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    • 7. 发明授权
    • Method for forming thin-film layer for device and organic electroluminescence device
    • 用于器件和有机电致发光器件的薄膜层的形成方法
    • US06649210B2
    • 2003-11-18
    • US09959655
    • 2001-11-02
    • Hiroshi TokailinYoshikazu Nagasaki
    • Hiroshi TokailinYoshikazu Nagasaki
    • C23C1424
    • H01L51/0008C09K11/06C23C14/12C23C14/24H01L51/001H01L51/005H01L51/0059H01L51/007H01L51/0081H01L2251/308H05B33/10H05B33/14Y10S428/917
    • The present invention concerns a method of forming one or more thin films on a substrate by depositing two or more materials by vacuum evaporation, comprising, depositing each material under such control that ni value of the each material is k±0.5 wherein k is a constant from 2 to 5, when relationship between a deposition position and a film thickness of a material i on the substrate is approximated by the following equation (1): Di/D0i∝(L0/Li)3 cosni&thgr;i  (1) wherein L0 is a distance from an evaporation source to a plane of the substrate in a perpendicular direction, D0i is a film thickness of the material i at an intersection point of a perpendicular line from the evaporation source to the plane of the substrate, and Di is a film thickness of the material i at a position on the substrate which is apart from the evaporation source by a distance Li in a direction of an angle &thgr;i against the perpendicular line. By the method, a homogenous thin film layer for an element can be formed even on a substrate having large screen.
    • 本发明涉及一种通过真空蒸发沉积两种或更多种材料在衬底上形成一种或多种薄膜的方法,包括:在每种材料的ni值为k±0.5的情况下沉积每种材料,其中k为常数 从2到5,当衬底上的材料i的沉积位置和膜厚之间的关系由下面的等式(1)近似时:其中L0是垂直于基底的蒸发源到平面的距离 方向,D0i是从蒸发源到基板的平面的垂直线的交点处的材料i的膜厚度,Di是基板上位于与基板不同的位置处的材料i的膜厚度 蒸发源在与垂直线成角度的方向上距离为Li。 通过该方法,即使在具有大屏幕的基板上也可以形成均匀的元件用薄膜层。