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1. 发明申请

US20160363504A1 RADIOACTIVE GAS MEASUREMENT APPARATUS AND FAILED FUEL INSPECTION APPARATUS 有权
标题翻译：放射性气体测量装置和失败的燃料检查装置
公开(公告)号：US20160363504A1
公开(公告)日：2016-12-15
申请号：US12886616
申请日：2010-09-21
申请人： Hiroshi KITAGUCHI , Takahiro Tadokoro , Katsunori Ueno , Hitoshi Kuwabara
发明人： Hiroshi KITAGUCHI , Takahiro Tadokoro , Katsunori Ueno , Hitoshi Kuwabara
IPC分类号： G01M3/20 , G01N33/00 , G01N23/22
CPC分类号： G01M3/20 , G01N23/22 , G01N33/0027 , G01N33/0055 , G01T1/18 , G01T1/185 , G01T1/2935 , H01J47/02 , H01J47/06
摘要： A radioactive gas measurement apparatus comprises: a radiation measurement cell comprising an inlet pipe and a discharge pipe, the radiation measurement cell introducing and discharging a radioactive gas containing a nuclide to be measured and a positron emitter nuclide through the inlet pipe and the discharge pipe; a radiation detector for measuring a radiation generated from the radioactive gas; and a radiation collimator allowing the radiation measurement cell to communicate with the radiation detector and setting a predetermined radiation measurement geometry condition between the radiation measurement cell and the radiation detector. Then, as the predetermined radiation measurement geometry condition, an inner wall area of the radiation measurement cell which the radiation detector views through the radiation collimator is set equal to or less than a half of a total inner wall area of the radiation measurement cell.
摘要翻译：一种放射性气体测量装置，包括：放射线测量单元，包括入口管和排出管，所述辐射测量单元通过所述入口管和所述排放管引入并排出包含要测量的核素和正电子发射体核素的放射性气体; 用于测量由放射性气体产生的辐射的辐射检测器; 以及辐射准直器，其允许辐射测量单元与辐射检测器通信并且在辐射测量单元和辐射检测器之间设置预定的辐射测量几何状态。然后，作为预定的辐射测量几何状态，放射线检测器通过辐射准直仪观察的辐射测量单元的内壁面积被设定为等于或小于辐射测量单元的总内壁面积的一半。

2. 发明授权

US09519067B1 Radioactive gas measurement apparatus and failed fuel inspection apparatus 有权
标题翻译：放射性气体测量装置和失效的燃料检查装置
公开(公告)号：US09519067B1
公开(公告)日：2016-12-13
申请号：US12886616
申请日：2010-09-21
申请人： Hiroshi Kitaguchi , Takahiro Tadokoro , Katsunori Ueno , Hitoshi Kuwabara
发明人： Hiroshi Kitaguchi , Takahiro Tadokoro , Katsunori Ueno , Hitoshi Kuwabara
IPC分类号： G01T1/18 , G01T1/185 , G01T1/29 , H01J47/06 , H01J47/02
CPC分类号： G01M3/20 , G01N23/22 , G01N33/0027 , G01N33/0055 , G01T1/18 , G01T1/185 , G01T1/2935 , H01J47/02 , H01J47/06
摘要： A radioactive gas measurement apparatus comprises: a radiation measurement cell comprising an inlet pipe and a discharge pipe, the radiation measurement cell introducing and discharging a radioactive gas containing a nuclide to be measured and a positron emitter nuclide through the inlet pipe and the discharge pipe; a radiation detector for measuring a radiation generated from the radioactive gas; and a radiation collimator allowing the radiation measurement cell to communicate with the radiation detector and setting a predetermined radiation measurement geometry condition between the radiation measurement cell and the radiation detector. Then, as the predetermined radiation measurement geometry condition, an inner wall area of the radiation measurement cell which the radiation detector views through the radiation collimator is set equal to or less than a half of a total inner wall area of the radiation measurement cell.
摘要翻译：一种放射性气体测量装置，包括：放射线测量单元，包括入口管和排出管，所述辐射测量单元通过所述入口管和所述排放管引入并排出包含要测量的核素和正电子发射体核素的放射性气体; 用于测量由放射性气体产生的辐射的辐射检测器; 以及辐射准直器，其允许辐射测量单元与辐射检测器通信并且在辐射测量单元和辐射检测器之间设置预定的辐射测量几何状态。然后，作为预定的辐射测量几何状态，放射线检测器通过辐射准直仪观察的辐射测量单元的内壁面积被设定为等于或小于辐射测量单元的总内壁面积的一半。

