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1. 发明申请

US20060226119A1 Method for generating plasma method for cleaning and method for treating substrate 审中-公开
标题翻译：产生等离子体清洗方法的方法和处理基材的方法
公开(公告)号：US20060226119A1
公开(公告)日：2006-10-12
申请号：US10562400
申请日：2004-06-25
申请人： Hiroshi Kannan , Noboru Tamura , Kazuya Dobashi
发明人： Hiroshi Kannan , Noboru Tamura , Kazuya Dobashi
IPC分类号： B08B6/00 , C23F1/00
CPC分类号： H01J37/321 , B08B7/0035 , C23G5/00 , H01J37/32357 , H01L21/3065 , H01L21/31116
摘要： A plasma generation method in a toroidal plasma generator that includes a gas passage having a gas entrance and a gas outlet and forming a circuitous path and a coil wound around a part of the gas passage includes the steps of supplying a mixed gas of an Ar gas and an NF3 gas containing at least 5% of NF3 and igniting plasma by driving the coil with a high-frequency power, wherein the plasma ignition step is conducted under a total pressure of 6.65-66.5 Pa.
摘要翻译：环形等离子体发生器中的等离子体产生方法包括具有气体入口和气体出口并形成迂回路径的气体通道和缠绕在气体通道的一部分上的线圈的步骤包括以下步骤：将Ar气体和含有至少5％的NF 3 N的NF 3气体，并通过以高频功率驱动线圈来点燃等离子体，其中等离子体点火步骤在总压力为6.65-66.5Pa。

2. 发明申请

US20100252068A1 Plasma Generation Method, Cleaning Method, and Substrate Processing Method 有权
标题翻译：等离子体生成方法，清洗方法和基板处理方法
公开(公告)号：US20100252068A1
公开(公告)日：2010-10-07
申请号：US12752813
申请日：2010-04-01
申请人： Hiroshi KANNAN , Noboru Tamura , Kazuya Dobashi
发明人： Hiroshi KANNAN , Noboru Tamura , Kazuya Dobashi
IPC分类号： B08B9/027 , H05H1/00 , B44C1/22
CPC分类号： H01J37/321 , B08B7/0035 , C23G5/00 , H01J37/32357 , H01L21/3065 , H01L21/31116
摘要： A plasma generation method in a toroidal plasma generator that includes a gas passage having a gas entrance and a gas outlet and forming a circuitous path and a coil wound around a part of the gas passage includes the steps of supplying a mixed gas of an Ar gas and an NF3 gas containing at least 5% of NF3 and igniting plasma by driving the coil with a high-frequency power, wherein the plasma ignition step is conducted under a total pressure of 6.65-66.5 Pa.
摘要翻译：环形等离子体发生器中的等离子体产生方法包括具有气体入口和气体出口并形成迂回路径的气体通道和缠绕在气体通道的一部分上的线圈的步骤包括以下步骤：将Ar气体以及包含至少5％的NF 3的NF 3气体，并通过以高频功率驱动线圈点燃等离子体，其中等离子体点火步骤在6.65-66.5Pa的总压力下进行。

3. 发明授权

US08574448B2 Plasma generation method, cleaning method, and substrate processing method 有权
标题翻译：等离子体产生方法，清洗方法和基板处理方法
公开(公告)号：US08574448B2
公开(公告)日：2013-11-05
申请号：US12752813
申请日：2010-04-01
申请人： Hiroshi Kannan , Noboru Tamura , Kazuya Dobashi
发明人： Hiroshi Kannan , Noboru Tamura , Kazuya Dobashi
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F3/00
CPC分类号： H01J37/321 , B08B7/0035 , C23G5/00 , H01J37/32357 , H01L21/3065 , H01L21/31116
摘要： A plasma generation method in a toroidal plasma generator that includes a gas passage having a gas entrance and a gas outlet and forming a circuitous path and a coil wound around a part of the gas passage includes the steps of supplying a mixed gas of an Ar gas and an NF3 gas containing at least 5% of NF3 and igniting plasma by driving the coil with a high-frequency power, wherein the plasma ignition step is conducted under a total pressure of 6.65-66.5 Pa.
摘要翻译：环形等离子体发生器中的等离子体产生方法包括具有气体入口和气体出口并形成迂回路径的气体通道和缠绕在气体通道的一部分上的线圈的步骤包括以下步骤：将Ar气体以及包含至少5％的NF 3的NF 3气体，并通过以高频功率驱动线圈点燃等离子体，其中等离子体点火步骤在6.65-66.5Pa的总压力下进行。

