使用结束信号。

8. 发明申请

US20050081886A1 Wafer cleaning method and equipment 审中-公开
标题翻译：晶圆清洗方法和设备
公开(公告)号：US20050081886A1
公开(公告)日：2005-04-21
申请号：US10932006
申请日：2004-09-02
申请人： Kunihiro Miyazaki , Takashi Higuchi , Toshiki Nakajima , Hiroyuki Matsuo
发明人： Kunihiro Miyazaki , Takashi Higuchi , Toshiki Nakajima , Hiroyuki Matsuo
IPC分类号： H01L21/304 , C23G1/00 , G01N27/06 , H01L21/00 , H01L21/302
CPC分类号： H01L21/67057 , G01N27/06
摘要： There is disclosed a wafer cleaning method comprising supplying a cleaning water to a wafer cleaned with a chemical solution, measuring the resistivity of a solution including the chemical solution and cleaning water, and differentiating the measured value with respect to time, and cleaning the wafer continuously with the cleaning water until the time differential value of the resistivity becomes equal to or less than a preset value and is held at that values for preset time.
摘要翻译：公开了一种晶片清洗方法，其包括向清洗的化学溶液的晶片提供清洗水，测量包括化学溶液和清洗水的溶液的电阻率，并且相对于时间差分测量值，以及连续清洁晶片直到电阻率的时间差值等于或小于预设值，并将其保持在该预定时间的值。

9. 发明授权

US5457726A Analyzer for total reflection fluorescent x-ray and its correcting method 失效
标题翻译：全反射荧光X射线分析仪及其校正方法
公开(公告)号：US5457726A
公开(公告)日：1995-10-10
申请号：US321825
申请日：1994-10-06
申请人： Kunihiro Miyazaki
发明人： Kunihiro Miyazaki
IPC分类号： G01N23/223 , G21K7/00 , H01L21/66
CPC分类号： G01N23/223 , G01N2223/076
摘要： A sample is mounted on a sample base. A detector is provided on the sample base, and detects a fluorescent X-ray generated from the sample, and a scattered X-ray of an incident X-ray when the sample is irradiated with the incident X-ray. A controller controls the sample base and an operation of the detector. The controller sequentially changes an incident angle of the incident X-ray to the sample so as to detect the fluorescent X-ray generated from the sample at each incident angle, and the scattered X-ray of the incident X-ray. Next, the controller obtains the relationship between the incident angle of the incident X-ray to the sample and a standard value obtained by standardizing intensity of the fluorescent X-ray by intensity of the scattered X-ray. Then, the controller corrects the incident angle of the incident X-ray to the sample based on the obtained relationship. Moreover, the controller corrects the positional relationship between an irradiation position of the incident X-ray to the sample and said detector based on the obtained relationship. In this case, the correction of the incident angle of the incident X-ray to said sample is made after ending the correction of the positional relationship.
摘要翻译：样品安装在样品底座上。检测器设置在样品基底上，并且检测从样品产生的荧光X射线和当入射的X射线照射样品时入射的X射线的散射的X射线。控制器控制样品基底和检测器的操作。控制器顺序地将入射的X射线的入射角度改变为样品，以便检测从每个入射角度的样品产生的荧光X射线和入射的X射线的散射X射线。接下来，控制器获得入射的X射线与样品的入射角与通过散射X射线的强度标准化荧光X射线的强度而获得的标准值之间的关系。然后，控制器基于获得的关系来校正入射的X射线对样品的入射角。此外，控制器基于获得的关系来校正入射X射线与样品的照射位置和所述检测器之间的位置关系。在这种情况下，在结束位置关系的校正之后，进行入射X射线对所述样品的入射角的校正。

10. 发明授权

US4915710A Abrasive composition and process for polishing 失效
标题翻译：研磨组合物和抛光工艺
公开(公告)号：US4915710A
公开(公告)日：1990-04-10
申请号：US324057
申请日：1989-03-16
申请人： Kunihiro Miyazaki , Ken Ishitobi , Yoshinobu Yamaguchi
发明人： Kunihiro Miyazaki , Ken Ishitobi , Yoshinobu Yamaguchi
IPC分类号： B24D3/00 , B24D3/34 , C09G1/02 , C09K3/14 , C23F3/00 , G11B5/84
CPC分类号： C23F3/00 , B24D3/00 , B24D3/346 , C09G1/02 , C09K3/1463
摘要： An abrasive composition particularly suitable for polishing an aluminum-based substrate for a magnetic recording disc, the composition comprising: an alumineous abrasive, preferably in an amount of 3 to 25% by weight; a polishing accelerator of gluconic and/or lactic acid, preferably in an amount of 0.1 to 3% by weight; optionally with sodium gluconate and/or sodium lactate in an amount of 0.1 to 3% by weight; colloidal alumina, preferably in an amount of 0.1 to 5% by weight; and water, the composition typically having a pH of 3 to 5.
摘要翻译：一种特别适用于抛光用于磁记录盘的铝基底材的磨料组合物，该组合物包含：优选3至25重量％的铝制磨料; 葡萄糖酸和/或乳酸的抛光促进剂，优选为0.1至3重量％的量; 任选地以0.1至3重量％的量的葡萄糖酸钠和/或乳酸钠; 胶体氧化铝，优选为0.1至5重量％的量; 和水，组合物通常具有3至5的pH。

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