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1. 发明申请

US20110088731A1 SEMICONDUCTOR SUBSTRATE CLEANING METHOD USING BUBBLE/CHEMICAL MIXED CLEANING LIQUID 审中-公开
标题翻译：使用泡沫/化学混合清洗液的半导体基板清洗方法
公开(公告)号：US20110088731A1
公开(公告)日：2011-04-21
申请号：US12978933
申请日：2010-12-27
申请人： Hiroshi TOMITA , Hiroyasu Iimori , Hiroaki Yamada , Minako Inukai
发明人： Hiroshi TOMITA , Hiroyasu Iimori , Hiroaki Yamada , Minako Inukai
IPC分类号： B08B3/00 , B08B3/02
CPC分类号： H01L21/02057 , B08B3/10 , B08B3/12 , C11D3/0052 , C11D11/0047 , H01L21/02052 , H01L21/67057
摘要： A method has been disclosed which cleans a semiconductor substrate using a cleaning liquid produced by mixing bubbles of a gas into an acid solution in which the gas has been dissolved to the saturated concentration and which brings the zeta potentials of the semiconductor substrate and adsorbed particles into the negative region by the introduction of an interfacial active agent. Alternatively, a semiconductor substrate is cleaned using a cleaning liquid produced by mixing bubbles of a gas into an alkaline solution in which the gas has been dissolved to the saturated concentration and whose pH is 9 or more.
摘要翻译：已经公开了一种方法，其使用通过将气体的气泡混合到其中已经溶解气体的酸溶液达到饱和浓度并且将半导体衬底和吸附的颗粒的ζ电位引入的清洗液清洗半导体衬底通过引入界面活性剂的负面区域。或者，使用将气体的气泡混合到其中溶解有气体至饱和浓度并且pH为9以上的碱性溶液中制备的清洗液来清洗半导体衬底。

2. 发明申请

US20080308132A1 SEMICONDUCTOR SUBSTRATE CLEANING METHOD USING BUBBLE/CHEMICAL MIXED CLEANING LIQUID 审中-公开
标题翻译：使用泡沫/化学混合清洗液的半导体基板清洗方法
公开(公告)号：US20080308132A1
公开(公告)日：2008-12-18
申请号：US12129074
申请日：2008-05-29
申请人： Hiroshi Tomita , Hiroyasu Iimori , Hiroaki Yamada , Minako Inukai
发明人： Hiroshi Tomita , Hiroyasu Iimori , Hiroaki Yamada , Minako Inukai
IPC分类号： B08B3/12 , B08B3/08
CPC分类号： H01L21/02057 , B08B3/10 , B08B3/12 , C11D3/0052 , C11D11/0047 , H01L21/02052 , H01L21/67057
摘要： A method has been disclosed which cleans a semiconductor substrate using a cleaning liquid produced by mixing bubbles of a gas into an acid solution in which the gas has been dissolved to the saturated concentration and which brings the zeta potentials of the semiconductor substrate and adsorbed particles into the negative region by the introduction of an interfacial active agent. Alternatively, a semiconductor substrate is cleaned using a cleaning liquid produced by mixing bubbles of a gas into an alkaline solution in which the gas has been dissolved to the saturated concentration and whose pH is 9 or more.
摘要翻译：已经公开了一种方法，其使用通过将气体的气泡混合到其中已经溶解气体的酸溶液达到饱和浓度并且将半导体衬底和吸附的颗粒的ζ电位引入的清洗液清洗半导体衬底通过引入界面活性剂的负面区域。或者，使用将气体的气泡混合到其中溶解有气体至饱和浓度并且pH为9以上的碱性溶液中制备的清洗液来清洗半导体衬底。

3. 发明申请

US20080064212A1 Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20080064212A1
公开(公告)日：2008-03-13
申请号：US11892634
申请日：2007-08-24
申请人： Yoshihiro Ogawa , Masahiro Kiyotoshi , Katsuhiko Tachibana , Hiroyasu Iimori , Hiroaki Yamada , Kaori Umezawa , Hiroshi Tomita , Atsuko Kawasaki
发明人： Yoshihiro Ogawa , Masahiro Kiyotoshi , Katsuhiko Tachibana , Hiroyasu Iimori , Hiroaki Yamada , Kaori Umezawa , Hiroshi Tomita , Atsuko Kawasaki
IPC分类号： H01L21/311 , H01L21/31
CPC分类号： H01L21/3125 , C23C18/122 , C23C18/1287 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/316 , H01L21/3165 , H01L21/67086
摘要： A method of manufacturing a semiconductor device, has applying perhydro polysilazane to a substrate; and immersing at least the surface of said substrate to which perhydro polysilazane is applied in a mixture containing water heated to 120 degrees C. or higher to which ultrasound is applied, thereby modifying the perhydro polysilazane into silicon oxide.
摘要翻译：一种半导体器件的制造方法，将全氢化硅氮烷应用于基板; 并将至少将所述基板的表面施加于含有加氢至120℃以上的水的混合物中，在该混合物中施加全羟基聚硅氮烷，从而将全氟聚硅氮烷改性为氧化硅。

