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1. 发明申请

US20110155177A1 METHOD AND DEVICE FOR CLEANING A SUBSTRATE AND STORAGE MEDIUM 有权
标题翻译：用于清洁基板和储存介质的方法和装置
公开(公告)号：US20110155177A1
公开(公告)日：2011-06-30
申请号：US13056504
申请日：2009-07-27
申请人： Akitake Tamura , Akinobu Kakimoto , Kazuya Dobashi
发明人： Akitake Tamura , Akinobu Kakimoto , Kazuya Dobashi
IPC分类号： B08B7/00 , H01L21/02
CPC分类号： H01L21/02063 , H01L21/02057 , H01L21/67051
摘要： In a cleaning method, a substrate having a pattern formed on the surface thereof can be cleaned by using a cleaning fluid, while preventing the pattern protrusions from being flattened when the cleaning fluid is removed or dried. The cleaning method includes the steps of: loading a substrate onto a loading platform inside a processing chamber; heating the substrate; and supplying a cleaning fluid onto the surface of the substrate. The substrate is heated in the substrate heating step so that the Leidenfrost phenomenon occurs and steam of the cleaning fluid is interposed between the substrate and droplets of the cleaning fluid supplied to the substrate in the cleaning fluid supply step.
摘要翻译：在清洁方法中，可以通过使用清洁流体清洁具有形成在其表面上的图案的基板，同时在清洁流体被去除或干燥时防止图案突起变平。清洁方法包括以下步骤：将基板装载到处理室内的装载平台上; 加热基板; 并将清洗液供给到基板的表面上。基板在基板加热步骤中被加热，从而在洗涤液供给步骤中，发生莱顿冰霜现象，清洗流体的蒸汽介于基板和供给基板的清洗流体的液滴之间。

2. 发明授权

US08673086B2 Method and device for cleaning a substrate and storage medium 有权
标题翻译：清洗基材和储存介质的方法和装置
公开(公告)号：US08673086B2
公开(公告)日：2014-03-18
申请号：US13056504
申请日：2009-07-27
申请人： Akitake Tamura , Akinobu Kakimoto , Kazuya Dobashi
发明人： Akitake Tamura , Akinobu Kakimoto , Kazuya Dobashi
IPC分类号： B08B7/00
CPC分类号： H01L21/02063 , H01L21/02057 , H01L21/67051
摘要： In a cleaning method, a substrate having a pattern formed on the surface thereof can be cleaned by using a cleaning fluid, while preventing the pattern protrusions from being flattened when the cleaning fluid is removed or dried. The cleaning method includes the steps of: loading a substrate onto a loading platform inside a processing chamber; heating the substrate; and supplying a cleaning fluid onto the surface of the substrate. The substrate is heated in the substrate heating step so that the Leidenfrost phenomenon occurs and steam of the cleaning fluid is interposed between the substrate and droplets of the cleaning fluid supplied to the substrate in the cleaning fluid supply step.
摘要翻译：在清洁方法中，可以通过使用清洁流体清洁具有形成在其表面上的图案的基板，同时在清洁流体被去除或干燥时防止图案突起变平。清洁方法包括以下步骤：将基板装载到处理室内的装载平台上; 加热基板; 并将清洗液供给到基板的表面上。基板在基板加热步骤中被加热，从而在洗涤液供给步骤中，发生莱顿冰霜现象，清洗流体的蒸汽介于基板和供给基板的清洗流体的液滴之间。

3. 发明申请

US20090194233A1 Component for semicondutor processing apparatus and manufacturing method thereof 审中-公开
标题翻译：半导体加工装置用部件及其制造方法
公开(公告)号：US20090194233A1
公开(公告)日：2009-08-06
申请号：US11663182
申请日：2006-06-23
申请人： Akitake Tamura , Kazuya Dobashi , Teruyuki Hayashi
发明人： Akitake Tamura , Kazuya Dobashi , Teruyuki Hayashi
IPC分类号： C23C16/455 , B32B15/04 , C23C16/40 , C23C16/44 , B05D1/36 , H01L21/205 , H01L21/306
CPC分类号： C23C16/4404 , C23C16/403 , C23C16/405 , C23C16/4412 , C23C16/45525 , C23C16/45561 , Y10T428/265
摘要： A component (10) for a semiconductor processing apparatus includes a matrix (10a) defining a shape of the component, and a protection film (10c) covering a predetermined surface of the matrix. The protection film (10c) consists essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium. The protection film (10c) has a porosity of less than 1% and a thickness of 1 nm to 10 μm.
摘要翻译：用于半导体处理装置的部件（10）包括限定部件形状的矩阵（10a）和覆盖矩阵的预定表面的保护膜（10c）。保护膜（10c）基本上由选自铝，硅，铪，锆和钇的第一元素的无定形氧化物组成。保护膜（10c）的孔隙率小于1％，厚度为1nm〜10μm。