4. 发明授权

US08404590B2 Plasma processing method and storage medium 有权
标题翻译：等离子体处理方法和存储介质
公开(公告)号：US08404590B2
公开(公告)日：2013-03-26
申请号：US13189715
申请日：2011-07-25
申请人： Sung Tae Lee , Kazuya Dobashi
发明人： Sung Tae Lee , Kazuya Dobashi
IPC分类号： H01L21/00
CPC分类号： H01L21/31116 , H01L22/12 , H01L22/20
摘要： There is provided a plasma processing method performing a plasma etching process on an oxide film of a target substrate through one or more steps by using a processing gas including a CF-based gas and a COS gas. The plasma processing method includes: performing a plasma etching process on the oxide film of the target substrate according to a processing recipe; measuring a concentration of sulfur (S) remaining on the target substrate (residual S concentration) after the plasma etching process is performed according to the processing recipe; adjusting a ratio of a COS gas flow rate with respect to a CF-based gas flow rate (COS/CF ratio) so as to allow the residual S concentration to become equal to or smaller than a predetermined value; and performing an actual plasma etching process according to a modified processing recipe storing the adjusted COS/CF ratio.
摘要翻译：提供了通过使用包括CF基气体和COS气体的处理气体，通过一个或多个步骤对目标基板的氧化物膜进行等离子体蚀刻处理的方法。等离子体处理方法包括：根据处理配方对目标基板的氧化物膜进行等离子体蚀刻处理; 根据加工配方进行等离子体蚀刻处理后，测定残留在目标基板上的硫（S）浓度（残留S浓度）调整COS气体流量相对于CF系气体流量比（COS / CF比）的比例，使残留S浓度变得等于或小于预定值; 并根据存储了经调整的COS / CF比的改进处理方案进行实际等离子体蚀刻处理。

5. 发明授权

US09099298B2 Substrate cleaning apparatus and substrate cleaning method 有权
标题翻译：基板清洗装置和基板清洗方法
公开(公告)号：US09099298B2
公开(公告)日：2015-08-04
申请号：US13617530
申请日：2012-09-14
申请人： Kazuya Dobashi , Takashi Fuse
发明人： Kazuya Dobashi , Takashi Fuse
IPC分类号： B08B3/02 , H01L21/02 , H01L21/67 , H01L21/311
CPC分类号： H01L21/02052 , H01L21/0206 , H01L21/31133 , H01L21/67051
摘要： A substrate cleaning device is capable of removing more diverse contaminants from substrates than ultra-low temperature aerosol ejection, while avoiding technical problems inherent to wet cleaning, such as micro-roughness, watermarks, loss of substrate material and destruction of the device structure. A substrate cleaning device for cleaning wafers to which cleaning target objects have adhered includes a cluster spraying unit which sprays the wafer with one or more types of clusters formed of cleaning preparation molecules agglomerated together, a suction unit which sucks the cleaning target objects separated by spraying the clusters of the cleaning agent molecules; and a unit for moving the wafer and the cluster spraying unit relative to the one another along the surface of the wafer W to which the cleaning target objects have adhered.
摘要翻译：衬底清洁装置能够从超低温气溶胶喷射中除去基材中更多种污染物，同时避免湿法清洁所固有的技术问题，例如微粗糙度，水印，衬底材料的损失和器件结构的破坏。用于清洁清洁对象物体所粘附的晶片的基板清洗装置包括：一个簇喷射单元，其用一个或多个聚集在一起的清洁制剂分子形成的一个或多个类型的簇喷射晶片;抽吸单元，其吸取通过喷射分离的清洁对象物体清洁剂分子的簇; 以及用于相对于彼此沿晶片W的表面移动所述晶片和所述簇喷射单元的单元，所述晶片W的附着在所述表面上。

