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    • 3. 发明申请
    • THIN-FILM SEMICONDUCTOR DEVICE FOR DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF
    • 用于显示装置的薄膜半导体器件及其制造方法
    • US20110278583A1
    • 2011-11-17
    • US13115409
    • 2011-05-25
    • Hiroshi HAYASHITakahiro KAWASHIMAGenshiro KAWACHI
    • Hiroshi HAYASHITakahiro KAWASHIMAGenshiro KAWACHI
    • H01L29/786H01L21/336
    • H01L29/78696H01L29/04H01L29/66765
    • A thin-film semiconductor device includes, in order, a substrate, a gate electrode, a gate insulating film, a first channel layer, and a second channel layer. The second channel layer includes a protrusion between first top surface end portions. The protrusion has first lateral surfaces that each extend between one of the first top surface end portions and a top surface of the protrusion. An insulation layer is on the top surface of the protrusion. The insulation layer has second lateral surfaces that each extend to one of second top surface end portions of the insulation layer. Two contact layers are each on one of the second top surface end portions of the insulation layer, adjacent one of the second lateral surfaces of the insulation layer, adjacent one of the first lateral surfaces of the protrusion, and on one of the first top surface end portions of the second channel layer. A source electrode is on one of the two contact layers, and a drain electrode is on the other of the two contact layers. The two contact layers and the upper portion of the protrusion of said second channel layer are of opposite conductivity types.
    • 薄膜半导体器件依次包括衬底,栅电极,栅极绝缘膜,第一沟道层和第二沟道层。 第二通道层包括在第一顶表面端部之间的突起。 突起具有第一侧表面,每个侧表面在第一顶表面端部之一和突起的顶表面之间延伸。 绝缘层位于突起的顶表面上。 绝缘层具有第二侧表面,每个侧表面延伸到绝缘层的第二顶表面端部中的一个。 两个接触层分别位于绝缘层的第二顶表面端部中的一个上,邻近绝缘层的第二侧表面之一,邻近凸起的第一侧表面之一,并且在第一顶表面 第二通道层的端部。 源电极位于两个接触层之一上,漏电极位于两个接触层中的另一个上。 所述第二通道层的两个接触层和突起的上部具有相反的导电类型。
    • 4. 发明申请
    • POWER SUPPLY APPARATUS
    • 电源设备
    • US20120294046A1
    • 2012-11-22
    • US13475138
    • 2012-05-18
    • Satoru NATEHiroshi HAYASHI
    • Satoru NATEHiroshi HAYASHI
    • H02M3/335
    • H02M1/42H02J9/005H02M1/4225H02M3/33507H02M3/33569H02M2001/0032H02M2001/007Y02B70/126Y02B70/16
    • A second control circuit is configured to switch a pulse signal to a level which turns off a second switching transistor when a coil current that flows through a primary winding reaches a predetermined threshold current. The second control circuit is configured to start a switching operation when a power supply for an electronic device is turned on, to set the threshold current to a first value when an intermediate voltage is higher than a predetermined level, and to set the threshold current to a second value that is lower than the first value when the intermediate voltage is lower than a predetermined level. A first control circuit is configured to start a switching operation upon receiving an instruction from a microcontroller to start operating.
    • 第二控制电路被配置为当流过初级绕组的线圈电流达到预定阈值电流时,将脉冲信号切换到关闭第二开关晶体管的电平。 第二控制电路被配置为当电子设备的电源接通时开始切换操作,当中间电压高于预定电平时将阈值电流设置为第一值,并将阈值电流设置为 当所述中间电压低于预定电平时,所述第二值低于所述第一值。 第一控制电路被配置为在从微控制器接收到开始操作的指令时开始切换操作。