4. 发明申请

US20110244693A1 COMPONENT FOR SEMICONDUCTOR PROCESSING APPARATUS AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体加工设备的组件及其制造方法
公开(公告)号：US20110244693A1
公开(公告)日：2011-10-06
申请号：US13163305
申请日：2011-06-17
申请人： Akitake Tamura , Kazuya Dobashi , Teruyuki Hayashi
发明人： Akitake Tamura , Kazuya Dobashi , Teruyuki Hayashi
IPC分类号： H01L21/31 , C23C4/04 , C23C16/06
CPC分类号： C23C16/4404 , C23C16/403 , C23C16/405 , C23C16/4412 , C23C16/45525 , C23C16/45561 , Y10T428/265
摘要： A component for a semiconductor processing apparatus includes a matrix defining a shape of the component, and a protection film covering a predetermined surface of the matrix. The protection film consists essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium. The protection film has a porosity of less than 1% and a thickness of 1 nm to 10 μm.
摘要翻译：半导体处理装置的部件包括限定部件的形状的矩阵和覆盖矩阵的预定表面的保护膜。保护膜基本上由选自铝，硅，铪，锆和钇的第一元素的无定形氧化物组成。保护膜的孔隙率小于1％，厚度为1nm至10μm。

5. 发明申请

US20090183476A1 GAS PURIFYING APPARATUS AND SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开
标题翻译：气体净化装置和半导体制造装置
公开(公告)号：US20090183476A1
公开(公告)日：2009-07-23
申请号：US12296305
申请日：2007-04-02
申请人： Kazuya Dobashi , Teruyuki Hayashi , Akitake Tamura
发明人： Kazuya Dobashi , Teruyuki Hayashi , Akitake Tamura
IPC分类号： B01D50/00
CPC分类号： B01D46/521 , B01D46/0023
摘要： A gas purifying apparatus for removing particles from a gas. The gas purifying apparatus includes a first filter layer and a second filter layer, and the diameter of a fiber forming the first filter layer is larger than that of a fiber forming the second filter layer. A semiconductor manufacturing apparatus can use such a gas purifying apparatus.
摘要翻译：一种用于从气体中除去颗粒的气体净化装置。气体净化装置包括第一过滤层和第二过滤层，形成第一过滤层的纤维的直径大于形成第二过滤层的纤维的直径。半导体制造装置可以使用这种气体净化装置。

6. 发明申请

US20100154712A1 SOURCE GAS GENERATING DEVICE AND FILM FORMING APPARATUS 审中-公开
标题翻译：源气体生成装置和成膜装置
公开(公告)号：US20100154712A1
公开(公告)日：2010-06-24
申请号：US12639410
申请日：2009-12-16
申请人： Akitake Tamura , Teruyuki Hayashi
发明人： Akitake Tamura , Teruyuki Hayashi
IPC分类号： C23C16/00
CPC分类号： C23C14/243 , C23C14/246
摘要： A source gas generating device includes a liquid accommodation unit that accommodates therein the liquid source obtained by liquefying the solid source; a first energy feed unit that supplies energy to raise a temperature of a first region within the liquid accommodation unit to a melting point of the solid source; a second energy feed unit that supplies energy to raise a temperature of a second region within the liquid accommodation unit to a temperature higher than the temperature of the first region, the second region being distanced apart from the first region via a liquid flowing region; a solid source feed unit that supplies the solid source into the first region of the liquid accommodation unit; and an outlet port that discharges the source gas produced by the evaporation of the liquid source within the second region of the liquid accommodation unit.
摘要翻译：源气体发生装置包括：液体容纳单元，其容纳通过液化固体源获得的液体源; 第一能量供给单元，其提供能量以将所述液体容纳单元内的第一区域的温度升高到所述固体源的熔点; 第二能量馈送单元，其提供能量以将所述液体容纳单元内的第二区域的温度升高到比所述第一区域的温度高的温度，所述第二区域经由液体流动区域与所述第一区域分开; 固体源进料单元，其将固体源供应到液体容纳单元的第一区域; 以及排出由液体容纳单元的第二区域内的液体源的蒸发而产生的源气体的排出口。

7. 发明申请

US20090104760A1 VERTICAL CVD APPPARATUS FOR FORMING SILICON-GERMANIUM FILM 失效
标题翻译：用于形成硅 - 锗膜的垂直CVD涂层
公开(公告)号：US20090104760A1
公开(公告)日：2009-04-23
申请号：US12341642
申请日：2008-12-22
申请人： Masaki KUROKAWA , Katsuhiko Komori , Norifumi Kimura , Kazuhide Hasebe , Takehiko Fujita , Akitake Tamura , Yoshikazu Furusawa
发明人： Masaki KUROKAWA , Katsuhiko Komori , Norifumi Kimura , Kazuhide Hasebe , Takehiko Fujita , Akitake Tamura , Yoshikazu Furusawa
IPC分类号： H01L21/205
CPC分类号： C23C16/22 , C23C16/45578
摘要： A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.
摘要翻译：布置垂直CVD装置以一起处理多个目标基板以形成硅锗膜。该装置包括反应容器，其具有被配置为容纳目标基板的过程区域，以及配置成将混合气体供应到过程区域中的公共供应系统。混合气体包括硅烷族的第一工艺气体和锗族的第二工艺气体。共同供应系统包括设置在不同高度的多个供应口。