6. 发明申请

US20120021538A1 PLASMA PROCESSING METHOD AND STORAGE MEDIUM 有权
标题翻译：等离子体处理方法和储存介质
公开(公告)号：US20120021538A1
公开(公告)日：2012-01-26
申请号：US13189715
申请日：2011-07-25
申请人： Sung Tae Lee , Kazuya Dobashi
发明人： Sung Tae Lee , Kazuya Dobashi
IPC分类号： H01L21/66
CPC分类号： H01L21/31116 , H01L22/12 , H01L22/20
摘要： There is provided a plasma processing method performing a plasma etching process on an oxide film of a target substrate through one or more steps by using a processing gas including a CF-based gas and a COS gas. The plasma processing method includes: performing a plasma etching process on the oxide film of the target substrate according to a processing recipe; measuring a concentration of sulfur (S) remaining on the target substrate (residual S concentration) after the plasma etching process is performed according to the processing recipe; adjusting a ratio of a COS gas flow rate with respect to a CF-based gas flow rate (COS/CF ratio) so as to allow the residual S concentration to become equal to or smaller than a predetermined value; and performing an actual plasma etching process according to a modified processing recipe storing the adjusted COS/CF ratio.
摘要翻译：提供了通过使用包括CF基气体和COS气体的处理气体，通过一个或多个步骤对目标基板的氧化物膜进行等离子体蚀刻处理的方法。等离子体处理方法包括：根据处理配方对目标基板的氧化物膜进行等离子体蚀刻处理; 根据加工配方进行等离子体蚀刻处理后，测定残留在目标基板上的硫（S）浓度（残留S浓度）调整COS气体流量相对于CF系气体流量比（COS / CF比）的比例，使残留S浓度变得等于或小于预定值; 并根据存储了经调整的COS / CF比的改进处理方案进行实际等离子体蚀刻处理。

7. 发明申请

US20110155177A1 METHOD AND DEVICE FOR CLEANING A SUBSTRATE AND STORAGE MEDIUM 有权
标题翻译：用于清洁基板和储存介质的方法和装置
公开(公告)号：US20110155177A1
公开(公告)日：2011-06-30
申请号：US13056504
申请日：2009-07-27
申请人： Akitake Tamura , Akinobu Kakimoto , Kazuya Dobashi
发明人： Akitake Tamura , Akinobu Kakimoto , Kazuya Dobashi
IPC分类号： B08B7/00 , H01L21/02
CPC分类号： H01L21/02063 , H01L21/02057 , H01L21/67051
摘要： In a cleaning method, a substrate having a pattern formed on the surface thereof can be cleaned by using a cleaning fluid, while preventing the pattern protrusions from being flattened when the cleaning fluid is removed or dried. The cleaning method includes the steps of: loading a substrate onto a loading platform inside a processing chamber; heating the substrate; and supplying a cleaning fluid onto the surface of the substrate. The substrate is heated in the substrate heating step so that the Leidenfrost phenomenon occurs and steam of the cleaning fluid is interposed between the substrate and droplets of the cleaning fluid supplied to the substrate in the cleaning fluid supply step.
摘要翻译：在清洁方法中，可以通过使用清洁流体清洁具有形成在其表面上的图案的基板，同时在清洁流体被去除或干燥时防止图案突起变平。清洁方法包括以下步骤：将基板装载到处理室内的装载平台上; 加热基板; 并将清洗液供给到基板的表面上。基板在基板加热步骤中被加热，从而在洗涤液供给步骤中，发生莱顿冰霜现象，清洗流体的蒸汽介于基板和供给基板的清洗流体的液滴之间。