4. 发明申请

US20060081335A1 Semiconductor substrate processing apparatus and semiconductor device fabrication method 审中-公开
标题翻译：半导体衬底处理设备和半导体器件制造方法
公开(公告)号：US20060081335A1
公开(公告)日：2006-04-20
申请号：US11246140
申请日：2005-10-11
申请人： Hiroyasu Iimori , Hiroshi Tomita , Hiroaki Yamada
发明人： Hiroyasu Iimori , Hiroshi Tomita , Hiroaki Yamada
IPC分类号： C23F1/00 , C03C15/00
CPC分类号： H01L21/67253 , H01L21/67086
摘要： According to the present invention, there is provided a semiconductor substrate processing apparatus comprising: a processing bath which etches a semiconductor substrate by dipping the semiconductor substrate into a processing solution; an outer bath which is positioned outside said processing bath and receives the processing solution overflowing from said processing bath; a circulation channel which resupplies the processing solution discharged from said outer bath to said processing bath; a heater which adjusts a temperature of the processing solution flowing through said circulation channel; a filter which removes foreign matter in the processing solution flowing through said circulation channel; and a controller which measures, after the semiconductor substrate is loaded into said processing bath, one of the temperature of the processing solution in said processing bath and a time during which the temperature of the processing solution restores a predetermined temperature, calculates a processing time during which the semiconductor substrate is etched on the basis of the measurement result, and etches the semiconductor substrate on the basis of the calculated processing time.
摘要翻译：根据本发明，提供了一种半导体衬底处理装置，包括：通过将半导体衬底浸入处理溶液来蚀刻半导体衬底的处理槽; 位于所述处理槽外部并接收从所述处理槽溢出的处理溶液的外浴; 循环通道，其将从所述外浴排出的处理溶液补给所述处理槽; 调节流过所述循环通道的处理溶液的温度的加热器; 过滤器，其去除流过所述循环通道的处理溶液中的异物; 以及控制器，其在半导体衬底被加载到所述处理槽中之后，测量所述处理槽中的处理溶液的温度和处理溶液的温度恢复预定温度的时间之一，计算处理溶液的处理时间基于测量结果蚀刻半导体衬底，并且基于所计算的处理时间蚀刻半导体衬底。

5. 发明申请

US20090011570A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090011570A1
公开(公告)日：2009-01-08
申请号：US12146143
申请日：2008-06-25
申请人： Ichiro Mizushima , Yoshio Ozawa , Takashi Nakao , Akihito Yamamoto , Takashi Suzuki , Masahiro Kiyotoshi , Minako Inukai , Kaori Umezawa , Hiroaki Yamada
发明人： Ichiro Mizushima , Yoshio Ozawa , Takashi Nakao , Akihito Yamamoto , Takashi Suzuki , Masahiro Kiyotoshi , Minako Inukai , Kaori Umezawa , Hiroaki Yamada
IPC分类号： H01L21/76
CPC分类号： H01L21/764
摘要： A method of manufacturing a semiconductor device includes removing a part of a semiconductor substrate to form a protruding portion and a recess portion in a surface area of the semiconductor substrate, forming a first epitaxial semiconductor layer in the recess portion, forming a second epitaxial semiconductor layer on the protruding portion and the first epitaxial semiconductor layer, removing a first part of the second epitaxial semiconductor layer with a second part of the second epitaxial semiconductor layer left to expose a part of the first epitaxial semiconductor layer, and etching the first epitaxial semiconductor layer from the exposed part of the first epitaxial semiconductor layer to form a cavity under the second part of the second epitaxial semiconductor layer.
摘要翻译：一种制造半导体器件的方法包括：去除半导体衬底的一部分以在半导体衬底的表面区域中形成突出部分和凹陷部分，在凹部中形成第一外延半导体层，形成第二外延半导体层在所述突出部分和所述第一外延半导体层上，用所述第二外延半导体层的第二部分去除所述第二外延半导体层的第一部分，以露出所述第一外延半导体层的一部分，并且蚀刻所述第一外延半导体层从第一外延半导体层的暴露部分形成在第二外延半导体层的第二部分下面的空腔。