8. 发明申请

US20120255193A1 SUBSTRATE DRYING APPARATUS AND METHOD 审中-公开
标题翻译：基板干燥装置和方法
公开(公告)号：US20120255193A1
公开(公告)日：2012-10-11
申请号：US13518631
申请日：2010-12-07
申请人： Akitake Tamura
发明人： Akitake Tamura
IPC分类号： F26B25/00
CPC分类号： H01L21/67034 , F26B5/00 , H01L21/02052
摘要： A substrate drying apparatus which dries a substrate cleaned by a diamagnetic liquid includes a magnet unit for moving the liquid adhering to the substrate by means of a magnetic force; and a magnet transfer mechanism for moving the magnet unit along the substrate toward an edge of the substrate. A substrate drying method of drying a substrate cleaned by a diamagnetic liquid includes bringing a magnet unit close to the substrate, the magnet unit being configured to move the liquid adhering to the substrate by means of a magnetic force; and moving the magnet unit along the substrate toward the edge of the substrate.
摘要翻译：干燥由抗磁性液体清洗的基板的基板干燥装置包括用于通过磁力移动粘附到基板上的液体的磁体单元; 以及用于沿着基板朝向基板的边缘移动磁体单元的磁体传送机构。干燥由抗磁性液体清洗的基板的基板干燥方法包括使磁体单元靠近基板，所述磁体单元构造成通过磁力移动附着在基板上的液体; 并且沿着衬底朝向衬底的边缘移动磁体单元。

9. 发明申请

US20120094014A1 VAPOR DEPOSITION APPARATUS AND VAPOR DEPOSITION METHOD 审中-公开
标题翻译：蒸气沉积装置和蒸气沉积方法
公开(公告)号：US20120094014A1
公开(公告)日：2012-04-19
申请号：US13265678
申请日：2010-04-21
申请人： Yuji Ono , Tomohiko Edura , Teruyuki Hayashi , Akitake Tamura , Misako Saito , Hirotaka Kuwada , Shimon Otsuki
发明人： Yuji Ono , Tomohiko Edura , Teruyuki Hayashi , Akitake Tamura , Misako Saito , Hirotaka Kuwada , Shimon Otsuki
IPC分类号： B05D5/06 , B67D7/06 , C23C16/448
CPC分类号： C23C14/12 , C23C14/228 , C23C14/246
摘要： There is provided a vapor deposition apparatus and a vapor deposition method capable of efficiently sublimating/melting a granular organic material with high mobility. The vapor deposition apparatus for forming a thin film on a substrate by vapor deposition includes a depressurizable material supply apparatus configured to supply a material gas, and a film forming apparatus configured to form a thin film on the substrate. The material supply apparatus includes a quantity control unit configured to control a quantity of a material, and a material gas generating unit configured to vaporize the material supplied from the quantity control unit.
摘要翻译：提供了能够高度迁移率地有效地升华/熔化颗粒状有机材料的气相沉积设备和气相沉积方法。用于通过气相沉积在基板上形成薄膜的气相沉积装置包括构造成供给材料气体的可降压材料供给装置和被配置为在基板上形成薄膜的成膜装置。材料供给装置包括：配置为控制材料量的量控制单元和构造成使从量控制单元供给的材料蒸发的原料气体生成单元。

10. 发明申请

US20060137709A1 Film formation apparatus and method of using the same 有权
公开(公告)号：US20060137709A1
公开(公告)日：2006-06-29
申请号：US11312760
申请日：2005-12-21
申请人： Akitake Tamura , Shigeru Nakajima , Tetsushi Ozaki
发明人： Akitake Tamura , Shigeru Nakajima , Tetsushi Ozaki
IPC分类号： B08B3/12 , C23C16/00 , H01L21/306
CPC分类号： C23C16/4405 , B08B7/0035 , C23C16/401 , H01L21/31641 , H01L21/31645 , Y10S438/905
摘要： A method of using a film formation apparatus for a semiconductor process includes processing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is arranged to supply the cleaning gas into the reaction chamber, and set an interior of the reaction chamber at a first temperature and a first pressure. The by-product film mainly contains a high-dielectric-constant material. The cleaning gas contains chlorine without containing fluorine. The first temperature and the first pressure are set to activate chlorine in the cleaning gas.

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