3. 发明申请

US20120104261A1 FUEL ASSEMBLY RADIATION MEASURING APPARATUS AND METHOD OF MEASURING RADIATION OF FUEL ASSEMBLY 审中-公开
标题翻译：燃油组件辐射测量装置和燃料装配辐射测量方法
公开(公告)号：US20120104261A1
公开(公告)日：2012-05-03
申请号：US13280372
申请日：2011-10-25
申请人： Hiroshi Kitaguchi , Takahiro Tadokoro , Katsunori Ueno , Yutaka Iwata , Ryusuke Kimura
发明人： Hiroshi Kitaguchi , Takahiro Tadokoro , Katsunori Ueno , Yutaka Iwata , Ryusuke Kimura
IPC分类号： G01T1/208
CPC分类号： G21C17/063
摘要： A fuel assembly radiation measuring apparatus has a radiation signal generation apparatus including a LaBr3(Ce) scintillator, an A/D converter, a signal processing apparatus, and a data analysis apparatus. The signal processing apparatus has a FPGA and a CPU. γ rays emitted from a fuel assembly disposed in water in a fuel pool enter into the LaBr3(Ce) scintillator that emits scintillator light, then a photomultiplier tube converts the light into an electric signal as a radiation detection signal. A pulse height analyzer of the FPGA inputs a radiation detection signal having a digital waveform generated by the A/D converter and changes the digital waveform into a trapezoid waveform to obtain a maximum peak value. The data analysis apparatus quantifies a target nuclide using a plurality of inputted maximum peak values to obtain burnup.
摘要翻译：燃料组件辐射测量装置具有包括LaBr 3（Ce）闪烁体，A / D转换器，信号处理装置和数据分析装置的辐射信号发生装置。信号处理装置具有FPGA和CPU。从设置在燃料池中的水中的燃料组件发射的γ射线进入发射闪烁体光的LaBr3（Ce）闪烁体，然后光电倍增管将光转换为电信号作为辐射检测信号。 FPGA的脉冲高度分析器输入具有由A / D转换器生成的数字波形的放射线检测信号，并将数字波形改变成梯形波形以获得最大峰值。数据分析装置使用多个输入的最大峰值来量化目标核素以获得燃尽。

4. 发明申请

US20120134459A1 GAMMA SCANNING APPARATUS 有权
标题翻译： GAMMA扫描仪
公开(公告)号：US20120134459A1
公开(公告)日：2012-05-31
申请号：US13304775
申请日：2011-11-28
申请人： Takahiro TADOKORO , Hiroshi Kitaguchi , Katsunori Ueno , Yutaka Iwata , Ryusuke Kimura
发明人： Takahiro TADOKORO , Hiroshi Kitaguchi , Katsunori Ueno , Yutaka Iwata , Ryusuke Kimura
IPC分类号： G21C17/06
CPC分类号： G21C17/063
摘要： A gamma scanning apparatus includes a moving and fixing mechanism which moves/fixes a housing to a definite position, and a rotating and moving mechanism which moves a fuel assembly vertically in addition to rotating the assembly. A gamma-ray counting circuit measures an output of a gamma-ray detector, and a data collecting/analyzing and controlling apparatus analyzes data output from the gamma-ray counting circuit, in association with data relating to the rotation and movement of the fuel assembly by the rotating and moving mechanism. The rotating and moving mechanism, after fixing the vertical position of the fuel assembly with the housing also fixed, rotates the fuel assembly through 360° with its height kept constant, and during the 360° rotation of the fuel assembly, the gamma-ray counting circuit measures either a time average of count values of the detector during the rotation or an integral value within a fixed time.
摘要翻译：伽马扫描装置包括将壳体移动/固定到确定位置的移动和固定机构，以及除了旋转组件之外还使燃料组件垂直移动的旋转和移动机构。伽马射线计数电路测量伽马射线检测器的输出，并且数据收集/分析和控制装置分析与伽马射线计数电路输出的数据相关联的数据，该数据与燃料组件的旋转和运动有关通过旋转和移动机构。旋转和移动机构在固定燃料组件与壳体的垂直位置也固定之后，使燃料组件旋转360度，其高度保持恒定，并且在燃料组件360度旋转期间，伽马射线计数电路测量旋转期间检测器的计数值的时间平均值或固定时间内的积分值。