6. 发明授权

US08114755B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08114755B2
公开(公告)日：2012-02-14
申请号：US12146143
申请日：2008-06-25
申请人： Ichiro Mizushima , Yoshio Ozawa , Takashi Nakao , Akihito Yamamoto , Takashi Suzuki , Masahiro Kiyotoshi , Minako Inukai , Kaori Umezawa , Hiroaki Yamada
发明人： Ichiro Mizushima , Yoshio Ozawa , Takashi Nakao , Akihito Yamamoto , Takashi Suzuki , Masahiro Kiyotoshi , Minako Inukai , Kaori Umezawa , Hiroaki Yamada
IPC分类号： H01L21/76
CPC分类号： H01L21/764
摘要： A method of manufacturing a semiconductor device includes removing a part of a semiconductor substrate to form a protruding portion and a recess portion in a surface area of the semiconductor substrate, forming a first epitaxial semiconductor layer in the recess portion, forming a second epitaxial semiconductor layer on the protruding portion and the first epitaxial semiconductor layer, removing a first part of the second epitaxial semiconductor layer with a second part of the second epitaxial semiconductor layer left to expose a part of the first epitaxial semiconductor layer, and etching the first epitaxial semiconductor layer from the exposed part of the first epitaxial semiconductor layer to form a cavity under the second part of the second epitaxial semiconductor layer.
摘要翻译：一种制造半导体器件的方法包括：去除半导体衬底的一部分以在半导体衬底的表面区域中形成突出部分和凹陷部分，在凹部中形成第一外延半导体层，形成第二外延半导体层在所述突出部分和所述第一外延半导体层上，用所述第二外延半导体层的第二部分去除所述第二外延半导体层的第一部分，以露出所述第一外延半导体层的一部分，并且蚀刻所述第一外延半导体层从第一外延半导体层的暴露部分形成在第二外延半导体层的第二部分下面的空腔。

7. 发明授权

US08066020B2 Substrate cleaning apparatus and substrate cleaning method 失效
标题翻译：基板清洗装置和基板清洗方法
公开(公告)号：US08066020B2
公开(公告)日：2011-11-29
申请号：US11588393
申请日：2006-10-27
申请人： Hiroshi Tomita , Hiroaki Yamada , Kunihiro Miyazaki , Hajime Onoda
发明人： Hiroshi Tomita , Hiroaki Yamada , Kunihiro Miyazaki , Hajime Onoda
IPC分类号： B08B3/00
CPC分类号： H01L21/67057 , B08B3/08 , B08B3/10
摘要： A substrate cleaning apparatus, comprises a process tank that holds a mixture containing a hydrogen peroxide solution and sulfuric acid and is used for cleaning a substrate immersed in said mixture; circulation piping that extends between a primary side of said process tank on which said mixture is injected into said process tank and a secondary side of said process tank on which said mixture is discharged from said process tank and has a pump for causing circulation of said mixture; a heater disposed in said circulation piping configured to heat said mixture to a predetermined temperature; a chemical injection pipe configured to inject a hydrogen peroxide solution into said circulation piping at a position between the primary side of said process tank and a secondary side, which is a downstream side, of said heater; and a filter disposed in said circulation piping configured to remove particles in said mixture.
摘要翻译：一种基板清洗装置，包括保持含有过氧化氢溶液和硫酸的混合物的处理罐，用于清洗浸在所述混合物中的基板; 所述循环管道在所述处理罐的初级侧之间延伸，所述处理罐的所述混合物被注入到所述处理罐中，所述处理罐的二次侧在所述处理罐的二次侧上从所述处理罐排出所述混合物，并且具有用于使所述混合物循环的泵 ; 设置在所述循环管道中的加热器，被配置为将所述混合物加热至预定温度; 化学注入管，被配置为在所述处理罐的初级侧和位于所述加热器的下游侧的次级侧之间的位置处将过氧化氢溶液注入到所述循环管道中; 以及设置在所述循环管道中的过滤器，其构造成去除所述混合物中的颗粒。

8. 发明申请

US20080006295A1 Semiconductor manufacturing apparatus for use in process of cleaning semiconductor substrate and method of manufacturing semiconductor device using the same 审中-公开
标题翻译：用于清洁半导体衬底的半导体制造装置及使用其的制造半导体器件的方法
公开(公告)号：US20080006295A1
公开(公告)日：2008-01-10
申请号：US11542201
申请日：2006-10-04
申请人： Kunihiro Miyazaki , Hiroaki Yamada , Hiroshi Tomita , Hajime Onoda
发明人： Kunihiro Miyazaki , Hiroaki Yamada , Hiroshi Tomita , Hajime Onoda
IPC分类号： C23G1/00 , C23G1/02 , B08B3/00
CPC分类号： H01L21/31133 , G03F7/423
摘要： A processing tank stores heated sulfuric acid, and a semiconductor substrate having resist formed thereon and to be processed is immersed in the heated sulfuric acid. A first introduction unit introduces ozone gas into the sulfuric acid stored in the processing tank. A second introduction unit introduces hydrogen peroxide into the solution containing sulfuric acid and ozone at least before the processing of the semiconductor substrate is completed.
摘要翻译：处理槽储存加热的硫酸，并将其上形成有待加工的抗蚀剂的半导体衬底浸入加热的硫酸中。第一引入单元将臭氧气体引入储存在处理槽中的硫酸中。至少在半导体基板的加工完成之前，第二引入单元将含有硫酸和臭氧的溶液引入到过氧化氢中。

