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    • 5. 发明授权
    • Dielectric filter, dielectric duplexer, mounting structure thereof, and communication device
    • 介质滤波器,介质双工器,其安装结构和通信设备
    • US06204738B1
    • 2001-03-20
    • US09291923
    • 1999-04-14
    • Jun TodaTakashi MaruyamaJinsei IshiharaHideyuki Kato
    • Jun TodaTakashi MaruyamaJinsei IshiharaHideyuki Kato
    • H01P120
    • H01P1/2136H01P1/2056
    • The invention provides a dielectric filter, comprising: a dielectric block including a first surface and a second surface opposite to each other; a resonator hole extending between the first surface and second surface of the dielectric block, said resonator hole including a large-sectional area portion, a small-sectional area portion and a step portion between the large-sectional area portion and the small-sectional area portion; an inner conductor provided on the inner surface of the resonator hole; an outer conductor provided on the outer surface of the dielectric block; the inner conductor being electrically left unconnected to the outer conductor at the first surface of the dielectric block and being electrically connected to the outer conductor at the second surface of the dielectric block; and a seat portion provided on the first surface of the dielectric block such that the first surface serves as a mounting surface of the dielectric filter.
    • 本发明提供了一种介质滤波器,包括:介质块,包括彼此相对的第一表面和第二表面; 在所述介​​质块的第一表面和第二表面之间延伸的谐振器孔,所述谐振器孔包括大截面积部分,小截面积部分和大截面积部分与小截面面积之间的台阶部分 一部分; 设置在谐振器孔的内表面上的内导体; 设置在介质块的外表面上的外导体; 所述内部导体在所述介质块的所述第一表面处电连接到所述外部导体,并且在所述介质块的所述第二表面处电连接到所述外部导体; 以及设置在介质块的第一表面上的座部分,使得第一表面用作介质过滤器的安装表面。
    • 6. 发明授权
    • Dielectric resonator apparatus having adjustable external structure and
method of adjusting same
    • 具有可调外部结构的介质谐振器装置及其调节方法
    • US5539363A
    • 1996-07-23
    • US357945
    • 1994-12-15
    • Takashi MaruyamaHideyuki KatoYukihiro Kitaichi
    • Takashi MaruyamaHideyuki KatoYukihiro Kitaichi
    • H01P1/205H01P1/213H01P5/08H01P7/04
    • H01P1/2056
    • A dielectric resonator apparatus contains coaxial resonators in a dielectric block made of a dielectric material, having a first end surface, a second end surface and a plurality of side surfaces therebetween. The block is formed with resonator-forming throughholes penetrating therethrough and having openings on the first and second end surfaces. Inner conductors are formed inside these resonator-forming throughholes, and an outer conductor is formed at least on the side surfaces and the first end surface. A molded resin member made of a dielectric resin material, having pin-accepting holes therethrough, is attached to the resonator-forming throughholes. Input/output terminals are formed on the molded resin member so as to be insulated from the inner and outer conductors. Metallic pins are inserted into the pin-accepting holes to thereby contact the input-output terminals and to provide external-connection capacitance with the inner conductors. A conductive film is formed at least on the second end surface or the molded resin member for preventing electromagnetic waves from leaking outside. Functional characteristics of such an apparatus can be adjusted by controlling the external-connection capacitance by varying the distance by which the metallic pins are inserted into the pin-accepting holes.
    • 介质谐振器装置在由电介质材料制成的电介质块中包含同轴谐振器,其具有第一端面,第二端面和它们之间的多个侧表面。 该块形成有穿透其中的谐振器形成的通孔,并且在第一和第二端面上具有开口。 内部导体形成在这些谐振器形成通孔内部,至少在侧面和第一端面上形成外部导体。 在谐振器形成通孔上附着由绝缘树脂材料制成的模制树脂构件,其具有穿过其的销接收孔。 在模制树脂构件上形成输入/输出端子,以便与内导体和外导体绝缘。 金属销插入销接收孔,从而接触输入输出端子,并与内导体提供外部连接电容。 至少在第二端面或模制树脂构件上形成导电膜,用于防止电磁波泄漏到外部。 可以通过改变金属销插入销接收孔的距离来控制外部连接电容来调节这种装置的功能特性。
    • 9. 发明授权
    • Semiconductor manufacture method
    • 半导体制造方法
    • US08143075B2
    • 2012-03-27
    • US11300276
    • 2005-12-15
    • Takashi Maruyama
    • Takashi Maruyama
    • H01L21/00
    • H01L23/544B82Y10/00B82Y40/00G03F9/7003H01J37/3045H01J37/3174H01J2237/31793H01L2223/54453H01L2223/5448H01L2924/0002H01L2924/00
    • A semiconductor device manufacture method has the steps of: (a) forming a semiconductor device structure in a chip and alignment marks, respectively in a semiconductor wafer; (b) forming a workpiece layer above the semiconductor wafer; (c) exposing the alignment marks; (d) coating an electron beam resist film on the workpiece layer; (e) scanning the alignment marks with an electron beam to obtain plural position information on the alignment marks and obtaining differences between the plural position information; (f) removing abnormal values of position information in accordance with the difference between the plural position information; and (g) performing an electron beam exposure in accordance with plural position information of the alignment marks with the abnormal value being removed. An alignment mark detection precision can be improved in electron beam exposure.
    • 半导体器件制造方法具有以下步骤:(a)分别在半导体晶片中形成芯片中的半导体器件结构和对准标记; (b)在半导体晶片上形成工件层; (c)露出对准标记; (d)在工件层上涂覆电子束抗蚀剂膜; (e)用电子束扫描对准标记,以获得对准标记的多个位置信息,并获得多个位置信息之间的差异; (f)根据多个位置信息之间的差异去除位置信息的异常值; 和(g)根据所述对准标记的多个位置信息进行电子束曝光,异常值被去除。 可以改善电子束曝光中的对准标记检测精度。