5. 发明授权

US08842797B2 Gamma scanning apparatus 有权
标题翻译：伽马扫描仪
公开(公告)号：US08842797B2
公开(公告)日：2014-09-23
申请号：US13304775
申请日：2011-11-28
申请人： Takahiro Tadokoro , Hiroshi Kitaguchi , Katsunori Ueno , Yutaka Iwata , Ryusuke Kimura
发明人： Takahiro Tadokoro , Hiroshi Kitaguchi , Katsunori Ueno , Yutaka Iwata , Ryusuke Kimura
IPC分类号： G21C17/00 , G21C17/06
CPC分类号： G21C17/063
摘要： A gamma scanning apparatus includes a moving and fixing mechanism which moves/fixes a housing to a definite position, and a rotating and moving mechanism which moves a fuel assembly vertically in addition to rotating the assembly. A gamma-ray counting circuit measures an output of a gamma-ray detector, and a data collecting/analyzing and controlling apparatus analyzes data output from the gamma-ray counting circuit, in association with data relating to the rotation and movement of the fuel assembly by the rotating and moving mechanism. The rotating and moving mechanism, after fixing the vertical position of the fuel assembly with the housing also fixed, rotates the fuel assembly through 360° with its height kept constant, and during the 360° rotation of the fuel assembly, the gamma-ray counting circuit measures either a time average of count values of the detector during the rotation or an integral value within a fixed time.
摘要翻译：伽马扫描装置包括将壳体移动/固定到确定位置的移动和固定机构，以及除了旋转组件之外还使燃料组件垂直移动的旋转和移动机构。伽马射线计数电路测量伽马射线检测器的输出，并且数据收集/分析和控制装置分析与伽马射线计数电路输出的数据相关联的数据，该数据与燃料组件的旋转和运动有关通过旋转和移动机构。旋转和移动机构在固定燃料组件与壳体的垂直位置也固定之后，使燃料组件旋转360度，其高度保持恒定，并且在燃料组件360度旋转期间，伽马射线计数电路测量旋转期间检测器的计数值的时间平均值或固定时间内的积分值。

6. 发明授权

US07994890B2 Insulating transformer and power conversion device 有权
标题翻译：绝缘变压器和电力转换装置
公开(公告)号：US07994890B2
公开(公告)日：2011-08-09
申请号：US12219713
申请日：2008-07-28
申请人： Masaharu Edo , Katsunori Ueno , Hiroyuki Yoshimura
发明人： Masaharu Edo , Katsunori Ueno , Hiroyuki Yoshimura
IPC分类号： H01F5/00
CPC分类号： H03K17/18 , H01F27/2804 , H01F27/323 , H03K17/0828 , H03K17/567 , H03K17/691 , H03K2017/0806
摘要： An insulating transformer includes a semiconductor substrate, an insulating substrate, a primary winding provided on one of the semiconductor substrate and the insulating substrate, a secondary winding provided on other of the semiconductor substrate and the insulating substrate, and an insulating spacer layer provided in between the semiconductor substrate and the insulating substrate for insulating and separating the primary winding and the secondary winding. The primary winding and the secondary winding are disposed to face each other. The insulating spacer layer maintains a constant interval between the semiconductor substrate and the insulating substrate.
摘要翻译：绝缘变压器包括半导体衬底，绝缘衬底，设置在半导体衬底和绝缘衬底中的一个上的初级绕组，设置在半导体衬底和绝缘衬底的另一个上的次级绕组以及设置在其间的绝缘间隔层半导体衬底和用于绝缘和分离初级绕组和次级绕组的绝缘衬底。初级绕组和次级绕组被设置为彼此面对。绝缘间隔层在半导体衬底和绝缘衬底之间保持恒定的间隔。