8. 发明申请

US20090218483A1 Analyzing Method and Analyzing Apparatus 有权
标题翻译：分析方法和分析仪器
公开(公告)号：US20090218483A1
公开(公告)日：2009-09-03
申请号：US12280845
申请日：2007-06-21
申请人： Kazuya Dobashi , Shigeru Kawamura , Kohei Tsugita , Teruyuki Hayashi
发明人： Kazuya Dobashi , Shigeru Kawamura , Kohei Tsugita , Teruyuki Hayashi
IPC分类号： B01D59/44 , H01J49/00 , A61N5/00
CPC分类号： H01L21/67207 , G01N21/3103 , G01N21/68 , H01J49/0463
摘要： An analysis apparatus includes a first process part for removing a film formed on a substrate by irradiating the film with ultraviolet light, a second process part for providing a solution onto a surface of the substrate for dissolving an object being analyzed on the substrate, and a third process part for analyzing the object being analyzed in the solution that is used in the second step.
摘要翻译：分析装置包括：第一处理部，用于通过用紫外光照射膜去除在基板上形成的膜;第二处理部，用于在基板的表面上提供溶液，用于将待分析的物体溶解在基板上;以及用于分析在第二步骤中使用的解决方案中被分析的对象的第三处理部分。

9. 发明授权

US07383841B2 Method of cleaning substrate-processing device and substrate-processing device 失效
标题翻译：清洗基板处理装置和基板处理装置的方法
公开(公告)号：US07383841B2
公开(公告)日：2008-06-10
申请号：US10519401
申请日：2003-07-01
申请人： Hiroshi Shinriki , Kazuya Dobashi , Mikio Suzuki , Takashi Magara
发明人： Hiroshi Shinriki , Kazuya Dobashi , Mikio Suzuki , Takashi Magara
IPC分类号： B08B3/00 , B08B9/00
CPC分类号： C23C16/4405
摘要： In a cleaning step of a substrate-processing device, vacuum drawing is made for the space between an inner chamber and an outer chamber that receives the inner chamber. Temperature of the inner chamber is set higher than the temperature of the inner chamber during substrate processing and set lower than the temperature of a substrate support member. After that, a cleaning gas containing hexafluoroacetylaceton (Hhfac) is supplied in the inner chamber, and substances to be cleaned off adhering inside the inner chamber are removed.
摘要翻译：在基板处理装置的清洁步骤中，对内室和接收内室的外室之间的空间进行真空抽吸。内部室的温度被设定为高于衬底处理期间内部室的温度并且设定为低于衬底支撑构件的温度。之后，在内室供给含有六氟乙酰丙酮（Hhfac）的清洗气体，除去附着在内室内的要清洗的物质。

10. 发明申请

US20140227882A1 CLEANING METHOD, PROCESSING APPARATUS, AND STORAGE MEDIUM 有权
标题翻译：清洁方法，加工设备和储存介质
公开(公告)号：US20140227882A1
公开(公告)日：2014-08-14
申请号：US14232989
申请日：2012-07-12
申请人： Kensuke Inai , Kazuya Dobashi
发明人： Kensuke Inai , Kazuya Dobashi
IPC分类号： H01L21/02 , H01L21/67
CPC分类号： H01L21/02057 , H01L21/02046 , H01L21/02068 , H01L21/3086 , H01L21/67028 , H01L21/67051 , H01L21/67069 , H01L21/67115
摘要： Deposits such as particles deposited on a surface of a target object can be easily removed while suppressing damage to the target object such as destruction of pattern formed on the surface of the target object or film roughness on the surface of the target object. In a pre-treatment, vapor of a hydrogen fluoride is supplied to a wafer W to dissolve a natural oxide film 11, so that a deposit 10 attached to a surface of the natural oxide film 11 is slightly separated from a surface of the wafer W. A carbon dioxide gas that does not react with an underlying film 12 is supplied to a processing gas atmosphere where the wafer W is placed, so that a gas cluster of the carbon dioxide gas is generated. Then, the gas cluster in a non-ionized state is irradiated toward the wafer W to remove the deposit 10.
摘要翻译：可以容易地去除沉积在目标物体表面上的沉积物，同时抑制目标物体的损伤，例如在目标物体的表面上形成的图案的破坏或目标物体的表面上的膜粗糙度。在预处理中，将氟化氢的蒸气供给到晶片W以溶解天然氧化膜11，使得附着在自然氧化膜11的表面上的沉积物10与晶片W的表面稍微分离将不与下面的膜12反应的二氧化碳气体供给到放置晶片W的处理气体气氛中，从而产生二氧化碳气体的气体簇。然后，将非离子化状态的气体簇朝向晶片W照射以除去沉积物10。

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