9. 发明申请

US20120031441A1 SUBSTRATE CLEANING APPARATUS AND SUBSTRATE CLEANING METHOD 审中-公开
标题翻译：基板清洗装置和基板清洗方法
公开(公告)号：US20120031441A1
公开(公告)日：2012-02-09
申请号：US13277251
申请日：2011-10-20
申请人： Hiroshi Tomita , Hiroaki Yamada , Kunihiro Miyazaki , Hajime Onoda
发明人： Hiroshi Tomita , Hiroaki Yamada , Kunihiro Miyazaki , Hajime Onoda
IPC分类号： B08B3/00
CPC分类号： H01L21/67057 , B08B3/08 , B08B3/10
摘要： A substrate cleaning apparatus, comprises a process tank that holds a mixture containing a hydrogen peroxide solution and sulfuric acid and is used for cleaning a substrate immersed in said mixture; circulation piping that extends between a primary side of said process tank on which said mixture is injected into said process tank and a secondary side of said process tank on which said mixture is discharged from said process tank and has a pump for causing circulation of said mixture; a heater disposed in said circulation piping configured to heat said mixture to a predetermined temperature; a chemical injection pipe configured to inject a hydrogen peroxide solution into said circulation piping at a position between the primary side of said process tank and a secondary side, which is a downstream side, of said heater; and a filter disposed in said circulation piping configured to remove particles in said mixture.
摘要翻译：一种基板清洗装置，包括保持含有过氧化氢溶液和硫酸的混合物的处理罐，用于清洗浸在所述混合物中的基板; 所述循环管道在所述处理罐的初级侧之间延伸，所述处理罐的所述混合物被注入到所述处理罐中，所述处理罐的二次侧在所述处理罐的二次侧上从所述处理罐排出所述混合物，并且具有用于使所述混合物循环的泵 ; 设置在所述循环管道中的加热器，被配置为将所述混合物加热至预定温度; 化学注入管，被配置为在所述处理罐的初级侧和位于所述加热器的下游侧的次级侧之间的位置处将过氧化氢溶液注入到所述循环管道中; 以及设置在所述循环管道中的过滤器，其构造成去除所述混合物中的颗粒。

10. 发明申请

US20070095363A1 Substrate cleaning apparatus and substrate cleaning method 失效
标题翻译：基板清洗装置和基板清洗方法
公开(公告)号：US20070095363A1
公开(公告)日：2007-05-03
申请号：US11588393
申请日：2006-10-27
申请人： Hiroshi Tomita , Hiroaki Yamada , Kunihiro Miyazaki , Hajime Onoda
发明人： Hiroshi Tomita , Hiroaki Yamada , Kunihiro Miyazaki , Hajime Onoda
IPC分类号： C23G1/00 , B08B7/04 , B08B3/00 , C03C23/00
CPC分类号： H01L21/67057 , B08B3/08 , B08B3/10
摘要： A substrate cleaning apparatus, comprises a process tank that holds a mixture containing a hydrogen peroxide solution and sulfuric acid and is used for cleaning a substrate immersed in said mixture; circulation piping that extends between a primary side of said process tank on which said mixture is injected into said process tank and a secondary side of said process tank on which said mixture is discharged from said process tank and has a pump for causing circulation of said mixture; a heater disposed in said circulation piping configured to heat said mixture to a predetermined temperature; a chemical injection pipe configured to inject a hydrogen peroxide solution into said circulation piping at a position between the primary side of said process tank and a secondary side, which is a downstream side, of said heater; and a filter disposed in said circulation piping configured to remove particles in said mixture.
摘要翻译：一种基板清洗装置，包括保持含有过氧化氢溶液和硫酸的混合物的处理罐，用于清洗浸在所述混合物中的基板; 所述循环管道在所述处理罐的初级侧之间延伸，所述处理罐的所述混合物被注入到所述处理罐中，所述处理罐的二次侧在所述处理罐的二次侧上从所述处理罐排出所述混合物，并且具有用于使所述混合物循环的泵 ; 设置在所述循环管道中的加热器，被配置为将所述混合物加热至预定温度; 化学注入管，被配置为在所述处理罐的初级侧和位于所述加热器的下游侧的次级侧之间的位置处将过氧化氢溶液注入到所述循环管道中; 以及设置在所述循环管道中的过滤器，其构造成去除所述混合物中的颗粒。

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