7. 发明授权

US07700971B2 Insulated gate silicon carbide semiconductor device 失效
标题翻译：绝缘栅碳化硅半导体器件
公开(公告)号：US07700971B2
公开(公告)日：2010-04-20
申请号：US12015791
申请日：2008-01-17
申请人： Katsunori Ueno
发明人： Katsunori Ueno
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/0878 , H01L29/1066 , H01L29/1608 , H01L29/66068 , H01L29/7722 , H01L29/7803 , H01L29/7832
摘要： An insulated gate silicon carbide semiconductor device is provided having small on-resistance. The device combines a static induction transistor structure with an insulated gate field effect transistor structure. The advantages of both the SIT structure and the insulated gate field effect transistor structure are obtained. The structures are formed on the same SiC semiconductor substrate, with the MOSFET structure above the SIT structure. The SIT structure includes a p+ gate region in an n-type drift layer on an n+ SiC semiconductor substrate, and an n+ first source region on the surface of the drift layer. The MOSFET structure includes a p-well region on the surface of the first source region, a second source region formed in the p-well region, and a MOS gate structure formed in a trench extending from the second source region to the first source region. The p+ gate region and a source electrode are conductively connected.
摘要翻译：提供具有小的导通电阻的绝缘栅极碳化硅半导体器件。该器件将静电感应晶体管结构与绝缘栅场效应晶体管结构相结合。获得了SIT结构和绝缘栅场效应晶体管结构两者的优点。该结构形成在同一SiC半导体衬底上，MOSFET结构高于SIT结构。 SIT结构包括在n + SiC半导体衬底上的n型漂移层中的p +栅极区域和漂移层表面上的n +第一源极区域。 MOSFET结构包括在第一源区的表面上的p阱区，在p阱区中形成的第二源极区和形成在从第二源极区延伸到第一源极区的沟槽中的MOS栅极结构。 p +栅极区域和源极电极导电连接。

8. 发明申请

US20100059028A1 SEMICONDUCTOR DEVICE AND INTERNAL COMBUSTION ENGINE IGNITION DEVICE 有权
标题翻译：半导体装置和内燃机发动机点火装置
公开(公告)号：US20100059028A1
公开(公告)日：2010-03-11
申请号：US12539339
申请日：2009-08-11
申请人： Katsunori Ueno
发明人： Katsunori Ueno
IPC分类号： F02P3/04 , H01L29/739
CPC分类号： H01L29/0847 , F02P3/051 , F02P11/02 , H01L27/0623 , H01L27/0883 , H01L29/0696 , H01L29/7395 , H03K17/08128 , H03K17/0828
摘要： A semiconductor device includes an IGBT, a constant voltage circuit, and protection Zener diodes. The IGBT makes/breaks a low-voltage current flowing in a primary coil. The constant voltage circuit and the protection Zener diodes are provided between an external gate terminal and an external collector terminal. The constant voltage circuit supplies a constant gate voltage to the IGBT to thereby set a saturation current value of the IGBT to a predetermined limiting current value. The IGBT has the saturation current value in a limiting current value range of the semiconductor device.
摘要翻译：半导体器件包括IGBT，恒压电路和保护齐纳二极管。 IGBT会使流过初级线圈的低压电流产生/断开。恒压电路和保护齐纳二极管设置在外部栅极端子和外部集电极端子之间。恒压电路向IGBT提供恒定的栅极电压，从而将IGBT的饱和电流值设定为规定的极限电流值。 IGBT在半导体器件的限制电流值范围内具有饱和电流值。

