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1. 发明授权

US5549798A Wet processing apparatus having individual reactivating feedback paths for anode and cathode water 失效
标题翻译：湿处理设备具有用于阳极和阴极水的单独的再激活反馈路径
公开(公告)号：US5549798A
公开(公告)日：1996-08-27
申请号：US409306
申请日：1995-03-24
申请人： Hiroshi Kitajima , Hidemitsu Aoki , Haruto Hamano , Makoto Morita , Yoshimi Shiramizu , Masaharu Nakamori , Kaori Watanabe , Hirofumi Seo , Yuji Shimizu , Makoto Iuchi , Yasushi Sasaki , Nahomi Ohta
发明人： Hiroshi Kitajima , Hidemitsu Aoki , Haruto Hamano , Makoto Morita , Yoshimi Shiramizu , Masaharu Nakamori , Kaori Watanabe , Hirofumi Seo , Yuji Shimizu , Makoto Iuchi , Yasushi Sasaki , Nahomi Ohta
IPC分类号： C02F1/461 , H01L21/00 , C25F7/02 , C25B15/02 , C25B15/08
CPC分类号： H01L21/67086 , C02F1/4618 , C02F2201/46115 , C02F2201/4612 , C02F2201/4618 , C02F2201/46185 , C02F2201/4619 , C02F2209/04 , C02F2209/06 , C02F2209/42 , C02F2301/066
摘要： In a wet processing apparatus, an electrolytic cell, a first storing cell for storing anode active water of the electrolytic cell, a first processing cell for processing a target with the anode active water of the first storing cell, a second storing cell for storing cathode active water of the electrolytic cell, and a second processing cell for processing a target with the cathode active water of the second storing cell are provided. Also, a first reactivating feedback path is provided between the first processing cell and an anode region of the electrolytic cell, and a second reactivating feedback path is provided between the second processing cell and a cathode region of the electrolytic cell.
摘要翻译：在湿式处理装置中，电解槽，用于存储电解槽的阳极活性水的第一储存池，用第一储存池的阳极活性水处理目标物的第一处理池，存储阴极的第二储存池提供电解槽的活性水，以及用于利用第二存储单元的阴极活性水处理靶的第二处理槽。此外，在第一处理单元和电解槽的阳极区之间设置有第一再激活反馈路径，在第二处理单元与电解槽的阴极区之间设置第二再激活反馈路径。

2. 发明授权

US06328768B1 Semiconductor device manufacturing line 失效
标题翻译：半导体器件生产线
公开(公告)号：US06328768B1
公开(公告)日：2001-12-11
申请号：US08958157
申请日：1997-10-27
申请人： Nahomi Ohta
发明人： Nahomi Ohta
IPC分类号： H01L2100
CPC分类号： H01L21/67727 , H01L21/6704 , H01L21/67769 , Y10T29/41
摘要： In a semiconductor device manufacturing line, a wet process unit area is located at a substantial center of the manufacturing line and is provided with concentratedly arranged wet process units. A plurality of processing unit areas are located around the wet process unit area. A plurality of direct transfer mechanisms for transferring products are arranged between the wet process unit area and the respective processing unit areas, and an area transfer mechanism for transferring products is arranged among the processing unit areas.
摘要翻译：在半导体器件制造线中，湿法处理单元区域位于生产线的大致中心处，并且设置有集中布置的湿处理单元。多个处理单元区域位于湿处理单元区域周围。在湿处理单元区域和各个处理单元区域之间布置有用于传送产品的多个直接传送机构，并且在处理单元区域中布置了用于传送产品的区域传送机构。

3. 发明授权

US06322597B1 Semiconductor fabrication line with contamination preventing function 有权
标题翻译：具有防污功能的半导体制造线
公开(公告)号：US06322597B1
公开(公告)日：2001-11-27
申请号：US09281283
申请日：1999-03-30
申请人： Nahomi Ohta
发明人： Nahomi Ohta
IPC分类号： H01L2100
CPC分类号： H01L21/67727 , H01L21/67253 , H01L21/67276 , Y10T29/41
摘要： A semiconductor fabrication line for fabricating a semiconductor device, which has: a mainstream line for conducting a semiconductor fabrication process to fabricate the semiconductor device; and an isolation line disposed separated from the mainstream line in the semiconductor fabrication line. The isolation line is provided for, of the semiconductor fabrication process, a contamination-including semiconductor fabrication process that a contamination causing material which may cause a contamination of the mainstream line appears on the surface of a wafer, and after processing the contamination causing material to be eliminated from the surface of the wafer in the isolation line, the wafer is returned from the isolation line to the mainstream line.
摘要翻译：一种用于制造半导体器件的半导体制造线，其具有：用于进行半导体制造工艺以制造半导体器件的主流线; 以及在半导体制造线中与主流线分离设置的隔离线。为半导体制造工艺提供隔离线，包括含污染的半导体制造工艺，可能导致主流线污染的污染造成材料出现在晶片的表面上，并且在将污染引起的材料加工成从隔离线中的晶片的表面消除，晶片从隔离线返回到主流线。

4. 发明授权

US06336463B1 Cleaning/drying station and production line for semiconductor devices 有权
标题翻译：清洗/干燥站和半导体设备生产线
公开(公告)号：US06336463B1
公开(公告)日：2002-01-08
申请号：US09280702
申请日：1999-03-30
申请人： Nahomi Ohta
发明人： Nahomi Ohta
IPC分类号： B08B304
CPC分类号： H01L21/67028 , Y10S134/902
摘要： A production line includes a centralized cleaning/drying station for cleaning a wafer by using an HF cleaning solution or a non-HF cleaning solution and subsequently drying the wafer based on the desired cleaning/drying conditions, and a transport system for transporting the wafer between each processing station and the centralized cleaning/drying station. The production line has a large flexibility for selecting the cleaning/drying conditions for the wafer with a reduced system size.
摘要翻译：生产线包括用于通过使用HF清洗溶液或非HF清洗溶液清洗晶片的集中式清洁/干燥站，随后基于期望的清洁/干燥条件干燥晶片，以及用于在晶片间传送晶片的传送系统每个加工站和集中清洁/干燥站。该生产线具有很大的灵活性，用于选择具有减小的系统尺寸的晶片的清洁/干燥条件。

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