9. 发明授权

US07042046B2 Super-junction semiconductor device and method of manufacturing the same 有权
公开(公告)号：US07042046B2
公开(公告)日：2006-05-09
申请号：US10925407
申请日：2004-08-25
申请人： Yasuhiko Onishi , Tatsuhiko Fujihira , Katsunori Ueno , Susumu Iwamoto , Takahiro Sato , Tatsuji Nagaoka
发明人： Yasuhiko Onishi , Tatsuhiko Fujihira , Katsunori Ueno , Susumu Iwamoto , Takahiro Sato , Tatsuji Nagaoka
IPC分类号： H01L29/76 , H01L23/58
CPC分类号： H01L29/7811 , H01L29/0619 , H01L29/0634 , H01L29/0696 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L29/7802 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a semiconductor device facilitating a peripheral portion thereof with a breakdown voltage higher than the breakdown voltage in the drain drift layer without employing a guard ring or field plate. A preferred embodiment includes a drain drift region with a first alternating conductivity type layer formed of n drift current path regions and p partition regions arranged alternately with each other, and a breakdown withstanding region with a second alternating conductivity type layer formed of n regions and p regions arranged alternately with each other, the breakdown withstanding region providing no current path in the ON-state of the device and being depleted in the OFF-state of the device. Since depletion layers expand in both directions from multiple pn-junctions into n regions and p regions in the OFF-state of the device, the adjacent areas of p-type base regions, the outer area of the semiconductor chip and the deep area of the semiconductor chip are depleted. Thus, the breakdown voltage of breakdown withstanding region is higher than the breakdown voltage of drain drift region.

10. 发明授权

US07029977B2 Fabrication method of semiconductor wafer 有权
标题翻译：半导体晶圆的制造方法
公开(公告)号：US07029977B2
公开(公告)日：2006-04-18
申请号：US10792884
申请日：2004-03-05
申请人： Daisuke Kishimoto , Susumu Iwamoto , Katsunori Ueno , Ryohsuke Shimizu , Satoshi Oka
发明人： Daisuke Kishimoto , Susumu Iwamoto , Katsunori Ueno , Ryohsuke Shimizu , Satoshi Oka
IPC分类号： H01L21/336 , H01L21/4763
CPC分类号： H01L29/0634 , C30B25/18 , C30B29/06 , H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/3065 , H01L29/045 , H01L29/0688
摘要： A fabrication method of a semiconductor wafer can fill trenches formed in a semiconductor substrate with an epitaxial film with high crystal quality without leaving cavities in the trenches. The trenches are formed in the first conductivity type semiconductor substrate. Planes exposed inside the trenches are made clean surfaces by placing the substrate in a gas furnace, followed by supplying the furnace with an etching gas and carrier gas, and by performing etching on the exposed planes inside the trenches by a thickness from about a few nanometers to one micrometer. The trenches have a geometry opening upward through the etching. Following the etching, a second conductivity type semiconductor is epitaxially grown in the trenches by supplying the furnace with a growth gas, etching gas, doping gas and carrier gas, thereby filling the trenches. Instead of making the trenches slightly-opened upward, their sidewalls may be made planes enabling facet formation.
摘要翻译：半导体晶片的制造方法可以用具有高晶体质量的外延膜填充在半导体衬底中形成的沟槽，而不会在沟槽中留下空洞。沟槽形成在第一导电型半导体衬底中。通过将衬底放置在气体炉中，然后向炉内供应蚀刻气体和载气，并且通过在沟槽内的暴露平面上蚀刻约几纳米的厚度，将暴露在沟槽内的平面制成干净的表面至一微米。沟槽具有通过蚀刻向上的几何形状。在蚀刻之后，通过向炉提供生长气体，蚀刻气体，掺杂气体和载气，从而在沟槽中外延生长第二导电型半导体，由此填充沟槽。不是使沟槽向上略微打开，它们的侧壁可以制成使得能够形成小平面的平面。

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